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1. 发明申请

US20120028478A1 VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐和二氧化硅的蒸气沉积
公开(公告)号：US20120028478A1
公开(公告)日：2012-02-02
申请号：US12407556
申请日：2009-03-19
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： H01L21/31
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

2. 发明授权

US06969539B2 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US06969539B2
公开(公告)日：2005-11-29
申请号：US10381628
申请日：2001-09-28
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C23C16/42 , C07F9/09 , C07F9/11 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/314 , H01L21/316
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热至300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基底上，以交替脉冲提供蒸气，产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

3. 发明授权

US08334016B2 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US08334016B2
公开(公告)日：2012-12-18
申请号：US12407556
申请日：2009-03-19
申请人： Roy G. Gordon , Jill S. Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill S. Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C23C16/40
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

4. 发明授权

US07507848B2 Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide 有权
标题翻译：金属氧化物，硅酸盐和磷酸盐以及二氧化硅的气相沉积
公开(公告)号：US07507848B2
公开(公告)日：2009-03-24
申请号：US11199032
申请日：2005-08-08
申请人： Roy G. Gordon , Jill S. Becker , Dennis Hausmann , Seigi Suh
发明人： Roy G. Gordon , Jill S. Becker , Dennis Hausmann , Seigi Suh
IPC分类号： C07F7/00 , C07F11/00 , C23C16/00
CPC分类号： H01L21/02148 , C01B13/34 , C01B25/30 , C01B25/36 , C01B33/126 , C01B33/20 , C01B33/26 , C01G25/02 , C01G27/02 , C01G35/00 , C07F9/091 , C07F9/11 , C23C16/30 , C23C16/40 , C23C16/401 , C23C16/402 , C23C16/405 , C23C16/455 , C23C16/45525 , C23C16/45531 , C23C16/45553 , H01L21/02159 , H01L21/02205 , H01L21/02271 , H01L21/3141 , H01L21/31612 , H01L28/40 , H01L29/0684 , H01L29/42364 , H01L29/517
摘要： Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
摘要翻译：金属硅酸盐或磷酸盐通过烷氧基硅烷醇或烷基磷酸盐的蒸气与活性金属酰胺，烷基或醇盐的反应沉积在加热的底物上。例如，三（叔丁氧基）硅烷醇的蒸气与四（乙基甲基氨基）铪的蒸气反应，在加热到300℃的表面上沉积硅酸铪。产物膜在整个反应器中具有非常均匀的化学计量。类似地，二异丙基磷酸盐的蒸气与双（乙基二甲基甲硅烷基）氨基锂的蒸气反应，以将磷酸锂膜沉积在加热至250℃的基板上。以交替脉冲提供蒸气产生具有非常均匀的厚度分布和优异的台阶覆盖率的相同组成。

5. 发明授权

US07560581B2 Vapor deposition of tungsten nitride 有权
标题翻译：氮化钨的蒸镀
公开(公告)号：US07560581B2
公开(公告)日：2009-07-14
申请号：US10520456
申请日：2003-07-09
申请人： Roy G. Gordon , Seigi Suh , Jill Becker
发明人： Roy G. Gordon , Seigi Suh , Jill Becker
IPC分类号： C07F11/00 , C23C16/34 , H01L21/44
CPC分类号： C23C16/45553 , C07F11/005 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45542 , H01L21/28088 , H01L21/28562 , H01L21/76841 , H01L28/60 , H01L29/4966
摘要： Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.
摘要翻译：通过二（烷基酰亚胺）双（二烷基酰胺）二氧化钨和路易斯碱或氢等离子体的蒸气的反应，将氮化钨膜沉积在加热的基底上。例如，双（叔丁基酰亚胺）双（二甲基酰胺）二氧化钨和氨气的蒸气以加热到300℃的表面的交替剂量供应，产生具有非常均匀厚度的氮化钨涂层，并且在具有纵横比的孔中具有优异的台阶覆盖至少40：1。这些膜是金属和良好的电导体。在微电子学中的适用应用包括铜和电容器电极的扩散障碍。类似的方法沉积氮化钼，其适合于在X射线反射镜中与硅交替的层。

6. 发明授权

US08008743B2 Vapor deposition of silicon dioxide nanolaminates 有权
标题翻译：二氧化硅纳米层压板的气相沉积
公开(公告)号：US08008743B2
公开(公告)日：2011-08-30
申请号：US10951464
申请日：2004-09-27
申请人： Roy G. Gordon , Jill Becker , Dennis Hausmann
发明人： Roy G. Gordon , Jill Becker , Dennis Hausmann
IPC分类号： H01L21/70
CPC分类号： C23C16/45534 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/403 , C23C16/45525 , C23C16/45529 , C23C16/45555
摘要： This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches.
摘要翻译：本发明涉及在固体基底上薄膜沉积的材料和方法。通过含铝化合物与硅烷醇的反应将二氧化硅/氧化铝纳米层压材料沉积在加热的基底上。纳米层压板具有非常均匀的厚度和在具有40:1以上的纵横比的孔中的优异的台阶覆盖。这些胶片是透明和良好的电绝缘体。本发明还涉及用于生产用于微电子器件中的电导体的绝缘中的改进的多孔电介质材料的材料和方法，特别是通过用于生产半孔电介质材料的材料和工艺，其中表面孔隙率被显着减少或去除，同时保持内部孔隙度以保持整个介电材料的期望的低k值。本发明还可用于选择性地填充具有低k介电材料的窄沟槽，同时避免任何电介质沉积在沟槽外部的表面区域上。

7. 发明授权

US08796483B2 Cyclic metal amides and vapor deposition using them 有权
标题翻译：使用它们的环状金属酰胺和气相沉积
公开(公告)号：US08796483B2
公开(公告)日：2014-08-05
申请号：US13077241
申请日：2011-03-31
申请人： Roy G. Gordon , Adam S. Hock , Jaeyeong Heo , Prasert Sinsermsuksakul
发明人： Roy G. Gordon , Adam S. Hock , Jaeyeong Heo , Prasert Sinsermsuksakul
IPC分类号： C07F7/22 , C07F7/24 , C23C16/00
CPC分类号： C07F7/003 , C23C16/18 , C23C16/305 , C23C16/407 , C23C16/45553
摘要： Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.
摘要翻译：公开了含有锡或铅的新型环状酰胺。这些环状酰胺可用于锡或铅及其氧化物，硫化物，硒化物，氮化物，磷化物，碳化物，硅化物或硼化物或其它化合物的原子层沉积或化学气相沉积。通过环状锡酰胺蒸气和H 2 O 2或NO 2作为氧源反应沉积氧化锡（IV），SnO 2。即使在非常狭窄的孔或沟槽内，这些膜也具有高纯度，平滑度，透明度，导电性，密度和均匀的厚度。沉积温度对于热敏基材如塑料来说足够低。这些膜的合适应用包括显示器，发光二极管，太阳能电池和气体传感器。使用铝掺杂SnO2以降低其导电性，使得材料适合作为电子倍增器或透明晶体管中的有源半导体层。沉积使用相同的锡前体和H2S沉积锡一硫化物，SnS，适合太阳能电池的材料。

8. 发明申请

US20120108075A1 Gas-Phase Functionalization of Surfaces of Microelectronic Structures 有权
标题翻译：微电子结构表面气相功能化
公开(公告)号：US20120108075A1
公开(公告)日：2012-05-03
申请号：US13344738
申请日：2012-01-06
申请人： Roy G. Gordon , Damon B. Farmer
发明人： Roy G. Gordon , Damon B. Farmer
IPC分类号： H01L21/30 , B05D5/00 , B05D3/02 , B82Y99/00 , B82Y40/00
CPC分类号： H01L51/0049 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/02 , C01F7/304 , C01P2004/13 , H01L51/057 , H01L51/0595 , Y10S977/734 , Y10S977/755 , Y10S977/842 , Y10S977/847 , Y10S977/89 , Y10T428/2918
摘要： There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.
摘要翻译：提供了通过将表面暴露于至少一种包含非共价结合表面的官能化物质（例如NO 2或CH 3 ONO）的蒸气的表面而提供微电子结构的平坦表面的方法，同时提供化学官能团，以产生官能化表面。功能化表面暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，该稳定层使官能化层抵抗来自平面微电子表面的解吸，同时提供化学官能团。稳定的表面暴露于在稳定的平面微电子表面上沉积材料层的至少一种材料层前体物质。稳定的平面微电子表面可以在小于约700℃的峰值退火温度下退火

9. 发明申请

US20120027937A1 Cyclic Metal Amides and Vapor Deposition Using Them 有权
标题翻译：使用它们的循环金属酰胺和气相沉积
公开(公告)号：US20120027937A1
公开(公告)日：2012-02-02
申请号：US13077241
申请日：2011-03-31
申请人： Roy G. Gordon , Adam S. Hock , Jaeyeong Heo , Prasert Sinsermsuksakul
发明人： Roy G. Gordon , Adam S. Hock , Jaeyeong Heo , Prasert Sinsermsuksakul
IPC分类号： B05D1/38 , C07F7/22 , C07F5/02 , C07F9/02 , C07F7/02 , B05D3/10 , C07F7/24
CPC分类号： C07F7/003 , C23C16/18 , C23C16/305 , C23C16/407 , C23C16/45553
摘要： Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.
摘要翻译：公开了含有锡或铅的新型环状酰胺。这些环状酰胺可用于锡或铅及其氧化物，硫化物，硒化物，氮化物，磷化物，碳化物，硅化物或硼化物或其它化合物的原子层沉积或化学气相沉积。通过环状锡酰胺蒸气和H 2 O 2或NO 2作为氧源反应沉积氧化锡（IV），SnO 2。即使在非常狭窄的孔或沟槽内，这些膜也具有高纯度，平滑度，透明度，导电性，密度和均匀的厚度。沉积温度对于热敏基材如塑料来说足够低。这些膜的合适应用包括显示器，发光二极管，太阳能电池和气体传感器。使用铝掺杂SnO2以降低其导电性，使得材料适合作为电子倍增器或透明晶体管中的有源半导体层。沉积使用相同的锡前体和H2S沉积锡一硫化物，SnS，适合太阳能电池的材料。

10. 发明申请

US20100320437A1 Gas-phase functionalization of surfaces including carbon-based surfaces 有权
标题翻译：包括碳基表面在内的表面的气相官能化
公开(公告)号：US20100320437A1
公开(公告)日：2010-12-23
申请号：US12157337
申请日：2008-06-10
申请人： Roy G. Gordon , Damon B. Farmer
发明人： Roy G. Gordon , Damon B. Farmer
IPC分类号： H01L29/775 , B05D5/12 , B32B9/00 , H01L21/30
CPC分类号： H01L51/0049 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B2202/02 , C01F7/304 , C01P2004/13 , H01L51/057 , H01L51/0595 , Y10S977/734 , Y10S977/755 , Y10S977/842 , Y10S977/847 , Y10S977/89 , Y10T428/2918
摘要： The invention provides methods functionalizing a planar surface of a graphene layer, a graphite surface, or microelectronic structure. The graphene layer, graphite surface, or planar microelectronic structure surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the graphene layer, a graphite surface, or planar microelectronic surface while providing a functionalization layer of chemically functional groups, to produce a functionalized graphene layer, graphite surface, or planar microelectronic surface.
摘要翻译：本发明提供了使石墨烯层，石墨表面或微电子结构的平坦表面官能化的方法。石墨烯层，石墨表面或平面微电子结构表面暴露于至少一种蒸气，其包括至少一种与石墨烯层，石墨表面或平面微电子表面非共价结合的官能化物质，同时提供化学上的官能化层官能团，以产生功能化石墨烯层，石墨表面或平面微电子表面。

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