专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09393748B2 Direct blow-molded container manufacturing method and package 有权
标题翻译：直接吹塑容器制造方法和包装
公开(公告)号：US09393748B2
公开(公告)日：2016-07-19
申请号：US14129423
申请日：2012-06-12
申请人： Ryoji Otaki , Kenji Kouno , Hiroshi Kobayashi
发明人： Ryoji Otaki , Kenji Kouno , Hiroshi Kobayashi
IPC分类号： B29D22/00 , B29C47/20 , B29C47/70 , B65D1/00 , B29C47/00 , B29C49/04 , B29L31/00 , B29K77/00
CPC分类号： B29D22/003 , B29C47/0023 , B29C47/20 , B29C47/705 , B29C49/04 , B29K2077/00 , B29K2995/0067 , B29K2995/0069 , B29L2031/715 , B29L2031/7158 , B29L2031/7172 , B65D1/00
摘要： The present invention provides a method of manufacturing a practical direct-blow molded container having excellent barrier property against fuels, chemicals, various gases including oxygen. The method of manufacturing a practical direct-blow molded container containing the metaxylylene group-containing polyamide (C) being dispersed and layered in the polyolefin (A) includes using a die provided with a die body having a flow hole in which the melted resin extruded from an extruder flows and a cylindrical hollow having an opening in the lower side and the flow hole in the upper side, the opening and the flow hole opening downward and upward, respectively, a mandrel having a tip in the upper side, the tip pointing to the opening of the tip of the flow hole, a flow path clearance formed between the hollow of the die body and the mandrel, the flow path clearance defining a resin flow path, and a support part formed in the flow path clearance, the support part holding the mandrel in the hollow of the die body.
摘要翻译：本发明提供一种制造实用的直吹式成型容器的方法，该容器对燃料，化学品，包括氧的各种气体具有优异的阻隔性。含有含聚亚甲基基团的聚酰胺（C）的实施例的直吹式成型容器的制造方法包括使用具有流动孔的模具的模具，其中熔融树脂挤出从挤出机流出的圆筒形中空部和具有下侧开口部和上侧流动孔的圆筒状的中空部分，开口部和流动孔分别向下方开口，具有上侧的尖端的芯棒，到流动孔的尖端的开口，形成在模具本体的中空部和心轴之间的流路间隙，限定树脂流路的流路间隙和形成在流路间隙中的支撑部，支撑体将心轴保持在模具本体的中空部分中。

2. 发明申请

US20140183092A1 DIRECT BLOW-MOLDED CONTAINER MANUFACTURING METHOD AND PACKAGE 有权
标题翻译：直接吹塑容器制造方法和包装
公开(公告)号：US20140183092A1
公开(公告)日：2014-07-03
申请号：US14129423
申请日：2012-06-12
申请人： Ryoji Otaki , Kenji Kouno , Hiroshi Kobayashi
发明人： Ryoji Otaki , Kenji Kouno , Hiroshi Kobayashi
IPC分类号： B29D22/00 , B65D1/00
CPC分类号： B29D22/003 , B29C47/0023 , B29C47/20 , B29C47/705 , B29C49/04 , B29K2077/00 , B29K2995/0067 , B29K2995/0069 , B29L2031/715 , B29L2031/7158 , B29L2031/7172 , B65D1/00
摘要： The present invention provides a method of manufacturing a practical direct-blow molded container having excellent barrier property against fuels, chemicals, various gases including oxygen. The method of manufacturing a practical direct-blow molded container containing the metaxylylene group-containing polyamide (C) being dispersed and layered in the polyolefin (A) includes using a die provided with a die body having a flow hole in which the melted resin extruded from an extruder flows and a cylindrical hollow having an opening in the lower side and the flow hole in the upper side, the opening and the flow hole opening downward and upward, respectively, a mandrel having a tip in the upper side, the tip pointing to the opening of the tip of the flow hole, a flow path clearance formed between the hollow of the die body and the mandrel, the flow path clearance defining a resin flow path, and a support part formed in the flow path clearance, the support part holding the mandrel in the hollow of the die body.
摘要翻译：本发明提供一种制造实用的直吹式成型容器的方法，该容器对燃料，化学品，包括氧的各种气体具有优异的阻隔性。含有含聚亚甲基基团的聚酰胺（C）的实施例的直吹式成型容器的制造方法包括使用具有流动孔的模具的模具，其中熔融树脂挤出从挤出机流出的圆筒形中空部和具有下侧开口部和上侧流动孔的圆筒状的中空部分，开口部和流动孔分别向下方开口，具有上侧的尖端的芯棒，到流动孔的尖端的开口，形成在模具本体的中空部和心轴之间的流路间隙，限定树脂流路的流路间隙和形成在流路间隙中的支撑部，支撑体将心轴保持在模具本体的中空部分中。

3. 发明授权

US09296881B2 Polyethylene-based structure 有权
标题翻译：聚乙烯基结构
公开(公告)号：US09296881B2
公开(公告)日：2016-03-29
申请号：US14003624
申请日：2012-03-07
申请人： Ryoji Otaki , Kenji Kouno
发明人： Ryoji Otaki , Kenji Kouno
IPC分类号： B32B1/02 , B32B1/08 , C08L23/06 , C08L23/04 , C08L23/08 , C08L23/26 , C08L77/06
CPC分类号： C08L23/06 , B32B1/02 , B32B1/08 , C08L23/04 , C08L23/0846 , C08L23/0869 , C08L23/26 , C08L77/06 , C08L2205/02 , C08L2205/025 , Y10T428/1352 , Y10T428/139 , Y10T428/1393 , Y10T428/1397
摘要： The present invention provides a polyethylene-based structure including from 60 to 90% by mass of a polyethylene (A), from 5 to 35% by mass of an acid-modified polyethylene (B) and from 5 to 35% by mass of a m-xylylene group-containing polyamide (C), in which the m-xylylene group-containing polyamide (C) is dispersed in a layer form in the polyethylene (A) to partially form a continuous phase thereof, and has a relative viscosity of from 2.5 to 4.5.
摘要翻译：本发明提供一种聚乙烯类结构，其含有60〜90质量％的聚乙烯（A），5〜35质量％的酸改性聚乙烯（B）和5〜35质量％的含有间亚二甲苯基的聚酰胺（C），其中含有间亚二甲苯基的聚酰胺（C）以层状分散在聚乙烯（A）中以部分形成连续相，并且具有从2.5到4.5。

4. 发明申请

US20130251927A1 MOLDED ARTICLE HAVING EXCELLENT FUEL BARRIER PROPERTIES 审中-公开
标题翻译：具有优异燃油阻隔性能的模制品
公开(公告)号：US20130251927A1
公开(公告)日：2013-09-26
申请号：US13989936
申请日：2011-11-29
申请人： Kenji Kouno , Ryoji Otaki
发明人： Kenji Kouno , Ryoji Otaki
IPC分类号： B29D22/00 , C08L77/00 , C08L23/26 , B65D1/00 , C08L23/02
CPC分类号： B29C48/92 , B29B7/42 , B29B7/429 , B29B7/726 , B29B7/826 , B29C48/022 , B29C48/023 , B29C48/03 , B29C48/08 , B29C48/30 , B29C48/35 , B29C48/397 , B29C48/53 , B29C48/625 , B29C48/793 , B29C48/83 , B29C48/865 , B29C48/875 , B29C48/91 , B29C48/914 , B29C48/916 , B29C49/04 , B29C2049/001 , B29C2948/92209 , B29C2948/924 , B29C2948/9259 , B29C2948/92647 , B29C2948/92704 , B29C2948/92895 , B29C2948/92904 , B29D22/003 , B29K2023/00 , B29K2077/00 , B29K2105/0097 , B29K2995/0058 , B29L2031/7172 , B65D1/00 , C08L23/02 , C08L23/26 , C08L77/00 , C08L77/06 , Y10T428/1352 , C08L2666/06
摘要： The molded article includes a resin composition with a single shaft extruder, in which the resin composition is generated by melting and mixing a raw mixture, the raw mixture being obtained by blending 40-90 parts by mass of the polyolefin (A), 3-30 parts by mass of the metaxylylene group-containing polyamide (B), and 3-50 parts by mass of the modified polyolefin (C). In the single shaft extruder, the ratio of the length of the feeding part to the screw effective length is 0.40-0.55, the ratio of the length of the compressing part to the screw effective length is 0.10-0.30, the ratio of the length of the measuring part to the screw effective length is 0.10-0.40, the upper limit of the temperature of the feeding part falls within the range of +20° C. from the melting point of the metaxylylene group-containing polyamide or less, and the temperatures of the compressing part and the measuring part fall within the range of −30° C. to +20° C. from the melting point of the metaxylylene group-containing polyamide, and the shear rate is 14/second or more.
摘要翻译：成型体包括具有单轴挤出机的树脂组合物，其中通过将原料混合物熔融混合而生成树脂组合物，该混合物通过将40-90质量份的聚烯烃（A），3- 30质量份含有间亚二甲苯基的聚酰胺（B）和3-50质量份的改性聚烯烃（C）。在单轴挤出机中，进料部分长度与螺杆有效长度之比为0.40-0.55，压缩部分长度与螺杆有效长度之比为0.10-0.30，长度比螺杆有效长度的测量部分为0.10-0.40，进料部分的温度的上限从含有含亚甲基基团的聚酰胺的熔点降低到+ 20℃的范围内，温度的压缩部分和测量部分在-30℃至+ 20℃的范围内，并且剪切速率为14秒/秒以上。

5. 发明申请

US20130344270A1 POLYETHYLENE-BASED STRUCTURE 有权
标题翻译：基于聚乙烯的结构
公开(公告)号：US20130344270A1
公开(公告)日：2013-12-26
申请号：US14003624
申请日：2012-03-07
申请人： Ryoji Otaki , Kenji Kouno
发明人： Ryoji Otaki , Kenji Kouno
IPC分类号： C08L23/06 , C08L77/06 , C08L23/26
CPC分类号： C08L23/06 , B32B1/02 , B32B1/08 , C08L23/04 , C08L23/0846 , C08L23/0869 , C08L23/26 , C08L77/06 , C08L2205/02 , C08L2205/025 , Y10T428/1352 , Y10T428/139 , Y10T428/1393 , Y10T428/1397
摘要： The present invention provides a polyethylene-based structure including from 60 to 90% by mass of a polyethylene (A), from 5 to 35% by mass of an acid-modified polyethylene (B) and from 5 to 35% by mass of a m-xylylene group-containing polyamide (C), in which the m-xylylene group-containing polyamide (C) is dispersed in a layer form in the polyethylene (A) to partially form a continuous phase thereof, and has a relative viscosity of from 2.5 to 4.5.
摘要翻译：本发明提供一种聚乙烯类结构，其含有60〜90质量％的聚乙烯（A），5〜35质量％的酸改性聚乙烯（B）和5〜35质量％的含有间亚二甲苯基的聚酰胺（C），其中含有间亚二甲苯基的聚酰胺（C）以层状分散在聚乙烯（A）中以部分形成连续相，并且具有从2.5到4.5。

6. 发明授权

US08451023B2 Semiconductor device having diode-built-in IGBT and semiconductor device having diode-built-in DMOS 有权
公开(公告)号：US08451023B2
公开(公告)日：2013-05-28
申请号：US13270320
申请日：2011-10-11
申请人： Kenji Kouno
发明人： Kenji Kouno
IPC分类号： H01L29/78 , H03K19/08
CPC分类号： H01L27/0255 , H01L29/7397 , H01L2924/0002 , H02M1/32 , H02M2001/0009 , H03K17/0828 , H03K17/145 , H03K2217/0027 , H01L2924/00
摘要： A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

7. 发明授权

US07728382B2 Semiconductor device having diode and IGBT 有权
标题翻译：具有二极管和IGBT的半导体器件
公开(公告)号：US07728382B2
公开(公告)日：2010-06-01
申请号：US12222557
申请日：2008-08-12
申请人： Yukio Tsuzuki , Kenji Kouno
发明人： Yukio Tsuzuki , Kenji Kouno
IPC分类号： H01L29/76
CPC分类号： H01L27/0676 , H01L29/0623 , H01L29/7395 , H01L29/872
摘要： A semiconductor device includes: a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element. The plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate. Each diode region includes a Schottky contact region having a second conductive type. The Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer. The Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region.
摘要翻译：半导体器件包括：包括第一导电类型层的半导体衬底; 多个IGBT区域，每个IGBT区域提供IGBT元件; 以及多个二极管区域，每个二极管区域提供二极管元件。多个IGBT区域和多个二极管区域交替地布置在基板中。每个二极管区域包括具有第二导电类型的肖特基接触区域。肖特基接触区域被配置为从第一导电类型层检索少数载流子。肖特基接触区域设置在第一导电类型层的第一表面部分中，并且与IGBT区域相邻。

8. 发明申请

US20090242931A1 Semiconductor device having IGBT and diode 有权
标题翻译：具有IGBT和二极管的半导体器件
公开(公告)号：US20090242931A1
公开(公告)日：2009-10-01
申请号：US12385164
申请日：2009-03-31
申请人： Yukio Tsuzuki , Kenji Kouno
发明人： Yukio Tsuzuki , Kenji Kouno
IPC分类号： H01L27/06 , H01L29/739
CPC分类号： H01L29/861 , H01L29/0619 , H01L29/167 , H01L29/407 , H01L29/7397 , H01L29/8611
摘要： A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other.
摘要翻译：半导体器件包括：衬底; 包括IGBT单元区域和二极管单元区域的有源元件单元区域; 在所述有源元件单元区域中的所述基板的第一侧上的第一半导体区域; 在所述IGBT单元区域中的所述基板的第二侧上的第二半导体区域; 在二极管单元区域中的第二侧上的第三半导体区域; 围绕所述有源元件单元区域的所述第一侧上的第四半导体区域; 围绕第四半导体区域的第一侧的第五半导体区域; 以及在第四半导体区域下方的第二侧上的第六半导体区域。第二半导体区域，第三半导体区域和第六半导体区域彼此电耦合。

9. 发明授权

US5028640A Aromatic polycarbonate resin composition for molding 失效
标题翻译：用于成型的芳香族聚碳酸酯树脂组合物
公开(公告)号：US5028640A
公开(公告)日：1991-07-02
申请号：US442106
申请日：1989-11-28
申请人： Goro Shimaoka , Kenji Kouno
发明人： Goro Shimaoka , Kenji Kouno
IPC分类号： C08K5/16 , C08K5/353 , C08K7/00 , C08K7/06 , C08K9/08 , C08L69/00
CPC分类号： C08K5/353 , C08K9/08
摘要： An aromatic polycarbonate resin composition for molding, comprising (a) an aromatic polycarbonate resin, (a) carbon fibers sized with an aromatic polycarbonate resin, and (c) an organic compound having at least two oxazoline rings per molecule is dislosed. The composition has excellent extrusion workability, mold deposit-preventing property and mechanical strength, and can be used as a molding material in the field of precision machines such as cameras, VTR's and facsimiles.

10. 发明授权

US08847276B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08847276B2
公开(公告)日：2014-09-30
申请号：US13805740
申请日：2011-06-29
申请人： Hiromitsu Tanabe , Kenji Kouno , Yukio Tsuzuki
发明人： Hiromitsu Tanabe , Kenji Kouno , Yukio Tsuzuki
IPC分类号： H01L29/739 , H01L27/07 , H01L29/66 , H01L29/861 , H01L29/06
CPC分类号： H01L27/0664 , H01L27/0722 , H01L29/0696 , H01L29/4236 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： In a semiconductor device including an IGBT and a freewheeling diode (FWD), W1, W2, and W3 satisfy predetermined formulas. W1 denotes a distance from a boundary between a cathode region and a collector region to a position, where a peripheral-region-side end of the well layer is projected, on a back side of the drift layer. W2 denotes a distance from a boundary between the IGBT and the FWD in a base region to the peripheral-region-side end of the well layer. W3 denotes a distance from the boundary between the cathode region and the collector region to a position, where a boundary between the base region and the well layer is projected, on the back side.
摘要翻译：在包括IGBT和续流二极管（FWD）的半导体器件中，W1，W2和W3满足预定的公式。 W1表示从阴极区域和集电极区域之间的边界到阱层的周边区域侧端部投射在位于漂移层的背面的位置的距离。 W2表示从基极区域到阱区域的周边区域侧的IGBT与FWD之间的边界的距离。 W3表示从阴极区域和集电极区域之间的边界到背面侧的基底区域和阱层之间的边界的位置的距离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式