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1. 发明授权

US09115287B2 Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same 有权
标题翻译：用于制造氧化物半导体的组合物及使用其制造薄膜晶体管基板的方法
公开(公告)号：US09115287B2
公开(公告)日：2015-08-25
申请号：US13670120
申请日：2012-11-06
申请人： Samsung Display Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
发明人： Yeon-Taek Jeong , Bo-Sung Kim , Doo-Hyoung Lee , Doo-Na Kim , Eun-Hye Park , Dong-Lim Kim , Hyun-Jae Kim , You-Seung Rim , Hyun-Soo Lim
IPC分类号： H01L21/00 , C09D5/00 , H01L29/66 , C04B35/453 , H01L29/24 , H01L29/786 , H01L27/12 , H01L29/22 , C04B35/01 , C04B35/457 , C04B35/622
CPC分类号： C09D5/00 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/62222 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/443 , C04B2235/444 , C04B2235/449 , H01L27/1225 , H01L29/22 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.
摘要翻译：根据制造薄膜晶体管基板的方法，涂覆包含草酸金属盐和用于制造氧化物半导体的溶剂的组合物以形成薄膜，对薄膜进行退火，并将薄膜图案化以形成半导体模式。

2. 发明授权

US09136342B2 Thin film transistor and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09136342B2
公开(公告)日：2015-09-15
申请号：US14495835
申请日：2014-09-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yeon Taek Jeong , Bo Sung Kim , Doo-Hyoung Lee , June Whan Choi , Tae-Young Choi , Kano Masataka
IPC分类号： H01L29/76 , H01L29/423 , H01L29/51 , H01L29/49 , H01L29/786
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/51 , H01L29/512 , H01L29/786 , H01L2029/42388
摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.
摘要翻译：提供薄膜晶体管。根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料并且第二材料具有不同的碳和硅原子数比。

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