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1. 发明授权

US06527865B1 Temperature controlled gas feedthrough 有权
标题翻译：温度控制气体馈通
公开(公告)号：US06527865B1
公开(公告)日：2003-03-04
申请号：US09595767
申请日：2000-06-16
申请人： Talex Sajoto , Charles Dornfest , Leonid Selyutin , Jun Zhao , Vincent Ku , Xiao Liang Jin
发明人： Talex Sajoto , Charles Dornfest , Leonid Selyutin , Jun Zhao , Vincent Ku , Xiao Liang Jin
IPC分类号： C23C16000
CPC分类号： C23C16/4557 , C23C16/4401 , C23C16/4402 , C23C16/4409 , C23C16/4411 , C23C16/4412 , C23C16/4481 , C23C16/45561 , H01J37/3244 , H01J37/32522 , H01L21/67017 , H01L21/6715
摘要： The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.
摘要翻译：本发明涉及一种用于蒸发液体前体并将膜沉积在合适基底上的装置和方法。一方面，提供了一种用于控制在衬底处理室和系统中流过气体馈通的气体的装置和方法。另一方面，提供沉积室用于沉积需要蒸发的BST和其它材料，特别是低挥发性前体，其作为液体输送到蒸发器以转化为气相，并且必须在升高的温度下运输以防止不必要的冷凝在腔室部件上。该室包括一系列加热的温度控制的内衬，例如加热的气体馈通。

2. 发明授权

US5993916A Method for substrate processing with improved throughput and yield 失效
标题翻译：提高生产量和产量的基板处理方法
公开(公告)号：US5993916A
公开(公告)日：1999-11-30
申请号：US936285
申请日：1997-09-22
申请人： Jun Zhao , Lee Luo , Xiao Liang Jin
发明人： Jun Zhao , Lee Luo , Xiao Liang Jin
IPC分类号： C23C16/44 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/32 , C23C16/34
CPC分类号： C23C16/4411 , C23C16/4412 , C23C16/46 , C23C16/52 , C23C16/56 , H01J37/3244 , H01J37/32834 , H01J2237/2001
摘要： The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides a method of substrate processing. The method includes steps of circulating a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heating a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The method also includes the step of flowing at a flow rate a gas into the chamber to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates. This number is less than twenty-five, in some embodiments, and less than ten in other embodiments. The use of the present invention thus avoids the discarding of the initial hundreds of processed substrates not meeting specifications that is typically experienced with the prior art processes.
摘要翻译：本发明提供了一种方法，其以足够的沉积速率在其上沉积有诸如氮化钛的膜，并且其中膜满足均匀性和电阻率规格以及提供良好的阶梯覆盖，提高了可用基板的数量的增加。根据实施例，本发明提供一种基板处理方法。该方法包括以下步骤：使热交换介质循环通过真空室的室主体中的通道，并且将具有用于支撑基板的表面的加热器基座加热到加热器温度。热交换介质的热交换温度为约60℃以下。该方法还包括以气流流入室中以将膜沉积在基底上的步骤，其中流速提供基底的有效温度低于加热器温度，并且其中膜满足均匀性和阻力规格在沉积到多个基底上之后。在其他实施例中，该数量少于二十五个，在一些实施例中小于十个。因此，本发明的使用避免了丢弃初始数百个处理过的基板，这些基板不符合现有技术工艺通常经历的规格。

3. 发明授权

US5983906A Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment 失效
标题翻译：在高温，腐蚀性等离子体环境中清洗过程的方法和装置
公开(公告)号：US5983906A
公开(公告)日：1999-11-16
申请号：US918665
申请日：1997-08-22
申请人： Jun Zhao , Lee Luo , Jia-Xiang Wang , Xiao Liang Jin , Stefan Wolff , Talex Sajoto , Mei Chang , Paul Frederick Smith
发明人： Jun Zhao , Lee Luo , Jia-Xiang Wang , Xiao Liang Jin , Stefan Wolff , Talex Sajoto , Mei Chang , Paul Frederick Smith
IPC分类号： C23C14/00 , C23C16/44 , C23C16/458 , C23C16/52 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/285 , H01L21/31 , C23F1/00
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/4586 , C23C16/52 , H01J37/32082 , H01J2237/2001 , H01J2237/3321 , Y10S438/905
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

4. 发明授权

US06189482B1 High temperature, high flow rate chemical vapor deposition apparatus and related methods 失效
标题翻译：高温，高流量化学气相沉积装置及相关方法
公开(公告)号：US06189482B1
公开(公告)日：2001-02-20
申请号：US08799415
申请日：1997-02-12
申请人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
发明人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Talex Sajoto , Stefan Wolff , Leonid Selyutin , Ashok Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4412 , C23C16/4586 , C23C16/52 , H01J37/32082 , H01J2237/2001 , H01J2237/3321
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以200埃/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

5. 发明授权

US6051286A High temperature, high deposition rate process and apparatus for depositing titanium layers 失效
标题翻译：高温，高沉积速率工艺和用于沉积钛层的设备
公开(公告)号：US6051286A
公开(公告)日：2000-04-18
申请号：US918706
申请日：1997-08-22
申请人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Stefan Wolff , Talex Sajoto
发明人： Jun Zhao , Lee Luo , Xiao Liang Jin , Jia-Xiang Wang , Stefan Wolff , Talex Sajoto
IPC分类号： C23C16/44 , C23C16/52 , C23C16/08
CPC分类号： H01J37/3244 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/52 , H01J2237/3321
摘要： The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 .ANG./minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400.degree. C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
摘要翻译：本发明提供了用于从四氯化钛源在半导体衬底上以高达200安培/分钟的速率沉积钛膜的系统，方法和装置。根据本发明的实施例，具有用于底部供电RF能力的集成射频平面的陶瓷加热器组件允许在至少400℃的温度下进行PECVD沉积以用于更有效的等离子体处理。热扼流器将加热器与其支撑轴隔离，减少了加热器两端的热梯度，以减少加热器断裂的危险并改善加热器的温度均匀性。沉积系统包括限流器环和其它特征，其允许15升/分钟的流速通过室，具有最小的背侧沉积并且最小化在室底部上的沉积，从而降低室清洁的频率，并且减少清洁时间和调味料。沉积和清洁过程也是本发明的进一步的实施方案。

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