会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • alpha-SIALON, LIGHT-EMITTING DEVICE AND USE THEREOF
    • 阿赛隆,发光装置及其用途
    • US20130293093A1
    • 2013-11-07
    • US13981286
    • 2011-11-30
    • Ryozo NonogakiTomohiro NomiyamaMitsuru KawagoeSuzuya Yamada
    • Ryozo NonogakiTomohiro NomiyamaMitsuru KawagoeSuzuya Yamada
    • H05B33/14H05B33/12
    • H05B33/14C09K11/0883C09K11/7734H01L33/502H01L2224/48091H01L2224/48247H01L2224/8592H01L2924/181H05B33/12Y10T428/2982H01L2924/00014H01L2924/00012
    • Provided are an α-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The α-SiAlON is represented by the general formula: (M)x(Eu)y(Si)12−(m+n)(Al)m+n(O)n(N)16−n (wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an α-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the α-SiAlON is 5 μm or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the α-SiAlON is preferably 0.56 or more. A light-emitting device 10 includes a light-emitting light source 12 and a wavelength conversion member 15, wherein the wavelength conversion member 15 includes a α-SiAlON 18 for absorbing near-ultraviolet to blue light generated by the light-emitting light source 12 to generate yellow to orange light.
    • 提供了由Eu激活的α-SiAlON,其可以在诸如白色LED的发光装置以及发光装置中实现更高的亮度。 α-SiAlON由以下通式表示:(M)x(Eu)y(Si)12-(m + n)(Al)m + n(O)n(N)16-n(其中M表示一 或更多的元素,其至少包括选自Li,Mg,Ca,Y和镧系元素(La和Ce除外)的Ca)),并且由具有固溶体形式的Eu的α-SiAlON构成 。 α-SiAlON的一次颗粒的平均面积直径的50%为5umum以上,一次粒子的50%平均面积直径与α-SiAlON二次粒子的平均面积直径的比值优选为 0.56以上。 发光装置10包括发光光源12和波长转换构件15,其中波长转换构件15包括用于吸收由发光光源12产生的近紫外至蓝光的α-SiAlON 18 产生黄色到橙色的光。
    • 5. 发明授权
    • Electron source having a tungsten single crystal electrode
    • 具有钨单晶电极的电子源
    • US08593048B2
    • 2013-11-26
    • US13695625
    • 2010-11-30
    • Ryozo NonogakiToshiyuki Morishita
    • Ryozo NonogakiToshiyuki Morishita
    • H01J1/304
    • H01J1/15H01J1/304H01J37/06H01J2237/06316
    • Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
    • 提供了即使在低提取电压下也允许高角度电流密度操作并且减少导致真空劣化的过电流的电子源。 以及使用该电子源的电子装置。 电子源具有由单晶钨组成的阴极和设置在阴极的中间部分的扩散源。 在阴极中,调节阴极的轴向和阴极的<100>取向之间的角度,使得从形成在阴极顶端的表面和表面之间的边界附近发射的电子基本上被发射 平行于阴极的轴线。 电子设备设有电子源。
    • 6. 发明申请
    • ELECTRON SOURCE
    • 电子源
    • US20130049568A1
    • 2013-02-28
    • US13695625
    • 2010-11-30
    • Ryozo NonogakiToshiyuki Morishita
    • Ryozo NonogakiToshiyuki Morishita
    • H01J1/304
    • H01J1/15H01J1/304H01J37/06H01J2237/06316
    • Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
    • 提供了即使在低提取电压下也允许高角度电流密度操作并且减少导致真空劣化的过电流的电子源。 以及使用该电子源的电子装置。 电子源具有由单晶钨组成的阴极和设置在阴极的中间部分的扩散源。 在阴极中,调节阴极的轴向和阴极的<100>取向之间的角度,使得从形成在阴极顶端的表面和表面之间的边界附近发射的电子基本上被发射 平行于阴极的轴线。 电子设备设有电子源。
    • 8. 发明授权
    • Electron source
    • 电子源
    • US08040034B2
    • 2011-10-18
    • US12667762
    • 2008-06-19
    • Ryozo NonogakiYoshinori Terui
    • Ryozo NonogakiYoshinori Terui
    • H01J1/16
    • H01J37/28H01J1/15H01J37/06H01J37/065H01J37/073H01J2237/061H01J2237/06316
    • An electron source producing an electron beam which is highly reliable and stable even when it is externally oscillated. The electron source comprises a cathode (1) having an electron emitting section which is so connected to be interposed between top ends of two filaments (3) which are respectively connected to two conductive pins (4) provided on an insulator member (5), an end of the cathode (1) which differs from the electron emitting section being fixed to the insulator member (5), wherein the two filaments (3) are being twofold symmetry with a center on a center axis of the cathode (1), and preferably, the end of the cathode (1) which differs from the electron emitting section is fixed to the insulator member (5) via a metallic member (6) brazed to the insulator member, and more preferably, a curved portion is provided to the filaments.
    • 产生电子束的电子源即使在外部振荡时也是高度可靠和稳定的。 电子源包括具有电子发射部分的阴极(1),该电子发射部分被连接以分别连接到设置在绝缘体部件(5)上的两个导电针(4)的两根细丝(3)的顶端之间, 阴极(1)的与电子发射部分不同的端部固定到绝缘体部件(5),其中两根细丝(3)与阴极(1)的中心轴线上的中心是双重对称的, 并且优选地,与电子发射部分不同的阴极(1)的端部通过钎焊到绝缘体构件的金属构件(6)固定到绝缘体构件(5),更优选地,弯曲部分 长丝。