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1. 发明授权

US09443939B2 Strain compensated REO buffer for III-N on silicon 有权
标题翻译：用于硅上III-N的应变补偿REO缓冲器
公开(公告)号：US09443939B2
公开(公告)日：2016-09-13
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

2. 发明申请

US20130099357A1 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON 审中-公开
标题翻译：用于III-N在硅中的应变补偿选择缓冲器
公开(公告)号：US20130099357A1
公开(公告)日：2013-04-25
申请号：US13278952
申请日：2011-10-21
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L21/20 , H01L29/06 , H01L29/20
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
摘要翻译：一种在硅晶片上制造稀土氧化物缓冲III-N的方法，包括提供晶体硅衬底，在包括一层或多层单晶稀土氧化物的硅衬底上沉积稀土氧化物结构，以及沉积单层在稀土氧化物结构上形成晶体III-N材料，以形成稀土氧化物结构和单晶III-N材料层之间的界面。单晶III-N材料层在界面处产生拉伸应力，并且稀土氧化物结构在界面处具有取决于稀土氧化物结构的厚度的压应力。生长稀土氧化物结构的厚度足以提供压缩应力，以抵消界面处的拉伸应力的至少一部分，从而基本上减少晶片中的弯曲。

3. 发明申请

US20130248853A1 NUCLEATION OF III-N ON REO TEMPLATES 有权
标题翻译： III-N在REO模板上的核化
公开(公告)号：US20130248853A1
公开(公告)日：2013-09-26
申请号：US13845426
申请日：2013-03-18
申请人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
发明人： Erdem Arkun , Andrew Clark , Rytis Dargis , Radek Roucka , Michael Lebby
IPC分类号： H01L29/20
CPC分类号： H01L21/02192 , H01L21/02247 , H01L21/02252 , H01L21/02381 , H01L21/02439 , H01L21/02458 , H01L21/02483 , H01L21/02488 , H01L21/02502 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
摘要翻译：在硅衬底上制造单晶III-N材料层的方法包括在硅衬底上外延生长REO模板。该模板包括与衬底相邻的REO层，晶体间距基本上与衬底的晶格间距相匹配，并被选择以保护衬底免受氮化。在模板的上表面附近形成稀土氮氧化物或稀土氮化物，并且在其上外延生长单晶III-N材料层。

4. 发明申请

US20160133708A1 STRAIN COMPENSATED REO BUFFER FOR III-N ON SILICON 有权
公开(公告)号：US20160133708A1
公开(公告)日：2016-05-12
申请号：US14924047
申请日：2015-10-27
申请人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
发明人： Rytis Dargis , Erdem Arkun , Radek Roucka , Andrew Clark , Michael Lebby
IPC分类号： H01L29/20 , H01L29/06 , H01L29/16
CPC分类号： H01L29/2003 , H01L21/02381 , H01L21/02439 , H01L21/02488 , H01L21/02532 , H01L21/0254 , H01L29/0657 , H01L29/16
摘要： A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.

5. 发明授权

US08846504B1 GaN on Si(100) substrate using epi-twist 有权
标题翻译： Si（100）衬底上的GaN
公开(公告)号：US08846504B1
公开(公告)日：2014-09-30
申请号：US14075032
申请日：2013-11-08
申请人： Rytis Dargis , Andrew Clark , Erdem Arkun , Radek Roucka
发明人： Rytis Dargis , Andrew Clark , Erdem Arkun , Radek Roucka
IPC分类号： H01L21/20 , C30B23/00 , H01L21/02
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02433 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02609
摘要： A method of growing GaN material on a silicon substrate includes providing a single crystal silicon substrate with a (100) surface orientation or a (100) with up to a 10° offset surface orientation and using epi-twist technology, epitaxially growing a single crystal stress managing layer on the silicon substrate. The single crystal stress managing layer includes rare earth oxide with a (110) crystal orientation and a cubic crystal structure. The method further includes epitaxially growing a single crystal buffer layer on the stress managing layer. The single crystal buffer layer includes rare earth oxide with a lattice spacing closer to a lattice spacing of GaN than the rare earth oxide of the stress managing layer. Epitaxially growing a layer of single crystal GaN material on the surface of the buffer, the GaN material having one of a (11-20) crystal orientation and a (0001) crystal orientation.
摘要翻译：在硅衬底上生长GaN材料的方法包括提供具有（100）表面取向的单晶硅衬底或具有高达10°偏移表面取向的（100），并且使用外延生长单晶应力管理层在硅衬底上。单晶应力管理层包括具有（110）晶体取向的稀土氧化物和立方晶体结构。该方法还包括在应力管理层上外延生长单晶缓冲层。单晶缓冲层包括稀土氧化物，其晶格间距比应力管理层的稀土氧化物更接近GaN的晶格间距。在缓冲液表面上外延生长一层单晶GaN材料，该GaN材料具有（11-20）晶体取向和（0001）晶体取向之一。

6. 发明申请

US20140225123A1 REO/ALO/AlN TEMPLATE FOR III-N MATERIAL GROWTH ON SILICON 审中-公开
标题翻译： REO / ALO / AlN模板用于III-N材料在硅上的生长
公开(公告)号：US20140225123A1
公开(公告)日：2014-08-14
申请号：US14180079
申请日：2014-02-13
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/46 , H01L33/32 , H01L33/00
CPC分类号： H01L33/46 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02505 , H01L21/0251 , H01L21/0254 , H01L29/1075 , H01L29/2003 , H01L29/66462 , H01L29/7786 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A III-N template formed on a silicon substrate includes a Distributed Bragg Reflector positioned on the silicon substrate. The Distributed Bragg Reflector is substantially crystal lattice matched to the surface of the silicon substrate. An aluminum oxide layer is positioned on the surface of the Distributed Bragg Reflector and substantially crystal lattice matched to the surface of the Distributed Bragg Reflector. A layer of aluminum nitride (AlN) is positioned on the surface of the aluminum oxide layer and substantially crystal lattice matched to the surface of the aluminum oxide layer. A III-N LED structure including at least one III-N layer can then be grown on the aluminum nitride layer and substantially crystal lattice matched to the surface of the aluminum nitride layer.
摘要翻译：形成在硅衬底上的III-N模板包括位于硅衬底上的分布式布拉格反射器。分布布拉格反射器与硅衬底的表面基本上晶格匹配。一个氧化铝层位于分布式布拉格反射体的表面上，并且基本上与分布式布拉格反射器表面匹配的晶格。一层氮化铝（AlN）位于氧化铝层的表面上，并且与氧化铝层的表面基本上晶格匹配。然后可以在氮化铝层上生长包括至少一个III-N层的III-N LED结构，并且基本上与氮化铝层的表面匹配的晶格。

7. 发明授权

US08835955B2 IIIOxNy on single crystal SOI substrate and III n growth platform 有权
标题翻译： IIIOxNy在单晶SOI衬底和IIIn生长平台上
公开(公告)号：US08835955B2
公开(公告)日：2014-09-16
申请号：US13221474
申请日：2011-08-30
申请人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
发明人： Erdem Arkun , Rytis Dargis , Andrew Clark , Michael Lebby
IPC分类号： H01L33/60 , H01L29/786 , H01L33/00 , H01L29/78 , H01L21/762 , H01L21/02 , H01L33/12 , H01L33/46
CPC分类号： H01L21/76248 , H01L21/02381 , H01L21/02483 , H01L21/02488 , H01L21/02507 , H01L21/02532 , H01L29/7842 , H01L29/78603 , H01L33/007 , H01L33/12 , H01L33/46
摘要： A silicon-on-insulator (SOI) substrate structure and method of fabrication including a single crystal silicon substrate, a layer of single crystal rare earth oxide formed on the substrate, a layer of engineered single crystal silicon formed on the layer of single crystal rare earth oxide, and a single crystal insulator layer of IIIOxNy formed on the engineered single crystal silicon layer. In some embodiments the III material in the insulator layer includes more than on III material. In a preferred embodiment the single crystal rare earth oxide includes Gd2O3 and the single crystal insulator layer of IIIOxNy includes one of AlOxNy and AlGaOxNy.
摘要翻译：一种绝缘体上硅（SOI）衬底结构及其制造方法，包括单晶硅衬底，在衬底上形成的单晶稀土氧化物层，在单晶稀土层上形成的工程化单晶硅层在工程化的单晶硅层上形成IIIOxNy的单晶绝缘体层。在一些实施例中，绝缘体层中的III材料包括多于III族材料。在优选的实施方案中，单晶稀土氧化物包括Gd 2 O 3，并且IIIO x N y的单晶绝缘体层包括AlO x N y和AlGaO x N y之一。

8. 发明申请

US20140231818A1 AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE 有权
标题翻译： GaN / REO /硅衬底结构上的AlN电极
公开(公告)号：US20140231818A1
公开(公告)日：2014-08-21
申请号：US13772169
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L21/02 , H01L29/20
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶稀土氧化物层。稀土氧化物与硅衬底的表面基本上晶格匹配。第一层III-N材料位于稀土氧化物层的表面上。氮化铝（AlN）的层间位于III-N材料的第一层的表面上，并且在氮化铝层间的表面上设置附加的III-N层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。在最终的III-N层上生长AlN的覆盖层，并且在AlN覆盖层上生长具有LED结构和HEMT结构之一的III-N层材料。

9. 发明申请

US20140231817A1 III-N MATERIAL GROWN ON ALO/ALN BUFFER ON SI SUBSTRATE 有权
标题翻译： III-N材料在基板上的ALO / ALN缓冲器上
公开(公告)号：US20140231817A1
公开(公告)日：2014-08-21
申请号：US13772126
申请日：2013-02-20
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L29/205 , H01L21/02
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/0254 , H01L29/155 , H01L29/2003 , H01L29/778
摘要： III-N material grown on a silicon substrate includes a single crystal buffer positioned on a silicon substrate. The buffer is substantially crystal lattice matched to the surface of the silicon substrate and includes aluminum oxynitride adjacent the substrate and aluminum nitride adjacent the upper surface. A first layer of III-N material is positioned on the upper surface of the buffer. An inter-layer of aluminum nitride (AlN) is positioned on the first III-N layer and an additional layer of III-N material is positioned on the inter-layer. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的III-N材料包括位于硅衬底上的单晶缓冲器。缓冲器基本上与硅衬底的表面晶格匹配，并且包括邻近衬底的氮氧化铝和与上表面相邻的氮化铝。第一层III-N材料位于缓冲器的上表面上。氮化铝（AlN）的层间位于第一III-N层上，并且在层之间设置附加的III-N材料层。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

10. 发明授权

US08680507B1 A1N inter-layers in III-N material grown on DBR/silicon substrate 失效
标题翻译：在DBR /硅衬底上生长的III-N材料中的AlN层间
公开(公告)号：US08680507B1
公开(公告)日：2014-03-25
申请号：US13742612
申请日：2013-01-16
申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
发明人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
IPC分类号： H01L33/10 , H01L33/12 , H01L29/778
CPC分类号： H01L33/007 , H01L29/155 , H01L29/2003 , H01L29/7787 , H01L33/10 , H01L33/12 , H01L33/32
摘要： A DBR/gallium nitride/aluminum nitride base grown on a silicon substrate includes a Distributed Bragg Reflector (DBR) positioned on the silicon substrate. The DBR is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the DBR, an inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer.
摘要翻译：在硅衬底上生长的DBR /氮化镓/氮化铝基底包括位于硅衬底上的分布式布拉格反射器（DBR）。 DBR基本上与硅衬底的表面晶格匹配。第一层III-N材料位于DBR的表面上，氮化铝层（AlN）的层间位于III-N材料的第一层的表面上，并且附加的III-N材料层位于氮化铝层间的表面上。氮化铝层和III-N材料的附加层重复n次，以减少或设计最终III-N层的应变。

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