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1. 发明授权

US5464993A Monolithic integrated bridge transistor circuit and corresponding manufacturing process 失效
标题翻译：单片集成电桥晶体管电路及相应的制造工艺
公开(公告)号：US5464993A
公开(公告)日：1995-11-07
申请号：US124245
申请日：1993-09-20
申请人： Raffaele Zambrano , Sergio Palara
发明人： Raffaele Zambrano , Sergio Palara
IPC分类号： H01L27/06 , H01L29/10
CPC分类号： H01L27/0617
摘要： A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1,M2) together with vertically-conducting bipolar junction transistors transistors (T1,T2). These IGBT transistors are laterally conducting, having drain terminals (9,19) formed on the surface of the integrated circuit (1), and through such terminals, they are connected to another pair of transistors (T1,T2) of the bipolar type.
摘要翻译：一种适合功率应用的单片集成的晶体管桥式电路，包括至少一对IGBT晶体管（M1，M2）以及垂直导电的双极结型晶体管晶体管（T1，T2）。这些IGBT晶体管是侧向导通的，具有形成在集成电路（1）的表面上的漏极端子（9,19），并且通过这些端子连接到双极型的另一对晶体管（T1，T2）。

2. 发明授权

US5661430A Circuit for preventing operation of parasitic components in integrated circuits having a power stage and low-voltage control circuitry 失效
标题翻译：用于防止具有功率级和低压控制电路的集成电路中的寄生元件的操作的电路
公开(公告)号：US5661430A
公开(公告)日：1997-08-26
申请号：US529805
申请日：1995-09-19
申请人： Sergio Palara , Raffaele Zambrano
发明人： Sergio Palara , Raffaele Zambrano
IPC分类号： H01L27/04 , H01L27/02 , H01L29/78 , H03K17/08 , H03K17/687 , H03K17/16
CPC分类号： H01L27/0248
摘要： An integrated circuit including a power stage, a low-voltage component separated from the power stage by an isolating region and a reference potential region at a reference potential. The power stage includes an N-type substrate region which may be biased to a terminal voltage with respect to the reference potential and the isolating region has P-type conductivity. The low-voltage component includes an N-type input region receiving an input voltage. The input voltage and the terminal voltage may oscillate a few tens of volts above or below the reference potential and turn on parasitic transistors. To prevent turning on of the parasitic transistors, switchable conductive paths are interposed between the isolating region on the one hand, and the substrate region, the input region and the reference potential region on the other, for electrically connecting the isolating region to one of the substrate region, input region and reference potential region which presents instant by instant the lowest potential.
摘要翻译：一种集成电路，包括功率级，通过隔离区与功率级分离的低电压分量和参考电位的参考电位区。功率级包括可以相对于参考电位偏置到端电压的N型衬底区域，并且隔离区域具有P型导电性。低电压分量包括接收输入电压的N型输入区域。输入电压和端子电压可能会振荡高于或低于参考电位几十伏，并接通寄生晶体管。为了防止寄生晶体管的导通，可切换的导电路径一方面插入在隔离区域与另一方面的衬底区域，输入区域和参考电势区域之间，用于将隔离区域电连接到衬底区域，输入区域和参考电位区域，其立即呈现最低电位。

3. 发明授权

US5622876A Method for making monolithic integrated bridge transistor circuit 失效
标题翻译：单片集成电桥晶体管电路的制作方法
公开(公告)号：US5622876A
公开(公告)日：1997-04-22
申请号：US458083
申请日：1995-06-01
申请人： Raffaele Zambrano , Sergio Palara
发明人： Raffaele Zambrano , Sergio Palara
IPC分类号： H01L27/06 , H01L2/265
CPC分类号： H01L27/0617
摘要： A monolithically integrated, transistor bridge circuit of a type suiting power applications, comprises at least one pair of IGBT transistors (M1 , M2) together with vertically-conducting bipolar junction transistors transistors (T1, T2). These IGBT transistors are laterally conducting, having drain terminals (9, 19) formed on the surface of the integrated circuit (1), and through such terminals, they are connected to another pair of transistors (T1, T2) of the bipolar type.
摘要翻译：一种适合功率应用的单片集成的晶体管桥式电路，包括至少一对IGBT晶体管（M1，M2）以及垂直导电的双极结型晶体管晶体管（T1，T2）。这些IGBT晶体管是侧向导通的，具有形成在集成电路（1）的表面上的漏极端子（9,19），并且通过这些端子连接到双极型的另一对晶体管（T1，T2）。

4. 发明授权

US5631551A Voltage reference with linear negative temperature variation 失效
标题翻译：电压基准线性负温度变化
公开(公告)号：US5631551A
公开(公告)日：1997-05-20
申请号：US348030
申请日：1994-12-01
申请人： Salvatore Scaccianoce , Sergio Palara , Natale Aiello
发明人： Salvatore Scaccianoce , Sergio Palara , Natale Aiello
IPC分类号： G05F3/30 , G05F3/04
CPC分类号： G05F3/30
摘要： A bandgap voltage reference circuit employs a Vbe voltage multiplier network in a feedback line of an output amplifier of the bandgap reference circuit, thus permitting to independently fix the output voltage that is produced and the temperature coefficient thereof. A voltage reference having a linear negative temperature coefficient in an extended temperature variation range may be obtained, starting from a bandgap reference voltage with a positive temperature coefficient.
摘要翻译：带隙电压参考电路在带隙参考电路的输出放大器的反馈线路中使用Vbe电压倍增器网络，从而允许独立地固定所产生的输出电压及其温度系数。从具有正温度系数的带隙基准电压开始，可以获得具有扩展温度变化范围内的线性负温度系数的电压基准。

5. 发明授权

US5606278A Circuit for limiting the output voltage of a power transistor 失效
标题翻译：用于限制功率晶体管的输出电压的电路
公开(公告)号：US5606278A
公开(公告)日：1997-02-25
申请号：US520616
申请日：1995-08-30
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： H01L29/772 , H01L21/8222 , H01L27/06 , H01L29/76 , H03K17/08 , H03K17/0814 , H03K17/16 , H03K17/64 , H03K5/08 , H03K17/00
CPC分类号： H03K17/08146 , H03K17/16 , H03K17/64
摘要： A circuit for limiting the output voltage from a power transistor connected in series with a resonant load between a voltage supply and a voltage reference, ground, is disclosed. The circuit includes a semiconductor junction element, in particular a diode of the SCR type, having an anode terminal connected to the voltage supply, a cathode terminal connected to a common circuit node between the power transistor and the resonant load, and a control terminal connected to a reference voltage of predetermined value. The reference voltage can be constructed by using a resistor connected in series with a diode across the voltage supply. The SCR diode is constructed using the parasitic PNP-NPN transistors which exist in the structure of the power transistor.
摘要翻译：公开了一种用于限制与电源和参考电压接地之间的谐振负载串联连接的功率晶体管的输出电压的电路。电路包括半导体接合元件，特别是SCR型二极管，具有连接到电压源的阳极端子，连接到功率晶体管和谐振负载之间的公共电路节点的阴极端子以及连接到控制端子达到预定值的参考电压。参考电压可以通过使用与电压源上的二极管串联连接的电阻来构造。 SCR二极管使用存在于功率晶体管结构中的寄生PNP-NPN晶体管构成。

6. 发明授权

US5408124A Monolithic semiconductor device having a vertical structure with a deep-base and finger-emitter power transistor having a ballast resistance 失效
标题翻译：具有垂直结构的单片半导体器件，具有具有镇流电阻的深基极和手指发射极功率晶体管
公开(公告)号：US5408124A
公开(公告)日：1995-04-18
申请号：US982081
申请日：1992-11-25
申请人： Sergio Palara
发明人： Sergio Palara
IPC分类号： H01L21/331 , H01L21/8222 , H01L27/06 , H01L29/08 , H01L29/73 , H01L29/732 , H01L29/72
CPC分类号： H01L29/0804 , H01L29/7304
摘要： A finger-emitter power transistor including a substrate suitable for operating as the collector of the power transistor, an epitaxial layer superimposed over the substrate (and providing a base region for the transistor), and at least one buried emitter region (for each finger of the device) below the surface of the epitaxial layer. Each buried emitter region is provided with at least one connection area to an emitter surface metallization. The connection areas between the emitter regions and their emitter surface metallization are made in various widths to provide a ballast resistance of an adequate value.
摘要翻译：一种手指发射极功率晶体管，包括适于作为功率晶体管的集电极工作的衬底，叠加在衬底上的外延层（并且为晶体管提供基极区域），以及至少一个掩埋发射极区域该器件）在外延层的表面下方。每个埋置的发射极区域设置有至少一个与发射极表面金属化的连接区域。发射极区域和发射极表面金属化之间的连接区域以各种宽度制成，以提供足够值的镇流电阻。

7. 发明授权

US5245211A Device for the protection against breakdown of an N+ type diffused region inserted in vertical-type semiconductor integrated power structure 失效
标题翻译：用于防止在垂直型半导体集成电力结构中插入的N +型扩散区域的保护装置
公开(公告)号：US5245211A
公开(公告)日：1993-09-14
申请号：US605448
申请日：1990-10-30
申请人： Mario Paparo , Sergio Palara
发明人： Mario Paparo , Sergio Palara
IPC分类号： H01L29/74 , H01L21/822 , H01L27/02 , H01L27/04
CPC分类号： H01L27/0248
摘要： A device accomplishes protection against breakdown of an N+ type diffused region (6) inserted in a vertical-type semiconductor integrated power structure. Such a structure comprises N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which a grounded P type insulation pocket (3) is obtained. The insulation pocket (3) contains an N type region (4) including a P type region (5) for the containment of the N+ type diffused region (6). The diffused region (6) is insulated electrically with respect to the P type containment region (5).

8. 发明授权

US5177659A Device for protection against the short circuit of an MOS-type power device, with a preset dependance on the temperature at which the power device operates 失效
标题翻译：用于防止MOS型功率器件短路的装置，其预设依赖于功率器件工作的温度
公开(公告)号：US5177659A
公开(公告)日：1993-01-05
申请号：US605449
申请日：1990-10-30
申请人： Michele Zisa , Giuseppe Scilla , Sergio Palara
发明人： Michele Zisa , Giuseppe Scilla , Sergio Palara
IPC分类号： H01L29/78 , H01L27/02 , H01L27/04 , H03K17/08 , H03K17/082 , H03K17/14
CPC分类号： H03K17/0822 , H01L27/0251 , H03K17/145 , H03K2017/0806
摘要： The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch cirucit arranged in parallel with a main branch circuit which includes the power transistor. The secondary branch includes a control MOS transistor having the same characteristics as the power transistor under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor. The gate of the control transistor is connected directly with that of the power transistor. The secondary branch also includes means sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor, act on the gate common to the control and to the power transistors so as to lower its voltage and thus limit the conduction of same.
摘要翻译：用于防止MOS型功率器件的短路的装置包括与包括功率晶体管的主分支电路并联布置的至少一个次级分支电路。次级分支包括具有与被控制的功率晶体管相同的特性的控制MOS晶体管，以及导通等于流过功率晶体管的电流的一部分的电流的能力。控制晶体管的栅极直接与功率晶体管的栅极连接。次级分支还包括对温度敏感的装置，在对应于功率晶体管的短路电流的电流的情况下，对作为控制和公用的功率晶体管的栅极起作用以降低其电压，因此限制传导相同。

9. 发明授权

US4644294A Device for protecting a push-pull output stage against a short-circuit between the output terminal and the positive pole of the supply 失效
标题翻译：用于保护推挽输出级免受电源的输出端子和正极之间短路的装置
公开(公告)号：US4644294A
公开(公告)日：1987-02-17
申请号：US693777
申请日：1985-01-23
申请人： Sergio Palara , Aldo Torazzina
发明人： Sergio Palara , Aldo Torazzina
IPC分类号： H03F1/42 , H03F1/52 , H03F3/20 , H03F3/213 , H03F3/30
CPC分类号： H03F1/52
摘要： A device for protecting a push-pull output stage (G.sub.v) against a short-circuit between the output terminal (A) and the positive pole (+V.sub.cc) of the supply, comprising a first (A.sub.1) and a second (A.sub.2) threshold comparator, both having a first input terminal coupled to the output terminal (A) of the output stage and both having a second input terminal coupled to a predetermined voltage reference. The reference potential (RIF.sub.1) to which the threshold comparator (A.sub.1) is coupled is kept at a potential which is lower than the other reference potential (RIF.sub.2) to which threshold comparator (A.sub.2) is coupled. The output terminal of the first comparator (A.sub.2) is coupled to the activation terminal of a low impedance circuit means (LI) inserted between the output terminal (A) of the output stage and the negative pole (-V.sub.cc) of the supply. The output terminal of the second comparator (A.sub.2) is coupled to an inhibitor terminal of the output power amplifier stage (G.sub.v).
摘要翻译：一种用于保护推挽输出级（Gv）抵抗电源的输出端（A）和正极（+ Vcc）之间的短路的装置，包括第一（A1）和第二（A2）阈值比较器都具有耦合到输出级的输出端（A）的第一输入端，并且具有耦合到预定电压基准的第二输入端。阈值比较器（A1）耦合到的参考电位（RIF1）保持在低于阈值比较器（A2）耦合到的另一参考电位（RIF2）的电位。第一比较器（A2）的输出端子耦合到插入在输出级的输出端子（A）和电源的负极（-Vcc）之间的低阻抗电路装置（LI）的激活端子。第二比较器（A2）的输出端耦合到输出功率放大器级（Gv）的抑制端。

10. 发明授权

US4623950A Protective device for a power element of an integrated circuit 失效
标题翻译：集成电路功率元件的保护装置
公开(公告)号：US4623950A
公开(公告)日：1986-11-18
申请号：US574964
申请日：1984-01-30
申请人： Sergio Palara , Aldo Torazzina
发明人： Sergio Palara , Aldo Torazzina
IPC分类号： H03F1/52 , H01L27/02 , H03F1/42 , H02H3/42
CPC分类号： H01L27/0248
摘要： A protective device for a power element of an integrated circuit includes a circuit element for detecting and processing the value of the current flowing through the power element and the voltage supplied to the power element. The circuit element generates a measuring signal which, when it reaches a predetermined limit value, activates a threshold circuit which reduces the current level in the power element. The protective device also includes a circuit element for amplifying the measuring signal when it reaches the predetermined limit value.
摘要翻译：用于集成电路的功率元件的保护装置包括用于检测和处理流过功率元件的电流值和提供给功率元件的电压的电路元件。电路元件产生测量信号，当测量信号达到预定极限值时，激活阈值电路，其降低功率元件中的电流电平。保护装置还包括用于在测量信号达到预定极限值时放大测量信号的电路元件。

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