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    • 5. 发明授权
    • Electrochemical potentiometric sensing without reference electrode
    • 无参考电极的电化学电位传感
    • US08801917B2
    • 2014-08-12
    • US13061110
    • 2009-08-24
    • Matthias MerzYouri Victorovitch PonomarevGilberto Curatola
    • Matthias MerzYouri Victorovitch PonomarevGilberto Curatola
    • G01N27/327
    • G01N27/4148G01N27/4145
    • The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.
    • 本发明涉及一种测定分析物(100)中带电粒子浓度的方法,所述方法包括以下步骤:i)确定表面电位对界面温度曲线(c1,c2,c3,c3)的至少两个测量点, c4),其中所述界面温度是由第一离子敏感电介质(Fsd)和分析物(100)之间的第一界面与第二离子敏感电介质(Ssd)与分析物之间的第二界面 (100),并且其中所述表面电位由所述第一离子敏感电介质(Fsd)和所述第二离子敏感电介质(Ssd)上的第一电极(Fe)和第二电极(Se)之间的电位差获得, ),和ii)从所述曲线(c1,c2,c3,c4)的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于测定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器,即EGFET和EIS电容器。
    • 6. 发明申请
    • ELECTROCHEMICAL POTENTIOMETRIC SENSING WITHOUT REFERENCE ELECTRODE
    • 无参考电极的电化学电位感测
    • US20110208457A1
    • 2011-08-25
    • US13061110
    • 2009-08-24
    • Matthias MerzYouri Victorovitch PonomarevGilberto Curatola
    • Matthias MerzYouri Victorovitch PonomarevGilberto Curatola
    • G06F19/00
    • G01N27/4148G01N27/4145
    • The invention relates to a method of determining a charged particle concentration in an analyte (100), the method comprising steps of: i) determining at least two measurement points of a surface-potential versus interface-temperature curve (c1, c2, c3, c4), wherein the interface temperature is obtained from a temperature difference between a first interface between a first ion-sensitive dielectric (Fsd) and the analyte (100) and a second interface between a second ion-sensitive dielectric (Ssd) and the analyte (100), and wherein the surface-potential is obtained from a potential difference between a first electrode (Fe) and a second electrode (Se) onto which said first ion-sensitive dielectric (Fsd) and said second ion-sensitive dielectric (Ssd) are respectively provided, And ii) calculating the charged particle concentration from locations of the at least two measurement points of said curve (c1, c2, c3, c4). This method, which still is a potentiometric electrochemical measurement, exploits the temperature dependency of a surface-potential of an ion-sensitive dielectric in an analyte. The invention further provides an electrochemical sensor deny for determining a charged particle concentration in an analyte. The invention also provides various sensors which can be used to determine the charged particle concentration, i.e. EGFET's and EIS capacitors.
    • 本发明涉及一种测定分析物(100)中带电粒子浓度的方法,所述方法包括以下步骤:i)确定表面电位对界面温度曲线(c1,c2,c3,c3)的至少两个测量点, c4),其中所述界面温度是由第一离子敏感电介质(Fsd)和分析物(100)之间的第一界面与第二离子敏感电介质(Ssd)与分析物之间的第二界面 (100),并且其中所述表面电位由所述第一离子敏感电介质(Fsd)和所述第二离子敏感电介质(Ssd)上的第一电极(Fe)和第二电极(Se)之间的电位差获得, ),和ii)从所述曲线(c1,c2,c3,c4)的至少两个测量点的位置计算带电粒子浓度。 这种仍然是电位电化学测量的方法利用分析物中离子敏感电介质的表面电位的温度依赖性。 本发明还提供了一种用于确定分析物中带电粒子浓度的电化学传感器。 本发明还提供可用于确定带电粒子浓度的各种传感器,即EGFET和EIS电容器。
    • 7. 发明申请
    • CHARGE-PUMP CIRCUIT
    • 充电电路
    • US20110241767A1
    • 2011-10-06
    • US13133246
    • 2009-12-17
    • Gilberto CuratolaYouri Victorovitch Ponomarev
    • Gilberto CuratolaYouri Victorovitch Ponomarev
    • G05F3/02
    • H02M3/073H02M3/07
    • The invention describes a charge-pump circuit (1, 1′) comprising a supply voltage input node (10) for applying an input voltage (Uin) to be boosted, a boosted voltage output node (11) for outputting a boosted voltage (Uout), and a plurality of transistor stages connected in series between the supply voltage input node (10) and the boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which transistor (D1, . . . , D5) comprises at least two gates, of which one is a first gate (G) for switching the transistor (D1, . . . , D5) on or off according to a voltage applied to the first gate (G), and one is an additional second gate (Gi) for controlling the threshold voltage of the multiple-gate transistor (D1, . . . , D5), independently of the first gate (G), according to a control voltage (Φ1, Φ2) applied to the second gate (Gi). The invention further describes a method of boosting a voltage using a charge-pump circuit (1, 1′) comprising a plurality of transistor stages connected in series between a supply voltage input node (10) and a boosted voltage output node (11), wherein at least one transistor stage comprises a multiple-gate transistor (D1, . . . , D5), which method comprises applying an input voltage (Uin) to be boosted at the supply voltage input node (10); applying a control voltage, (Φ1, Φ2) to the second gate (Gi) of the multiple-gate transistor (D1, . . . , D5) to control the threshold voltage of the multiple-gate transistor (D1, . . . , D5); and outputting the boosted voltage (Uout) at the voltage output node (11).
    • 本发明描述了一种电荷泵电路(1,1'),其包括用于施加要升压的输入电压(Uin)的电源电压输入节点(10),用于输出升压电压的升压电压输出节点(11) )和串联连接在电源电压输入节点(10)和升压电压输出节点(11)之间的多个晶体管级,其中至少一个晶体管级包括多栅晶体管(D1 ...,D5 ),该晶体管(D1,...,D5)包括至少两个栅极,其中一个栅极用于根据施加的电压来开启或关闭晶体管(D1,...,D5) 根据第一栅极(G),并且一个是另外的第二栅极(Gi),用于独立于第一栅极(G)来控制多栅极晶体管(D1,...,D5)的阈值电压 施加到第二门(Gi)的控制电压(Φ1,Φ2)。 本发明还描述了一种使用包括串联连接在电源电压输入节点(10)和升压电压输出节点(11)之间的多个晶体管级的电荷泵电路(1,1')来提升电压的方法, 其中至少一个晶体管级包括多栅极晶体管(D1,...,D5),该方法包括在电源电压输入节点(10)处施加要升压的输入电压(Uin); 对多栅极晶体管(D1,...,D5)的第二栅极(Gi)施加控制电压(Φ1,Φ2),以控制多栅极晶体管(D1 ...,D5)的阈值电压, D5); 并输出在电压输出节点(11)处的升压电压(Uout)。