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1. 发明申请

US20050277780A1 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US20050277780A1
公开(公告)日：2005-12-15
申请号：US11199032
申请日：2005-08-08
申请人： Roy Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C23C16/42 , C07F9/09 , C07F9/11 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316 , C07F11/00 , H01L21/8238
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

2. 发明申请

US20050112282A1 Vapor deposition of silicon dioxide nanolaminates 有权
标题翻译：二氧化硅纳米层压板的气相沉积
公开(公告)号：US20050112282A1
公开(公告)日：2005-05-26
申请号：US10951464
申请日：2004-09-27
申请人： Roy Gordon , Jill Becker , Dennis Hausmann
发明人： Roy Gordon , Jill Becker , Dennis Hausmann
IPC分类号： C23C16/42 , C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/31 , H01L21/316 , H01L21/469
CPC分类号： C23C16/45534 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/403 , C23C16/45525 , C23C16/45529 , C23C16/45555
摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
摘要翻译：本发明涉及在固体基底上薄膜沉积的材料和方法。通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。这些胶片是透明和良好的电绝缘体。本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔介电材料的材料和工艺，其中表面孔隙率被显着地减少或去除，同时保持内部孔隙率以保持整个介电材料的期望的低k值。本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

3. 发明申请

US20120028478A1 VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐和二氧化硅的蒸气沉积
公开(公告)号：US20120028478A1
公开(公告)日：2012-02-02
申请号：US12407556
申请日：2009-03-19
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

4. 发明授权

US08008743B2 Vapor deposition of silicon dioxide nanolaminates 有权
标题翻译：二氧化硅纳米层压板的气相沉积
公开(公告)号：US08008743B2
公开(公告)日：2011-08-30
申请号：US10951464
申请日：2004-09-27
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann
IPC分类号： H01L21/70
CPC分类号： C23C16/45534 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/403 , C23C16/45525 , C23C16/45529 , C23C16/45555
摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
摘要翻译：本发明涉及在固体基底上薄膜沉积的材料和方法。通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。这些胶片是透明和良好的电绝缘体。本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔电介质材料的材料和工艺，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度以保持整个介电材料的期望的低k值。本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

5. 发明申请

US20110281417A1 VAPOR DEPOSITION OF SILICON DIOXIDE NANOLAMINATES 有权
标题翻译：二氧化硅纳米酰胺的蒸气沉积
公开(公告)号：US20110281417A1
公开(公告)日：2011-11-17
申请号：US13189283
申请日：2011-07-22
申请人： Roy G. GORDON , Jill Becker , Dennis Hausmann
发明人： Roy G. GORDON , Jill Becker , Dennis Hausmann
IPC分类号： H01L21/762 , H01L21/316 , B82Y40/00
CPC分类号： C23C16/45534 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/403 , C23C16/45525 , C23C16/45529 , C23C16/45555
摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
摘要翻译：本发明涉及在固体基底上薄膜沉积的材料和方法。通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。这些胶片是透明和良好的电绝缘体。本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔电介质材料的材料和工艺，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度以保持整个介电材料的期望的低k值。本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

6. 发明授权

US06969539B2 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US06969539B2
公开(公告)日：2005-11-29
申请号：US10381628
申请日：2001-09-28
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C23C16/42 , C07F9/09 , C07F9/11 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热至300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基底上，以交替脉冲提供蒸气，产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

7. 发明申请

US20060125099A1 Vapor deposition of tungsten nitride 有权
公开(公告)号：US20060125099A1
公开(公告)日：2006-06-15
申请号：US10520456
申请日：2003-07-09
申请人： Roy Gordon , Seigi Suh , Jill Becker
发明人： Roy Gordon , Seigi Suh , Jill Becker
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： C23C16/45553 , C07F11/005 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45542 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L28/60 , H01L29/4966
摘要： Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.

8. 发明申请

US20060021573A1 Vapor deposition systems and methods 有权
标题翻译：气相沉积系统和方法
公开(公告)号：US20060021573A1
公开(公告)日：2006-02-02
申请号：US11167570
申请日：2005-06-27
申请人： Douwe Monsma , Jill Becker
发明人： Douwe Monsma , Jill Becker
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , B01D53/0407 , B01D2258/0216 , C23C16/44 , C23C16/4412 , C23C16/45544
摘要： Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.
摘要翻译：提供蒸气沉积系统和与之相关的方法。该系统可以被设计成包括能够促进高质量沉积的特征; 简化制造，修改和使用; 以及减少系统的占地面积等优点。

9. 发明授权

US07560581B2 Vapor deposition of tungsten nitride 有权
标题翻译：氮化钨的蒸镀
公开(公告)号：US07560581B2
公开(公告)日：2009-07-14
申请号：US10520456
申请日：2003-07-09
申请人： Roy G. Gordon , Seigi Suh , Jill Becker
发明人： Roy G. Gordon , Seigi Suh , Jill Becker
IPC分类号： C07F11/00 , C23C16/34 , H01L21/44
CPC分类号： C23C16/45553 , C07F11/005 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45542 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L28/60 , H01L29/4966
摘要： Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.
摘要翻译：通过二（烷基酰亚胺）双（二烷基酰胺）二氧化钨和路易斯碱或氢等离子体的蒸气的反应，将氮化钨膜沉积在加热的基底上。例如，双（叔丁基酰亚胺）双（二甲基酰胺）二氧化钨和氨气的蒸气以加热到300℃的表面的交替剂量供应，产生具有非常均匀厚度的氮化钨涂层，并且在具有纵横比的孔中具有优异的台阶覆盖至少40：1。这些膜是金属和良好的电导体。在微电子学中的适用应用包括铜和电容器电极的扩散障碍。类似的方法沉积氮化钼，其适合于在X射线反射镜中与硅交替的层。

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