专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07327947B2 Heat treating apparatus and method 有权
标题翻译：热处理装置及方法
公开(公告)号：US07327947B2
公开(公告)日：2008-02-05
申请号：US11158985
申请日：2005-06-22
申请人： Tatsufumi Kusuda
发明人： Tatsufumi Kusuda
IPC分类号： A21B2/00
CPC分类号： H01L21/67115 , C30B31/12 , H01L21/324
摘要： A heat treating apparatus for heat treating a substrate by irradiating the substrate with light includes a heat treating chamber for receiving the substrate, a heating plate for preheating the substrate through a thermal diffuser plate, xenon flashlamps for heating the substrate preheated by the heating plate, to a treating temperature by irradiating the substrate with flashes of light, and a decompression mechanism for decompressing the heat treating chamber when the xenon flashlamps heat the substrate.
摘要翻译：用于通过用光照射基板来热处理基板的热处理装置包括：用于接收基板的热处理室，用于通过热扩散板预热基板的加热板，用于加热由加热板预热的基板的氙闪光灯，通过用闪光灯照射基板到处理温度，以及当氙闪光灯加热基板时减压热处理室的减压机构。

2. 发明申请

US20050258162A1 Thermal processing apparatus and thermal processing method 有权
标题翻译：热处理设备和热处理方法
公开(公告)号：US20050258162A1
公开(公告)日：2005-11-24
申请号：US11194337
申请日：2005-08-01
申请人： Tatsufumi Kusuda , Yasuhiro Imaoka , Hiromi Murayama , Norio Yamamoto , Naoto Mori , Yoko Yoshihara
发明人： Tatsufumi Kusuda , Yasuhiro Imaoka , Hiromi Murayama , Norio Yamamoto , Naoto Mori , Yoko Yoshihara
IPC分类号： H01L21/00 , F27B5/14 , A21B1/00 , C23C16/00
CPC分类号： H01L21/67248 , F27B17/0025 , F27D5/0037 , F27D19/00 , F27D99/0006 , H01L21/67115
摘要： A light source comprising a plurality of flash lamps emits flashes thereby flash-heating a semiconductor wafer held by a thermal diffuser and a hot plate. The current distance of irradiation between the thermal diffuser and the hot plate holding the semiconductor wafer and the light source is so adjusted as to attain predetermined intensity of irradiation. The distance of irradiation between the thermal diffuser and the hot plate and the light source can be changed or corrected by vertically moving the thermal diffuser and the hot plate. Thus provided is a thermal processing apparatus using the flash lamps, capable of readily controlling the intensity of irradiation.
摘要翻译：包括多个闪光灯的光源发出闪光，从而闪光加热由热漫射器和热板保持的半导体晶片。保持半导体晶片和光源的热扩散器和热板之间的照射距离被调节以达到预定的照射强度。可以通过垂直移动热扩散器和热板来改变或校正热扩散器与热板和光源之间的照射距离。因此，提供了能够容易地控制照射强度的使用闪光灯的热处理装置。

3. 发明授权

US06885815B2 Thermal processing apparatus performing irradiating a substrate with light 有权
标题翻译：用光照射基板的热处理装置
公开(公告)号：US06885815B2
公开(公告)日：2005-04-26
申请号：US10620874
申请日：2003-07-16
申请人： Tatsufumi Kusuda , Yuko Ikumi
发明人： Tatsufumi Kusuda , Yuko Ikumi
IPC分类号： H01L21/00 , F26B19/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A plurality of flash lamps are covered with a reflector. Optical fiber members are attached to the reflector on portions located immediately above the flash lamps. When the flash lamps emit flash light toward a semiconductor wafer, the optical fiber members partially guide the emitted light so that a CCD measures the intensity of light emitted from each of the plurality of flash lamps. A computer detects the emission state of each of the plurality of flash lamps on the basis of a result of measurement. At this time, the computer compares standard luminous intensity obtained when the irradiation state on the semiconductor wafer satisfies a prescribed criterion with the luminous intensity in actual processing for detecting the emission states of the plurality of flash lamps. Thus provided is a thermal processing apparatus capable of reliably and simply detecting deterioration of lamps.
摘要翻译：多个闪光灯被反射器覆盖。光纤构件在紧邻闪光灯的上方的部分附接到反射器。当闪光灯朝向半导体晶片发射闪光时，光纤部件部分地引导发射的光，使得CCD测量从多个闪光灯中的每一个发射的光的强度。计算机基于测量结果检测多个闪光灯中的每一个的发射状态。此时，计算机将当半导体晶片上的照射状态满足规定标准时获得的标准发光强度与用于检测多个闪光灯的发光状态的实际处理中的发光强度进行比较。因此，能够可靠且简单地检测灯的劣化的热处理装置。

4. 发明授权

US5568252A Method and apparatus for measuring insulation film thickness of semiconductor wafer 失效
标题翻译：用于测量半导体晶片的绝缘膜厚度的方法和装置
公开(公告)号：US5568252A
公开(公告)日：1996-10-22
申请号：US363535
申请日：1994-12-23
申请人： Tatsufumi Kusuda , Motohiro Kouno , Ikuyoshi Nakatani , Sadao Hirae
发明人： Tatsufumi Kusuda , Motohiro Kouno , Ikuyoshi Nakatani , Sadao Hirae
IPC分类号： G01B11/06 , H01L21/66 , G01N21/00
CPC分类号： G01B11/0641 , G01B11/0625 , H01L22/12 , H01L2924/0002
摘要： Reflectance measurement with two monochromatic light beams having different wavelengths is used to obtain curves respective representing the relationship between an insulation film thickness of a semiconductor wafer and the gap between a test electrode and a semiconductor wafer surface. The C-V curve measurement at a fixed gap determines a total capacity of the gap and the insulation film, and a straight line representing the relationship between the gap and the insulation film thickness is obtained from the total capacity. An intersection where the two curves and the straight line cross gives the true values of the gap and the insulation film thickness. Other possible methods include: one for executing the C-V curve measurement and the reflectance measurement with two linear polarized light beams having identical wavelengths but different polarization directions; one for executing the reflectance measurement with three monochromatic light beams that differ in at least wavelength and/or polarization direction; and one for executing the reflectance measurement and the C-V curve measurement for two different gaps.
摘要翻译：使用具有不同波长的两个单色光束的反射率测量来获得各自表示半导体晶片的绝缘膜厚度与测试电极和半导体晶片表面之间的间隙之间的关系的曲线。以固定间隙的C-V曲线测量确定了间隙和绝缘膜的总容量，并且从总容量获得了表示间隙和绝缘膜厚度之间的关系的直线。两条曲线和直线交叉的交叉点给出了间隙和绝缘膜厚度的真实值。其他可能的方法包括：用于使用具有相同波长但不同偏振方向的两个线偏振光进行C-V曲线测量和反射率测量的方法; 一个用于在至少波长和/或偏振方向上不同的三个单色光束执行反射测量; 一个用于执行两个不同间隙的反射率测量和C-V曲线测量。

5. 发明授权

US4674860A Image transfer device 失效
标题翻译：影像传输装置
公开(公告)号：US4674860A
公开(公告)日：1987-06-23
申请号：US766770
申请日：1985-08-16
申请人： Hiroshi Tokunaga , Shinobu Soma , Naoki Aoki , Tatsufumi Kusuda
发明人： Hiroshi Tokunaga , Shinobu Soma , Naoki Aoki , Tatsufumi Kusuda
IPC分类号： G03G15/16
CPC分类号： G03G15/167 , G03G15/1695 , G03G2215/0174 , G03G2215/1619 , G03G2215/1657
摘要： An image transfer device which transfers a charged toner carried on an image carrier onto a copying material comprises a transfer drum having a conductive base and an insulating surface, the transfer drum being arranged opposite to the image carrier. An electrical charge is applied to the copying material in advance of the copying material arriving at the insulating surface of the transfer drum. An electrical charge is also provided on the surface of the transfer drum in advance of the copying material arriving at the insulating surface of the transfer drum for attracting the copying material to the surface of the transfer drum and to maintain the attraction by the charges during a copying operation. In place of providing a specified charge on the surface of the transfer drum, a bias voltage can be applied to the conductive base of the transfer drum to provide the attraction force for improving attraction of the copying material to the surface of the transfer drum and to maintain the attraction during a copying operation.
摘要翻译：将承载在图像载体上的带电调色剂转印到复印材料上的图像转印装置包括具有导电基底和绝缘表面的转印鼓，转印鼓布置成与图像载体相对。在复印材料到达转印鼓的绝缘表面之前，向复印材料施加电荷。在复制材料到达转印鼓的绝缘表面之前，还要在转印鼓的表面上提供电荷，以便将复制材料吸引到转印鼓的表面，并且保持在转印鼓的表面处的吸引力复印操作。代替在转鼓的表面上提供指定的电荷，可以将偏压施加到转印鼓的导电基底上，以提供吸引力，以提高复印材料对转印鼓表面的吸引力，以及在复印操作期间保持吸引力。

6. 发明申请

US20140212117A1 HEAT TREATMENT APPARATUS HEATING SUBSTRATE BY IRRADIATION WITH LIGHT 有权
标题翻译：热处理装置加热衬底通过光照辐照
公开(公告)号：US20140212117A1
公开(公告)日：2014-07-31
申请号：US14228380
申请日：2014-03-28
申请人： Tatsufumi Kusuda
发明人： Tatsufumi Kusuda
IPC分类号： H01L21/67 , H01L21/26
CPC分类号： H05B1/0227 , H01L21/26 , H01L21/67115 , H01L21/68742 , H01L21/68785 , H01L2924/0002 , H01L2924/00
摘要： A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.
摘要翻译：电容器，线圈，闪光灯以及诸如IGBT的开关元件串联连接。控制器向开关元件的栅极输出脉冲信号。波形设定器根据输入单元输入的内容设置脉冲信号的波形。在电容器中蓄积的电荷中，脉冲信号被输出到开关元件的栅极，使得闪光灯间歇地发光。施加到开关元件的脉冲信号的波形的变化将改变流过闪光灯的电流的波形，从而改变发光的形式，从而导致半导体晶片的温度分布的变化。

7. 发明授权

US08781309B2 Heat treatment apparatus heating substrate by irradiation with light 有权
标题翻译：热处理装置用光照射加热基板
公开(公告)号：US08781309B2
公开(公告)日：2014-07-15
申请号：US13848526
申请日：2013-03-21
申请人： Tatsufumi Kusuda
发明人： Tatsufumi Kusuda
IPC分类号： F26B3/30 , F26B19/00
CPC分类号： H05B1/0227 , H01L21/26 , H01L21/67115 , H01L21/68742 , H01L21/68785 , H01L2924/0002 , H01L2924/00
摘要： A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer.
摘要翻译：电容器，线圈，闪光灯以及诸如IGBT的开关元件串联连接。控制器向开关元件的栅极输出脉冲信号。波形设定器根据输入单元输入的内容设置脉冲信号的波形。在电容器中蓄积的电荷中，脉冲信号被输出到开关元件的栅极，使得闪光灯间歇地发光。施加到开关元件的脉冲信号的波形的变化将改变流过闪光灯的电流的波形，从而改变发光的形式，从而导致半导体晶片的温度分布的变化。

8. 发明申请

US20120261400A1 HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY IRRADIATION THEREOF WITH LIGHT 审中-公开
标题翻译：热处理装置及其照明加热衬底的方法
公开(公告)号：US20120261400A1
公开(公告)日：2012-10-18
申请号：US13529027
申请日：2012-06-21
申请人： Tatsufumi Kusuda
发明人： Tatsufumi Kusuda
IPC分类号： F27D13/00
CPC分类号： F27B17/0025 , F27D5/0037
摘要： A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer.
摘要翻译：将预热到预热温度的半导体晶片用来自闪光灯的光照射。利用闪光灯的发光，半导体晶片的表面温度在10至100毫秒的时间内保持在恢复温度，以引起硅晶体中产生的缺陷的恢复。然后，随着来自闪光灯的随后的闪光发光，半导体晶片的表面温度将达到处理温度以引起杂质的激活。将半导体晶片的表面温度提高一次至恢复温度，然后随着闪光发光到处理温度也将防止半导体晶片的破裂。

9. 发明授权

US08229290B2 Heat treatment apparatus and method for heating substrate by irradiation thereof with light 有权
标题翻译：热处理装置及其照射用基板加热的方法
公开(公告)号：US08229290B2
公开(公告)日：2012-07-24
申请号：US12209244
申请日：2008-09-12
申请人： Tatsufumi Kusuda
发明人： Tatsufumi Kusuda
IPC分类号： F26B19/00 , A45D20/40
CPC分类号： F27B17/0025 , F27D5/0037
摘要： A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer.
摘要翻译：将预热到预热温度的半导体晶片用来自闪光灯的光照射。利用闪光灯的发光，半导体晶片的表面温度在10至100毫秒的时间内保持在恢复温度，以引起硅晶体中产生的缺陷的恢复。然后，随着来自闪光灯的随后的闪光发光，半导体晶片的表面温度将达到处理温度以引起杂质的激活。将半导体晶片的表面温度提高一次至恢复温度，然后随着闪光发光到处理温度也将防止半导体晶片的破裂。

10. 发明申请

US20120067864A1 HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASHES OF LIGHT 有权
标题翻译：热处理装置通过用闪光灯照射基板来加热基板
公开(公告)号：US20120067864A1
公开(公告)日：2012-03-22
申请号：US13229884
申请日：2011-09-12
申请人： Tatsufumi KUSUDA , Toshiaki AOTANI , Shinji MIYAWAKI
发明人： Tatsufumi KUSUDA , Toshiaki AOTANI , Shinji MIYAWAKI
IPC分类号： H05B1/00
CPC分类号： H01L21/67115
摘要： When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.
摘要翻译：当半导体晶片被卤素灯预热时，半导体晶片的周边部分的温度低于其中心部分的温度。在半导体晶片的中心附近设置的激光发射部分围绕半导体晶片的中心线旋转，同时激光从激光发射部分朝向半导体晶片的周边部分引导。因此，离开激光发射部分的激光的照射点沿着半导体晶片的背面的周边部分旋转以画出圆形轨迹。结果，半导体晶片在较低温度下的整个周边部分被均匀地加热。这实现了半导体晶片的均匀的面内温度分布。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式