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    • 2. 发明授权
    • Capacitive sensor, integrated circuit, electronic device and method
    • 电容式传感器,集成电路,电子设备及方法
    • US08779781B2
    • 2014-07-15
    • US13438716
    • 2012-04-03
    • Viet Hoang NguyenRoel DaamenAxel NackaertsPascal Bancken
    • Viet Hoang NguyenRoel DaamenAxel NackaertsPascal Bancken
    • G01R27/26
    • G01N27/223G01N27/226
    • A sensor for sensing an analyte includes capacitive elements, each having a pair of electrodes separated by a dielectric wherein the dielectric constant of the dielectric of at least one of the capacitive elements is sensitive to the analyte, the sensor further including a comparator adapted to compare a selected set of capacitive elements against a reference signal and to generate a comparison result signal, and a controller for iteratively selecting the set in response to the comparison result signal, wherein the sensor is arranged to produce a digitized output signal indicative of the sensed level of the analyte of interest. An IC comprising such a sensor, an electronic device comprising such an IC and a method of determining a level of an analyte of interest using such a sensor are also disclosed.
    • 用于感测分析物的传感器包括电容元件,每个电容元件具有由电介质隔开的一对电极,其中至少一个电容元件的电介质的介电常数对分析物敏感,所述传感器还包括比较器, 相对于参考信号选择的一组电容性元件并产生比较结果信号;以及控制器,用于响应于所述比较结果信号迭代地选择所述集合,其中所述传感器被布置成产生指示感测电平的数字化输出信号 的感兴趣的分析物。 还公开了一种包括这种传感器的IC,包括这种IC的电子设备以及使用这种传感器确定感兴趣分析物的水平的方法。
    • 7. 发明授权
    • Polishing apparatus and two-step method of polishing a metal layer of an integrated circuit
    • 抛光装置和两步法抛光集成电路的金属层
    • US07709387B2
    • 2010-05-04
    • US10544411
    • 2004-01-23
    • Viet Nguyen HoangRoel Daamen
    • Viet Nguyen HoangRoel Daamen
    • H01L21/302
    • H01L21/3212H01L21/7684
    • The method of manufacturing an integrated circuit (IC) according to the invention starts with providing a pre-fabricated integrated circuit (10) comprising an electrical device (2) and having a surface (11) coated with a dielectric material (12) and a metal (15). The dielectric material (12), which may be separated from the metal (15) by the barrier layer (14), has an opening (13), which is filled with the metal (15). Portions of the metal (15) outside the opening (13) are removed by polishing for a first period of time, after which an etching agent (25) is added to the polishing liquid (24) and polishing is continued for a second period of time for removing portions of the metal (15) remaining outside the opening (13). The polishing apparatus (40) is able to perform the method.
    • 根据本发明的制造集成电路(IC)的方法开始于提供一种包括电气装置(2)并具有涂覆有电介质材料(12)的表面(11)的预制集成电路(10)和 金属(15)。 可以通过阻挡层(14)与金属(15)分离的电介质材料(12)具有填充有金属(15)的开口(13)。 通过在第一时间内抛光除去开口(13)外部的金属部分(15),然后将蚀刻剂(25)加入到抛光液体(24)中,继续研磨第二周期 用于去除剩余在开口(13)外部的金属(15)的部分的时间。 抛光装置(40)能够执行该方法。