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1. 发明授权

US5635868A Power transistor current limiter 失效
标题翻译：功率晶体管限流器
公开(公告)号：US5635868A
公开(公告)日：1997-06-03
申请号：US289122
申请日：1994-08-11
申请人： Natale Aiello , Sergio Palara , Salvatore Scaccianoce
发明人： Natale Aiello , Sergio Palara , Salvatore Scaccianoce
IPC分类号： H03G11/00 , H03K17/0812 , H03K17/082 , H03K17/16 , G05F1/10 , H03K17/60 , H03K17/687
CPC分类号： H03K17/08126 , H03K17/0826 , H03K17/16
摘要： A circuit to limit the maximum current passed from a power transistor (T'p) to a load (ZL) which is connected to an output terminal of the transistor. The circuit includes an error amplifier (1'), a driver circuit (P') for the transistor (T'p), and a current detector for detecting the current (IL) flowing through the load (ZL). The current detector is provided with at least first and second terminals, includes a circuit block (2) having an input terminal connected to the control terminal of (T'p) and an output terminal connected to the current generator internal to the amplifier (1'), one input (B') of the amplifier (1') being connected to the first terminal of (Rs) and the other input (A') connected to the second terminal of (Rs). The introduction of the circuit block lowers the open-loop system gain making it stable and producing a smooth reduction of any rise in the load current (IL).
摘要翻译：用于限制从功率晶体管（T'p）到连接到晶体管的输出端子的负载（ZL）的最大电流的电路。该电路包括误差放大器（1'），用于晶体管（T'p）的驱动电路（P'）和用于检测流过负载（ZL）的电流（IL）的电流检测器。电流检测器设置有至少第一和第二端子，包括具有连接到（T'p）的控制端子的输入端子的电路块（2）和连接到放大器（1）内部的电流发生器的输出端子 '），放大器（1'）的一个输入（B'）连接到（Rs）的第一端子，而另一个输入端（A'）连接到（Rs）的第二端子。电路块的引入降低了开环系统增益，使其稳定，并可以平滑减少负载电流（IL）的任何上升。

2. 发明授权

US5631551A Voltage reference with linear negative temperature variation 失效
标题翻译：电压基准线性负温度变化
公开(公告)号：US5631551A
公开(公告)日：1997-05-20
申请号：US348030
申请日：1994-12-01
申请人： Salvatore Scaccianoce , Sergio Palara , Natale Aiello
发明人： Salvatore Scaccianoce , Sergio Palara , Natale Aiello
IPC分类号： G05F3/30 , G05F3/04
CPC分类号： G05F3/30
摘要： A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.
摘要翻译：带隙电压参考电路在带隙参考电路的输出放大器的反馈线路中使用Vbe电压倍增器网络，从而允许独立地固定所产生的输出电压及其温度系数。从具有正温度系数的带隙基准电压开始，可以获得具有扩展温度变化范围内的线性负温度系数的电压基准。

3. 发明授权

US5735254A Circuit for detecting an overvoltage on a switched inductive load 失效
标题翻译：用于检测开关电感负载上的过电压的电路
公开(公告)号：US5735254A
公开(公告)日：1998-04-07
申请号：US639794
申请日：1996-04-29
申请人： Sergio Palara , Stefano Sueri , Salvatore Scaccianoce
发明人： Sergio Palara , Stefano Sueri , Salvatore Scaccianoce
IPC分类号： G01R19/165 , F02P17/12 , G01R29/027 , H01T13/60 , H02H3/08 , H02H3/20
CPC分类号： H01T13/60 , F02P17/12 , G01R29/0273
摘要： A circuit for use with an ignition system to enable detection of an overvoltage condition in the primary winding of an ignition coil caused by opening of a power switch connected to the primary winding. The circuit senses the overvoltage condition by comparing the voltage on the primary winding to a first threshold voltage and produces a signal at an output terminal indicative of the presence of the overvoltage condition. The output terminal is maintained at a high logic level upon detection of an overvoltage condition and throughout the time duration of the overvoltage condition, and drops to a low logic level when the voltage on the primary winding falls to a second threshold voltage, which is lower than the first threshold voltage. Comparison circuitry is provided for sensing the overvoltage condition by reference to fixed voltage values. Logic circuitry responds to the comparison circuitry to produce the appropriate logic levels at the output terminal.
摘要翻译：一种与点火系统一起使用的电路，用于检测由连接到初级绕组的电源开关的断开引起的点火线圈的初级绕组中的过电压状态。电路通过将初级绕组上的电压与第一阈值电压进行比较来感测过电压状态，并在输出端产生指示存在过电压状态的信号。在检测到过电压状态并且在过电压状态的整个持续时间期间，输出端子保持在高逻辑电平，并且当初级绕组上的电压下降到第二阈值电压时下降到低逻辑电平，这是较低的比第一阈值电压。提供比较电路用于通过参考固定电压值来感测过电压状态。逻辑电路响应于比较电路，以在输出端产生适当的逻辑电平。

4. 发明授权

US6051933A Bipolar power device having an integrated thermal protection for driving electric loads 失效
标题翻译：具有用于驱动电负载的集成热保护的双极功率器件
公开(公告)号：US6051933A
公开(公告)日：2000-04-18
申请号：US638382
申请日：1996-04-26
申请人： Natale Aiello , Atanasio La Barbera , Sergio Palara
发明人： Natale Aiello , Atanasio La Barbera , Sergio Palara
IPC分类号： H02H5/04 , H03K17/08 , H03K17/0812 , H05B41/285 , H05B37/00 , H03K17/56
CPC分类号： H05B41/2856 , H03K17/08126 , H02H5/044 , H03K2017/0806
摘要： A monolithically integrated power device for driving electrical loads includes a power stage having a high-voltage bipolar transistor and a low-voltage auxiliary transistor cascade-connected and inserted between a first power supply terminal and a second power supply terminal of the device. The power device also includes a driver circuit for the power stage having an input connected to an input terminal of the device. In accordance with the present invention the device includes a circuit for protection thereof against an excessive temperature rise and controlling power down of the power stage. It includes specifically a temperature sensing circuit which generates a signal dependent on the temperature present in the device, a comparator circuit which receives this signal and compares it with a reference voltage and at least a first switch circuit generating an interdiction signal when the temperature in the device exceeds a preset maximum value and which is interlocked with an output of the comparator circuit and connected functionally through its output to the power stage. The device is advantageously usable in a fluorescent lamp driving circuit, that is to say in the so-called "lamp ballast".
摘要翻译：用于驱动电负载的单片集成功率器件包括具有高压双极晶体管的功率级和串联连接并插入在器件的第一电源端子和第二电源端子之间的低压辅助晶体管。功率器件还包括用于功率级的驱动器电路，其具有连接到器件的输入端子的输入。根据本发明，该装置包括用于保护其抵抗过度温度上升并控制功率级的掉电的电路。其具体包括温度检测电路，其产生取决于设备中存在的温度的信号;比较器电路，其接收该信号并将其与参考电压进行比较;以及至少第一开关电路，当至少第一开关电路产生截止信号时，器件超过预设的最大值，并与比较器电路的输出互锁，并通过其输出功能级连接到功率级。该装置有利地可用于荧光灯驱动电路，也就是说在所谓的“灯镇流器”中。

5. 发明授权

US5382837A Switching circuit for semiconductor device 失效
标题翻译：半导体器件开关电路
公开(公告)号：US5382837A
公开(公告)日：1995-01-17
申请号：US902385
申请日：1992-06-23
申请人： Natale Aiello , Sergio Palara
发明人： Natale Aiello , Sergio Palara
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/082 , H03K17/00 , H03K17/0814 , H03K17/30 , H03K17/62 , H03K19/094 , H03K17/735
CPC分类号： H03K17/30 , H01L27/0248 , H01L27/0821 , H03K17/08146 , H03K17/6242
摘要： A circuit for connecting a first circuit node to either a second or a third circuit node relative to the voltage potential on the third circuit node includes two bipolar transistors connected in series. The collectors of both transistors are connected to the first circuit node. The emitter of the first transistor is connected to the second circuit node and the emitter of the second transistor is connected to the third circuit node. Means are provided for maintaining the base of the second transistor at a constant, preset bias voltage.
摘要翻译：用于将第一电路节点连接到第二或第三电路节点相对于第三电路节点上的电压电位的电路包括串联连接的两个双极晶体管。两个晶体管的集电极连接到第一电路节点。第一晶体管的发射极连接到第二电路节点，第二晶体管的发射极连接到第三电路节点。提供了用于将第二晶体管的基极保持在恒定的预设偏置电压的装置。

6. 发明授权

US5661430A Circuit for preventing operation of parasitic components in integrated circuits having a power stage and low-voltage control circuitry 失效
标题翻译：用于防止具有功率级和低压控制电路的集成电路中的寄生元件的操作的电路
公开(公告)号：US5661430A
公开(公告)日：1997-08-26
申请号：US529805
申请日：1995-09-19
申请人： Sergio Palara , Raffaele Zambrano
发明人： Sergio Palara , Raffaele Zambrano
IPC分类号： H01L27/04 , H01L27/02 , H01L29/78 , H03K17/08 , H03K17/687 , H03K17/16
CPC分类号： H01L27/0248
摘要： An integrated circuit including a power stage, a low-voltage component separated from the power stage by an isolating region and a reference potential region at a reference potential. The power stage includes an N-type substrate region which may be biased to a terminal voltage with respect to the reference potential and the isolating region has P-type conductivity. The low-voltage component includes an N-type input region receiving an input voltage. The input voltage and the terminal voltage may oscillate a few tens of volts above or below the reference potential and turn on parasitic transistors. To prevent turning on of the parasitic transistors, switchable conductive paths are interposed between the isolating region on the one hand, and the substrate region, the input region and the reference potential region on the other, for electrically connecting the isolating region to one of the substrate region, input region and reference potential region which presents instant by instant the lowest potential.
摘要翻译：一种集成电路，包括功率级，通过隔离区与功率级分离的低电压分量和参考电位的参考电位区。功率级包括可以相对于参考电位偏置到端电压的N型衬底区域，并且隔离区域具有P型导电性。低电压分量包括接收输入电压的N型输入区域。输入电压和端子电压可能会振荡高于或低于参考电位几十伏，并接通寄生晶体管。为了防止寄生晶体管的导通，可切换的导电路径一方面插入在隔离区域与另一方面的衬底区域，输入区域和参考电势区域之间，用于将隔离区域电连接到衬底区域，输入区域和参考电位区域，其立即呈现最低电位。

7. 发明授权

US5606278A Circuit for limiting the output voltage of a power transistor 失效
标题翻译：用于限制功率晶体管的输出电压的电路
公开(公告)号：US5606278A
公开(公告)日：1997-02-25
申请号：US520616
申请日：1995-08-30
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： H01L29/772 , H01L21/8222 , H01L27/06 , H01L29/76 , H03K17/08 , H03K17/0814 , H03K17/16 , H03K17/64 , H03K5/08 , H03K17/00
CPC分类号： H03K17/08146 , H03K17/16 , H03K17/64
摘要： A circuit for limiting the output voltage from a power transistor connected in series with a resonant load between a voltage supply and a voltage reference, ground, is disclosed. The circuit includes a semiconductor junction element, in particular a diode of the SCR type, having an anode terminal connected to the voltage supply, a cathode terminal connected to a common circuit node between the power transistor and the resonant load, and a control terminal connected to a reference voltage of predetermined value. The reference voltage can be constructed by using a resistor connected in series with a diode across the voltage supply. The SCR diode is constructed using the parasitic PNP-NPN transistors which exist in the structure of the power transistor.
摘要翻译：公开了一种用于限制与电源和参考电压接地之间的谐振负载串联连接的功率晶体管的输出电压的电路。电路包括半导体接合元件，特别是SCR型二极管，具有连接到电压源的阳极端子，连接到功率晶体管和谐振负载之间的公共电路节点的阴极端子以及连接到控制端子达到预定值的参考电压。参考电压可以通过使用与电压源上的二极管串联连接的电阻来构造。 SCR二极管使用存在于功率晶体管结构中的寄生PNP-NPN晶体管构成。

8. 发明授权

US5408124A Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance 失效
标题翻译：具有垂直结构的单片半导体器件，具有具有镇流电阻的深基极和手指发射极功率晶体管
公开(公告)号：US5408124A
公开(公告)日：1995-04-18
申请号：US982081
申请日：1992-11-25
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/08 , H01L29/73 , H01L29/732 , H01L29/72
CPC分类号： H01L29/0804 , H01L29/7304
摘要： A finger-emitter power transistor including a substrate suitable for operating as the collector of the power transistor, an epitaxial layer superimposed over the substrate (and providing a base region for the transistor), and at least one buried emitter region (for each finger of the device) below the surface of the epitaxial layer. Each buried emitter region is provided with at least one connection area to an emitter surface metallization. The connection areas between the emitter regions and their emitter surface metallization are made in various widths to provide a ballast resistance of an adequate value.
摘要翻译：一种手指发射极功率晶体管，包括适于作为功率晶体管的集电极工作的衬底，叠加在衬底上的外延层（并且为晶体管提供基极区域），以及至少一个掩埋发射极区域该器件）在外延层的表面下方。每个埋置的发射极区域设置有至少一个与发射极表面金属化的连接区域。发射极区域和发射极表面金属化之间的连接区域以各种宽度制成，以提供足够值的镇流电阻。

9. 发明授权

US5245211A Device for the protection against breakdown of an N+ type diffused region inserted in vertical-type semiconductor integrated power structure 失效
标题翻译：用于防止在垂直型半导体集成电力结构中插入的N +型扩散区域的保护装置
公开(公告)号：US5245211A
公开(公告)日：1993-09-14
申请号：US605448
申请日：1990-10-30
申请人： Mario Paparo , Sergio Palara
发明人： Mario Paparo , Sergio Palara
IPC分类号： H01L29/74 , H01L21/822 , H01L27/02 , H01L27/04
CPC分类号： H01L27/0248
摘要： A device accomplishes protection against breakdown of an N+ type diffused region (6) inserted in a vertical-type semiconductor integrated power structure. Such a structure comprises N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which a grounded P type insulation pocket (3) is obtained. The insulation pocket (3) contains an N type region (4) including a P type region (5) for the containment of the N+ type diffused region (6). The diffused region (6) is insulated electrically with respect to the P type containment region (5).

10. 发明授权

US5177659A Device for protection against the short circuit of an MOS-type power device, with a preset dependance on the temperature at which the power device operates 失效
标题翻译：用于防止MOS型功率器件短路的装置，其预设依赖于功率器件工作的温度
公开(公告)号：US5177659A
公开(公告)日：1993-01-05
申请号：US605449
申请日：1990-10-30
申请人： Michele Zisa , Giuseppe Scilla , Sergio Palara
发明人： Michele Zisa , Giuseppe Scilla , Sergio Palara
IPC分类号： H01L29/78 , H01L27/02 , H01L27/04 , H03K17/08 , H03K17/082 , H03K17/14
CPC分类号： H03K17/0822 , H01L27/0251 , H03K17/145 , H03K2017/0806
摘要： The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch cirucit arranged in parallel with a main branch circuit which includes the power transistor. The secondary branch includes a control MOS transistor having the same characteristics as the power transistor under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor. The gate of the control transistor is connected directly with that of the power transistor. The secondary branch also includes means sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor, act on the gate common to the control and to the power transistors so as to lower its voltage and thus limit the conduction of same.
摘要翻译：用于防止MOS型功率器件的短路的装置包括与包括功率晶体管的主分支电路并联布置的至少一个次级分支电路。次级分支包括具有与被控制的功率晶体管相同的特性的控制MOS晶体管，以及导通等于流过功率晶体管的电流的一部分的电流的能力。控制晶体管的栅极直接与功率晶体管的栅极连接。次级分支还包括对温度敏感的装置，在对应于功率晶体管的短路电流的电流的情况下，对作为控制和公用的功率晶体管的栅极起作用以降低其电压，因此限制传导相同。

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