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1. 发明授权

US09082795B2 Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor 有权
标题翻译：包含氧化物半导体的氧化物半导体和薄膜晶体管衬底的前体组成
公开(公告)号：US09082795B2
公开(公告)日：2015-07-14
申请号：US14477587
申请日：2014-09-04
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Chan Woo Yang , Seung-Ho Jung , Doo Na Kim , Bo Sung Kim , Eun Hye Park , June Whan Choi
IPC分类号： H01L29/786 , H01L21/336 , H01L29/66 , H01B1/06 , H01L21/02
CPC分类号： H01L29/66969 , H01B1/06 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100）对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R⁡[mol·⁢％] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。

2. 发明授权

US09455276B2 Thin film transistor array panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09455276B2
公开(公告)日：2016-09-27
申请号：US14456154
申请日：2014-08-11
申请人： Samsung Display Co., Ltd.
发明人： Hee Jun Byeon , Seung Sok Son , Bo Sung Kim , Yeon Taek Jeong
IPC分类号： H01L27/12 , G02F1/1362 , G02F1/1343
CPC分类号： H01L27/124 , G02F1/134363 , G02F1/136227 , H01L27/1259
摘要： A thin film transistor array panel includes: a substrate; a gate line and a common voltage line on the substrate and electrically separated from each other; a gate insulating layer on the gate line and the common voltage line; a first passivation layer on the gate insulating layer; a common electrode on the first passivation layer; a second passivation layer on the common electrode; and a pixel electrode and a connecting member on the second passivation layer and electrically separated from each other. A first contact hole and a second contact hole are defined in the first and second passivation layers. The pixel electrode and the drain electrode are connected to each other through the second contact hole. The connecting member and the common electrode are connected to each other through the first contact hole.
摘要翻译：薄膜晶体管阵列面板包括：基板; 栅极线和公共电压线，并且彼此电分离; 栅极线和公共电压线上的栅极绝缘层; 栅极绝缘层上的第一钝化层; 在第一钝化层上的公共电极; 公共电极上的第二钝化层; 以及第二钝化层上的像素电极和连接构件，并且彼此电分离。在第一钝化层和第二钝化层中限定第一接触孔和第二接触孔。像素电极和漏极通过第二接触孔相互连接。连接构件和公共电极通过第一接触孔彼此连接。

3. 发明授权

US09136342B2 Thin film transistor and manufacturing method thereof 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09136342B2
公开(公告)日：2015-09-15
申请号：US14495835
申请日：2014-09-24
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Yeon Taek Jeong , Bo Sung Kim , Doo-Hyoung Lee , June Whan Choi , Tae-Young Choi , Kano Masataka
IPC分类号： H01L29/76 , H01L29/423 , H01L29/51 , H01L29/49 , H01L29/786
CPC分类号： H01L29/42384 , H01L29/4908 , H01L29/51 , H01L29/512 , H01L29/786 , H01L2029/42388
摘要： A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a semiconductor layer disposed on the substrate and including at least a portion overlapping the gate electrode; a gate insulating layer disposed between the gate line and the semiconductor layer; and a source electrode and a drain electrode disposed on the substrate and facing each other over a channel region of the semiconductor layer. The gate insulating layer includes a first region and a second region, the first region corresponds to the channel region of the semiconductor layer, the first region is made of a first material, the second region is made of a second material, and the first material and the second material have different atomic number ratios of carbon and silicon.
摘要翻译：提供薄膜晶体管。根据本发明的示例性实施例的薄膜晶体管包括：基板; 栅极线，设置在所述基板上并且包括栅电极; 半导体层，设置在所述基板上，并且至少包括与所述栅电极重叠的部分; 设置在所述栅极线和所述半导体层之间的栅极绝缘层; 以及设置在所述基板上并且在所述半导体层的沟道区域上彼此面对的源电极和漏电极。栅极绝缘层包括第一区域和第二区域，第一区域对应于半导体层的沟道区域，第一区域由第一材料制成，第二区域由第二材料制成，第一材料并且第二材料具有不同的碳和硅原子数比。

4. 发明授权

US09823531B2 Thin film transistor array panel, manufacturing method thereof, and display device including the thin film transistor array panel 有权
公开(公告)号：US09823531B2
公开(公告)日：2017-11-21
申请号：US14277526
申请日：2014-05-14
申请人： Samsung Display Co., Ltd.
发明人： Tae-Young Choi , Bo Sung Kim , Jae Woo Park , Hee Jun Byeon , Young-Wook Lee , Moon-Keun Choi
IPC分类号： G02F1/1362 , H01L27/12 , H01L27/02
CPC分类号： G02F1/136286 , G02F1/136204 , H01L27/0288 , H01L27/124
摘要： A thin film transistor array panel includes: gate lines; data lines insulated from and crossing the gate lines; and shorting bars disposed outside of a display area in which the gate lines cross the data lines. The shorting bars overlap portions of the data lines disposed outside of the display area. The shorting bar includes a semiconductor material.

5. 发明授权

US09285638B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US09285638B2
公开(公告)日：2016-03-15
申请号：US14313470
申请日：2014-06-24
申请人： Samsung Display Co., Ltd.
发明人： Dong Il Seo , Bo Sung Kim , Kye Hun Lee
IPC分类号： G02F1/1343 , G02F1/1362
CPC分类号： G02F1/134309 , G02F1/134363 , G02F1/136213 , G02F2001/134372 , G02F2001/136222
摘要： A liquid crystal display comprising: a substrate; a plurality of common voltage lines disposed on the substrate; an insulating layer disposed on the common voltage lines; and a common electrode and a plurality of pixel electrodes disposed on the insulating layer, the plurality of pixel electrodes constituting a plurality of pixel electrodes, respectively, wherein the insulating layer comprises a plurality of contact holes to expose at least part of the common voltage lines, and wherein two adjacent contact holes among the plurality of contact holes are spaced apart by at least one pixel therebetween.
摘要翻译：一种液晶显示器，包括：基板; 设置在所述基板上的多个公共电压线; 设置在公共电压线上的绝缘层; 以及配置在所述绝缘层上的公共电极和多个像素电极，所述多个像素电极分别构成多个像素电极，其中所述绝缘层包括多个接触孔，以暴露所述公共电压线的至少一部分并且其中所述多个接触孔中的两个相邻的接触孔在其间隔开至少一个像素。

6. 发明申请

US20150044817A1 THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US20150044817A1
公开(公告)日：2015-02-12
申请号：US14521043
申请日：2014-10-22
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Wood Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L29/66 , H01L21/477 , H01L21/441 , H01L21/02 , H01L21/385
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

7. 发明授权

US09406785B2 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US09406785B2
公开(公告)日：2016-08-02
申请号：US14521043
申请日：2014-10-22
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Woo Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L21/441 , H01L21/02 , H01L21/385 , H01L29/66 , H01L29/786 , H01L21/477
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

8. 发明申请

US20150036090A1 LIQUID CRYSTAL DISPLAY 有权
标题翻译：液晶显示器
公开(公告)号：US20150036090A1
公开(公告)日：2015-02-05
申请号：US14313470
申请日：2014-06-24
申请人： Samsung Display Co., Ltd .
发明人： Dong Il SEO , Bo Sung Kim , Kye Hun Lee
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134309 , G02F1/134363 , G02F1/136213 , G02F2001/134372 , G02F2001/136222
摘要： A liquid crystal display comprising: a substrate; a plurality of common voltage lines disposed on the substrate; an insulating layer disposed on the common voltage lines; and a common electrode and a plurality of pixel electrodes disposed on the insulating layer, the plurality of pixel electrodes constituting a plurality of pixel electrodes, respectively, wherein the insulating layer comprises a plurality of contact holes to expose at least part of the common voltage lines, and wherein two adjacent contact holes among the plurality of contact holes are spaced apart by at least one pixel therebetween.
摘要翻译：一种液晶显示器，包括：基板; 设置在所述基板上的多个公共电压线; 设置在公共电压线上的绝缘层; 以及配置在所述绝缘层上的公共电极和多个像素电极，所述多个像素电极分别构成多个像素电极，其中所述绝缘层包括多个接触孔，以暴露所述公共电压线的至少一部分并且其中所述多个接触孔中的两个相邻的接触孔在其间隔开至少一个像素。

9. 发明授权

US08895977B2 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US08895977B2
公开(公告)日：2014-11-25
申请号：US13673195
申请日：2012-11-09
申请人： Samsung Display Co., Ltd.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Woo Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L21/786 , H01L29/786 , H01L21/385
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

10. 发明授权

US08853687B2 Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor 有权
标题翻译：包含氧化物半导体的氧化物半导体和薄膜晶体管衬底的前体组成
公开(公告)号：US08853687B2
公开(公告)日：2014-10-07
申请号：US13679910
申请日：2012-11-16
申请人： Samsung Display Co., Ltd.
发明人： Doo Hyoung Lee , Chan Woo Yang , Seung-Ho Jung , Doo Na Kim , Bo Sung Kim , Eun Hye Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/66 , H01B1/06
CPC分类号： H01L29/66969 , H01B1/06 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio (R, ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] / 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100）对于半导体层中的金属，铟（In）的含量小于约20％，更具体地，摩尔比（R，（R，R⁡[mol⁢％] = [In] [In + Zn + Sn 半导体层中的金属的In（In）的比例为约5％〜13％。

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