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1. 发明申请

US20220331845A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220331845A1
公开(公告)日：2022-10-20
申请号：US17851919
申请日：2022-06-28
申请人： SCREEN Holdings Co., Ltd.
发明人： Yukifumi YOSHIDA , Manabu OKUTANI , Hiroshi ABE , Shuichi YASUDA , Yasunori KANEMATSU , Hitoshi NAKAI
IPC分类号： B08B7/00 , B08B3/02 , B08B7/04 , B08B13/00
摘要： A substrate processing method includes a first processing liquid supplying step of supplying a first processing liquid to an upper surface of a substrate, a holding-layer forming step of solidifying or curing the first processing liquid to form a particle holding layer on the upper surface of the substrate, a holding-layer removing step of peeling and removing the particle holding layer from the upper surface of the substrate, a liquid film forming step of forming, after removal of the particle holding layer from the substrate, a liquid film of a second processing liquid, a gas phase layer forming step of forming a gas phase layer for holding the liquid film between the upper surface of the substrate and the liquid film, and a liquid film removing step of removing the second processing liquid from the upper surface of the substrate by moving the liquid film on the gas phase layer.

2. 发明申请

US20180012778A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180012778A1
公开(公告)日：2018-01-11
申请号：US15544459
申请日：2016-01-07
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI
IPC分类号： H01L21/67 , H01L21/306 , H01L21/02 , B08B3/10 , B08B3/08 , H01L21/687 , B08B3/02
摘要： In a substrate processing apparatus, a cup part is moved in an up-down direction to cause a cup exhaust port to selectively overlap a first chamber exhaust port or a second chamber exhaust port. In the state in which the cup exhaust port overlaps the first chamber exhaust port, gas in the cup part is discharged through the cup exhaust port and the first chamber exhaust port by a first exhaust mechanism. In the state in which the cup exhaust port overlaps the second chamber exhaust port, the gas in the cup part is discharged through the cup exhaust port and the second chamber exhaust port by a second exhaust mechanism. In this way, an exhaust mechanism for exhausting gas from the cup part can be easily switched between the first exhaust mechanism and the second exhaust mechanism.

3. 发明申请

US20220189762A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20220189762A1
公开(公告)日：2022-06-16
申请号：US17686471
申请日：2022-03-04
申请人： SCREEN Holdings Co., Ltd.
发明人： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
IPC分类号： H01L21/02 , B08B3/08 , H01L21/67 , B08B3/10
摘要： A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

4. 发明申请

US20190279885A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190279885A1
公开(公告)日：2019-09-12
申请号：US16302375
申请日：2017-05-29
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI
IPC分类号： H01L21/67 , H01L21/306 , B01D3/04 , B01D3/10
摘要： A filler solution is supplied to an upper surface of a substrate, forming a coating that is a film of the filler solution. Clearance in the structure on the upper surface of the substrate is filled with the filler solution. Then, a stripping solution is applied to a peripheral region of the upper surface of the substrate, to strip off a portion of the coating formed on the peripheral region. Also, a gas is injected toward a boundary portion between the peripheral region and an inner region of the upper surface of the substrate, to accelerate solidification of an outer edge portion of the coating formed on the inner region, to suppress the spread of the coating from the inner region to the peripheral region. A substrate holder/rotator, fluid supplies, and a gas injection part are provided to carry out the above process.

5. 发明申请

US20170098538A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20170098538A1
公开(公告)日：2017-04-06
申请号：US15125423
申请日：2015-03-03
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI
IPC分类号： H01L21/02 , B08B11/02 , B08B3/04 , B08B3/08 , H01L21/67 , H01L21/687
CPC分类号： H01L21/02052 , B08B3/041 , B08B3/08 , B08B3/10 , B08B11/02 , C11D11/0047 , H01L21/67051 , H01L21/68764
摘要： A substrate processing apparatus includes a substrate holding part, a substrate rotating mechanism, a processing liquid supply part for supplying a processing liquid onto the substrate, a cup part for receiving the processing liquid spattering from the substrate being rotated, by its inner peripheral surface, a top plate disposed above the substrate, and a liquid film forming part for forming a rotating liquid film which rotates in the same direction as the substrate does, on the inner peripheral surface of the cup part, by supplying a liquid onto an upper surface of the top plate rotating in the same direction as the substrate rotates, in parallel with a processing of the substrate with the processing liquid. It is possible to prevent droplets caused by collision of the processing liquid spattering from the substrate against the cup part from being deposited on the substrate.

6. 发明申请

US20190091736A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190091736A1
公开(公告)日：2019-03-28
申请号：US16136317
申请日：2018-09-20
申请人： SCREEN Holdings Co., Ltd.
发明人： Manabu OKUTANI , Hiroaki TAKAHASHI , Masayuki OTSUJI , Hiroshi ABE , Chikara MAEDA , Hitoshi NAKAI , Yuta SASAKI
IPC分类号： B08B3/08 , H01L21/67 , H01L21/02 , B08B3/10
摘要： A substrate processing method includes a processing liquid film forming step of supplying a processing liquid, containing a sublimable substance, to a pattern forming surface of a substrate, to form a processing liquid film on the pattern forming surface, a temperature maintaining step of maintaining a temperature of the processing liquid film, formed on the pattern forming surface, in a temperature range not lower than a melting point of the sublimable substance and lower than a boiling point of the sublimable substance, a film thinning step of thinning the processing liquid film while the temperature of the processing liquid film is in the temperature range, a freezing step of making the processing liquid film, thinned by the film thinning step, freeze on the pattern forming surface after the temperature maintaining step to form a frozen body of the sublimable substance, and a sublimating step of sublimating the frozen body to remove the frozen body from the pattern forming surface.

7. 发明申请

US20190035650A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20190035650A1
公开(公告)日：2019-01-31
申请号：US16018511
申请日：2018-06-26
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI , Yasunori KANEMATSU
IPC分类号： H01L21/67 , H01L21/687 , H01L21/02
摘要： A substrate processing method includes a substrate holding step of horizontally holding a substrate having a first major surface and a second major surface at an opposite side of the first major surface, a coating film forming step of supplying a coating agent to the first major surface to form a sublimating coating film which covers the first major surface, and a coating film cleaning step of cleaning a front surface of the coating film.

8. 发明申请

US20180301357A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20180301357A1
公开(公告)日：2018-10-18
申请号：US16012170
申请日：2018-06-19
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI , Yasuhiko OHASHI
IPC分类号： H01L21/67 , H01L21/687 , H01L21/02 , B05C11/10 , B08B3/04 , H01L21/306 , B08B11/00 , B05C9/04 , H01L21/00 , B05C5/02
摘要： A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

9. 发明申请

US20170098553A1 SUBSTRATE PROCESSING APPARATUS 有权
公开(公告)号：US20170098553A1
公开(公告)日：2017-04-06
申请号：US15383718
申请日：2016-12-19
申请人： SCREEN Holdings Co., Ltd.
发明人： Hitoshi NAKAI , Yasuhiko OHASHI
IPC分类号： H01L21/67 , H01L21/687 , B08B11/00 , H01L21/02 , B08B3/04 , B05C11/10 , H01L21/306
CPC分类号： H01L21/67023 , B05C5/02 , B05C9/04 , B05C11/1039 , B05C11/1044 , B08B3/041 , B08B11/00 , H01L21/00 , H01L21/02057 , H01L21/30604 , H01L21/67051 , H01L21/6708 , H01L21/67178 , H01L21/68728 , H01L21/68764
摘要： A substrate processing apparatus includes a chamber, a substrate holding part, a substrate rotating mechanism, and a processing liquid supply part. The chamber includes a chamber body and a chamber cover, and the chamber cover is moved up and down by a chamber opening and closing mechanism. A top plate is attached to the chamber cover. While the chamber cover is in contact with the chamber body, a sealed space is formed and processing is performed. When the chamber cover is moved up, an annular opening is formed between the chamber cover and the chamber body. A cup part is positioned outside the annular opening. A processing liquid spattering from a substrate is received by the cup part.

10. 发明申请

US20160329220A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20160329220A1
公开(公告)日：2016-11-10
申请号：US15109921
申请日：2014-12-22
申请人： SCREEN HOLDINGS CO., LTD.
发明人： Hitoshi NAKAI
IPC分类号： H01L21/67 , H01L21/02 , B08B3/10 , H01L21/687
CPC分类号： H01L21/67051 , B08B3/10 , H01L21/67017 , H01L21/67126 , H01L21/6719 , H01L21/68742
摘要： In a substrate processing apparatus, a chamber bottom has a plurality of large chamber exhaust ports arranged in a circumferential direction. A cup rotation mechanism rotates a cup part so that a cup exhaust port selectively overlaps with one of the large chamber exhaust ports. With the cup exhaust port overlapping with one large chamber exhaust port, the gas in the cup part is discharged to the outside of the chamber via a first exhaust mechanism. With the cup exhaust port overlapping with another large chamber exhaust port, the gas in cup part is discharged to the outside of the chamber via a second exhaust mechanism. By rotating the cup part in the chamber via the cup rotation mechanism, the substrate processing apparatus can easily switch the exhaust mechanism for exhausting gas from the cup part.
摘要翻译：在基板处理装置中，室底部具有沿圆周方向排列的多个大室排气口。杯子旋转机构使杯部旋转，使得杯排出口选择性地与大室排气口中的一个重叠。在杯排气口与一个大室排气口重叠的同时，杯部分中的气体经由第一排气机构排出到室外。当杯排气口与另一个大的排气口重叠时，杯部分的气体经由第二排气机构排出到室的外部。通过经由杯旋转机构旋转室内的杯部，基板处理装置可以容易地切换用于从杯部排出气体的排气机构。

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