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1. 发明授权

US06713386B1 Method of preventing resist poisoning in dual damascene structures 有权
公开(公告)号：US06713386B1
公开(公告)日：2004-03-30
申请号：US10025304
申请日：2001-12-19
申请人： Rongxiang Hu , Yongbae Kim , Sang-Yun Lee , Hiroaki Takikawa , Shumay Dou , Sarah Neuman , Philippe Schoenborn , Keith Chao , Dilip Vijay , Kai Zhang , Masaichi Eda
发明人： Rongxiang Hu , Yongbae Kim , Sang-Yun Lee , Hiroaki Takikawa , Shumay Dou , Sarah Neuman , Philippe Schoenborn , Keith Chao , Dilip Vijay , Kai Zhang , Masaichi Eda
IPC分类号： H01L214763
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76807 , H01L21/76808 , H01L21/76826 , H01L21/76829
摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.

2. 发明授权

US06969683B2 Method of preventing resist poisoning in dual damascene structures 有权
标题翻译：防止双重镶嵌结构抗蚀剂中毒的方法
公开(公告)号：US06969683B2
公开(公告)日：2005-11-29
申请号：US10750348
申请日：2003-12-31
申请人： Rongxiang Hu , Yongbae Kim , Sang-Yun Lee , Hiroaki Takikawa , Shumay Dou , Sarah Neuman , Philippe Schoenborn , Keith Chao , Dilip Vijay , Kai Zhang , Masaichi Eda
发明人： Rongxiang Hu , Yongbae Kim , Sang-Yun Lee , Hiroaki Takikawa , Shumay Dou , Sarah Neuman , Philippe Schoenborn , Keith Chao , Dilip Vijay , Kai Zhang , Masaichi Eda
IPC分类号： H01L21/311 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76831 , H01L21/31144 , H01L21/76807 , H01L21/76808 , H01L21/76826 , H01L21/76829
摘要： A method for forming a dual damascene interconnect in a dielectric layer is provided. Generally, a first aperture is etched in the dielectric. A poison barrier layer is formed over part of the dielectric, which prevents resist poisoning. A patterned mask is formed over the poison barrier layer. A second aperture is etched into the dielectric layer, wherein at least part of the first aperture shares the same area as at least part of the second aperture.
摘要翻译：提供了一种在电介质层中形成双镶嵌互连的方法。通常，在电介质中蚀刻第一孔。在电介质的一部分上形成中毒阻挡层，防止抗蚀剂中毒。在毒物屏障层上形成图案化掩模。第二孔被蚀刻到电介质层中，其中第一孔的至少一部分具有与第二孔的至少一部分相同的面积。

3. 发明授权

US06686272B1 Anti-reflective coatings for use at 248 nm and 193 nm 有权
标题翻译：抗反射涂层用于248 nm和193 nm
公开(公告)号：US06686272B1
公开(公告)日：2004-02-03
申请号：US10020084
申请日：2001-12-13
申请人： Sang-Yun Lee , Masaichi Eda , Hongqiang Lu , Wei-Jen Hsia , Wilbur G. Catabay , Hiroaki Takikawa , Yongbae Kim
发明人： Sang-Yun Lee , Masaichi Eda , Hongqiang Lu , Wei-Jen Hsia , Wilbur G. Catabay , Hiroaki Takikawa , Yongbae Kim
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/0276 , H01L21/3148 , H01L21/31633 , H01L21/76826 , H01L21/76829 , H01L21/76835 , Y10S438/931 , Y10S438/952
摘要： The present invention is directed to a silicon carbide anti-reflective coating (ARC) and a silicon oxycarbide ARC. Another embodiment is directed to a silicon oxycarbide ARC that is treated with oxygen plasma. The invention includes method embodiments for forming silicon carbide layers and silicon oxycarbide layers as ARC's on a semiconductor substrate surface. Particularly, the methods include introducing methyl silane materials into a process chamber where they are ignited as plasma and deposited onto the substrate surface as silicon carbide. Another method includes introducing methyl silane precursor materials with an inert carrier gas into the process chamber with oxygen. These materials are ignited into a plasma, and silicon oxycarbide material is deposited onto the substrate. By regulating the oxygen flow rate, the optical properties of the silicon oxycarbide layer can be adjusted. In another embodiment, the silicon oxycarbide layer can be treated with oxygen plasma.
摘要翻译：本发明涉及碳化硅抗反射涂层（ARC）和碳氧化硅ARC。另一个实施方案涉及用氧等离子体处理的碳氧化硅ARC。本发明包括在半导体衬底表面上形成碳化硅层和碳氧化硅层作为ARC的方法实施例。特别地，所述方法包括将甲基硅烷材料引入处理室中，其中它们被等离子体点燃并作为碳化硅沉积在基板表面上。另一种方法包括将具有惰性载气的甲基硅烷前体材料用氧气引入到处理室中。将这些材料点燃到等离子体中，并将碳氧化硅材料沉积到基底上。通过调节氧气流速，可以调节碳硅氧烷层的光学性能。在另一个实施方案中，可以用氧等离子体处理碳氧化硅层。

4. 发明申请

US20220392913A1 Structures for Novel Three-Dimensional Nonvolatile Memory 有权
公开(公告)号：US20220392913A1
公开(公告)日：2022-12-08
申请号：US17340371
申请日：2021-06-07
申请人： Sang-Yun Lee
发明人： Sang-Yun Lee
IPC分类号： H01L27/11573 , H01L23/535 , H01L27/11521 , H01L27/11551 , H01L27/11526 , H01L27/11568 , H01L27/11578
摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

5. 发明申请

US20220392910A1 Methods for Novel Three-Dimensional Nonvolatile Memory 有权
公开(公告)号：US20220392910A1
公开(公告)日：2022-12-08
申请号：US17347237
申请日：2021-06-14
申请人： Sang-Yun Lee
发明人： Sang-Yun Lee
IPC分类号： H01L27/11529 , H01L27/11551 , H01L27/11573 , H01L27/11578 , G11C5/06 , H01L23/48
摘要： Disclosed are novel structures and methods for 3D NVM built with vertical transistors above a logic layer. A first embodiment has a conductive film under the transistors and serving as a common node in a memory block. The conductive film may be from a semiconductor layer used to build the transistors. Metal lines are disposed above the transistors for connection through 3D vias to underlying circuitry. Contact plugs may be formed between transistors and metal lines. The conductive film may be coupled to underlying circuitry through contacts on the conductive film or through interconnect vias underneath the film. A second embodiment has conductive lines disposed under the transistors. Either of conductive lines and metal lines may serve as source lines and the other as bit lines for the memory. For low parasitic resistances, the conductive lines may be shorted to bypass metal lines residing in underlying logic layer.

6. 发明申请

US20220139918A1 Novel Three-Dimensional DRAM Structures 有权
公开(公告)号：US20220139918A1
公开(公告)日：2022-05-05
申请号：US17084420
申请日：2020-10-29
申请人： Sang-Yun Lee
发明人： Sang-Yun Lee
IPC分类号： H01L27/108 , H01L29/78
摘要： Novel three-dimensional DRAM structures are disclosed, together with methods of making the same. Each DRAM cell comprises a vertical transistor and a storage capacitor stacked vertically. Storage capacitors are arranged in a rectangular pattern in the array of DRAM cells. This arrangement improves the area efficiency of storage capacitors over honeycomb type. A first embodiment of the present disclosure uses cup-shaped storage capacitors. The exterior of the cup as well as the interior may contribute to the capacitance. In a second embodiment, a single capacitor pillar forms the internal electrode of each storage capacitor. A third embodiment employs double-pillar storage capacitors. Common to all embodiments are options to dispose contact plugs between vertical transistors and storage capacitors, dispose an etch-stop layer over the gate of vertical transistors, dispose one or more mesh layers for storage capacitors, and widen semiconductor pillars within available space in bit-line direction.

7. 发明申请

US20220130973A1 Structures of Gate Contact Formation for Vertical Transistors 有权
公开(公告)号：US20220130973A1
公开(公告)日：2022-04-28
申请号：US17083026
申请日：2020-10-28
申请人： Sang-Yun Lee
发明人： Sang-Yun Lee
IPC分类号： H01L29/423 , H01L27/1157 , H01L27/11582 , H01L27/108 , H01L27/11573 , H01L25/18 , H01L29/40 , H01L29/66 , H01L29/792 , H01L29/78
摘要： Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.

8. 发明授权

US09494065B2 Apparatus for processing exhaust fluid 有权
标题翻译：废气处理装置
公开(公告)号：US09494065B2
公开(公告)日：2016-11-15
申请号：US13976328
申请日：2011-12-27
申请人： Sang-Yun Lee , Myung Keun Noh , Heaungshig Oh
发明人： Sang-Yun Lee , Myung Keun Noh , Heaungshig Oh
IPC分类号： F01N3/08 , B01D53/32 , H01L21/67 , H05H1/24
CPC分类号： F01N3/0892 , B01D53/32 , B01D2257/2025 , B01D2257/2027 , B01D2257/2047 , B01D2258/0216 , B01D2259/818 , H01L21/67017 , H05H1/2406 , H05H2001/2456 , H05H2245/1215
摘要： Provided is an apparatus for processing exhaust fluid in which a fluid generated in a process chamber of an apparatus for manufacturing a semiconductor, a display panel, or a solar cell is ejected to the outside. The apparatus for processing exhaust fluid includes: a vacuum pump that is connected to the process chamber, vacuumizes the inside of the process chamber, and ejects the fluid generated in the process chamber to the outside; and a plasma reactor in which plasma is formed and the fluid generated in the process chamber decomposes, wherein the plasma reactor includes: an insulating conduit that is provided between the process chamber and the vacuum pump and provides a space in which the fluid decomposes; at least one electrode unit that is provided on the outer circumferential surface of the conduit and receives a voltage to form the plasma; a buffer unit that is formed of an electrically conductive elastic substance and is disposed between the conduit and the electrode unit to attach the conduit and the electrode unit closely together; and an external pipe into which the conduit, electrode unit and buffer unit are inserted with sealing flanges provided on both end portions of the conduit and external pipe to seal a space between the conduit and the external pipe to prevent fluid process by-products from leaking out should the conduit crack or is damaged.
摘要翻译：本发明提供一种处理废液的装置，其中在半导体制造装置，显示面板或太阳能电池的处理室中产生的流体喷射到外部。用于处理废气流体的装置包括：真空泵，其连接到处理室，对处理室的内部进行真空化，并将处理室中产生的流体喷射到外部; 以及其中形成等离子体并且在处理室中产生的流体分解的等离子体反应器，其中等离子体反应器包括：设置在处理室和真空泵之间并提供流体分解的空间的绝缘导管; 至少一个电极单元，其设置在所述导管的外周面上并接收电压以形成所述等离子体; 缓冲单元，其由导电弹性物质形成并且设置在所述导管和所述电极单元之间，以将所述导管和所述电极单元紧密地附接在一起; 以及管道，电极单元和缓冲单元插入其中的外管，其中设置在导管和外管的两端部上的密封凸缘以密封导管和外管之间的空间，以防止流体加工副产物泄漏如果管道破裂或损坏。

9. 发明授权

US09037514B2 Authentication for service server in wireless internet and settlement using the same 有权
标题翻译：无线互联网和结算服务服务器的认证使用相同
公开(公告)号：US09037514B2
公开(公告)日：2015-05-19
申请号：US13337931
申请日：2011-12-27
申请人： Jun-Won Choi , Joo-Mun Lee , Sang-Yun Lee , Myung-Sung Lee , Jae-Boo Chung
发明人： Jun-Won Choi , Joo-Mun Lee , Sang-Yun Lee , Myung-Sung Lee , Jae-Boo Chung
IPC分类号： G06Q20/02 , G06F21/44 , G06Q20/32 , G06Q20/40 , H04W12/06 , H04L29/06
CPC分类号： G06F21/445 , G06F2221/2119 , G06Q20/02 , G06Q20/32 , G06Q20/322 , G06Q20/40 , G06Q20/4014 , H04L63/0823 , H04L63/0869 , H04L63/126 , H04L63/1483 , H04W12/06
摘要： The present invention is directed to a method of payment using a wireless Internet comprising the step of storing individual identification information provided from a user in an authentication server; authenticating the service server when request of the stored individual identification information is received from the service server, and transmitting the stored individual identification information to the service server when the authentication has succeeded; transmitting a message of requesting a service access to a mobile terminal of the user from the service server; and transmitting the individual identification information sent from the authentication server to the mobile terminal by means of a transmitting query of the individual identification information from the mobile terminal.
摘要翻译：本发明涉及一种使用无线因特网的支付方法，包括以下步骤：将从用户提供的个人识别信息存储在认证服务器中; 当从所述服务服务器接收到所存储的个人识别信息的请求时对所述服务服务器进行认证，并且当所述认证成功时将所存储的个人识别信息发送到所述服务服务器; 从所述服务服务器发送请求对所述用户的移动终端的服务访问的消息; 以及通过来自移动终端的个人识别信息的发送查询，发送从认证服务器发送到移动终端的个人识别信息。

10. 发明授权

US09011708B2 Thermal insulator using closed cell expanded perlite 有权
标题翻译：隔热材料采用闭孔膨胀珍珠岩
公开(公告)号：US09011708B2
公开(公告)日：2015-04-21
申请号：US13582726
申请日：2011-03-03
申请人： Bum-Gyu Baek , Sang-Yun Lee
发明人： Bum-Gyu Baek , Sang-Yun Lee
IPC分类号： H01B3/02 , H01B3/48 , C04B38/00 , C04B14/38 , C04B26/02 , C04B14/18 , C04B28/02 , B28B23/00 , C04B28/26 , C04B111/28
CPC分类号： C04B26/02 , B28B23/0087 , C04B14/185 , C04B28/02 , C04B28/26 , C04B2111/28 , Y02W30/94 , Y10S106/02 , C04B20/1051 , C04B20/0048 , C04B14/42 , C04B38/0061 , C04B14/022 , C04B14/4637 , C04B18/146 , C04B40/0071 , C04B40/0263 , C04B14/46 , C04B14/386
摘要： The present invention relates to a thermal insulator using closed cell expanded perlite. The thermal insulator using closed cell expanded perlite of the present invention includes: expanded perlite 10 to 84 wt %ç, including dried and expanded perlite ore particles, having a surface with a closed cell shape, as an active ingredient; a liquid binder 15 to 85 wt %; and a reinforcing fiber 0.25 to 5 wt %. Accordingly, the present invention provides a thermal insulator, which enhances the rigidity of expanded perlite, minimizes porosity and gaps between the expanded perlite particles, by reducing compression ratio during compression molding, which results in lower density, improves constructability by lowering thermal conductivity, reduces material and energy costs and can reduce the area required for equipment installation by reducing the thickness of the thermal insulator.
摘要翻译：本发明涉及一种使用闭孔膨胀珍珠岩的绝热体。使用本发明的闭孔膨胀珍珠岩的热绝缘体包括：膨胀珍珠岩10〜84重量％ç，包括具有闭孔形状的表面作为活性成分的干燥膨胀珍珠岩矿石颗粒; 15〜85重量％的液体粘合剂; 和0.25〜5重量％的增强纤维。因此，本发明提供了一种隔热材料，其通过降低压缩成型时的压缩比来提高膨胀珍珠岩的刚性，使膨胀珍珠岩颗粒之间的孔隙率和间隙最小化，这导致较低的密度，通过降低热导率来改善构造性，减少材料和能源成本，并且可以通过减小绝热体的厚度来减少设备安装所需的面积。

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