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    • 10. 发明授权
    • IR sensor using REO up-conversion
    • IR传感器采用REO上转换
    • US08664735B2
    • 2014-03-04
    • US13053285
    • 2011-03-22
    • Erdem ArkunRytis DargisAndrew ClarkDavid L. Williams
    • Erdem ArkunRytis DargisAndrew ClarkDavid L. Williams
    • H01L31/0232H01L31/055
    • H01L31/02322G01J1/58G01J5/20H01L31/02327H01L31/103Y02E10/52
    • A pumped sensor system includes a substrate with a first layer formed thereon and doped for a first type conduction and a second layer doped for a second type conduction, whereby the first and second layers form a silicon light detector at an up-conversion wavelength. A ternary rare earth oxide is formed on the second layer and crystal lattice matched to the second layer. The oxide is a crystalline bulk oxide with a controlled percentage of an up-conversion component and a majority component. The majority component is insensitive to any of pump, sense, or up-conversion wavelengths and the up-conversion component is selected to produce energy at the up-conversion wavelength in response to receiving energy at the pump and sense wavelengths. The layer of oxide defines a light input area sensitive to a pump wavelength and a light input area sensitive to a sense wavelength.
    • 泵送传感器系统包括其上形成有第一层并且被掺杂用于第一类型传导的第一层和掺杂用于第二类型传导的第二层的衬底,由此第一和第二层以上转换波长形成硅光检测器。 在第二层上形成三元稀土氧化物,并且与第二层匹配的晶格。 氧化物是具有受控百分比的上转换组分和多数组分的结晶体氧化物。 大多数组件对泵,感测或上转换波长中的任何一个不敏感,并且上转换组件被选择为响应于在泵处的接收能量和感测波长而在上转换波长处产生能量。 氧化物层限定对泵浦波长敏感的光输入区域和对感测波长敏感的光输入区域。