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1. 发明公开

US20240253093A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20240253093A1
公开(公告)日：2024-08-01
申请号：US18425969
申请日：2024-01-29
申请人： SCREEN Holdings Co., Ltd.
发明人： Koji ANDO , Tomohiro MOTONO , Noritake SUMI
IPC分类号： B08B15/02 , B08B7/00 , H01L21/67
CPC分类号： B08B15/02 , B08B7/0021 , B08B2215/003 , H01L21/67034
摘要： A substrate processing apparatus and a substrate processing system according to the invention includes a processing chamber having a processing space capable of accommodating a substrate inside, being provided with an aperture on a side surface thereof, which communicates with the processing space to cause the substrate to pass therethrough, and being disposed under a downflow environment, a lid part which closes and opens the aperture, a fluid supplier which supplies a heated processing fluid to be used for processing the substrate to the processing space closed by the lid part, and a regulator which guides at least part of an air flowing as the downflow to around the processing chamber and generates an airflow having a uniform flow velocity along an outer surface of the processing chamber.

2. 发明公开

US20240157390A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20240157390A1
公开(公告)日：2024-05-16
申请号：US18509106
申请日：2023-11-14
申请人： SCREEN Holdings Co., Ltd.
发明人： Tomohiro MOTONO , Koji ANDO , Noritake SUMI , Kei SUZUKI
IPC分类号： B05C5/02 , B05D1/26
CPC分类号： B05C5/02 , B05D1/26
摘要： In the substrate processing apparatus, a support tray supporting a substrate is housed in an internal space of a chamber. A processing fluid is supplied into the internal space from one end side of the internal space. The support tray includes a tray member and a plurality of support members attached to the tray member in such a manner as to surround a substrate facing surface. The tray member has a downstream-side standing portion that has a downstream-side standing portion that stands upward further than the substrate facing surface while located in proximity to a peripheral surface of the substrate on a downstream side supported by the plurality of support members. An upper surface of the downstream-side standing portion is below the upper surface of the substrate in a vertical direction supported by the plurality of support members.

3. 发明公开

US20240173754A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20240173754A1
公开(公告)日：2024-05-30
申请号：US18518056
申请日：2023-11-22
申请人： SCREEN Holdings Co., Ltd.
发明人： Kei SUZUKI , Tomohiro MOTONO , Noritake SUMI , Koji ANDO
IPC分类号： B08B7/00 , H01L21/02 , H01L21/67
CPC分类号： B08B7/0021 , H01L21/02101 , H01L21/67034
摘要： A substrate processing apparatus according to the present invention includes a support tray that is configured in such a manner that a residual liquid getting in between a lower surface of a substrate and a substrate facing surface of the support tray is trapped in a groove. The support tray further includes a discharge part through which the residual liquid trapped in the groove is discharged from the groove through a discharge part. As a result, backflow of the residual liquid is prevented effectively, thereby preventing re-adhesion of the residual liquid to the upper surface of the substrate.

4. 发明申请

US20180068875A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180068875A1
公开(公告)日：2018-03-08
申请号：US15691943
申请日：2017-08-31
申请人： SCREEN Holdings Co., Ltd.
发明人： Rei TAKEAKI , Koji ANDO , Tadashi MAEGAWA , Yosuke YASUTAKE
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/67023 , H01L21/67028 , H01L21/67051 , H01L21/683
摘要： A substrate processing apparatus includes: a spin chuck adapted to hold a substrate having a substantially circular outer shape with the principal surface of the substrate set substantially horizontally and rotate the substrate with the center of the substrate as a rotation center; a processing liquid ejection nozzle adapted to eject a processing liquid to the circumferential edge part of the substrate rotated held by the spin chuck; and a cup adapted to be disposed in the external circumferential part of the substrate rotated held by the spin chuck and collect the processing liquid scattered from the substrate, and further includes, above the surface of the substrate rotated held by the spin chuck, an anti-splash member that is disposed between a collision position where the processing liquid scattered from the substrate collides with the cup and the substrate and for preventing the processing liquid having collided with the cup from reaching the surface of the substrate rotated held by the spin chuck.

5. 发明申请

US20200286750A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20200286750A1
公开(公告)日：2020-09-10
申请号：US16879178
申请日：2020-05-20
申请人： SCREEN Holdings Co., Ltd.
发明人： Rei TAKEAKI , Koji ANDO , Tadashi MAEGAWA , Yosuke YASUTAKE
IPC分类号： H01L21/67 , H01L21/687
摘要： A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

6. 发明申请

US20190027383A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20190027383A1
公开(公告)日：2019-01-24
申请号：US16069532
申请日：2017-01-24
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI , Koji ANDO
IPC分类号： H01L21/67 , H01L21/687 , H01L21/02 , B08B3/08 , B08B3/10 , F26B5/08 , C11D7/50
摘要： Pure water, a mixed solution, and an organic solvent are applied to a substrate in this order. The organic solvent is then removed by rotation. The mixed solution is a mixture of pure water and the organic solvent, and has a surface tension lower than that of the pure water. Since the mixed solution has a solubility in pure water, which is higher than that of the organic solvent, local drying on the upper surface becomes less likely at an interface between the mixed solution and the pure water, which suppresses collapse of pattern elements. Since the temperature of the substrate is raised by the mixed solution having a temperature higher than room temperature, it is possible to reduce the time required for a process related to drying.

7. 发明申请

US20230066729A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20230066729A1
公开(公告)日：2023-03-02
申请号：US17894148
申请日：2022-08-23
申请人： SCREEN Holdings Co., Ltd.
发明人： Zhida WANG , Koji ANDO , Noritake SUMI , Chiaki MORIYA , Daiki UEHARA
IPC分类号： H01L21/67 , H01L21/02 , C23C16/455
摘要： This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

8. 发明申请

US20160372340A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20160372340A1
公开(公告)日：2016-12-22
申请号：US15181619
申请日：2016-06-14
申请人： SCREEN Holdings Co., Ltd.
发明人： Rei TAKEAKI , Koji ANDO , Tadashi MAEGAWA , Yosuke YASUTAKE
IPC分类号： H01L21/67 , H01L21/687
摘要： A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.
摘要翻译：衬底处理设备包括衬底保持器，旋转机构，处理液体排出单元和气体放电单元。处理液体排放单元排出处理液体的液体流，使得液体流动与旋转的基板的上表面的周边部分的旋转路径中的着陆位置接触。气体放电单元将上述惰性气体的第一气流从着陆位置上游的第一位置沿旋转路径中的基板的旋转方向排出，将惰性气体的第二气流从上方排出，在旋转路径中基板旋转方向上的第一位置上游的第二位置。第二气流的动能低于第一气流的动能。

9. 发明申请

US20190295861A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190295861A1
公开(公告)日：2019-09-26
申请号：US16440135
申请日：2019-06-13
申请人： SCREEN Holdings Co., Ltd.
发明人： Rei TAKEAKI , Koji ANDO , Tadashi MAEGAWA , Yosuke YASUTAKE
IPC分类号： H01L21/67 , H01L21/687
摘要： A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

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