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1. 发明申请

US20120028478A1 VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐和二氧化硅的蒸气沉积
公开(公告)号：US20120028478A1
公开(公告)日：2012-02-02
申请号：US12407556
申请日：2009-03-19
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

2. 发明申请

US20110163062A1 SELF-ALIGNED BARRIER AND CAPPING LAYERS FOR INTERCONNECTS 有权
标题翻译：用于互连的自对准障碍物和捕获层
公开(公告)号：US20110163062A1
公开(公告)日：2011-07-07
申请号：US12908323
申请日：2010-10-20
申请人： Roy G. GORDON , Harish B. BHANDARI , Yeung AU , Youbo LIN
发明人： Roy G. GORDON , Harish B. BHANDARI , Yeung AU , Youbo LIN
IPC分类号： H05K3/22 , H05K3/00 , C25D5/02
CPC分类号： H01L23/53238 , C23C16/18 , C23C16/34 , C23C16/401 , H01L21/28506 , H01L21/28556 , H01L21/28562 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76826 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835 , H01L21/76843 , H01L21/76849 , H01L21/76853 , H01L21/76862 , H01L21/76867 , H01L21/76871 , H01L21/76873 , H01L21/76874 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure for integrated circuits for copper wires in integrated circuits and methods for making the same are provided. Mn, Cr, or V containing layer forms a barrier against copper diffusing out of the wires, thereby protecting the insulator from premature breakdown, and protecting transistors from degradation by copper. The Mn, Cr, or V containing layer also promotes strong adhesion between copper and insulators, thus preserving the mechanical integrity of the devices during manufacture and use, as well as protecting against failure by electromigration of the copper during use of the devices and protecting the copper from corrosion by oxygen or water from its surroundings. In forming such integrated circuits, certain embodiments of the invention provide methods to selectively deposit Mn, Cr, V, or Co on the copper surfaces while reducing or even preventing deposition of Mn, Cr, V, or Co on insulator surfaces. Catalytic deposition of copper using a Mn, Cr, or V containing precursor and an iodine or bromine containing precursor is also provided.
摘要翻译：提供了一种用于集成电路中铜线集成电路的互连结构及其制造方法。含有Mn，Cr或V的层形成了阻碍铜从电线中扩散的阻挡层，从而保护绝缘体免于过早击穿，并保护晶体管免受铜的退化。含Mn，Cr或V的层还促进了铜和绝缘体之间的强粘附，从而在制造和使用过程中保持了器件的机械完整性，并且在使用器件期间防止铜的电迁移失效，并保护铜从其周围的氧气或水中腐蚀。在形成这样的集成电路中，本发明的某些实施例提供了在铜表面上选择性地沉积Mn，Cr，V或Co的方法，同时减少或甚至防止在绝缘体表面上沉积Mn，Cr，V或Co。还提供了使用含有Mn，Cr或V的前体和含碘或溴的前体的铜的催化沉积。

3. 发明授权

US07557229B2 Atomic layer deposition using metal amidinates 有权
标题翻译：使用金属脒基的原子层沉积
公开(公告)号：US07557229B2
公开(公告)日：2009-07-07
申请号：US10534687
申请日：2003-11-14
申请人： Roy G. Gordon , Booyong S. Lim
发明人： Roy G. Gordon , Booyong S. Lim
IPC分类号： C07F15/00 , C23C16/00 , C07F7/00 , C07F9/00
CPC分类号： C23C16/404 , C07C257/14 , C23C16/18 , C23C16/40 , C23C16/403 , C23C16/406 , C23C16/45553
摘要： Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) N,N′-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N′-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
摘要翻译：金属膜以均匀的厚度沉积并具有优异的台阶覆盖率。通过交替剂量的铜（I）N，N'-二异丙基乙酰胺化物蒸汽和氢气的反应，将铜金属膜沉积在加热的基底上。通过交替剂量的双（N，N'-二异丙基乙酰胺基）钴（II）蒸气和氢气的反应，将钴金属膜沉积在加热的基底上。这些金属的氮化物和氧化物可以通过分别用氨或水蒸汽代替氢来形成。薄膜具有非常均匀的厚度，并且在窄孔中具有优异的台阶覆盖率。合适的应用包括微电子学中的电互连和磁信息存储设备中的磁阻层。

4. 发明授权

US06994800B1 Liquid precursors for formation of materials containing alkali metals 有权
标题翻译：用于形成含有碱金属的材料的液体前体
公开(公告)号：US06994800B1
公开(公告)日：2006-02-07
申请号：US10019458
申请日：2000-04-28
申请人： Roy G. Gordon , Randy N. R. Broomhall-Dillard
发明人： Roy G. Gordon , Randy N. R. Broomhall-Dillard
IPC分类号： C09K3/00 , C23C16/06 , H01L21/00 , B05D3/01 , B05D3/12
CPC分类号： C23C18/1216 , C07F1/005 , C23C16/18 , C23C16/40 , C23C18/08 , C23C18/122 , C23C18/1254
摘要： Volatile liquid precursors are provided for use in the formation of alkali metal-containing materials. The compound includes an alkali metal and an amide ligand and is a liquid at a temperature of less than about 70° C.
摘要翻译：挥发性液体前体被提供用于形成含碱金属的材料。该化合物包括碱金属和酰胺配体，并且是在小于约70℃的温度下的液体。

5. 发明授权

US5656338A Liquid solution of TiBr.sub.4 in Br.sub.2 used as a precursor for the chemical vapor deposition of titanium or titanium nitride 失效
标题翻译： TiBr4在Br2中的液体溶液用作钛或氮化钛的化学气相沉积的前体
公开(公告)号：US5656338A
公开(公告)日：1997-08-12
申请号：US473499
申请日：1995-06-07
申请人： Roy G. Gordon
发明人： Roy G. Gordon
IPC分类号： C23C16/14 , C23C16/34 , B05D3/06 , C23C16/00
CPC分类号： C23C16/34 , C23C16/14
摘要： Chemical vapor deposition of titanium metal is accomplished by forming a liquid solution of titanium tetrabromide in bromine, vaporizing the solution and contacting the vapor mixture with a plasma in the vicinity of a substrate. These titanium films show good conformality, low electrical resistance and are suitable as contact and adhesion layers in semiconductor microelectronics. By mixing ammonia gas with the mixed vapors of titanium tetrabromide and bromine, films containing titanium nitride are deposited at about 400.degree. C. These titanium nitride films are suitable as diffusion barriers and adhesion layers in semiconductor devices.
摘要翻译：钛金属的化学气相沉积是通过在溴中形成四溴化钛的液体溶液，蒸发溶液并使蒸汽混合物与基底附近的等离子体接触来实现的。这些钛膜显示良好的共形性，低电阻，并且适合作为半导体微电子学中的接触和粘附层。通过将氨气与四溴化钛和溴的混合蒸气混合，在约400℃下沉积含有氮化钛的膜。这些氮化钛膜适合作为半导体器件中的扩散阻挡层和粘附层。

6. 发明授权

US5178911A Process for chemical vapor deposition of main group metal nitrides 失效
标题翻译：主要金属氮化物的化学气相沉积工艺
公开(公告)号：US5178911A
公开(公告)日：1993-01-12
申请号：US790576
申请日：1991-11-08
申请人： Roy G. Gordon , David Hoffman , Umar Riaz
发明人： Roy G. Gordon , David Hoffman , Umar Riaz
IPC分类号： C23C16/34
CPC分类号： C23C16/34
摘要： A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn.sub.3 N.sub.4, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C. resulting in deposition of a film on the substrate.
摘要翻译：提供了沉积诸如AlN，GaN或Sn 3 N 4等主要金属氮化物的薄膜的工艺。将主族金属氨基化合物的蒸气与氨气混合并使其在加热到100℃至400℃的温度的基板附近反应，导致在基材上沉积膜。

7. 发明授权

US4990286A Zinc oxyfluoride transparent conductor 失效
标题翻译：氟氧化锌透明导体
公开(公告)号：US4990286A
公开(公告)日：1991-02-05
申请号：US324808
申请日：1989-03-17
申请人： Roy G. Gordon
发明人： Roy G. Gordon
IPC分类号： C01G9/00 , C01G9/04 , C03C17/25 , C23C16/40 , F21V9/04 , G02F1/01 , G02F1/1343 , G02F1/153 , G02F1/155 , H01B1/08 , H01L31/0216 , H01L31/062 , H01L31/18 , H05B33/28
CPC分类号： H01L31/02168 , C01G9/04 , C23C16/407 , G02F1/0102 , H01B1/08 , H01L31/062 , H01L31/1884 , H05B33/28 , G02F2001/1536 , Y02E10/50
摘要： Transparent, electrically conductive and infrared-reflective films of zinc oxyfluoride are produced by chemical vapor deposition from vapor mixtures of zinc, oxygen and fluorine-containing compounds. The substitution of fluorine for some of the oxygen in zinc oxide results in dramatic increases in the electrical conductivity. For example, diethyl zinc, ethyl alcohol and hexafluoropropene vapors are reacted over a glass surface at 400.degree. C. to form a visibly transparent, electrically conductive, infrared reflective and ultraviolet absorptive film of zinc oxyfluoride. Such films are useful in liquid crystal display devices, solar cells, electrochromic absorbers and reflectors, energy-conserving heat mirrors, and antistatic coatings.
摘要翻译：通过从锌，氧和含氟化合物的蒸汽混合物的化学气相沉积产生氟氧化锌的透明导电和红外反射膜。在氧化锌中氟的一些氧的取代导致导电性的显着增加。例如，二乙基锌，乙醇和六氟丙烯蒸气在400℃下在玻璃表面上反应，以形成可见透明的，导电的红外线反应性和紫外吸收性的氟氧化锌膜。这种膜可用于液晶显示装置，太阳能电池，电致变色吸收剂和反射器，节能热反射镜和抗静电涂层。

8. 发明授权

US4595634A Coating process for making non-iridescent glass 失效
标题翻译：非彩虹色玻璃的涂装工艺
公开(公告)号：US4595634A
公开(公告)日：1986-06-17
申请号：US519248
申请日：1983-08-01
申请人： Roy G. Gordon
发明人： Roy G. Gordon
IPC分类号： B32B5/14 , B32B17/06 , C03C17/34 , C23C16/40 , B32B9/00
CPC分类号： C03C17/3417 , C03C17/3435
摘要： This disclosure describes a novel method of coating a substrate, e.g., including a transparent glass substrate, with a very thin inorganic coating of predetermined varying composition, e.g. an electrically-conductive tin oxide coating. The coating is carried out in such a way that quality control problems associated with leakage of the coating reactants from the reaction zone are virtually eliminated. The resulting coating can exhibit excellent non-iridescent properties even at thicknesses well below one micrometer.
摘要翻译：本公开描述了一种用预定变化组成的非常薄的无机涂层（例如包括透明玻璃基底）涂覆基底的新方法。导电氧化锡涂层。涂层以这样的方式进行，即与涂层反应物从反应区泄漏相关的质量控制问题实际上被消除。即使在远低于一微米的厚度下，所得到的涂层也可呈现优异的非虹彩性。

9. 发明授权

US4585674A Method for continuous coating of glass 失效
标题翻译：连续涂布玻璃的方法
公开(公告)号：US4585674A
公开(公告)日：1986-04-29
申请号：US704609
申请日：1985-02-25
申请人： Roy G. Gordon
发明人： Roy G. Gordon
IPC分类号： C03C17/22 , C23C16/34 , C23C16/40
CPC分类号： C03C17/225 , C23C16/34 , C03C2217/281 , C03C2218/152
摘要： A process for coating a wide moving web with the product of chemical reactants first brought into contact at a point proximate the glass surface. The process comprises a primary distribution of reactants (across the width of the substrate) through a row of small apertures, then a segregation through a secondary passage to a reaction zone at the surface of the substrate. Reactant distribution pipes are advantageously positioned and shaped to form only a gradual increase in width of the reactant flow path as they enter the reaction zone.
摘要翻译：用化学反应物的产物首先在靠近玻璃表面的点接触涂覆宽移动幅材的方法。该方法包括通过一排小孔的反应物（穿过基底的宽度）的主要分布，然后通过次级通道偏析到基底表面处的反应区。反应物分配管有利地定位和成形，以在反应物流动路径进入反应区域时仅形成逐渐增加的反应物流动路径。

10. 发明授权

US4524718A Reactor for continuous coating of glass 失效
标题翻译：玻璃连续涂层反应器
公开(公告)号：US4524718A
公开(公告)日：1985-06-25
申请号：US521675
申请日：1983-08-10
申请人： Roy G. Gordon
发明人： Roy G. Gordon
IPC分类号： C03C17/22 , C23C16/34 , C23C13/10
CPC分类号： C03C17/225 , C23C16/34 , C03C2217/281 , C03C2218/152
摘要： Apparatus for continuous of mixing two reactants in proximity to an object upon which a reaction product is to be coated continuously and uniformly means is provided for maintaining reactants from premature contact. The reactant-feed holes are placed at a distance above the surface to be coated to optimize the combination of manufacturing practicality and the precision with which the holes can be economically formed.
摘要翻译：用于连续地将两种反应物连续地混合在反应产物将被连续地均匀涂覆的物体附近的装置用于保持反应物过早接触。反应物供给孔被放置在待涂覆表面上方的距离处，以优化制造实用性和可以经济地形成孔的精度的组合。

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