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1. 发明授权

US06302965B1 Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces 失效
标题翻译：用于流动的分散板将用于化学气相沉积膜的化合物蒸发到半导体表面上
公开(公告)号：US06302965B1
公开(公告)日：2001-10-16
申请号：US09638506
申请日：2000-08-15
申请人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
发明人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45576 , C23C16/16 , C23C16/455
摘要： A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face. The hole and plurality of passages are designed to have sufficiently large diameters so as to keep pressure drops low with respect to vapor flowing through the plate.
摘要翻译：用于在低压下均匀流动到处理室的分散板，例如用于将金属层沉积到半导体上的钨化合物的气化材料具有中心轴，输入面和输出面的盘状体。分散板在其输入面中具有沿着中心轴线的杯状入口，用于接收气化材料流和多个用于蒸汽流动的通道，每个通道具有长度和直径并且从入口径向延伸，如轮的轮辐相对于从输入面到输出面的中心轴线呈倾斜角。两个环形槽被切割成输出面并与通道的相应端相交。该板具有中心孔，该中心孔具有沿着中心轴线从输入面入口到输出面延伸的扩口直径。孔和多个通道被设计成具有足够大的直径，以便相对于流过板的蒸气保持压力降低。

2. 发明授权

US06299692B1 Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition 失效
标题翻译：用于在化学气相沉积期间将各种前体材料蒸发并流动到半导体晶片上
公开(公告)号：US06299692B1
公开(公告)日：2001-10-09
申请号：US09621335
申请日：2000-07-21
申请人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
发明人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
IPC分类号： C23C1600
CPC分类号： C23C16/4485
摘要： A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.
摘要翻译：将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴，纵向腔，输入端和输出端的灯泡状体。空腔具有用于接收蒸发的前体化合物流的开口。存在多个用于蒸汽流过头部的通道，每个通道具有长度和直径。它们相对于从中心轴线到中心轴线的倾斜角度，沿着腔体的周边和周围径向延伸，如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。空腔具有良好的底部，用于捕获前体化合物的任何液滴或颗粒，并防止它们离开头部，除了作为蒸气。多个通道具有足够大的直径，使得在流过头部的蒸气中只有低压降。

3. 发明授权

US07699023B2 Gas delivery apparatus for atomic layer deposition 有权
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：US07699023B2
公开(公告)日：2010-04-20
申请号：US11925667
申请日：2007-10-26
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima , Mei Chang
IPC分类号： C23C16/455 , C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/34 , C23C16/4404 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76841 , H01L21/76843 , H01L21/76846 , H01L21/76871 , Y10T137/0396
摘要： Embodiments as described herein provide an apparatus and a method for performing an atomic layer deposition process. In one embodiment, a deposition chamber assembly contains a substrate support having a substrate receiving surface, and a chamber lid containing a tapered passageway extending from a central portion of the chamber lid, and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The system also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve. In one example, the gas source is a gas box assembly which is attached to the deposition chamber by at least one disconnect fitting and contains an inlet tube directed away from the gas outlet.
摘要翻译：本文所述的实施例提供了用于执行原子层沉积工艺的装置和方法。在一个实施例中，沉积室组件包含具有基板接收表面的基板支撑件和包含从腔室盖的中心部分延伸的锥形通道的腔室盖，以及从通道延伸到外部部分的底部表面室盖，底表面的形状和尺寸以基本上覆盖基板接收表面。该系统还包括联接到逐渐扩展的通道的一个或多个阀，以及耦合到每个阀的一个或多个气体源。在一个示例中，气体源是气体箱组件，其通过至少一个分离配件附接到沉积室，并且包含远离气体出口的入口管。

4. 发明申请

US20090197406A1 SEQUENTIAL DEPOSITION OF TANTALUM NITRIDE USING A TANTALUM-CONTAINING PRECURSOR AND A NITROGEN-CONTAINING PRECURSOR 有权
标题翻译：使用含TANTALUM的前驱体和含氮的前驱体的氮化钛的顺序沉积
公开(公告)号：US20090197406A1
公开(公告)日：2009-08-06
申请号：US12417439
申请日：2009-04-02
申请人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
发明人： Wei Cao , Hua Chung , Vincent Ku , Ling Chen
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： C23C16/4408 , C23C16/045 , C23C16/34 , C23C16/45557 , H01L21/28562
摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.
摘要翻译：本发明的实施例提供了一种通过采用原子层沉积（ALD）工艺在衬底上形成氮化钽材料的方法。该方法包括将安瓿内的钽前体加热至预定温度以形成钽前体气体，并将基底依次暴露于钽前体气体和氮气前体以形成氮化钽材料。此后，可以在基板上沉积成核层和体层。在一个实例中，在等离子体增强的ALD工艺期间可以由氮前体形成自由基氮化合物。氮前体可以包括氮或氨。在另一个实例中，在沉积过程中可以使用金属 - 有机钽前体。

5. 发明申请

US20060213558A1 Valve design and configuration for fast delivery system 审中-公开
标题翻译：阀门设计和配置快速输送系统
公开(公告)号：US20060213558A1
公开(公告)日：2006-09-28
申请号：US11432101
申请日：2006-05-11
申请人： Vincent Ku , Ling Chen , Dien-Yeh Wu
发明人： Vincent Ku , Ling Chen , Dien-Yeh Wu
IPC分类号： F16K49/00
CPC分类号： F16K7/16 , F16K27/0236 , F16K27/029 , Y10T137/4259 , Y10T137/6606 , Y10T137/86389 , Y10T137/8766 , Y10T137/87684
摘要： Embodiments of the invention relate to an apparatus for rapid delivery of pulses of one or more reactants to a substrate processing chamber. In one embodiment, a valve assembly includes a valve body having at least two ports comprising a purge inlet and an outlet, a valve seat surrounding one of the ports, an annular groove formed around the valve seat coupling the purge inlet and the outlet, and a diaphragm assembly. The diaphragm assembly further includes a diaphragm movable to contact the valve seat, a piston coupled to the diaphragm, and a cylinder to house the piston. In another embodiment, the cylinder forms an actuation chamber having an internal volume of about 3.0 cm3.
摘要翻译：本发明的实施例涉及一种用于将一种或多种反应物的脉冲快速传递到衬底处理室的装置。在一个实施例中，阀组件包括具有至少两个端口的阀体，所述至少两个端口包括净化入口和出口，围绕所述端口中的一个的阀座，围绕联接净化入口和出口的阀座形成的环形槽，以及隔膜组件。隔膜组件还包括可移动以接触阀座的隔膜，联接到隔膜的活塞以及容纳活塞的气缸。在另一个实施例中，气缸形成具有约3.0cm 3内部体积的致动室。

6. 发明申请

US20050173068A1 Gas delivery apparatus and method for atomic layer deposition 有权
公开(公告)号：US20050173068A1
公开(公告)日：2005-08-11
申请号：US11077753
申请日：2005-03-11
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , C23F1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： One embodiment of the gas delivery assembly comprises a covering member having an expanding channel at a central portion of the covering member and having a bottom surface extending from the expanding channel to a peripheral portion of the covering member. One or more gas conduits are coupled to the expanding channel in which the one or more gas conduits are positioned at an angle from a center of the expanding channel. One embodiment of a chamber comprises a substrate support having a substrate receiving surface. The chamber further includes a chamber lid having a passageway at a central portion of the chamber lid and a tapered bottom surface extending from the passageway to a peripheral portion of the chamber lid. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. In one aspect, the bottom surface of the chamber lid may be tapered. In another aspect, a reaction zone defined between the chamber lid and the substrate receiving surface may comprise a small volume. In still another aspect, the passageway may comprise a tapered expanding channel extending from the central portion of the chamber lid. Another embodiment of the chamber comprises a substrate support having a substrate receiving surface. The chamber further comprises a chamber lid having an expanding channel extending from a central portion of the chamber lid and having a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid. One or more gas conduits are disposed around an upper portion of the expanding channel in which the one or more gas conduits are disposed at an angle from a center of the expanding channel. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface.

7. 发明授权

US06527865B1 Temperature controlled gas feedthrough 有权
标题翻译：温度控制气体馈通
公开(公告)号：US06527865B1
公开(公告)日：2003-03-04
申请号：US09595767
申请日：2000-06-16
申请人： Talex Sajoto , Charles Dornfest , Leonid Selyutin , Jun Zhao , Vincent Ku , Xiao Liang Jin
发明人： Talex Sajoto , Charles Dornfest , Leonid Selyutin , Jun Zhao , Vincent Ku , Xiao Liang Jin
IPC分类号： C23C16000
CPC分类号： C23C16/4557 , C23C16/4401 , C23C16/4402 , C23C16/4409 , C23C16/4411 , C23C16/4412 , C23C16/4481 , C23C16/45561 , H01J37/3244 , H01J37/32522 , H01L21/67017 , H01L21/6715
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝在腔室部件上。该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。

8. 发明申请

US20080038463A1 ATOMIC LAYER DEPOSITION PROCESS 审中-公开
标题翻译：原子层沉积过程
公开(公告)号：US20080038463A1
公开(公告)日：2008-02-14
申请号：US11873885
申请日：2007-10-17
申请人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
发明人： Ling Chen , Vincent Ku , Dien-Yeh Wu , Hua Chung , Alan Ouye , Norman Nakashima
IPC分类号： C23C16/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： In one embodiment, a method for depositing a material on a substrate during an atomic layer deposition (ALD) process is provided which includes positioning the substrate on a substrate support within a process chamber, flowing a carrier gas into an expanding channel to form a circular flow of the carrier gas, exposing the substrate to the circular flow, pulsing a first reactant gas into the circular flow, and depositing a material onto the substrate. The method further provides that the process chamber has a chamber lid containing a centrally positioned expanding channel, a tapered bottom surface extending from the expanding channel to a peripheral portion of the chamber lid, at least two gas inlets in fluid communication with the expanding channel, and at least two conduits positioned to provide a gas flow having a circular pattern within the expanded channel.
摘要翻译：在一个实施例中，提供了在原子层沉积（ALD）工艺期间在衬底上沉积材料的方法，其包括将衬底定位在处理室内的衬底支撑件上，使载气流入扩展通道以形成圆形载气的流动，将基底暴露于圆形流动，将第一反应气体脉冲成圆形流，以及将材料沉积到基底上。该方法还提供了处理室，其具有容纳中心定位的扩张通道的腔室盖，从膨胀通道延伸到腔室盖的周边部分的锥形底面，与扩张通道流体连通的至少两个气体入口，以及至少两个管道，其定位成在膨胀通道内提供具有圆形图案的气流。

9. 发明申请

US20070110898A1 METHOD AND APPARATUS FOR PROVIDING PRECURSOR GAS TO A PROCESSING CHAMBER 有权
标题翻译：将前期气体提供给加工室的方法和装置
公开(公告)号：US20070110898A1
公开(公告)日：2007-05-17
申请号：US11613153
申请日：2006-12-19
申请人： Seshadri Ganguli , Ling Chen , Vincent Ku
发明人： Seshadri Ganguli , Ling Chen , Vincent Ku
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/34 , C23C16/4402 , C23C16/4481 , C23C16/4482 , C23C16/4487 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： In one embodiment, an apparatus for generating a gaseous chemical precursor used in a vapor deposition processing system is provided which includes a canister comprising a sidewall, a top, and a bottom encompassing an interior volume therein, an inlet port and an outlet port in fluid communication with the interior volume, and an inlet tube extending from the inlet port into the canister. The apparatus further may contain a plurality of baffles within the interior volume extending between the top and the bottom of the canister, and a precursor slurry contained within the interior volume, wherein the precursor slurry contains a solid precursor material and a thermally conductive material that is unreactive towards the solid precursor material. In one example, the solid precursor material solid precursor material is pentakis(dimethylamino) tantalum.
摘要翻译：在一个实施方案中，提供了一种用于产生气相沉积处理系统中使用的气态化学前体的装置，其包括一个罐，该罐包括侧壁，顶部和包围内部容积的底部，入口和出口在流体与内部容积的连通，以及从入口延伸到罐中的入口管。该装置还可以在内部容积内容纳多个挡板，其在罐的顶部和底部之间延伸，以及包含在内部容积内的前体浆料，其中前体浆料包含固体前体材料和导热材料，对固体前体材料没有反应。在一个实例中，固体前体材料固体前体材料是五（二甲基氨基）钽。

10. 发明授权

US06258170B1 Vaporization and deposition apparatus 失效
标题翻译：蒸发沉淀装置及工艺
公开(公告)号：US06258170B1
公开(公告)日：2001-07-10
申请号：US08927700
申请日：1997-09-11
申请人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
发明人： Sasson Somekh , Jun Zhao , Charles Dornfest , Talex Sajoto , Leonid Selyutin , Vincent Ku , Chris Wang , Frank Chang , Po Tang
IPC分类号： C23C1600
CPC分类号： C23C16/4409 , C23C16/4401 , C23C16/4412 , C23C16/4481 , C23C16/45561 , C23C16/4557 , H01L21/67017 , H01L21/6715 , Y10S261/65 , Y10T137/87684
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。特别考虑的是用于在硅晶片上沉积诸如钡，锶，氧化钛（BST）膜的金属氧化物膜的装置和方法，以使集成电路电容器用于高容量动态存储器模块。

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