专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09515093B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US09515093B2
公开(公告)日：2016-12-06
申请号：US14466317
申请日：2014-08-22
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Zhu Xun , Jae Woo Park , Jae Won Song , Keum Hee Lee , June Whan Choi
IPC分类号： H01L29/12 , H01L29/10 , H01L27/12 , H01L29/417 , H01L21/443 , H01L29/45 , H01L29/66 , H01L29/786 , H01L21/768 , H01L23/532
CPC分类号： H01L27/124 , G02F1/133512 , G02F1/133514 , G02F1/1368 , G02F2001/133519 , G02F2201/121 , G02F2201/123 , H01L21/443 , H01L21/76852 , H01L23/53238 , H01L27/1225 , H01L27/1259 , H01L27/127 , H01L27/1288 , H01L29/41733 , H01L29/458 , H01L29/66765 , H01L29/78618 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal silicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.
摘要翻译：如下提供薄膜晶体管阵列面板。栅电极设置在基板上。半导体层设置在栅电极上。栅极绝缘层设置在栅电极和半导体层之间。源电极设置在半导体层的第一侧上，具有第一侧表面。漏电极设置在半导体层的第二侧上，具有第二侧表面。第一和第二侧表面限定了与栅电极重叠的间隔。金属硅化物层设置在第一和第二侧表面上。在金属硅化物层，源电极和漏电极上设置钝化层。钝化层不与第一和第二侧表面接触。

2. 发明申请

US20150044817A1 THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US20150044817A1
公开(公告)日：2015-02-12
申请号：US14521043
申请日：2014-10-22
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Wood Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L29/66 , H01L21/477 , H01L21/441 , H01L21/02 , H01L21/385
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

3. 发明授权

US11133370B2 Organic light emitting diode display device and manufacturing method thereof 有权
公开(公告)号：US11133370B2
公开(公告)日：2021-09-28
申请号：US16742449
申请日：2020-01-14
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Kap Soo Yoon , Chan Woo Yang , June Whan Choi
IPC分类号： H01L27/14 , H01L27/32 , H01L51/52 , H01L51/56 , H01L51/00
摘要： An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

4. 发明授权

US09082795B2 Precursor composition of oxide semiconductor and thin film transistor substrate including oxide semiconductor 有权
标题翻译：包含氧化物半导体的氧化物半导体和薄膜晶体管衬底的前体组成
公开(公告)号：US09082795B2
公开(公告)日：2015-07-14
申请号：US14477587
申请日：2014-09-04
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Chan Woo Yang , Seung-Ho Jung , Doo Na Kim , Bo Sung Kim , Eun Hye Park , June Whan Choi
IPC分类号： H01L29/786 , H01L21/336 , H01L29/66 , H01B1/06 , H01L21/02
CPC分类号： H01L29/66969 , H01B1/06 , H01L21/02565 , H01L21/02628 , H01L29/7869
摘要： A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio ( R , R ⁡ [ mol ⁢ ⁢ % ] = [ In ] [ In + Zn + Sn ] × 100 ) of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管基板包括：半导体层，包括设置在绝缘基板上的金属，与半导体层重叠的栅极电极以及与半导体层重叠的源电极和漏电极，其中金属在半导体层中包含铟（In），锌（Zn）和锡（Sn），摩尔比（R，R⁡[mol⁢％] = [In] [In + Zn + Sn]×100）对于半导体层中的金属，铟（In）的含量小于约20％，更具体地说，摩尔比（R，R⁡[mol·⁢％] = [In] [In + Zn + Sn]×100 ）的半导体层中的金属的In（In）为约5％至约13％。

5. 发明授权

US12113058B2 Display device with a static electricity discharging circuit 有权
公开(公告)号：US12113058B2
公开(公告)日：2024-10-08
申请号：US17215682
申请日：2021-03-29
申请人： Samsung Display Co., LTD.
发明人： Kang Moon Jo , An Su Lee , June Whan Choi
IPC分类号： H01L27/02
CPC分类号： H01L27/0255 , H01L27/0292 , H01L27/0288 , H01L27/0296
摘要： A display device includes a substrate including a display area and a non-display area; a semiconductor layer including a source area, a channel area, and a drain area and disposed in the non-display area of the substrate; a gate electrode overlapping the channel area of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the channel area of the semiconductor layer; a source electrode electrically connected to the source area of the semiconductor layer; and a drain electrode electrically connected to the drain area of the semiconductor layer, wherein a lateral side of the gate electrode overlaps the drain electrode.

6. 发明授权

US11825712B2 Organic light emitting diode display device and manufacturing method of an organic light emitting diode display device 有权
公开(公告)号：US11825712B2
公开(公告)日：2023-11-21
申请号：US17446036
申请日：2021-08-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Kap Soo Yoon , Chan Woo Yang , June Whan Choi
IPC分类号： H01L21/00 , H10K59/131 , H10K50/818 , H10K50/844 , H10K59/38 , H10K59/123 , H10K59/126 , H10K71/00 , H10K59/12 , H10K102/00 , H10K102/10
CPC分类号： H10K59/131 , H10K50/818 , H10K50/844 , H10K59/123 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201 , H10K71/621 , H10K2102/00 , H10K2102/103 , H10K2102/351
摘要： An organic light emitting diode display includes a substrate including a display area and a pad area, a first thin film transistor disposed on the display area, an organic light emitting diode connected to the first thin film transistor, a pad electrode disposed on the pad area and a pad contact electrode disposed on an upper portion of the pad electrode and electrically connected to the pad electrode. The organic light emitting diode includes an anode, an organic emission layer, and a cathode. The anode includes a lower layer, an intermediate layer, and an upper layer. The pad contact electrode is formed of a material of the lower layer of the anode.

7. 发明授权

US11943976B2 Display device 有权
公开(公告)号：US11943976B2
公开(公告)日：2024-03-26
申请号：US16892988
申请日：2020-06-04
申请人： Samsung Display Co., LTD.
发明人： Seung Sok Son , Woo Geun Lee , Seul Ki Kim , Kap Soo Yoon , Hyun Woong Baek , Jae Hyun Lee , Su Jung Jung , Jung Kyoung Cho , Seung Ha Choi , June Whan Choi
IPC分类号： G02F1/1362 , G09G3/32 , H10K59/121 , H10K59/131 , H10K59/38 , H10K59/12
CPC分类号： H10K59/131 , G09G3/32 , G09G2300/0426 , G09G2310/0202 , H10K59/1201
摘要： A display device includes a substrate, a first conductive layer on the substrate, the first conductive layer including a data signal line, a first insulating layer on the first conductive layer, a semiconductor layer on the first insulating layer, the semiconductor layer including a first semiconductor pattern, a second insulating layer on the semiconductor layer, and a second conductive layer on the second insulating layer, the second conductive layer including a gate electrode disposed to overlap the first semiconductor pattern, a transistor first electrode disposed to overlap a part of the first semiconductor pattern, wherein the transistor first electrode is electrically connected to the data signal line through a contact hole that penetrates the first and second insulating layers, and a transistor second electrode disposed to overlap another part of the first semiconductor pattern.

8. 发明授权

US09406785B2 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US09406785B2
公开(公告)日：2016-08-02
申请号：US14521043
申请日：2014-10-22
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Woo Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L21/441 , H01L21/02 , H01L21/385 , H01L29/66 , H01L29/786 , H01L21/477
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

9. 发明授权

US08895977B2 Thin film transistor and method of forming the same 有权
标题翻译：薄膜晶体管及其形成方法
公开(公告)号：US08895977B2
公开(公告)日：2014-11-25
申请号：US13673195
申请日：2012-11-09
申请人： Samsung Display Co., Ltd.
发明人： Doo Hyoung Lee , Bo Sung Kim , Chan Woo Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L21/786 , H01L29/786 , H01L21/385
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.
摘要翻译：薄膜晶体管包括衬底，设置在衬底上的氧化物半导体层，与氧化物半导体层重叠的栅电极，设置在氧化物半导体层和栅电极之间的栅极绝缘层，以及源极电极和与氧化物半导体层至少部分重叠并且彼此间隔开的漏电极。栅极绝缘层包括包含第一材料的氧化物。氧化物半导体层包括与第一材料相同的材料和第二材料的氧化物，源电极和漏极包括包含与第二材料相同的材料的氧化物和第三材料，以及晶界不形成在栅极绝缘层和氧化物半导体层中的至少一个之间或氧化物半导体层以及源电极和漏电极之间的界面上。

10. 发明申请

US20130320327A1 THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME 有权
公开(公告)号：US20130320327A1
公开(公告)日：2013-12-05
申请号：US13673195
申请日：2012-11-09
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Doo Hyoung LEE , Bo Sung Kim , Chan Woo Yang , Seung-Ho Jung , Yeon Taek Jeong , June Whan Choi , Tae-Young Choi
IPC分类号： H01L29/786 , H01L21/385
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/02614 , H01L21/385 , H01L21/441 , H01L21/477 , H01L29/7869
摘要： A thin film transistor includes a substrate, an oxide semiconductor layer that is disposed on the substrate, a gate electrode that overlaps with the oxide semiconductor layer, a gate insulating layer that is disposed between the oxide semiconductor layer and the gate electrode, and a source electrode and a drain electrode that at least partially overlap with the oxide semiconductor layer and are spaced from each other. The gate insulating layer includes an oxide including a first material. The oxide semiconductor layer includes an oxide which includes a same material as the first material and a second material, and the source electrode and the drain electrode include an oxide that includes a same material as the second material and a third material, and a grain boundary is not formed on an interface between at least one of the gate insulating layer and the oxide semiconductor layer or between the oxide semiconductor layer, and the source electrode and the drain electrode.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式