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1. 发明授权

US06849544B2 Forming a conductive structure in a semiconductor device 失效
标题翻译：在半导体器件中形成导电结构
公开(公告)号：US06849544B2
公开(公告)日：2005-02-01
申请号：US10454218
申请日：2003-06-04
申请人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
发明人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
IPC分类号： H01L21/28 , H01L21/321 , H01L29/49 , H01L21/44
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/2807 , H01L21/32105
摘要： A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
摘要翻译：用于半导体器件的导电结构包括多层结构。第一层包括含硅的材料，例如多晶硅和锗锗。在第一层上形成阻挡层，阻挡层包括金属硅化物或金属硅化物氮化物。在阻挡层上形成顶部导电层。顶部导电层可以包括金属或金属硅化物。可以进行选择性氧化以减少包含多层结构的结构中所选材料的氧化量，例如多层导电结构。选择性氧化在单晶片快速热处理系统中进行，其中使用包括氢的所选择的环境来确保所选择的材料如钨或金属氮化物的低氧化。

2. 发明授权

US06362086B1 Forming a conductive structure in a semiconductor device 有权
公开(公告)号：US06362086B1
公开(公告)日：2002-03-26
申请号：US09397763
申请日：1999-09-15
申请人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
发明人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
IPC分类号： H01L214763
摘要： A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal suicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.

3. 发明授权

US06291868B1 Forming a conductive structure in a semiconductor device 失效
标题翻译：在半导体器件中形成导电结构
公开(公告)号：US06291868B1
公开(公告)日：2001-09-18
申请号：US09031407
申请日：1998-02-26
申请人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
发明人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
IPC分类号： H01L2976
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/2807 , H01L21/32105
摘要： A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
摘要翻译：用于半导体器件的导电结构包括多层结构。第一层包括含硅的材料，例如多晶硅和锗锗。在第一层上形成阻挡层，阻挡层包括金属硅化物或金属硅化物氮化物。在阻挡层上形成顶部导电层。顶部导电层可以包括金属或金属硅化物。可以进行选择性氧化以减少包含多层结构的结构中所选材料的氧化量，例如多层导电结构。选择性氧化在单晶片快速热处理系统中进行，其中使用包括氢的所选择的环境来确保所选择的材料如钨或金属氮化物的低氧化。

4. 发明授权

US06596595B1 Forming a conductive structure in a semiconductor device 有权
标题翻译：在半导体器件中形成导电结构
公开(公告)号：US06596595B1
公开(公告)日：2003-07-22
申请号：US09620442
申请日：2000-07-20
申请人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
发明人： Ronald A. Weimer , Yongjun Jeff Hu , Pai Hung Pan , Deepa Ratakonda , James Beck , Randhir P. S. Thakur
IPC分类号： H01L21336
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/2807 , H01L21/32105
摘要： A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
摘要翻译：用于半导体器件的导电结构包括多层结构。第一层包括含硅的材料，例如多晶硅和锗锗。在第一层上形成阻挡层，阻挡层包括金属硅化物或金属硅化物氮化物。在阻挡层上形成顶部导电层。顶部导电层可以包括金属或金属硅化物。可以进行选择性氧化以减少包含多层结构的结构中所选材料的氧化量，例如多层导电结构。选择性氧化在单晶片快速热处理系统中进行，其中使用包括氢的所选择的环境来确保所选择的材料如钨或金属氮化物的低氧化。

5. 发明授权

US5416045A Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films 失效
标题翻译：在半导体晶片上化学气相沉积氮化钛层的方法和退火锡膜的方法
公开(公告)号：US5416045A
公开(公告)日：1995-05-16
申请号：US19084
申请日：1993-02-18
申请人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
发明人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
IPC分类号： C30B33/00 , H01L21/768 , H01L21/324
CPC分类号： H01L21/76856 , C30B29/38 , C30B33/00 , H01L21/76843 , Y10S438/909
摘要： A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl.sub.4, NH.sub.3 and N.sub.2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and NH.sub.3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500.degree. C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580.degree. C. to about 700.degree. C.; b) exposing the wafer to NH.sub.3 gas at a temperature from about 580.degree. C. to about 700.degree. C. for at least about 5 seconds to drive chlorine from the TiN film; c) rapid thermal processing the wafer to a temperature of at least about 780.degree. C.; and d) exposing the wafer to N.sub.2 gas at a temperature of at least about 780.degree. C. for at least about 10 seconds.
摘要翻译：在化学气相沉积反应器内的半导体晶片上化学气相沉积氮化钛层的方法包括：a）将晶片定位在化学气相沉积反应器内; b）将气态TiCl4，NH3和N2注入反应器内; 和c）将反应器保持在选择的压力和选定的温度下，这对于使TiCl 4和NH 3反应在晶片上沉积包含氮化钛的均匀的膜是有效的，所选择的温度小于或等于约500℃。向外暴露的TiN膜，通过以下顺序的步骤对晶片进行退火：a）将具有向外暴露的TiN膜的晶片快速热处理至约580℃至约700℃的温度; b）在约580℃至约700℃的温度下将晶片暴露于NH 3气体至少约5秒以从TiN膜驱动氯; c）将晶片快速热处理至至少约780℃的温度; 和d）在至少约780℃的温度下将晶片暴露于N 2气体至少约10秒。

6. 发明申请

US20100317958A1 INTEGRATED WIRELESS PATCH FOR PHYSIOLOGICAL MONITORING 有权
标题翻译：用于生理监测的集成无线电缆
公开(公告)号：US20100317958A1
公开(公告)日：2010-12-16
申请号：US12601373
申请日：2008-05-23
申请人： James Beck , Venkateswara R. Sattiraju , Ali M. Niknejad , Louis C. Yun , Randall Lee , Surendar Magar , Lois M. Fisher
发明人： James Beck , Venkateswara R. Sattiraju , Ali M. Niknejad , Louis C. Yun , Randall Lee , Surendar Magar , Lois M. Fisher
IPC分类号： A61B5/0408 , A61B5/04
CPC分类号： A61B5/04085 , A61B5/0006 , A61B5/0031 , A61B5/0205 , A61B5/04012 , A61B5/0422 , A61B5/0428 , A61B5/0476 , A61B5/0478 , A61B5/0488 , A61B5/0492 , A61B5/14532 , A61B5/1486
摘要： A sensor system in accordance with the present invention comprises a plane member, a plurality of electrodes within the plane member, adapted to contact a human body to detect and monitor human generated voltages. The sensor can be applied to monitor a variety of applications relating to health, disease progression, fitness and wellness. Some of the specific applications include the monitoring of ECG, EEG, EMG, glucose, electrolytes, body hydration, dehydration, tissue state and wounds. Various aspects of the invention are shown by illustrating certain embodiments. Many other embodiments can be used to implement the invented schemes.
摘要翻译：根据本发明的传感器系统包括平面构件，平面构件内的多个电极，适于接触人体以检测和监测人类产生的电压。该传感器可用于监测与健康，疾病进展，健身和健康有关的各种应用。一些具体应用包括监测ECG，EEG，EMG，葡萄糖，电解质，身体水合，脱水，组织状态和伤口。通过说明某些实施例来示出本发明的各个方面。可以使用许多其它实施例来实现本发明的方案。

7. 发明申请

US20070293483A1 Acetyl 2-hydroxy-1, 3-diaminoalkanes 失效
标题翻译：乙酰基2-羟基-1,3-二氨基烷烃
公开(公告)号：US20070293483A1
公开(公告)日：2007-12-20
申请号：US11447789
申请日：2006-06-06
申请人： Varghese John , Michel Maillard , James Beck , Eric Baldwin , Robert Hughes , Shon Pulley , Ruth TenBrink
发明人： Varghese John , Michel Maillard , James Beck , Eric Baldwin , Robert Hughes , Shon Pulley , Ruth TenBrink
IPC分类号： A61K31/54 , A61P25/28 , C07D279/04
CPC分类号： C07C233/36 , C07C235/10 , C07C235/74 , C07C271/24 , C07C311/05 , C07C327/30 , C07C2601/02 , C07C2601/08 , C07C2601/14 , C07C2602/10 , C07D209/14 , C07D213/38 , C07D213/64 , C07D215/233 , C07D215/38 , C07D215/42 , C07D215/46 , C07D217/22 , C07D233/61 , C07D233/64 , C07D237/08 , C07D237/14 , C07D239/26 , C07D239/38 , C07D241/12 , C07D249/08 , C07D261/08 , C07D265/02 , C07D277/28 , C07D295/135 , C07D307/52 , C07D309/14 , C07D311/68 , C07D311/74 , C07D333/20 , C07D333/22 , C07D335/06 , C07D405/04 , C07D407/06 , C07D409/12 , C07D495/04
摘要： Disclosed are compounds of the formula: where variables Z, X, R15, R2, R3, and Rc are defined herein. Compounds disclosed herein are inhibitors of the beta-secretase enzyme and are therefore useful in the treatment of Alzheimer's disease and other diseases characterized by deposition of A beta peptide in a mammal.
摘要翻译：公开了下式的化合物：其中变量Z，X，R 15，R 2，R 3和R c， / SUB>。本文公开的化合物是β-分泌酶的抑制剂，因此可用于治疗阿尔茨海默氏病和以哺乳动物中Aβ肽沉积为特征的其它疾病。

8. 发明申请

US20070213316A1 N,N'-substituted-1,3-diamino-2-hydroxypropane derivatives 失效
标题翻译： N，N'-取代-1,3-二氨基-2-羟基丙烷衍生物
公开(公告)号：US20070213316A1
公开(公告)日：2007-09-13
申请号：US11636903
申请日：2006-12-11
申请人： Varghese John , Michel Maillard , Barbara Jagodzinska , James Beck , Andrea Gailunas , John Freskos , John Mickelson , Lakshman Samala , Jennifer Sealy , Ruth TenBrink , Lawrence Fang , Roy Hom
发明人： Varghese John , Michel Maillard , Barbara Jagodzinska , James Beck , Andrea Gailunas , John Freskos , John Mickelson , Lakshman Samala , Jennifer Sealy , Ruth TenBrink , Lawrence Fang , Roy Hom
IPC分类号： A61K31/553 , A61K31/554 , A61K31/55 , A61K31/54 , A61K31/5377 , A61K31/275 , A61K31/4965
CPC分类号： C07D263/32 , C07C233/36 , C07C233/40 , C07C233/58 , C07C233/78 , C07C235/20 , C07C235/50 , C07C235/74 , C07C237/04 , C07C237/06 , C07C237/08 , C07C237/22 , C07C237/42 , C07C251/38 , C07C255/58 , C07C271/28 , C07C271/44 , C07C311/08 , C07C311/16 , C07C311/17 , C07C311/18 , C07C311/19 , C07C311/20 , C07C311/21 , C07C311/37 , C07C317/46 , C07C317/50 , C07C323/60 , C07C323/62 , C07C323/65 , C07C2601/02 , C07C2601/08 , C07C2601/14 , C07D207/267 , C07D207/27 , C07D209/42 , C07D211/58 , C07D211/60 , C07D211/96 , C07D213/71 , C07D213/80 , C07D213/82 , C07D213/85 , C07D215/36 , C07D215/42 , C07D215/48 , C07D215/56 , C07D217/22 , C07D231/14 , C07D231/38 , C07D233/84 , C07D233/90 , C07D237/14 , C07D239/28 , C07D239/42 , C07D239/48 , C07D241/20 , C07D241/24 , C07D241/44 , C07D243/08 , C07D249/06 , C07D249/10 , C07D251/46 , C07D251/54 , C07D257/04 , C07D257/06 , C07D261/08 , C07D261/14 , C07D261/18 , C07D263/34 , C07D263/48 , C07D263/54 , C07D263/58 , C07D265/36 , C07D271/08 , C07D271/12 , C07D275/06 , C07D277/30 , C07D277/36 , C07D277/56 , C07D277/68 , C07D277/82 , C07D279/16 , C07D285/06 , C07D285/10 , C07D285/135 , C07D295/155 , C07D295/185 , C07D295/192 , C07D295/26 , C07D307/20 , C07D307/46 , C07D307/68 , C07D307/84 , C07D307/86 , C07D307/91 , C07D311/04 , C07D333/22 , C07D333/32 , C07D333/34 , C07D333/38 , C07D333/62 , C07D333/68 , C07D335/06 , C07D401/04 , C07D405/12 , C07D409/04 , C07D411/12 , C07D413/04 , C07D413/12 , C07D417/04 , C07D417/12 , C07D471/04 , C07D473/06 , C07D473/08 , C07D473/16 , C07D487/04 , C07D495/04
摘要： Disclosed are compounds of the formula wherein the variables RN, RC, R1, R25, R2, and R3 are as defined herein. These compounds have activity as inhibitors of beta-secretase and are therefore useful in treating a variety of discorders such as Alzheimer's Disease.
摘要翻译：公开了下式的化合物，其中R 1，R 2，R 1，R 2，R 2，R 2，＆lt; 2＆gt;和＆lt; 3＆gt;如本文所定义。这些化合物具有作为β-分泌酶抑制剂的活性，因此可用于治疗诸如阿尔茨海默氏病之类的各种紊乱。

10. 发明申请

US20060217409A1 Novel 4-phenyl substituted tetrahydroisoquinolines and therapeutic use thereof 失效
标题翻译：新型4-苯基取代的四氢异喹啉及其治疗用途
公开(公告)号：US20060217409A1
公开(公告)日：2006-09-28
申请号：US11438725
申请日：2006-05-22
申请人： James Beck , Anthony Pechulis , Arthur Harms
发明人： James Beck , Anthony Pechulis , Arthur Harms
IPC分类号： A61K31/4743 , C07D498/02
CPC分类号： C07D491/04 , C07D493/04 , C07D495/04
摘要： Compounds are provided that, by way of their selective neurotransmitter binding useful for the treatment of various neurological and psychological disorders, e.g., ADHD. Such compounds are 4-phenyl substituted tetrahydroisoquinolines having the Formula IA, IB, IIA, IIB, IIIA or IIIC as set forth herein.
摘要翻译：提供化合物，其通过其可用于治疗各种神经和心理障碍（例如ADHD）的选择性神经递质结合。这样的化合物是如本文所述的具有式IA，IB，IIA，IIB，IIIA或IIIC的4-苯基取代的四氢异喹啉。

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