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1. 发明授权

US5330800A High impedance plasma ion implantation method and apparatus 失效
标题翻译：高阻抗等离子体离子注入方法及装置
公开(公告)号：US5330800A
公开(公告)日：1994-07-19
申请号：US971433
申请日：1992-11-04
申请人： Robert W. Schumacher , Jesse N. Matossian , Dan M. Goebel
发明人： Robert W. Schumacher , Jesse N. Matossian , Dan M. Goebel
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , H01L21/324 , B05D3/06
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
摘要翻译：一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中每个脉冲的最小部分。在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。电压脉冲为至少约50kV，优选为100kV以上。脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。

2. 发明授权

US5607509A High impedance plasma ion implantation apparatus 失效
标题翻译：高阻抗等离子体离子注入装置
公开(公告)号：US5607509A
公开(公告)日：1997-03-04
申请号：US635527
申请日：1996-04-22
申请人： Robert W. Schumacher , Jesse N. Matossian , Dan M. Goebel
发明人： Robert W. Schumacher , Jesse N. Matossian , Dan M. Goebel
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , H01L21/324 , C23C16/00
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
摘要翻译：一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中每个脉冲的最小部分。在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。电压脉冲为至少约50kV，优选为100kV以上。脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。

3. 发明授权

US5218179A Plasma source arrangement for ion implantation 失效
标题翻译：用于离子注入的等离子体源装置
公开(公告)号：US5218179A
公开(公告)日：1993-06-08
申请号：US749013
申请日：1991-08-23
申请人： Jesse N. Matossian , Dan M. Goebel
发明人： Jesse N. Matossian , Dan M. Goebel
IPC分类号： C23C14/48 , H01J37/32
CPC分类号： H01J37/32688 , C23C14/48 , H01J37/32412 , H01J37/32706
摘要： An object (14) which is to be implanted with ions is enclosed in a container (12). A plasma (44) is generated in a chamber (26) which is separate from, and opens into the container (12). The plasma diffuses from the chamber (26) into the container (12) to surround the object (14) with uniform density. High voltage negative pulses are applied to the object (14), causing the ions to be accelerated from the plasma (44) toward, and be implanted into, the object (14). Line-of-sight communication between a plasma generation source (30) located in the chamber (26) and the object (14) is blocked, thereby eliminating undesirable effects including heating of the object (14) by the source (30) and transfer of thermally discharged material from the source (30) to the object (14). Two or more chambers (26,34) may be provided for generating independent plasmas (44,46) of different ion species which diffuse into and uniformly mix in the container (12). The attributes of the different plasmas (44,46) may be individually selected and controlled in the respective chambers (26,34).
摘要翻译：要注入离子的物体（14）封闭在容器（12）中。在与容器（12）分离并向容器（12）开口的室（26）中产生等离子体（44）。等离子体从室（26）扩散到容器（12）中以围绕物体（14）以均匀的密度扩散。将高电压负脉冲施加到物体（14）上，使离子从等离子体（44）加速朝向物体（14）并被植入物体（14）。位于室（26）中的等离子体产生源（30）和物体（14）之间的视线通信被阻挡，从而消除不期望的影响，包括通过源（30）加热物体（14）并传送从所述源（30）到所述物体（14）的热排出材料。可以提供两个或更多个腔室（26,34），用于产生不同离子种类的独立等离子体（44,46），这些等离子体扩散到容器（12）中并均匀地混合在容器（12）中。不同等离子体（44,46）的属性可以在相应的腔室（26,34）中单独选择和控制。

4. 发明授权

US5296272A Method of implanting ions from a plasma into an object 失效
标题翻译：将离子从等离子体注入到物体中的方法
公开(公告)号：US5296272A
公开(公告)日：1994-03-22
申请号：US8273
申请日：1993-01-25
申请人： Jesse N. Matossian , Dan M. Goebel
发明人： Jesse N. Matossian , Dan M. Goebel
IPC分类号： C23C14/48 , H01J37/32 , B05D3/06 , B05D3/02
CPC分类号： H01J37/32688 , C23C14/48 , H01J37/32412 , H01J37/32706
摘要： An object which is to be implemented with ions is enclosed in a container. A plasma is generated in a chamber which is separate from, and opens into the container. The plasma diffuses from the chamber into the container to surround the object with uniform density. High voltage negative pulses are applied to the object, causing the ions to be accelerated from the plasma toward, and be implanted into, the object. Line-of-sight communication between a plasma generation source located in the chamber and the object is blocked, thereby eliminating undesirable effects including heating of the object by the source and transfer of thermally discharged material from the source to the object. Two or more chambers may be provided for generating independent plasmas of different ion species which diffuse into and uniformly mix in the container. The attributes of the different plasmas may be individually selected and controlled in the respective chambers.
摘要翻译：要用离子实施的物体被封闭在容器中。在与容器分离并向容器开放的室中产生等离子体。等离子体从腔室扩散到容器中以围绕物体均匀密度。将高电压负脉冲施加到物体上，使离子从等离子体加速并被注入到物体中。位于室内的等离子体发生源与物体之间的视线通信被阻挡，从而消除不期望的影响，包括由源引起的物体的加热和将热排出的材料从源传送到物体。可以提供两个或更多个室以产生扩散到容器中并均匀混合在容器中的不同离子种类的独立等离子体。不同等离子体的属性可以在相应的室中单独选择和控制。

5. 发明授权

US5212425A Ion implantation and surface processing method and apparatus 失效
标题翻译：离子植入和表面处理方法和装置
公开(公告)号：US5212425A
公开(公告)日：1993-05-18
申请号：US595122
申请日：1990-10-10
申请人： Dan M. Goebel , Jesse N. Matossian
发明人： Dan M. Goebel , Jesse N. Matossian
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265
CPC分类号： H01J37/32697 , C23C14/48 , H01J37/3171 , H01J37/32 , H01J37/32412 , H01J37/32422
摘要： A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a plasma source ion implantation apparatus. The periodic discharge results in the application of high voltage negative pulses to the object, causing ions from the plasma to be accelerated toward, and implanted into the object. A pulse transformer is preferably provided between the plasma switch and capacitor, and the object to step up the voltage of the pulses and enable the plasma switch to operate at lower voltage levels. The plasma switch enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry to prevent arcing between the object and plasma. A second power source, capacitor, and plasma switch may be provided to apply positive pulses to the object in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object for performing thermally assisted ion implantation, surface annealing, and the like.

6. 发明授权

US5374456A Surface potential control in plasma processing of materials 失效
标题翻译：材料等离子体处理中的表面电位控制
公开(公告)号：US5374456A
公开(公告)日：1994-12-20
申请号：US995864
申请日：1992-12-23
申请人： Jesse N. Matossian , Robert W. Schumacher , David M. Pepper
发明人： Jesse N. Matossian , Robert W. Schumacher , David M. Pepper
IPC分类号： B29C35/08 , B29C59/14 , C23C8/36 , C23C14/32 , C23C14/48 , H01J37/317 , H01L21/265 , B05D3/06
CPC分类号： C23C8/36 , B29C59/14 , C23C14/32 , C23C14/48 , B29C2035/0872 , B29C2035/0877
摘要： An object (30) is plasma processed by placing an electrically conducting grid (34) over all or a portion of the surface (32) of the object (30) so that the grid (34) generally follows the contours of the surface (32) but is displaced outwardly from the surface (32). Ions or electrons from a plasma surrounding the object (30) are accelerated into the surface (32) of the object (30) using as a processing driving force an electrical potential applied to the electrically conducting grid (34). The use of a contoured conducting grid (34) allows plasma processing of large, electrically nonconducting objects and objects having sharp surface features or recesses.
摘要翻译：通过将导电栅格（34）放置在物体（30）的表面（32）的全部或一部分上，使得栅格（34）大致遵循表面（32）的轮廓，等离子体处理物体），但是从表面（32）向外移位。使用作为施加到导电栅极（34）的电位的处理驱动力将来自围绕物体（30）的等离子体的离子或电子加速到物体（30）的表面（32）中。使用成形的导电栅格（34）允许等离子体处理具有尖锐表面特征或凹陷的大的非导电物体和物体。

7. 发明授权

US5487922A Surface preparation and deposition method for titanium nitride onto carbon-containing materials 失效
标题翻译：氮化钛在含碳材料上的表面处理和沉积方法
公开(公告)号：US5487922A
公开(公告)日：1996-01-30
申请号：US259371
申请日：1994-06-14
申请人： Simon K. Nieh , Jesse N. Matossian , Frans G. Krajenbrink , Robert W. Schumacher
发明人： Simon K. Nieh , Jesse N. Matossian , Frans G. Krajenbrink , Robert W. Schumacher
IPC分类号： C23C14/02 , C23C14/06 , C23C14/34 , B05D3/06 , C23C14/00 , C23F1/00
CPC分类号： C23C14/022 , C23C14/0641
摘要： Wear-resistant titanium nitride coatings onto cast iron and other carbon-containing materials is enhanced by means of a new surface preparation and deposition process. The conventional pre-deposition surface cleaning by Ar.sup.+ ion bombardment is replaced by a hydrogen-ion bombardment process which cleans the substrate surface by chemical reaction with minimal sputtering and simultaneously removes graphite present on the cast iron surface. Removal of the graphite significantly improves the wear resistance of titanium nitride, since the presence of graphite causes initiation of wear at those sites. Hydrogen ion bombardment or electron bombardment may be used to heat the substrate to a chosen temperature. Finally, titanium nitride is deposited by reactive sputtering with simultaneous bombardment of high-flux Ar.sup.+ ions from an independently generated dense plasma. The resulting titanium nitride coating on cast iron evidences superior wear properties and adhesion compared to conventional reactive evaporation deposition techniques for titanium nitride.
摘要翻译：通过新的表面处理和沉积工艺，增强了对铸铁和其他含碳材料的耐磨氮化钛涂层。通过Ar +离子轰击的常规预沉积表面清洁被氢离子轰击过程所代替，氢离子轰击过程通过化学反应以最小的溅射清洗基底表面，同时去除铸铁表面上存在的石墨。由于石墨的存在引起了这些部位的磨损，因此去除石墨显着提高了氮化钛的耐磨性。可以使用氢离子轰击或电子轰击将基底加热到所选择的温度。最后，通过反应溅射沉积氮化钛，同时从独立产生的致密等离子体轰击高通量Ar +离子。与用于氮化钛的常规反应蒸发沉积技术相比，所得到的铸铁上的氮化钛涂层证明了优异的耐磨性和粘附性。

8. 发明授权

US5924277A Ion thruster with long-lifetime ion-optics system 失效
标题翻译：离子推进器具有长寿命离子光学系统
公开(公告)号：US5924277A
公开(公告)日：1999-07-20
申请号：US767920
申请日：1996-12-17
申请人： John R. Beattie , John D. Williams , Jesse N. Matossian
发明人： John R. Beattie , John D. Williams , Jesse N. Matossian
IPC分类号： B64G1/24 , F03H1/00 , H05H1/00
CPC分类号： F03H1/0043
摘要： Ion erosion of grids is reduced in an ion thruster with a multiple-grid ion-optics system. The thruster has an array of aperture sets in which aperture areas change in a perimeter region of the array. In one ion-optics system embodiment, a screen aperture area is reduced and a decelerator aperture area is increased in aperture sets that are proximate to the perimeter of the array. Prototype tests of this embodiment have illustrated significant reduction of ion erosion.
摘要翻译：使用多栅离子光学系统的离子推进器减小了栅格的离子侵蚀。推进器具有一组孔径组，其中孔径区域在阵列的周边区域中变化。在一个离子光学系统实施例中，屏幕孔径面积减小，并且靠近阵列周边的孔径组中的减速器孔径面积增加。该实施例的原型测试表明离子侵蚀显着减少。

9. 发明授权

US5833918A Heat treatment by plasma electron heating and solid/gas jet cooling 失效
公开(公告)号：US5833918A
公开(公告)日：1998-11-10
申请号：US672133
申请日：1996-06-27
申请人： Jesse N. Matossian , John D. Williams , Wilfried Krone-Schmidt
发明人： Jesse N. Matossian , John D. Williams , Wilfried Krone-Schmidt
IPC分类号： C21D1/09 , C21D1/18 , C21D1/28 , C21D1/38 , C21D1/613 , C21D1/773 , C21D9/32 , C23C8/36 , C21D1/06
CPC分类号： C21D1/38 , C21D1/09 , C21D9/32 , C23C8/36 , C21D1/28 , C21D1/613 , C21D1/773
摘要： A workpiece is heated by first forming an ionized gas plasma around the workpiece. A positive potential is applied to the workpiece to accelerate electrons from the plasma into the workpiece. The workpiece is uniformly surface heated by the energy directed into the workpiece by the electrons. The workpiece is cooled by providing a flow of a pressurized liquid material such as carbon dioxide having a triple point. The liquid material is expanded through a nozzle to form solid particles that contact the surface of the workpiece and remove heat from it by subliming.

10. 发明授权

US5455061A Nondestructive determination of plasma processing treatment characteristics 失效
标题翻译：无损检测等离子体处理处理特性
公开(公告)号：US5455061A
公开(公告)日：1995-10-03
申请号：US372793
申请日：1994-12-23
申请人： Jesse N. Matossian , John J. Vajo
发明人： Jesse N. Matossian , John J. Vajo
IPC分类号： G01N21/59 , C23C14/00 , C23C14/22 , C23C14/48 , C23C14/54 , G01N27/04 , B05D3/06 , C23C2/00
CPC分类号： C23C14/54 , C23C14/22 , C23C14/48
摘要： Plasma processing treatment characteristics of an object are determined nondestructively, prior to plasma processing the object, by placing an indicator layer over at least a portion of the plasma processing surface of the object, so as to generally conform to the shape of the surface. An electrically conductive grid is placed over the indicator layer, and made electrically common with the object. The indicator layer is implanted through the conductive grid, and changes properties responsive to the plasma processing treatment. The implanted indicator layer is thereafter analyzed to determine the treatment characteristics of the indicator layer. Plasma processing spatial distribution and total dosage are determined nondestructively from this information and used to establish the plasma processing program for the object and adjust the plasma processing apparatus as needed.
摘要翻译：通过在对象的等离子体处理表面的至少一部分上设置指示层，以等于对该物体的形状进行等离子体处理，非物理地确定物体的等离子体处理处理特性，从而大体上符合表面的形状。导电栅格放置在指示层上方，并与物体电气共用。指示层通过导电栅格植入，并且响应于等离子体处理处理而改变特性。此后分析植入的指示剂层以确定指示剂层的处理特性。从该信息非破坏性地确定等离子体处理空间分布和总剂量，并用于建立对象的等离子体处理程序，并根据需要调整等离子体处理装置。

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