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1. 发明授权

US5416045A Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films 失效
标题翻译：在半导体晶片上化学气相沉积氮化钛层的方法和退火锡膜的方法
公开(公告)号：US5416045A
公开(公告)日：1995-05-16
申请号：US19084
申请日：1993-02-18
申请人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
发明人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
IPC分类号： C30B33/00 , H01L21/768 , H01L21/324
CPC分类号： H01L21/76856 , C30B29/38 , C30B33/00 , H01L21/76843 , Y10S438/909
摘要： A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl.sub.4, NH.sub.3 and N.sub.2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and NH.sub.3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500.degree. C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580.degree. C. to about 700.degree. C.; b) exposing the wafer to NH.sub.3 gas at a temperature from about 580.degree. C. to about 700.degree. C. for at least about 5 seconds to drive chlorine from the TiN film; c) rapid thermal processing the wafer to a temperature of at least about 780.degree. C.; and d) exposing the wafer to N.sub.2 gas at a temperature of at least about 780.degree. C. for at least about 10 seconds.
摘要翻译：在化学气相沉积反应器内的半导体晶片上化学气相沉积氮化钛层的方法包括：a）将晶片定位在化学气相沉积反应器内; b）将气态TiCl4，NH3和N2注入反应器内; 和c）将反应器保持在选择的压力和选定的温度下，这对于使TiCl 4和NH 3反应在晶片上沉积包含氮化钛的均匀的膜是有效的，所选择的温度小于或等于约500℃。向外暴露的TiN膜，通过以下顺序的步骤对晶片进行退火：a）将具有向外暴露的TiN膜的晶片快速热处理至约580℃至约700℃的温度; b）在约580℃至约700℃的温度下将晶片暴露于NH 3气体至少约5秒以从TiN膜驱动氯; c）将晶片快速热处理至至少约780℃的温度; 和d）在至少约780℃的温度下将晶片暴露于N 2气体至少约10秒。

2. 发明授权

US5360769A Method for fabricating hybrid oxides for thinner gate devices 失效
标题翻译：制造稀薄栅极器件的杂化氧化物的方法
公开(公告)号：US5360769A
公开(公告)日：1994-11-01
申请号：US991817
申请日：1992-12-17
申请人： Randhir P. S. Thakur , Annette L. Martin , Ralph E. Kauffman
发明人： Randhir P. S. Thakur , Annette L. Martin , Ralph E. Kauffman
IPC分类号： H01L21/28 , H01L21/306 , H01L21/316 , H01L21/02
CPC分类号： H01L21/28211 , H01L21/02046 , H01L21/02131 , H01L21/022 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02312 , H01L21/31662
摘要： A method and system for fabricating semiconductor wafers is disclosed wherein an atomically clean, semiconductor substrate having a surface is provided in a rapid thermal processing chamber. One embodiment involves cleaning the substrate by exposing it to a first gas at a temperature substantially within the range of 850.degree. C. to 1250.degree. C. for approximately 10 to 60 seconds. Subsequently, a coating having a first thickness is formed superjacent the substrate surface by introducing a second gas at a temperature substantially within the range of 850.degree. C. to 1250.degree. C. for approximately 5 to 30 seconds in the chamber. The resultant coating, depending on the gas selected, comprises either SiO.sub.2 or Si-F.Subsequently, the substrate having the coating is exposed to a third gas at a temperature substantially within the range of 900.degree. C. to 1050.degree. C. for approximately 30 minutes to one hour, thereby forming a silicon dioxide layer. The silicon dioxide layer is disposed superjacent the substrate and subjacent the coating. In one embodiment of the invention, this step is performed in a furnace. In an alternate embodiment of the present invention, a transferring device, such as a robot, is employed, using a load lock, to transfer the substrate between the RTP chamber and the furnace without exposing the substrate to atmospheric pressure.
摘要翻译：公开了一种用于制造半导体晶片的方法和系统，其中具有表面的原子干净的半导体衬底设置在快速热处理室中。一个实施例涉及通过在基本上在850℃至1250℃的温度下将其暴露于第一气体约10至60秒来清洁基底。随后，通过在室内基本上在850℃至1250℃的温度范围内引入第二气体约5至30秒钟，在衬底表面的上方形成具有第一厚度的涂层。根据所选择的气体，得到的涂层包含SiO 2或Si-F。随后，将具有涂层的基板在基本上在900℃至1050℃的温度下暴露于第三气体约30分钟至1小时，从而形成二氧化硅层。二氧化硅层设置在衬底的上方并且位于涂层的下方。在本发明的一个实施方案中，该步骤在炉中进行。在本发明的一个替代实施例中，使用诸如机器人之类的转移装置，使用负载锁来将衬底转移到RTP室和炉之间，而不将衬底暴露于大气压力。

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