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1. 发明申请

US20070217750A1 Interconnecting (mapping) a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array 有权
标题翻译：将二维光电（OE）器件阵列互连（映射）到一维波导阵列
公开(公告)号：US20070217750A1
公开(公告)日：2007-09-20
申请号：US11374777
申请日：2006-03-14
申请人： Russell Budd , Punit Chiniwalla , John Guckenberger , Jeffrey Kash , Jeremy Schaub , Michael Tan , Jeannine Trewhella , Garry Trott
发明人： Russell Budd , Punit Chiniwalla , John Guckenberger , Jeffrey Kash , Jeremy Schaub , Michael Tan , Jeannine Trewhella , Garry Trott
IPC分类号： G02B6/36 , G02B6/26 , G02B6/12 , G02B6/42
CPC分类号： G02B6/43 , G02B6/42 , G02B6/4214 , G02B6/4246
摘要： For integrated circuits including circuit packaging and circuit communication technologies provision is made for a method of interconnecting or mapping a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array. Also provided is an arrangement for the interconnecting or mapping of a two-dimensional optoelectronic (OE) device array to a one-dimensional waveguide array.
摘要翻译：对于包括电路封装和电路通信技术的集成电路，提供了将二维光电（OE）器件阵列互连或映射到一维波导阵列的方法。还提供了用于将二维光电（OE）器件阵列互连或映射到一维波导阵列的布置。

2. 发明申请

US20050129414A1 Testing of transimpedance amplifiers 有权
标题翻译：跨阻放大器测试
公开(公告)号：US20050129414A1
公开(公告)日：2005-06-16
申请号：US10736424
申请日：2003-12-15
申请人： John Guckenberger , Young Kwark , Jeremy Schaub
发明人： John Guckenberger , Young Kwark , Jeremy Schaub
IPC分类号： H04B10/06 , H04B10/12 , H04B10/158
CPC分类号： H04B10/25
摘要： Testing is performed on an amplifier wafer housing a transimpedance amplifier prior to packaging the transimpedance amplifier with an external photodetector, wherein the transimpedance amplifier includes a small, auxiliary, integrated silicon photodetector provided at the input of the transimpedance, in parallel with external photodetector attachment points. The small auxiliary photodetector does not significantly affect the high speed performance of the transimpedance amplifier. The small auxiliary photodetector is provided to facilitate wafer-level testing at the transimpedance amplifier input. To test the transimpedance amplifier, the transimpedance amplifier is stimulated by optically exciting the small auxiliary photodetector, wherein the small auxiliary photodetector is excited using short wavelength light, whereby advantages such as higher efficiency may be obtained. The testing method includes placing the amplifier wafer in a testing system, probing the power and ground connections on the amplifier wafer, illuminating the small auxiliary photodetector on the amplifier wafer, and detecting the output of the transimpedance amplifier housed on the amplifier wafer. The output of the transimpedance amplifier may detected by probing the supply voltage and detecting the switching currents passing through a bias tee using a spectrum analyzer, using a high gain antenna and a sensitive narrow band receiver, or using a high speed electrical probe.
摘要翻译：在将跨阻抗放大器封装在外部光电检测器之前，在放大器晶片上进行测试，其中跨导放大器包括一个小的辅助集成硅光电检测器，其设置在跨阻抗的输入处，与外部光电检测器连接点。小型辅助光电探测器不会显着影响跨阻放大器的高速性能。提供小型辅助光电探测器以便于跨阻放大器输入端的晶圆级测试。为了测试跨阻抗放大器，通过光学激励小型辅助光电探测器来刺激跨阻放大器，其中使用短波长光来激发小的辅助光电探测器，由此可以获得诸如更高效率的优点。测试方法包括将放大器晶片放置在测试系统中，探测放大器晶片上的电源和接地连接，照射放大器晶片上的小辅助光电检测器，以及检测放大晶片上的跨阻放大器的输出。跨导放大器的输出可以通过使用高增益天线和敏感窄带接收机，或使用高速电探测器，利用频谱分析仪探测电源电压和检测通过偏置三通的开关电流来检测。

3. 发明申请

US20070018737A1 High frequency ring oscillator with feed-forward paths 失效
标题翻译：具有前馈路径的高频环形振荡器
公开(公告)号：US20070018737A1
公开(公告)日：2007-01-25
申请号：US11184352
申请日：2005-07-19
申请人： Alan Drake , Fadi Gebara , Jeremy Schaub
发明人： Alan Drake , Fadi Gebara , Jeremy Schaub
IPC分类号： H03K3/03
CPC分类号： H03K3/0315 , H03K3/012
摘要： An inverting circuit comprises a first inverter in a main path having a first input and a common ouput. A second inverter receives the first input and is coupled with a first voltage controlled pass gate to the common output. A third inverter couples a second input to the common output using a second voltage controlled pass gate. A fourth inverter couples the second input to the common output using the first voltage controlled pass gate. A ring oscillator is formed using a number N of the inverting circuits with each common output coupled to the first inputs forming a main ring of a ring oscillator. The second inputs are coupled to feed-forward signals from selected outputs. The resulting signals at the common outputs are an interpolation of the first and second input signals modulated by a control voltage coupled to the first and second pass gates.
摘要翻译：反相电路包括具有第一输入和公共输出的主路径中的第一反相器。第二反相器接收第一输入并与第一电压控制的通过门耦合到公共输出端。第三反相器使用第二电压控制通孔将第二输入耦合到公共输出。第四反相器使用第一电压控制通路将第二输入耦合到公共输出端。使用数目为N的反相电路形成环形振荡器，其中每个公共输出耦合到形成环形振荡器的主环的第一输入。第二输入耦合到来自所选输出的前馈信号。在公共输出端产生的信号是由耦合到第一和第二通道门的控制电压调制的第一和第二输入信号的内插。

4. 发明申请

US20050184354A1 Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector 有权
标题翻译：制造高速CMOS兼容的绝缘体上的光电探测器的结构和方法
公开(公告)号：US20050184354A1
公开(公告)日：2005-08-25
申请号：US10785894
申请日：2004-02-24
申请人： Jack Chu , Gabriel Dehlinger , Alfred Grill , Steven Koester , Qiging Ouyang , Jeremy Schaub
发明人： Jack Chu , Gabriel Dehlinger , Alfred Grill , Steven Koester , Qiging Ouyang , Jeremy Schaub
IPC分类号： H01L31/101 , H01L31/075
CPC分类号： H01L31/101
摘要： The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.
摘要翻译：本发明解决了与Si CMOS技术兼容的高速高效光电探测器的问题。该结构由薄的SOI衬底上的Ge吸收层组成，并且使用隔离区，交替的n型和p型接触以及低电阻表面电极。该器件通过利用掩埋绝缘层来隔离衬底中产生的载流子，通过利用Ge吸收层在宽谱上具有高量子效率，通过利用薄的吸收层和窄电极间隔的低电压操作以及兼容性来实现高带宽通过其平面结构和使用IV族吸收材料的CMOS器件。用于制造光电检测器的方法使用在薄SOI或外延氧化物上的Ge的直接生长，以及随后的热退火以实现高质量的吸收层。该方法限制可用于相互扩散的Si的量，从而允许Ge层退火，而不会导致Ge层被下面的Si大量稀释。

5. 发明申请

US20060222370A1 Methods and apparatus for optical modulation amplitude measurement 审中-公开
标题翻译：用于光调制幅度测量的方法和装置
公开(公告)号：US20060222370A1
公开(公告)日：2006-10-05
申请号：US11068661
申请日：2005-02-28
申请人： Casimer DeCusatis , Daniel Kuchta , Jeremy Schaub
发明人： Casimer DeCusatis , Daniel Kuchta , Jeremy Schaub
IPC分类号： H04B10/00 , G01R31/26
CPC分类号： G01M11/333 , G01M11/30
摘要： Techniques for measuring optical modulation amplitude (OMA) are disclosed. For example, a technique for measuring an OMA value associated with an input signal includes the following steps/operations. The input signal is applied to a photodetector, wherein the photodetector is calibrated to have a given responsivity value R, and further wherein the photodetector generates an output signal in response to the input signal. The output signal from the photodetector is applied to a radio frequency (RF) power meter, wherein the RF power meter measures the root mean squared (RMS) power value of the output signal received from the photodetector. The OMA value associated with the input signal is determined in response to the root mean squared (RMS) power value measured by the RF power meter. The OMA value may be determined as a function of a factor F derived from a relationship between an amplitude of a data signal and the RMS value of the data signal.
摘要翻译：公开了用于测量光调制幅度（OMA）的技术。例如，用于测量与输入信号相关联的OMA值的技术包括以下步骤/操作。输入信号被施加到光电检测器，其中光电检测器被校准为具有给定的响应度值R，并且其中光电检测器响应于输入信号产生输出信号。来自光电检测器的输出信号被施加到射频（RF）功率计，其中RF功率计测量从光电检测器接收的输出信号的均方根（RMS）功率值。响应于由RF功率计测得的均方根（RMS）功率值，确定与输入信号相关的OMA值。可以根据数据信号的幅度与数据信号的RMS值之间的关系导出的因子F的函数来确定OMA值。

6. 发明申请

US20060118894A1 High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same 有权
公开(公告)号：US20060118894A1
公开(公告)日：2006-06-08
申请号：US11329185
申请日：2006-01-11
申请人： Guy Cohen , Qiqing Ouyang , Jeremy Schaub
发明人： Guy Cohen , Qiqing Ouyang , Jeremy Schaub
IPC分类号： H01L29/82 , H01L27/14 , H01L29/84
CPC分类号： H01L31/1085 , H01L31/02327 , H01L31/035272 , H01L31/105
摘要： A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.

7. 发明申请

US20080024233A1 High Frequency Ring Oscillator With Feed-Forward Paths 审中-公开
标题翻译：具有前馈路径的高频环形振荡器
公开(公告)号：US20080024233A1
公开(公告)日：2008-01-31
申请号：US11849844
申请日：2007-09-04
申请人： Alan Drake , Fadi Gebara , Jeremy Schaub
发明人： Alan Drake , Fadi Gebara , Jeremy Schaub
IPC分类号： H03K3/03 , H03L7/00
CPC分类号： H03K3/0315 , H03K3/012
摘要： An inverting circuit comprises a first inverter in a main path having a first input and a common ouput. A second inverter receives the first input and is coupled with a first voltage controlled pass gate to the common output. A third inverter couples a second input to the common output using a second voltage controlled pass gate. A fourth inverter couples the second input to the common output using the first voltage controlled pass gate. A ring oscillator is formed using a number N of the inverting circuits with each common output coupled to the first inputs forming a main ring of a ring oscillator. The second inputs are coupled to feed-forward signals from selected outputs. The resulting signals at the common outputs are an interpolation of the first and second input signals modulated by a control voltage coupled to the first and second pass gates.
摘要翻译：反相电路包括具有第一输入和公共输出的主路径中的第一反相器。第二反相器接收第一输入并与第一电压控制的通过门耦合到公共输出端。第三反相器使用第二电压控制通孔将第二输入耦合到公共输出。第四反相器使用第一电压控制通路将第二输入耦合到公共输出端。使用数目为N的反相电路形成环形振荡器，其中每个公共输出耦合到形成环形振荡器的主环的第一输入。第二输入耦合到来自所选输出的前馈信号。在公共输出端产生的信号是由耦合到第一和第二通道门的控制电压调制的第一和第二输入信号的内插。

8. 发明申请

US20070244656A1 METHOD AND APPARATUS FOR DETERMINING JITTER AND PULSE WIDTH FROM CLOCK SIGNAL COMPARISONS 失效
标题翻译：用于确定时钟信号比较的抖动和脉冲宽度的方法和装置
公开(公告)号：US20070244656A1
公开(公告)日：2007-10-18
申请号：US11279651
申请日：2006-04-13
申请人： Hayden Cranford , Fadi Gebara , Jeremy Schaub
发明人： Hayden Cranford , Fadi Gebara , Jeremy Schaub
IPC分类号： G06F19/00 , G01R29/02 , G06F17/40
CPC分类号： G01R31/31709 , G01R31/31725
摘要： A method and apparatus for determining jitter and pulse width from clock signal comparisons provides a low cost and production-integrable mechanism for measuring a clock signal with a reference clock, both of unknown frequency. The measured clock signal is sampled at transitions of a reference clock and the sampled values are collected in a histogram according to a folding of the samples around a timebase which is either swept to detect a minimum jitter for the folded data or is obtained from direct frequency analysis for the sample set. The histogram for the correct estimated period is statistically analyzed to yield the pulse width, which is the difference between the peaks of the probability density function and jitter, which corresponds to width of the density function peaks. Frequency drift is corrected by adjusting the timebase used to fold the data across the sample set.
摘要翻译：用于从时钟信号比较确定抖动和脉冲宽度的方法和装置提供了一种低成本和可生产可集成的机制，用于测量具有未知频率的参考时钟的时钟信号。测量的时钟信号在参考时钟的转变时被采样，并且采样值被收集在直方图中，根据时基的周围样本的折叠，该时基被扫描以检测折叠数据的最小抖动，或者从直接频率获得分析样本集。统计分析正确估计周期的直方图以产生脉冲宽度，其是概率密度函数和抖动的峰值之间的差异，其对应于密度函数峰值的宽度。通过调整用于将样本集合中的数据折叠的时基来校正频率漂移。

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