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1. 发明授权

US5554939A Non-destructive measuring sensor for semiconductor wafer and method of manufacturing the same 失效
标题翻译：用于半导体晶片的非破坏性测量传感器及其制造方法
公开(公告)号：US5554939A
公开(公告)日：1996-09-10
申请号：US171026
申请日：1993-12-21
申请人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
发明人： Sadao Hirae , Hideaki Matsubara , Motohiro Kouno , Takamasa Sakai
IPC分类号： G01B11/14 , G01N27/00 , G01R1/07 , G01R27/26 , G01R31/302 , H01L21/66 , G01R31/308
CPC分类号： G01R1/071
摘要： The present invention provides a novel sensor preferably used for non-destructive measurement of the electrical characteristics of semiconductors. The sensor is easily manufactured and has a sufficiently high dielectric breakdown strength. The sensor includes an electrode mount 64 having a an electrode pattern 200 formed on a bottom surface 66a of a cone glass 66. The bottom surface 66a has a reflecting plane 66c for reflecting a laser beam, a test electrode 201, and three parallelism adjustor electrodes 111 through 113 formed around the reflecting plane 66c. The bottom surface 66a also has a guard ring 120 disposed between the test electrode 201 and the parallelism adjustor electrodes 111 through 113. An insulating film 68 covers a lower surface of the cone glass 66. Wiring formed on a inclined face 66b of the cone glass 66 is connected to external lead wires at the upper end of the wiring. Since the cone glass 66 has two flat surfaces parallel to each other, the electrode pattern 200 is easily formed on the bottom surface 66a by photo lithography. The insulating film 68 effectively works to improve the dielectric breakdown strength.
摘要翻译：本发明提供了一种新型的传感器，优选用于半导体的电气特性的非破坏性测量。该传感器容易制造并且具有足够高的绝缘击穿强度。传感器包括具有形成在锥形玻璃66的底面66a上的电极图案200的电极座64.底面66a具有用于反射激光束的反射面66c，测试电极201和三个平行调节电极 111至113围绕反射平面66c形成。底表面66a还具有设置在测试电极201和平行度调节器电极111至113之间的保护环120.绝缘膜68覆盖锥形玻璃66的下表面。在锥形玻璃的倾斜面66b上形成的接线 66连接到布线上端的外部引线。由于锥形玻璃66具有彼此平行的两个平坦表面，所以通过光刻法容易地在底表面66a上形成电极图案200。绝缘膜68有效地改善介电击穿强度。

2. 发明授权

US5475319A Method of measuring electric charge of semiconductor wafer 失效
标题翻译：测量半导体晶片电荷的方法
公开(公告)号：US5475319A
公开(公告)日：1995-12-12
申请号：US252848
申请日：1994-06-02
申请人： Sadao Hirae , Motohiro Kouno , Hideaki Matsubara
发明人： Sadao Hirae , Motohiro Kouno , Hideaki Matsubara
IPC分类号： G01Q30/00 , G01Q60/12 , G01R29/24 , G01R31/265 , G01R31/312 , H01L21/66 , G01R31/26
CPC分类号： G01R31/312 , G01R29/24 , G01R31/2656 , H01L22/14
摘要： Amounts of electric charges in a semiconductor wafer are measured by using a non-destructive measuring device. First and second flat-band voltages before and after a specific charging process are measured with a non-destructive C-V measurement device. A gap between a test electrode and a surface of a semiconductor wafer is also measured before and after performing the charging process. The electric charge accumulated proximate the surface of the semiconductor wafer is determined according to measured values of the gap and the flat-band voltages before and after performing the charging process.
摘要翻译：通过使用非破坏性测量装置来测量半导体晶片中的电荷量。用非破坏性C-V测量装置测量特定充电过程之前和之后的第一和第二平带电压。在执行充电过程之前和之后也测量测试电极和半导体晶片的表面之间的间隙。根据在进行充电处理之前和之后的间隙和平带电压的测量值来确定靠近半导体晶片表面的电荷。

3. 发明授权

US5504437A Apparatus and method for electrical measurement of semiconductor wafers 失效
标题翻译：半导体晶片的电气测量装置和方法
公开(公告)号：US5504437A
公开(公告)日：1996-04-02
申请号：US460053
申请日：1995-06-02
申请人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
发明人： Sadao Hirae , Hiroshi Okada , Hideaki Matsubara
IPC分类号： G01R31/28 , H01L21/66 , H01L21/683 , G01R1/00 , G01R1/04
CPC分类号： H01L22/20 , G01R31/2831
摘要： A stage 130 includes a metal base and an anti-metal contamination film formed on the metal base a semi-conductor wafer 120. The anti-metal contamination film is constructed of a material selected from the group consisting of a semi-conductor film, a semi-conductor oxide film, a semi-conductor nitride film, a semi-conductor carbide film, and a polytetrafluoroethylene film. The rear face of the semi-conductor wafer 120 mounted on the stage 130 is in direct contact with the anti-metal contamination film but not with the metal surface. The anti-metal contamination film, which does not contain simple substances of metals, effectively protects the rear face of the semi-conductor wafer 120 from contamination metal.
摘要翻译：阶段130包括金属基底和在金属基底上形成半导体晶片120的抗金属污染膜。反金属污染膜由选自半导体膜，半导体氧化物膜，半导体氮化物膜，半导体碳化物膜和聚四氟乙烯膜。安装在台架130上的半导体晶片120的后表面与抗金属污染膜直接接触，但不与金属表面接触。不含有简单金属物质的金属防污膜有效地保护半导体晶片120的背面免受金属污染。

4. 发明申请

US20070023277A1 PLATING APPARATUS, PLATING CUP AND CATHODE RING 审中-公开
公开(公告)号：US20070023277A1
公开(公告)日：2007-02-01
申请号：US11536211
申请日：2006-09-28
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Masahiro Miyagi , Ryuichi Hayama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Masahiro Miyagi , Ryuichi Hayama
IPC分类号： C25D17/00
CPC分类号： H01L21/2885 , C25D5/003 , C25D5/04 , C25D5/08 , C25D7/123 , C25D17/001 , C25D17/005 , C25D17/06 , C25D17/12 , C25D21/08
摘要： A plating apparatus (10) provided with: a plating vessel (61a to 61d) having a cylindrical side wall (361) for containing a plating liquid; a substrate holding mechanism (74a to 74d) for generally horizontally holding a generally round substrate (W) to be treated; a cathode ring (80) provided in the substrate holding mechanism and having substantially the same inner diameter as the plating vessel for sealing a peripheral edge portion of a lower surface of the substrate, the cathode ring having a cathode (83) to be brought into contact with the substrate held by the substrate holding mechanism; and a rotative driving mechanism (45) for rotating the substrate held by the substrate holding mechanism together with the cathode ring; wherein the plating vessel has an upper edge portion complementary in configuration to a portion of the cathode ring opposed to the plating vessel so that the lower surface of the substrate held by the substrate holding mechanism can approach the plating vessel so as to be substantially flush with the upper edge of the plating vessel without interference between the upper edge portion of the plating vessel and the cathode ring.

5. 发明授权

US07785671B2 Thermal barrier coating system and method of manufacturing the same 有权
标题翻译：热障涂层系统及其制造方法
公开(公告)号：US07785671B2
公开(公告)日：2010-08-31
申请号：US11947413
申请日：2007-11-29
申请人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
发明人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
IPC分类号： C08J7/06 , C23C16/22
CPC分类号： C04B35/486 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C23C14/08 , C23C28/321 , C23C28/3215 , C23C28/3455 , Y02T50/67 , Y10T428/12611
摘要： A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.
摘要翻译：一种隔热涂层系统，包括金属基底，金属结合层和陶瓷热障层，其中所述陶瓷热障层具有包含稳定剂的稳定化氧化锆的柱状结构或含有稳定剂的稳定化的ZrO 2-HfO 2固溶体，含有0.1〜10摩尔％的氧化镧。

6. 发明申请

US20070235341A1 PLATING APPARATUS, CARTRIDGE AND COPPER DISSOLUTION TANK FOR USE IN THE PLATING APPARATUS, AND PLATING METHOD 审中-公开
标题翻译：涂装设备，镀膜及铜罐解决方案用于镀锌装置及镀锌方法
公开(公告)号：US20070235341A1
公开(公告)日：2007-10-11
申请号：US11762962
申请日：2007-06-14
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
IPC分类号： C25D3/38 , C25D17/00
CPC分类号： H01L21/68764 , C23C18/1671 , C23C18/40 , C25D7/123 , C25D17/001 , C25D21/18 , H01L21/2885 , H01L21/6708 , H01L21/67766 , H01L21/68792
摘要： A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed.
摘要翻译：一种电镀设备，具有：三个铜溶解槽，其与电镀液循环路径连接，用于向镀液供应铜离子; 缓冲容器，用于将替换液体供应到不使用的一些铜溶解罐中; 以及未稀释的置换液体供应部分，用于将未稀释的替换液体作为替代液体的源提供到缓冲容器中。通过编织铜线，直铜管或铜板制备的铜网构件作为铜源容纳在每个铜溶解槽中。铜溶解槽各自包括可拆卸的盒，其中布置有铜网构件等。

7. 发明授权

US07279079B2 Plating apparatus, cartridge and copper dissolution tank for use in the plating apparatus, and plating method 失效
标题翻译：电镀装置中使用的电镀装置，滤芯和铜溶解槽以及电镀方法
公开(公告)号：US07279079B2
公开(公告)日：2007-10-09
申请号：US10620728
申请日：2003-07-16
申请人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
发明人： Yasuhiro Mizohata , Hideaki Matsubara , Yoshihiro Koyama
IPC分类号： C25D17/00 , C25D21/18
CPC分类号： H01L21/68764 , C23C18/1671 , C23C18/40 , C25D7/123 , C25D17/001 , C25D21/18 , H01L21/2885 , H01L21/6708 , H01L21/67766 , H01L21/68792
摘要： A plating apparatus provided with: three copper dissolution tanks connected to a plating liquid circulation path for supplying copper ions to a plating liquid; a buffer container for supplying a replacement liquid into some of the copper dissolution tanks not in use; and an undiluted replacement liquid supplying section for supplying an undiluted replacement liquid as a source of the replacement liquid into the buffer container. Copper mesh members each prepared by weaving a copper wire, straight copper pipes or copper plates are accommodated as a copper source in each of the copper dissolution tanks. The copper dissolution tanks each include a detachable cartridge, in which the copper mesh members or the like are disposed.
摘要翻译：一种电镀设备，具有：三个铜溶解槽，其与电镀液循环路径连接，用于向镀液供应铜离子; 缓冲容器，用于将替换液体供应到不使用的一些铜溶解罐中; 以及未稀释的置换液体供应部分，用于将未稀释的替换液体作为替代液体的源提供到缓冲容器中。通过编织铜线，直铜管或铜板制备的铜网构件作为铜源容纳在每个铜溶解槽中。铜溶解槽各自包括可拆卸的盒，其中布置有铜网构件等。

8. 发明申请

US20070221254A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20070221254A1
公开(公告)日：2007-09-27
申请号：US11687934
申请日：2007-03-19
申请人： Akira Izumi , Hideaki Matsubara , Naozumi Fujiwara , Katsuhiko Miya
发明人： Akira Izumi , Hideaki Matsubara , Naozumi Fujiwara , Katsuhiko Miya
IPC分类号： B08B3/00
CPC分类号： H01L21/02041 , H01L21/67051 , H01L21/67057 , H01L21/67109 , H01L21/67309 , H01L21/68742
摘要： Substrates having liquid films with preprocessing liquid on surfaces thereof in a preprocessing unit are transported to a freezing unit arranged separately from the preprocessing unit by a substrate transporting robot. In the freezing unit, the substrates are accommodated in a processing space in a processing chamber and the liquid films are frozen by decreasing the temperature of the processing space to a temperature below the freezing point of the preprocessing unit. Subsequently, the substrates subjected to the freezing process are transported from the freezing unit to a post-processing unit arranged separately from the freezing unit. In the post-processing unit, cleaning liquid is supplied to frozen films, whereby contaminants having adhesive forces to the substrate reduced by the freezing process can be easily removed together with the frozen film.
摘要翻译：在预处理单元中，在其表面具有预处理液体的液膜的基板通过基板传送机器人传送到与预处理单元分开布置的冷冻单元。在冷冻单元中，基板被容纳在处理室中的处理空间中，并且通过将处理空间的温度降低到低于预处理单元的冰点的温度来冻结液膜。随后，经过冷冻处理的基板从冷冻单元传送到与冷冻单元分开设置的后处理单元。在后处理单元中，向冷冻薄膜供给清洗液，能够容易地将与冷冻膜一起减少的粘附力的污染物与冷冻薄膜一起除去。

9. 发明申请

US20060266382A1 Substrate processing method of and substrate processing apparatus for freezing and cleaning substrate 有权
标题翻译：用于冷冻和清洁基板的基板处理方法和基板处理装置
公开(公告)号：US20060266382A1
公开(公告)日：2006-11-30
申请号：US11434322
申请日：2006-05-11
申请人： Hideaki Matsubara
发明人： Hideaki Matsubara
IPC分类号： B08B7/00 , B08B3/00
CPC分类号： B08B3/10 , B08B7/0014 , B08B7/0092 , C03C23/0075 , H01L21/02052 , H01L21/67057 , Y10S134/902
摘要： A substrate immersed in pure water held inside a processing bath disposed to a cleaning unit 1 and accordingly washed, as it bears an aqueous film on its surface, is transported by a substrate transportation mechanism 3 to a spin-processing unit 2. The substrate rotates in the spin-processing unit 2, thereby adjusting the thickness of the aqueous film on the substrate surface. As the aqueous film is then frozen, the volume of the aqueous film expands, adhesion between the substrates and particles adhering to the substrate surface becomes weak, or further the particles are separated from the substrate surface. The substrate transportation mechanism 3 transports thus frozen substrate to the cleaning unit 1 from the spin-processing unit 2, and the substrate is immersed in a processing liquid held inside the processing bath. The overflowing processing liquid thaws and removes the aqueous film, and particles on the substrate surface are discharged outside the substrate.
摘要翻译：浸渍在保持在清洗单元1内的处理槽内的纯水中的基板，由于在其表面承载水性膜而被洗涤的基板通过基板输送机构3输送到旋转处理单元2。基板在旋转处理单元2中旋转，由此调整基板表面上的水性膜的厚度。随着水性膜冷冻，水性膜的体积膨胀，基材和附着于基材表面的颗粒之间的粘合力变弱，或者进一步使颗粒与基材表面分离。基板输送机构3将这样冷冻的基板从旋转处理单元2输送到清洁单元1，并且将基板浸入保持在处理槽内部的处理液中。溢出的处理液解冻并除去水性膜，并且将基板表面上的颗粒排出到基板外部。

10. 发明授权

US07364806B2 Thermal barrier coating system method of manufacturing the same 有权
标题翻译：热障涂层系统制造方法
公开(公告)号：US07364806B2
公开(公告)日：2008-04-29
申请号：US10779309
申请日：2004-02-13
申请人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
发明人： Mineaki Matsumoto , Norio Yamaguchi , Kazushige Kimura , Hideaki Matsubara , Yasuo Matsunaga , Kouichi Matsumoto , Yasuhiro Shigegaki , Takahito Araki
IPC分类号： B32B9/00
CPC分类号： C04B35/486 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C23C14/08 , C23C28/321 , C23C28/3215 , C23C28/3455 , Y02T50/67 , Y10T428/12611
摘要： A thermal barrier coating system comprising a metal substrate, a metal bonding layer and a ceramics thermal barrier layer wherein the ceramics thermal barrier layer has a columnar structure of a stabilized zirconia containing a stabilizer or a stabilized ZrO2—HfO2 solid solution containing a stabilizer, and comprises 0.1 to 10 mol % of lanthanum oxide.
摘要翻译：一种隔热涂层系统，包括金属基底，金属结合层和陶瓷热障层，其中所述陶瓷热障层具有包含稳定剂或稳定的ZrO 2 - 的稳定的氧化锆的柱状结构，含有稳定剂的HfO 2 H 2固溶体，并含有0.1〜10mol％的氧化镧。

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