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    • 6. 发明授权
    • Intrusion protection using stress changes
    • 使用压力变化的入侵保护
    • US08330191B2
    • 2012-12-11
    • US12997576
    • 2009-05-26
    • Romano HoofmanRemco Henricus Wilhelmus PijnenburgYouri Victorovitch Ponomarev
    • Romano HoofmanRemco Henricus Wilhelmus PijnenburgYouri Victorovitch Ponomarev
    • H01L29/84G08B13/14
    • H01L23/576G06F21/87H01L2924/0002H01L2924/00
    • The invention relates to a integrated circuit comprising an electronic circuit integrated on a substrate (5), and further comprising protections means for protection of the electronic circuit (25). The protection means comprise: i) a first strained encapsulation layer (10) being provided on a first side of the substrate (5), wherein the first strained encapsulation layer (10) has a strain (S1) in a direction parallel to the substrate (5), and ii) disabling means (20) arranged for at least partially disabling the electronic circuit (25) under control of a strain change in the substrate (5). The invention further relates to a method of manufacturing such integrated circuit, and to a system comprising such integrated circuit. Such system is selected from a group comprising: a bank-card, a smart-card, a contact-less card and an RFID. All embodiments of the integrated circuit in accordance with the invention provide essentially an alternative tamper protection to the data stored or present in the electronic circuit therein. A first main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by detecting a strain change during tampering and subsequently disabling the electronic circuit. A second main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by designing a stack of strained encapsulation layers, such that tampering causes releasing of strain and thereby mechanical disintegrate (break, delaminate, etc) of the integrated circuit, and thus disabling the electronic circuit.
    • 本发明涉及一种集成电路,其包括集成在基板(5)上的电子电路,并且还包括用于保护电子电路(25)的保护装置。 保护装置包括:i)第一应变封装层(10),设置在基板(5)的第一侧上,其中第一应变封装层(10)在平行于基板的方向上具有应变(S1) (5),以及ii)布置成在所述衬底(5)中的应变变化的控制下至少部分地禁用所述电子电路(25)的禁用装置(20)。 本发明还涉及一种制造这种集成电路的方法,以及包括这种集成电路的系统。 这样的系统从包括银行卡,智能卡,无接触卡和RFID的组中选择。 根据本发明的集成电路的所有实施例基本上为存储或存在于其中的电子电路中的数据提供了替代的篡改保护。 第一主要实施例涉及集成电路,其中通过在篡改期间检测应变变化并随后禁用电子电路来获得篡改保护。 第二主要实施例涉及一种集成电路,其中通过设计应变封装层的堆叠来获得防篡改,使得篡改导致应变释放,从而导致集成电路的机械分解(破坏,分层等),从而导致无效 电子电路。
    • 9. 发明申请
    • INTRUSION PROTECTION USING STRESS CHANGES
    • 使用压力变化的侵入保护
    • US20110089506A1
    • 2011-04-21
    • US12997576
    • 2009-05-26
    • Romano HoofmanRemco Henricus Wilhelmus PijnenburgYouri Victorovitch Ponomarev
    • Romano HoofmanRemco Henricus Wilhelmus PijnenburgYouri Victorovitch Ponomarev
    • H01L29/84G06K19/073H01L21/56
    • H01L23/576G06F21/87H01L2924/0002H01L2924/00
    • The invention relates to a integrated circuit comprising an electronic circuit integrated on a substrate (5), and further comprising protections means for protection of the electronic circuit (25). The protection means comprise: i) a first strained encapsulation layer (10) being provided on a first side of the substrate (5), wherein the first strained encapsulation layer (10) has a strain (S1) in a direction parallel to the substrate (5), and ii) disabling means (20) arranged for at least partially disabling the electronic circuit (25) under control of a strain change in the substrate (5). The invention further relates to a method of manufacturing such integrated circuit, and to a system comprising such integrated circuit. Such system is selected from a group comprising: a bank-card, a smart-card, a contact-less card and an RFID. All embodiments of the integrated circuit in accordance with the invention provide essentially an alternative tamper protection to the data stored or present in the electronic circuit therein. A first main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by detecting a strain change during tampering and subsequently disabling the electronic circuit. A second main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by designing a stack of strained encapsulation layers, such that tampering causes releasing of strain and thereby mechanical disintegrate (break, delaminate, etc) of the integrated circuit, and thus disabling the electronic circuit.
    • 本发明涉及一种集成电路,其包括集成在基板(5)上的电子电路,并且还包括用于保护电子电路(25)的保护装置。 保护装置包括:i)第一应变封装层(10),设置在基板(5)的第一侧上,其中第一应变封装层(10)在平行于基板的方向上具有应变(S1) (5),以及ii)布置成在所述衬底(5)中的应变变化的控制下至少部分地禁用所述电子电路(25)的禁用装置(20)。 本发明还涉及一种制造这种集成电路的方法,以及包括这种集成电路的系统。 这样的系统从包括银行卡,智能卡,无接触卡和RFID的组中选择。 根据本发明的集成电路的所有实施例基本上为存储或存在于其中的电子电路中的数据提供了替代的篡改保护。 第一主要实施例涉及集成电路,其中通过在篡改期间检测应变变化并随后禁用电子电路来获得篡改保护。 第二主要实施例涉及一种集成电路,其中通过设计应变封装层的堆叠来获得防篡改,使得篡改导致应变释放,从而导致集成电路的机械分解(破坏,分层等),从而导致无效 电子电路。
    • 10. 发明申请
    • Method for fabrication of in-laid metal interconnects
    • 埋入式金属互连的制造方法
    • US20110097896A1
    • 2011-04-28
    • US10526422
    • 2003-08-04
    • Roel DaamenViet Nguyen HoangRomano HoofmanGreja Verheijoen
    • Roel DaamenViet Nguyen HoangRomano HoofmanGreja Verheijoen
    • H01L21/768
    • H01L21/7684H01L21/7688
    • The present invention relates to a method for fabrication of in-laid metal interconnects. The method comprises the steps of providing a substrate with a dielectric material (1) on top thereof, depositing a protection layer (2) on top of the dielectric material, depositing a sacrificial layer (7) on top of the protection layer, the sacrificial layer having a mechanical strength that is lower than the mechanical strength of the protection layer, making an opening (3) through the sacrificial layer, through the protection layer and into the dielectric material, depositing a barrier layer (4) in the opening and on the sacrificial layer, depositing metal material (5) on the barrier layer, the metal material filling the opening, removing portions of the metal material existing beyond the opening by means of polishing, and removing the barrier layer and the sacrificial layer in one polishing step.
    • 本发明涉及一种内置金属互连的制造方法。 该方法包括以下步骤:在其顶部提供介电材料(1)的基底,在电介质材料的顶部上沉积保护层(2),在保护层的顶部上沉积牺牲层(7) 具有低于保护层的机械强度的机械强度的层,通过保护层形成通过牺牲层的开口(3)并进入电介质材料,在开口中沉积阻挡层(4) 牺牲层,在阻挡层上沉积金属材料(5),填充开口的金属材料,通过抛光去除存在于开口之外的金属材料的部分,以及在一个抛光步骤中去除阻挡层和牺牲层 。