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1. 发明授权

US5504437A Apparatus and method for electrical measurement of semiconductor wafers 失效
标题翻译：半导体晶片的电气测量装置和方法
公开(公告)号：US5504437A
公开(公告)日：1996-04-02
申请号：US460053
申请日：1995-06-02
申请人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
发明人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
IPC分类号： G01R31/28 , H01L21/66 , H01L21/683 , G01R1/00 , G01R1/04
CPC分类号： H01L22/20 , G01R31/2831
摘要： A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.
摘要翻译：阶段130包括金属基底和在金属基底上形成半导体晶片120的抗金属污染膜。反金属污染膜由选自半导体膜，半导体氧化物膜，半导体氮化物膜，半导体碳化物膜和聚四氟乙烯膜。安装在台架130上的半导体晶片120的后表面与抗金属污染膜直接接触，但不与金属表面接触。不含有简单金属物质的金属防污膜有效地保护半导体晶片120的背面免受金属污染。

2. 发明授权

US5554939A Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same 失效
标题翻译：用于半导体晶片的非破坏性测量传感器及其制造方法
公开(公告)号：US5554939A
公开(公告)日：1996-09-10
申请号：US171026
申请日：1993-12-21
申请人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
发明人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
IPC分类号： G01B11/14 , G01N27/00 , G01R1/07 , G01R27/26 , G01R31/302 , H01L21/66 , G01R31/308
CPC分类号： G01R1/071
摘要： The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.
摘要翻译：本发明提供了一种新型的传感器，优选用于半导体的电气特性的非破坏性测量。该传感器容易制造并且具有足够高的绝缘击穿强度。传感器包括具有形成在锥形玻璃66的底面66a上的电极图案200的电极座64.底面66a具有用于反射激光束的反射面66c，测试电极201和三个平行调节电极 111至113围绕反射平面66c形成。底表面66a还具有设置在测试电极201和平行度调节器电极111至113之间的保护环120.绝缘膜68覆盖锥形玻璃66的下表面。在锥形玻璃的倾斜面66b上形成的接线 66连接到布线上端的外部引线。由于锥形玻璃66具有彼此平行的两个平坦表面，所以通过光刻法容易地在底表面66a上形成电极图案200。绝缘膜68有效地改善介电击穿强度。

3. 发明授权

US5475319A Method of measuring electric charge of semiconductor wafer 失效
标题翻译：测量半导体晶片电荷的方法
公开(公告)号：US5475319A
公开(公告)日：1995-12-12
申请号：US252848
申请日：1994-06-02
申请人： Sadao Hirae , Motohiro Kouno , Hideaki Matsubara
发明人： Sadao Hirae , Motohiro Kouno , Hideaki Matsubara
IPC分类号： G01Q30/00 , G01Q60/12 , G01R29/24 , G01R31/265 , G01R31/312 , H01L21/66 , G01R31/26
CPC分类号： G01R31/312 , G01R29/24 , G01R31/2656 , H01L22/14
摘要： Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.
摘要翻译：通过使用非破坏性测量装置来测量半导体晶片中的电荷量。用非破坏性C-V测量装置测量特定充电过程之前和之后的第一和第二平带电压。在执行充电过程之前和之后也测量测试电极和半导体晶片的表面之间的间隙。根据在进行充电处理之前和之后的间隙和平带电压的测量值来确定靠近半导体晶片表面的电荷。

4. 发明授权

US06278267B1 Method of determining impurity content and apparatus for the same 失效
标题翻译：确定杂质含量的方法及其设备
公开(公告)号：US06278267B1
公开(公告)日：2001-08-21
申请号：US09134584
申请日：1998-08-14
申请人： Hiroshi Okada , Sadao Hirae , Motohiro Kono
发明人： Hiroshi Okada , Sadao Hirae , Motohiro Kono
IPC分类号： G01N2700
CPC分类号： H01L22/12 , G01N2033/0095
摘要： The method obtains a first C-V curve prior to irradiation with light and a second C-V curve after the irradiation with light. The method determines the amount of the intra-film impurity ions in an insulating film in the state prior to the irradiation with light, based on the first and the second C-V curves.
摘要翻译：该方法在用光照射之后获得第一C-V曲线，并在光照射之后获得第二C-V曲线。该方法基于第一和第二C-V曲线确定在照射光之前的状态下的绝缘膜中的膜内杂质离子的量。

5. 发明授权

US07428907B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07428907B2
公开(公告)日：2008-09-30
申请号：US10838926
申请日：2004-05-05
申请人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号： B08B3/02
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译：基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。液体可以是去除液体，中间漂洗液体或去离子水。在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

6. 发明授权

US07267130B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07267130B2
公开(公告)日：2007-09-11
申请号：US10836283
申请日：2004-05-03
申请人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号： B08B3/02
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译：基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。液体可以是去除液体，中间漂洗液体或去离子水。在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

7. 发明授权

US06951221B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US06951221B2
公开(公告)日：2005-10-04
申请号：US09957652
申请日：2001-09-21
申请人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
发明人： Seiichiro Okuda , Hiroaki Sugimoto , Takuya Kuroda , Masanobu Sato , Sadao Hirae , Shuichi Yasuda , Kenya Morinishi , Masayoshi Imai
IPC分类号： B08B1/04 , B08B3/02 , H01L21/00
CPC分类号： H01L21/67046 , B08B1/04 , B08B3/02 , B08B2203/0288 , H01L21/67051 , Y10S134/902
摘要： The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.
摘要翻译：基板处理装置设置有气液混合喷嘴，用于通过混合液体和加压气体来产生处理液雾，以将处理液雾以高速排放到基板。液体可以是去除液体，中间漂洗液体或去离子水。在蚀刻过程中在基板上产生的反应产物随着雾的流动以高速度被去除，从而提高了工艺的质量。

8. 发明授权

US5568252A Method and apparatus for measuring insulation film thickness of semiconductor wafer 失效
标题翻译：用于测量半导体晶片的绝缘膜厚度的方法和装置
公开(公告)号：US5568252A
公开(公告)日：1996-10-22
申请号：US363535
申请日：1994-12-23
申请人： Tatsufumi Kusuda , Motohiro Kouno , Ikuyoshi Nakatani , Sadao Hirae
发明人： Tatsufumi Kusuda , Motohiro Kouno , Ikuyoshi Nakatani , Sadao Hirae
IPC分类号： G01B11/06 , H01L21/66 , G01N21/00
CPC分类号： G01B11/0641 , G01B11/0625 , H01L22/12 , H01L2924/0002
摘要： Reflectance measurement with two monochromatic light beams having different wavelengths is used to obtain curves respective representing the relationship between an insulation film thickness of a semiconductor wafer and the gap between a test electrode and a semiconductor wafer surface. The C-V curve measurement at a fixed gap determines a total capacity of the gap and the insulation film, and a straight line representing the relationship between the gap and the insulation film thickness is obtained from the total capacity. An intersection where the two curves and the straight line cross gives the true values of the gap and the insulation film thickness. Other possible methods include: one for executing the C-V curve measurement and the reflectance measurement with two linear polarized light beams having identical wavelengths but different polarization directions; one for executing the reflectance measurement with three monochromatic light beams that differ in at least wavelength and/or polarization direction; and one for executing the reflectance measurement and the C-V curve measurement for two different gaps.
摘要翻译：使用具有不同波长的两个单色光束的反射率测量来获得各自表示半导体晶片的绝缘膜厚度与测试电极和半导体晶片表面之间的间隙之间的关系的曲线。以固定间隙的C-V曲线测量确定了间隙和绝缘膜的总容量，并且从总容量获得了表示间隙和绝缘膜厚度之间的关系的直线。两条曲线和直线交叉的交叉点给出了间隙和绝缘膜厚度的真实值。其他可能的方法包括：用于使用具有相同波长但不同偏振方向的两个线偏振光进行C-V曲线测量和反射率测量的方法; 一个用于在至少波长和/或偏振方向上不同的三个单色光束执行反射测量; 一个用于执行两个不同间隙的反射率测量和C-V曲线测量。

9. 发明授权

US07600522B2 Substrate treatment method and substrate treatment apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US07600522B2
公开(公告)日：2009-10-13
申请号：US12397632
申请日：2009-03-04
申请人： Masanobu Sato , Sadao Hirae , Shuichi Yasuda
发明人： Masanobu Sato , Sadao Hirae , Shuichi Yasuda
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67051
摘要： A substrate treatment method including the steps of: generating droplets of a treatment liquid by mixing the treatment liquid with a gas; and causing the treatment liquid droplets generated in the liquid droplet generating step to impinge on a surface of a substrate being treated. The treatment liquid droplets have a volume median diameter of 5 μm to 40 μm.
摘要翻译：一种基板处理方法，包括以下步骤：通过将处理液与气体混合来产生处理液的液滴; 并且使得在液滴产生步骤中产生的处理液滴撞击正被处理的基板的表面。处理液滴的体积中值粒径为5〜40μm。

10. 发明授权

US06598805B2 Substrate cleaning apparatus 失效
公开(公告)号：US06598805B2
公开(公告)日：2003-07-29
申请号：US10147243
申请日：2002-05-15
申请人： Takamasa Sakai , Sadao Hirae
发明人： Takamasa Sakai , Sadao Hirae
IPC分类号： B05B124
CPC分类号： H01L21/67051 , B08B3/00 , B08B2230/01 , Y10S134/902
摘要： A gas mixture of dry steam and nitrogen gas serving as carrier gas is blown into a hot water mist injection port for rendering the nitrogen gas serve as a medium absorbing latent heat of condensation, thereby smoothly progressing condensation of water vapor and efficiently forming hot water mist. The water vapor is condensed in the hot water mist injection port formed by a cylindrical pipe for supplying latent heat of condensation to the nitrogen gas and dilating the same, thereby accelerating the flow of the hot water mist and spraying the hot water mist to a substrate from the hot water mist injection port at a high speed. Small droplets contained in the high-speed hot water mist have high kinetic energy and high thermal energy, for exhibiting a large colliding effect and a high activation effect with respect to small contaminants adhering to the substrate. A substrate cleaning apparatus capable of spraying hot water mist attaining a high cleaning effect to a substrate is provided.

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