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1. 发明授权

US09443939B2 Strain compensated REO buffer for III-N on silicon 有权
标题翻译：用于硅上III-N的应变补偿REO缓冲器
公开(公告)号：US09443939B2
公开(公告)日：2016-09-13
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

2. 发明申请

US20130099357A1 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON 审中-公开
标题翻译：用于III-N在硅中的应变补偿选择缓冲器
公开(公告)号：US20130099357A1
公开(公告)日：2013-04-25
申请号：US13278952
申请日：2011-10-21
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L21/20 , H01L29/06 , H01L29/20
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

3. 发明申请

US20130248853A1 NUCLEATION OF III-N ON REO TEMPLATES 有权
标题翻译： III-N在REO模板上的核化
公开(公告)号：US20130248853A1
公开(公告)日：2013-09-26
申请号：US13845426
申请日：2013-03-18
申请人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
IPC分类号： H01L29/20
CPC分类号： H01L21/02192 , H01L21/02247 , H01L21/02252 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
摘要翻译：在硅衬底上制造单晶III-N材料层的方法包括在硅衬底上外延生长REO模板。该模板包括与衬底相邻的REO层，晶体间距基本上与衬底的晶格间距相匹配，并被选择以保护衬底免受氮化。在模板的上表面附近形成稀土氮氧化物或稀土氮化物，并且在其上外延生长单晶III-N材料层。

4. 发明申请

US20160133708A1 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON 有权
公开(公告)号：US20160133708A1
公开(公告)日：2016-05-12
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

5. 发明授权

US08846504B1 GaN on Si(100) substrate using epi-twist 有权
标题翻译： Si（100）衬底上的GaN
公开(公告)号：US08846504B1
公开(公告)日：2014-09-30
申请号：US14075032
申请日：2013-11-08
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Radek Roucka
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Radek Roucka
IPC分类号： H01L21/20 , C30B23/00 , H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02609
摘要： A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
摘要翻译：在硅衬底上生长GaN材料的方法包括提供具有（100）表面取向的单晶硅衬底或具有高达10°偏移表面取向的（100），并且使用外延生长单晶应力管理层在硅衬底上。单晶应力管理层包括具有（110）晶体取向的稀土氧化物和立方晶体结构。该方法还包括在应力管理层上外延生长单晶缓冲层。单晶缓冲层包括稀土氧化物，其晶格间距比应力管理层的稀土氧化物更接近GaN的晶格间距。在缓冲液表面上外延生长一层单晶GaN材料，该GaN材料具有（11-20）晶体取向和（0001）晶体取向之一。

6. 发明授权

US09142406B1 III-N material grown on ErAlN buffer on Si substrate 有权
标题翻译：在Si衬底上在ErAlN缓冲液上生长的III-N材料
公开(公告)号：US09142406B1
公开(公告)日：2015-09-22
申请号：US14269011
申请日：2014-05-02
申请人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Nam Pham , Erdem Arkun
IPC分类号： H01L21/20 , H01L21/02 , H01L29/20 , H01L29/205
CPC分类号： H01L21/0251 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/0254
摘要： III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
摘要翻译：在包括单晶硅或单晶蓝宝石中的一种的衬底上的缓冲器上生长的III-N材料。包括ErxAl1-xN或（RE1yRE21-y）xAl1-xN中的一种的单晶合金缓冲液位于基板上。一层单晶III-N材料位于缓冲层的表面上，单晶合金具有与单晶III-N材料层基本晶格匹配的晶格常数。当III-N材料为GaN时，合金配方中的x从衬底附近的小于1变化到大于或等于与单晶GaN层相邻的0.249。

7. 发明申请

US20150069409A1 HETEROSTRUCTURE WITH CARRIER CONCENTRATION ENHANCED BY SINGLE CRYSTAL REO INDUCED STRAINS 有权
标题翻译：单晶诱导应激增强载体浓度的结构
公开(公告)号：US20150069409A1
公开(公告)日：2015-03-12
申请号：US14487820
申请日：2014-09-16
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun
IPC分类号： H01L29/778 , H01L29/66 , H01L21/02 , H01L29/205 , H01L29/20
CPC分类号： H01L29/7783 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/02516 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.
摘要翻译：在硅衬底上生长的异质结构包括位于硅衬底上的单晶稀土氧化物模板，该模板基本上与硅衬底的表面晶格匹配。异质结构位于模板上并且在III-N层和III-III-N层之间的界面处限定至少一个异质结。模板和异质结构被晶体匹配以在至少一个异质结处诱导工程化的预定拉伸应变。在异质结构上生长单晶稀土氧化物电介质层，以在单晶稀土氧化物介电层中引起工程化的预定压应力，并在III-III-N层中引起拉伸应变。 III-III-N层中的拉伸应变和REO层中的压应力组合以诱导压电场，导致异质结中2DEG中的较高载流子浓度。

8. 发明申请

US20140225123A1 REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON 审中-公开
标题翻译： REO / ALO / AlN模板用于III-N材料在硅上的生长
公开(公告)号：US20140225123A1
公开(公告)日：2014-08-14
申请号：US14180079
申请日：2014-02-13
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/46 , H01L33/32 , H01L33/00
CPC分类号： H01L33/46 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A III-N template formed on a silicon substrate includes a Distributed Bragg Reflector positioned on the silicon substrate. The Distributed Bragg Reflector is substantially crystal lattice matched to the surface of the silicon substrate. An aluminum oxide layer is positioned on the surface of the Distributed Bragg Reflector and substantially crystal lattice matched to the surface of the Distributed Bragg Reflector. A layer of aluminum nitride (AlN) is positioned on the surface of the aluminum oxide layer and substantially crystal lattice matched to the surface of the aluminum oxide layer. A III-N LED structure including at least one III-N layer can then be grown on the aluminum nitride layer and substantially crystal lattice matched to the surface of the aluminum nitride layer.
摘要翻译：形成在硅衬底上的III-N模板包括位于硅衬底上的分布式布拉格反射器。分布布拉格反射器与硅衬底的表面基本上晶格匹配。一个氧化铝层位于分布式布拉格反射体的表面上，并且基本上与分布式布拉格反射器表面匹配的晶格。一层氮化铝（AlN）位于氧化铝层的表面上，并且与氧化铝层的表面基本上晶格匹配。然后可以在氮化铝层上生长包括至少一个III-N层的III-N LED结构，并且基本上与氮化铝层的表面匹配的晶格。

9. 发明申请

US20160181093A1 III-N EPITAXY ON MULTILAYER BUFFER WITH PROTECTIVE TOP LAYER 审中-公开
标题翻译：具有保护顶层的多层缓冲层的III-N外延
公开(公告)号：US20160181093A1
公开(公告)日：2016-06-23
申请号：US14576500
申请日：2014-12-19
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Nam Pham
IPC分类号： H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02439 , H01L21/02483 , H01L21/02505 , H01L21/02516 , H01L21/0254
摘要： A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
摘要翻译：一种在硅衬底上生长III-N材料的方法，包括以下步骤：在硅衬底上外延生长REO材料的缓冲层，在衬底的表面上外延生长REN材料层，并外延生长薄的保护层的REO在REN材料层的表面上。底物和结构可以方便地转移到另一种生长机器中，其中进行以下步骤：将REO保护层原位转化或修饰为具有氮处理的REN层，并在其上外延生长III-N材料层改性保护层。

10. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

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