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1. 发明申请

US20070227878A1 Forming ovonic threshold switches with reduced deposition chamber gas pressure 审中-公开
标题翻译：形成具有降低沉积室气体压力的超声门限开关
公开(公告)号：US20070227878A1
公开(公告)日：2007-10-04
申请号：US11392135
申请日：2006-03-29
申请人： Roger Hamamjy , Kuo-Wei Chang , Jason Reid
发明人： Roger Hamamjy , Kuo-Wei Chang , Jason Reid
IPC分类号： C23C14/00
CPC分类号： C23C14/0623 , C23C14/345 , G11C13/0004 , G11C13/003 , G11C2213/76 , H01L27/2427 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： A phase change memory including an ovonic threshold switch may be formed with reduced argon in the ovonic threshold switch. The presence of argon adversely impacts the performance of the ovonic threshold switch. Argon concentration can be reduced by depositing the phase change material for the ovonic threshold switch in a relatively low pressure argon environment to enable the argon pressure within said chamber to be reduced.
摘要翻译：包括超声阈值开关的相变存储器可以在超声波阈值开关中由减少的氩形成。氩气的存在不利地影响了超声波阈值开关的性能。可以通过在相对低压的氩气环境中沉积用于超声阈值开关的相变材料来降低氩浓度，以使所述室内的氩气压力降低。

2. 发明授权

US07888240B2 Method of forming phase change memory devices in a pulsed DC deposition chamber 有权
标题翻译：在脉冲DC沉积室中形成相变存储器件的方法
公开(公告)号：US07888240B2
公开(公告)日：2011-02-15
申请号：US11974168
申请日：2007-10-10
申请人： Roger Hamamjy , Kuo-Wei Chang , Sean Jong Lee , Chong W. Lim
发明人： Roger Hamamjy , Kuo-Wei Chang , Sean Jong Lee , Chong W. Lim
IPC分类号： H01L21/326
CPC分类号： H01L27/2427 , C23C14/06 , C23C14/0623 , C23C14/3435 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
摘要翻译：使用脉冲DC的脉冲直流（DC）沉积室形成包括二次阈值开关的相变存储器。脉冲DC用于沉积硫族化物膜。脉冲DC也可用于沉积碳膜。

3. 发明申请

US20060239800A1 Pulsed DC and RF physical vapor deposition cluster tool 审中-公开
标题翻译：脉冲DC和RF物理气相沉积簇工具
公开(公告)号：US20060239800A1
公开(公告)日：2006-10-26
申请号：US11114261
申请日：2005-04-26
申请人： Roger Hamamjy , Kuo-Wei Chang , Jong-Won Lee
发明人： Roger Hamamjy , Kuo-Wei Chang , Jong-Won Lee
IPC分类号： H01L21/677
CPC分类号： H01L21/68721 , H01L21/67207
摘要： Radio frequency sputtering of high resistance films may be achieved in a cluster tool. Suitable radio frequency isolation may be utilized to enable RF sputtering in an environment which may sensitive to radio frequency energy.
摘要翻译：高电阻膜的射频溅射可以在簇工具中实现。可以利用合适的射频隔离来在可能对射频能量敏感的环境中进行RF溅射。

4. 发明申请

US20080102560A1 Method of forming phase change memory devices in a pulsed DC deposition chamber 有权
标题翻译：在脉冲DC沉积室中形成相变存储器件的方法
公开(公告)号：US20080102560A1
公开(公告)日：2008-05-01
申请号：US11974168
申请日：2007-10-10
申请人： Roger Hamamjy , Kuo-Wei Chang , Sean Lee , Chong Lim
发明人： Roger Hamamjy , Kuo-Wei Chang , Sean Lee , Chong Lim
IPC分类号： H01L45/00
CPC分类号： H01L27/2427 , C23C14/06 , C23C14/0623 , C23C14/3435 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase change memory including an ovonic threshold switch is formed using a pulsed direct current (DC) deposition chamber using pulsed DC. Pulsed DC is used to deposit a chalcogenide film. Pulsed DC may be also used to deposit a carbon film.
摘要翻译：使用脉冲DC的脉冲直流（DC）沉积室形成包括二次阈值开关的相变存储器。脉冲DC用于沉积硫族化物膜。脉冲DC也可用于沉积碳膜。

5. 发明授权

US08852696B2 Method for vapor deposition 有权
标题翻译：气相沉积方法
公开(公告)号：US08852696B2
公开(公告)日：2014-10-07
申请号：US12725296
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/00 , C30B25/12 , H01L21/677 , C30B29/40 , C23C16/54 , C30B29/42 , C30B25/02 , H01L21/67 , C23C16/48 , C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/4583 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/12 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784
摘要： Chemical vapor deposition (CVD) processes include, in one embodiment, a method for processing a wafer within a vapor deposition reactor comprising heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.
摘要翻译：在一个实施方案中，化学气相沉积（CVD）方法包括在气相沉积反应器内处理晶片的方法，包括通过将晶片载体的下表面暴露于从灯发出的辐射而加热设置在晶片载体上的至少一个晶片组装和流动通过延伸穿过整个反应器的通道的液体，以将反应器盖组件保持在预定温度，例如在约275℃至约325℃的范围内。该方法还包括沿着通过至少一个包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室以及通过排气组件从反应器中除去气体的晶片载体轨道。

6. 发明授权

US08602707B2 Methods and apparatus for a chemical vapor deposition reactor 有权
标题翻译：化学气相沉积反应器的方法和装置
公开(公告)号：US08602707B2
公开(公告)日：2013-12-10
申请号：US12475169
申请日：2009-05-29
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
IPC分类号： H01L21/677
CPC分类号： C30B25/08 , B65G2207/06 , C23C16/45519 , C23C16/4583 , C23C16/54 , C30B25/025 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/18 , C30B29/40 , C30B29/42 , H01L21/67109 , H01L21/67784
摘要： Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
摘要翻译：本发明的实施方案一般涉及悬浮底物载体或载体。在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及沿着处理室内的路径移动衬底载体。

7. 发明申请

US20130098289A1 METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR 审中-公开
公开(公告)号：US20130098289A1
公开(公告)日：2013-04-25
申请号：US13444645
申请日：2012-04-11
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
IPC分类号： C30B25/12 , C30B25/10 , C30B25/18 , C30B25/14 , C30B25/08 , C30B25/02
CPC分类号： C30B25/08 , B65G2207/06 , C23C16/45519 , C23C16/4583 , C23C16/54 , C30B25/025 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/18 , C30B29/40 , C30B29/42 , H01L21/67109 , H01L21/67784
摘要： Embodiments of the invention generally relate to a chemical vapor deposition system and related method of use. In one embodiment, the system includes a reactor lid assembly having a body, a track assembly having a body and a guide path located along the body, and a heating assembly operable to heat the substrate as the substrate moves along the guide path. The body of the lid assembly and the body of the track assembly are coupled together to form a gap that is configured to receive a substrate. In another embodiment, a method of forming layers on a substrate using the chemical vapor deposition system includes introducing the substrate into a guide path, depositing a first layer on the substrate and depositing a second layer on the substrate, while the substrate moves along the guide path; and preventing mixing of gases between the first deposition step and the second deposition step.

8. 发明申请

US20120106935A1 HEATING LAMP SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：加热灯系统及其方法
公开(公告)号：US20120106935A1
公开(公告)日：2012-05-03
申请号：US13257273
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
IPC分类号： F27D11/12
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD). In one embodiment, a heating lamp assembly for a CVD reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a plurality of lamps extending from a first lamp holder to a second lamp holder. The lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. In another embodiment, the method includes exposing a lower surface of a wafer carrier to energy emitted from the heating lamp assembly and heating the wafer carrier to a predetermined temperature.
摘要翻译：本发明的实施方案一般涉及用于化学气相沉积（CVD）的装置和方法。在一个实施例中，提供了一种用于CVD反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含从第一灯座延伸到第二灯座的多个灯的灯壳体。灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以交替地设置在第一和第二灯座之间。反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。在另一个实施例中，该方法包括将晶片载体的下表面暴露于从加热灯组件发射的能量并将晶片载体加热至预定温度。

9. 发明申请

US20120067286A1 VAPOR DEPOSITION REACTOR SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：蒸气沉积反应器系统及其方法
公开(公告)号：US20120067286A1
公开(公告)日：2012-03-22
申请号：US13257264
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
IPC分类号： C23C16/455 , C23C16/52 , C23C16/46
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses and methods for chemical vapor deposition (CVD) processes. In one embodiment, a CVD reactor has a reactor lid assembly disposed on a reactor body and containing a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly consecutively and linearly disposed next to each other on a lid support. The CVD reactor further contains first and second faceplates disposed on opposite ends of the reactor body, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body has a wafer carrier disposed on a wafer carrier track and a lamp assembly disposed below the wafer carrier track and containing a plurality of lamps which may be utilized to heat wafers disposed on the wafer carrier.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置和方法。在一个实施方案中，CVD反应器具有反应器盖组件，反应器盖组件设置在反应器主体上，并且在盖支撑件上彼此相邻并且连续并线性地设置有第一淋浴头组件，隔离器组件，第二淋浴头组件和排气组件。 CVD反应器还包含设置在反应器主体的相对端上的第一和第二面板，其中第一喷头组件设置在第一面板和隔离器组件之间，排气组件设置在第二喷头组件和第二面板之间。反应器主体具有设置在晶片载体轨道上的晶片载体和设置在晶片载体轨道下方的灯组件，并且容纳可用于加热设置在晶片载体上的晶片的多个灯。

10. 发明申请

US20100209626A1 METHODS FOR HEATING WITH LAMPS 有权
标题翻译：用加热灯加热的方法
公开(公告)号：US20100209626A1
公开(公告)日：2010-08-19
申请号：US12725318
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/46
CPC分类号： C23C16/4583 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/10 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784
摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.
摘要翻译：本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座达到预定温度。加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器到灯座和灯下方。多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

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