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    • 1. 发明授权
    • Electron source having a tungsten single crystal electrode
    • 具有钨单晶电极的电子源
    • US08593048B2
    • 2013-11-26
    • US13695625
    • 2010-11-30
    • Ryozo NonogakiToshiyuki Morishita
    • Ryozo NonogakiToshiyuki Morishita
    • H01J1/304
    • H01J1/15H01J1/304H01J37/06H01J2237/06316
    • Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
    • 提供了即使在低提取电压下也允许高角度电流密度操作并且减少导致真空劣化的过电流的电子源。 以及使用该电子源的电子装置。 电子源具有由单晶钨组成的阴极和设置在阴极的中间部分的扩散源。 在阴极中,调节阴极的轴向和阴极的<100>取向之间的角度,使得从形成在阴极顶端的表面和表面之间的边界附近发射的电子基本上被发射 平行于阴极的轴线。 电子设备设有电子源。
    • 2. 发明申请
    • ELECTRON SOURCE
    • 电子源
    • US20130049568A1
    • 2013-02-28
    • US13695625
    • 2010-11-30
    • Ryozo NonogakiToshiyuki Morishita
    • Ryozo NonogakiToshiyuki Morishita
    • H01J1/304
    • H01J1/15H01J1/304H01J37/06H01J2237/06316
    • Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.
    • 提供了即使在低提取电压下也允许高角度电流密度操作并且减少导致真空劣化的过电流的电子源。 以及使用该电子源的电子装置。 电子源具有由单晶钨组成的阴极和设置在阴极的中间部分的扩散源。 在阴极中,调节阴极的轴向和阴极的<100>取向之间的角度,使得从形成在阴极顶端的表面和表面之间的边界附近发射的电子基本上被发射 平行于阴极的轴线。 电子设备设有电子源。
    • 9. 发明授权
    • External combustion engine
    • 外燃机
    • US07493751B2
    • 2009-02-24
    • US11717794
    • 2007-03-13
    • Shuzo OdaShinichi YatsuzukaKatsuya KomakiShunji OkemotoToshiyuki Morishita
    • Shuzo OdaShinichi YatsuzukaKatsuya KomakiShunji OkemotoToshiyuki Morishita
    • F02C5/00
    • F01K11/00
    • An external combustion engine is disclosed, comprising a container (11) for sealing a working liquid (12) in a way adapted to allow the liquid to flow therein, a heater (13) for heating and vaporizing the working liquid (12) in the container (11), and a cooler (14) for cooling and liquefying the vapor of the working liquid (12) heated and vaporized by the heater (13). The displacement of the working liquid (12) caused by the volume change of the vapor of the working liquid (12) is output by being converted into mechanical energy. In the heated portion (11d) of the container (11) for vaporizing the working liquid (12), the direction of displacement of the working liquid (12) at the parts (17, 19) far from the cooler (14) is changed with respect to the direction of displacement at the part (16) near to the cooler (14).
    • 公开了一种外燃机,包括用于以适于允许液体在其中流动的方式密封工作液体(12)的容器(11),用于加热和蒸发工作液体(12)的加热器(13) 容器(11)和用于冷却和液化由加热器(13)加热和蒸发的工作液体(12)的蒸气的冷却器(14)。 由工作液体(12)的蒸汽的体积变化引起的工作液体(12)的位移通过转换为机械能而被输出。 在用于蒸发工作液体(12)的容器(11)的加热部分(11d)中,改变远离冷却器(14)的部分(17,19)处的工作液体(12)的位移方向被改变 相对于靠近冷却器(14)的部分(16)处的位移方向。
    • 10. 发明申请
    • Silicon carbide semiconductor device
    • 碳化硅半导体器件
    • US20080224150A1
    • 2008-09-18
    • US12073837
    • 2008-03-11
    • Naohiro SuzukiTsuyoshi YamamotoToshiyuki Morishita
    • Naohiro SuzukiTsuyoshi YamamotoToshiyuki Morishita
    • H01L29/24
    • H01L29/66068H01L21/0465H01L29/0615H01L29/063H01L29/0638H01L29/1608H01L29/45H01L29/7828
    • The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion.
    • SiC半导体器件包括由碳化硅制成的第一导电类型的衬底,由碳化硅制成的第一导电类型的漂移层,漂移层比衬底掺杂少,由衬底的一部分构成的单元部分 以及漂移层的一部分,由基板的另一部分和漂移层的另一部分构成的圆周部分,周向部分形成为围绕电池部分,以及形成在第二导电类型的RESURF层 漂移层的表面部分,以便位于圆周部分中。 RESURF层由具有不同杂质浓度的第一和第二RESURF层构成,第二RESURF层与第一RESURF层的外周接触并延伸到电池单元的周围。