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1. 发明授权

US06299692B1 Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition 失效
标题翻译：用于在化学气相沉积期间将各种前体材料蒸发并流动到半导体晶片上
公开(公告)号：US06299692B1
公开(公告)日：2001-10-09
申请号：US09621335
申请日：2000-07-21
申请人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
发明人： Vincent Ku , Ming Xi , Xiaoxiong Yuan , Anzhong Chang , Anh N. Nguyen
IPC分类号： C23C1600
CPC分类号： C23C16/4485
摘要： A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.
摘要翻译：将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴，纵向腔，输入端和输出端的灯泡状体。空腔具有用于接收蒸发的前体化合物流的开口。存在多个用于蒸汽流过头部的通道，每个通道具有长度和直径。它们相对于从中心轴线到中心轴线的倾斜角度，沿着腔体的周边和周围径向延伸，如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。空腔具有良好的底部，用于捕获前体化合物的任何液滴或颗粒，并防止它们离开头部，除了作为蒸气。多个通道具有足够大的直径，使得在流过头部的蒸气中只有低压降。

2. 发明授权

US06660126B2 Lid assembly for a processing system to facilitate sequential deposition techniques 失效
公开(公告)号：US06660126B2
公开(公告)日：2003-12-09
申请号：US09798251
申请日：2001-03-02
申请人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
发明人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
IPC分类号： H05H100
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4411 , C23C16/452 , H01L21/67017
摘要： A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

3. 发明授权

US06494955B1 Ceramic substrate support 有权
标题翻译：陶瓷基板支撑
公开(公告)号：US06494955B1
公开(公告)日：2002-12-17
申请号：US09596854
申请日：2000-06-19
申请人： Lawrence Chung-Lai Lei , Sal Umotoy , Xiaoxiong Yuan , Anzhong Chang , Hongbee Teoh , Anh N. Nguyen , Ron Rose
发明人： Lawrence Chung-Lai Lei , Sal Umotoy , Xiaoxiong Yuan , Anzhong Chang , Hongbee Teoh , Anh N. Nguyen , Ron Rose
IPC分类号： H01L21205
CPC分类号： C23C16/45521 , C23C16/4581 , C23C16/4586 , H01L21/67017 , H01L21/68721 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792
摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a top ceramic plate having a first side, a bottom ceramic plate having a first side and an embedded electrode, the first side of the bottom plate fused to the first side of the top plate defining a channel therebetween. In another embodiment, a support assembly includes a first plate having a first side and second side. A ring is disposed on the first side. A stepped surface is formed on the first side radially inward of the ring. A second plate is connected to the second side of the first plate.
摘要翻译：提供了一种用于在处理期间支撑基板的基板支撑组件。在一个实施例中，支撑组件包括具有第一侧的顶部陶瓷板，具有第一侧和嵌入电极的底部陶瓷板，底板的与顶板的第一侧熔合的第一侧在其间限定通道。在另一个实施例中，支撑组件包括具有第一侧面和第二侧面的第一板。环设在第一侧。在环的径向内侧的第一侧上形成台阶面。第二板连接到第一板的第二侧。

4. 发明授权

US06734020B2 Valve control system for atomic layer deposition chamber 有权
标题翻译：用于原子层沉积室的阀门控制系统
公开(公告)号：US06734020B2
公开(公告)日：2004-05-11
申请号：US09800881
申请日：2001-03-07
申请人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
发明人： Siqing Lu , Yu Chang , Dongxi Sun , Vinh Dang , Michael X. Yang , Anzhong Chang , Anh N. Nguyen , Ming Xi
IPC分类号： G01N3508
CPC分类号： G05D11/133 , Y10T436/104998 , Y10T436/12
摘要： A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication with the system control computer and operatively coupled to the electrically controlled valves. The refresh time for control of the valves may be less than 10 milliseconds. Consequently, valve control operations do not significantly extend the period of time required for highly repetitive cycling in atomic layer deposition processes. A hardware interlock may be implemented through the output power supply of the programmable logic controller.
摘要翻译：用于半导体处理室的阀门控制系统包括系统控制计算机和与处理室相关联的多个电控阀。该系统还包括与系统控制计算机通信并可操作地耦合到电控阀的可编程逻辑控制器。控制阀的刷新时间可能小于10毫秒。因此，阀门控制操作不会显着延长原子层沉积工艺中高度重复循环所需的时间。可以通过可编程逻辑控制器的输出电源实现硬件互锁。

5. 发明申请

US20110256692A1 MULTIPLE PRECURSOR CONCENTRIC DELIVERY SHOWERHEAD 审中-公开
标题翻译：多款前置式集散式淋浴花洒
公开(公告)号：US20110256692A1
公开(公告)日：2011-10-20
申请号：US12785241
申请日：2010-05-21
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： B05B1/18 , C23C16/45519 , C23C16/45565 , C23C16/52 , C30B25/14 , H01L21/67115
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus provides a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, a plurality of concentric tube assemblies are disposed within the showerhead to separately deliver a first gas from a first gas channel and a second gas from a second gas channel into the processing volume of the chamber. In one embodiment, the showerhead further includes a heat exchanging channel through which the plurality of concentric tube assemblies is disposed.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，该设备提供处理室，其包括具有独立入口和通道的喷头，用于在进入处理容积之前将不同的处理气体输送到室的处理容积而不混合气体。在一个实施例中，多个同心管组件设置在喷头内，以将第一气体从第一气体通道和第二气体从第二气体通道单独输送到腔室的处理容积中。在一个实施例中，喷头还包括热交换通道，多个同心管组件通过该热交换通道设置。

6. 发明申请

US20080099181A1 METHOD TO COOL A BAKE PLATE USING AN ACTIVELY CHILLED TRANSFER SHUTTLE 审中-公开
标题翻译：使用动态冷冻切片切片烘烤烤盘的方法
公开(公告)号：US20080099181A1
公开(公告)日：2008-05-01
申请号：US11691461
申请日：2007-03-26
申请人： Natarajan Ramanan , Jay D. Pinson , Anzhong Chang
发明人： Natarajan Ramanan , Jay D. Pinson , Anzhong Chang
IPC分类号： H01L21/00
CPC分类号： H01L21/67248 , H01L21/67109 , H01L21/67225 , H01L21/67276 , H01L21/67745
摘要： A method of performing a temperature set point change for a bake plate of a track lithography tool includes positioning a cooling surface of an actively chilled transfer shuttle adjacent a process surface of the bake plate. The actively chilled transfer shuttle includes the cooling surface and a transfer surface opposing the cooling surface. The method also includes monitoring a temperature of the bake plate, initiating a flow of a cooling fluid through one or more orifices provided on the cooling surface of the actively chilled transfer shuttle, and determining that the temperature of the bake plate has decreased by a predetermined temperature. The method further includes terminating the flow of the cooling fluid and moving the actively chilled transfer shuttle to a robot transfer position.
摘要翻译：执行轨道光刻工具的烘烤板的温度设定点变化的方法包括将主动冷却的传送梭的冷却表面定位成邻近烘烤板的处理表面。主动冷冻转运梭包括冷却表面和与冷却表面相对的转印表面。该方法还包括监测烘烤板的温度，通过设置在主动冷冻传送梭的冷却表面上的一个或多个孔引发冷却流体的流动，并且确定烘烤板的温度已经降低了预定的温度。该方法还包括终止冷却流体的流动并将主动冷却的运送梭子移动到机器人传送位置。

7. 发明申请

US20050284751A1 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment 审中-公开
标题翻译：在隔离的阳极电解液室中具有对电极的电化学电镀槽
公开(公告)号：US20050284751A1
公开(公告)日：2005-12-29
申请号：US10880103
申请日：2004-06-28
申请人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
发明人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
IPC分类号： C25B9/08 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/22 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A fluid processing cell for depositing a conductive layer onto a substrate is provided. The cell includes a catholyte solution fluid volume positioned to receive a substrate for plating, a first anolyte solution fluid volume at least partially ionically separated from the catholyte solution fluid volume, an anode assembly positioned in the first anolyte solution fluid volume, a second anolyte solution fluid volume, the second anolyte solution fluid volume being electrically isolated from the first anode solution fluid volume and at least partially in ionic communication with the cathode solution fluid volume, and a cathode counter electrode positioned in the second anolyte solution volume.
摘要翻译：提供了一种用于将导电层沉积到基底上的流体处理池。电池包括定位成接收用于电镀的衬底的阴极电解液溶液体积，至少部分与阴极电解液溶液体积离子地分离的第一阳极电解液溶液体积，位于第一阳极电解液溶液体积中的阳极组件，第二阳极电解液流体体积，第二阳极电解液溶液体积与第一阳极溶液流体体积电隔离并且至少部分地与阴极溶液流体体积离子连通，以及位于第二阳极电解液体积中的阴极对电极。

8. 发明授权

US07214297B2 Substrate support element for an electrochemical plating cell 失效
标题翻译：用于电化学电镀单元的基板支撑元件
公开(公告)号：US07214297B2
公开(公告)日：2007-05-08
申请号：US10879668
申请日：2004-06-28
申请人： You Wang , Anzhong Chang , John O. Dukovic
发明人： You Wang , Anzhong Chang , John O. Dukovic
IPC分类号： C25B9/02
CPC分类号： H01L21/6723 , C25D17/001 , C25D17/06
摘要： A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.
摘要翻译：提供了用于电化学电镀系统的接触环。所述接触环包括环形基板支撑构件，从所述基板支撑构件延伸的多个径向定位的导电基板接触销，附接到所述基板支撑构件的环形导电小窃贼元件，以及至少一个与所述基板支撑构件电连通的电力源触针和导电小窃贼元件。

9. 发明申请

US20050284755A1 Substrate support element for an electrochemical plating cell 失效
标题翻译：用于电化学电镀单元的基板支撑元件
公开(公告)号：US20050284755A1
公开(公告)日：2005-12-29
申请号：US10879668
申请日：2004-06-28
申请人： You Wang , Anzhong Chang , John Dukovic
发明人： You Wang , Anzhong Chang , John Dukovic
IPC分类号： C25D5/00 , C25D7/12 , C25D17/06
CPC分类号： H01L21/6723 , C25D17/001 , C25D17/06
摘要： A contact ring for an electrochemical plating system is provided. The contact ring includes an annular substrate supporting member, a plurality of radially positioned conductive substrate contact pins extending from the substrate supporting member, an annular conductive thief element attached to the substrate supporting member, and at least one source of electrical power in electrical communication with the contact pins and the conductive thief element.
摘要翻译：提供了用于电化学电镀系统的接触环。所述接触环包括环形基板支撑构件，从所述基板支撑构件延伸的多个径向定位的导电基板接触销，附接到所述基板支撑构件的环形导电小窃贼元件以及与所述基板支撑构件电连接的至少一个电力源触针和导电小窃贼元件。

10. 发明授权

US10130958B2 Showerhead assembly with gas injection distribution devices 有权
公开(公告)号：US10130958B2
公开(公告)日：2018-11-20
申请号：US12856747
申请日：2010-08-16
申请人： Alexander Tam , Anzhong Chang , Sumedh Acharya
发明人： Alexander Tam , Anzhong Chang , Sumedh Acharya
IPC分类号： C23C16/455 , B05B1/18 , C23C16/52 , C30B25/14 , H01L21/67
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.

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