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    • 6. 发明授权
    • Apparatus for depositing material on a substrate
    • 用于在衬底上沉积材料的装置
    • US4761269A
    • 1988-08-02
    • US873581
    • 1986-06-12
    • Darrell R. CongerJohn G. PosaDennis K. Wickenden
    • Darrell R. CongerJohn G. PosaDennis K. Wickenden
    • C23C16/44C23C16/455C30B25/14C30B35/00C23C16/54
    • C23C16/45582C23C16/45561C23C16/45585C30B25/14
    • An apparatus for depositing materials on a substrate includes a manifold having a plurality of inlet valves located equidistantly from the manifold outlet. Preferably the inlet valves are mounted in radial configuration to minimize any "dead space" between the valves and the manifold outlet. The manifold connects a plurality of gas sources through its inlets to a process chamber at its outlet. The valves within the manifold switch continuous reactive gas flows from the sources back and forth between the process chamber and a vent chamber during the deposition process. A purging gas flow is also provided at each valve to purge the "dead space" within the manifold of reactive gases that can linger once the reactive gas flow has been switched to the vent. The method employed by the apparatus maintains a predetermined constant gas flow through the process chamber to produce uniform deposition on the substrate. Reactive and nonreactive gas flows are injected into the process chamber at a rate sufficient to maintain the predetermined flow. After each deposition step, reactive gas flows are switched into and out of the process chamber and the nonreactive gas flows are adjusted in response to maintain a constant total flow. The vent chamber is maintained at substantially equal pressure to the process chamber to minimize fluctuations in reactive gas flows as the flows are switched between chambers.
    • 用于在衬底上沉积材料的装置包括具有多个与歧管出口等距离设置的入口阀的歧管。 优选地,入口阀以径向构造安装以最小化阀和歧管出口之间的任何“死区”。 歧管将多个气体源通过其入口连接到其出口处的处理室。 歧管开关内的连续反应性气体中的阀在沉积过程中在处理室和排气室之间来回流动。 在每个阀门处还设置吹扫气体流,以清除反应气体流已经切换到排气口时可能停留的反应气体歧管内的“死空间”。 该装置采用的方法维持预定的恒定气流通过处理室,以在衬底上产生均匀的沉积。 反应性和非反应性气体流以足以维持预定流量的速率注入到处理室中。 在每个沉积步骤之后,反应性气体流动被切换进入和离开处理室,并且响应于保持恒定的总流量来调节非反应性气体流。 通气室保持在与处理室基本相等的压力,以使流动在室之间切换时最小化反应气流的波动。
    • 7. 发明授权
    • Semiconductor device with a tantalum iridium barrier layer contact
structure
    • 具有钽铱阻挡层接触结构的半导体器件
    • US4546373A
    • 1985-10-08
    • US575066
    • 1984-01-30
    • Anthony G. ToddDennis K. Wickenden
    • Anthony G. ToddDennis K. Wickenden
    • G01K7/01H01L29/45H01L29/737H01L23/48H01L23/56
    • H01L29/7371G01K7/01H01L29/452
    • In a temperature sensor of the kind comprising a bipolar transistor (1) having an adjustable constant current source (3) connected between its collector and base regions (7 and 9) and its emitter region (11) connected to the output of a high gain amplifier (5) whose input is derived from the current source (3), the junction between the emitter and base regions (11 and 9) of the transistor is a heterojunction and each of the emitter and base regions (11 and 9) is provided with a metal contact (17 or 19) separated from the associated region by a barrier layer (21 or 23) of an amorphous tantalum iridium alloy. The use of a heterojunction for the transistor emitter-base junction increases the temperature range of the sensor while the barrier layers ensure metallic stability at the high temperature end of the sensor temperature range.
    • 在包括连接在其集电极和基极区域(7和9)之间的可调恒流源(3)的双极性晶体管(1)的温度传感器及其连接到高增益输出的发射极区域(11) 放大器(5),其输入源自电流源(3),晶体管的发射极和基极区域(11和9)之间的结是异质结,并且提供发射极和基极区域(11和9)中的每一个 具有通过无定形钽铱合金的阻挡层(21或23)与相关区域分离的金属接触(17或19)。 晶体管发射极 - 基极结的异质结的使用增加了传感器的温度范围,而阻挡层确保了传感器温度范围高温端的金属稳定性。
    • 8. 发明授权
    • Manufacture of monolithic LED arrays for electroluminescent display
devices
    • 用于电致发光显示装置的单片LED阵列的制造
    • US4335501A
    • 1982-06-22
    • US200257
    • 1980-10-23
    • Dennis K. WickendenVera M. Vincent
    • Dennis K. WickendenVera M. Vincent
    • H01L27/15H01L21/302H01L21/316
    • H01L27/156Y10S257/926
    • In the manufacture of a monolithic LED array, in particular a matrix array, in which portions of the array are electrically isolated from one another by channels cut or etched through the slice of n-type material, the channels are formed in two stages, relatively wide channels first being formed from the back surface of the slice to within 50 microns of the front surface, and filled with a glass frit which is bonded to the semiconductor material on each side of the channel, then narrower channels are formed from the front surface of the slice to meet the glass in the initial channels, and are similarly filled with glass frit. A glass powder suspension is introduced into each set of channels by spreading or spinning over the surface of the slice, or by electrophoretic deposition and/or capillary action, then the liquid suspension medium is removed and the glass powder is sintered.
    • 在制造单片LED阵列,特别是矩阵阵列中,其中阵列的部分通过切割或蚀刻穿过n型材料切片的通道彼此电隔离,通道形成为两个阶段 首先从切片的后表面形成到前表面的50微米内的宽通道,并且填充有玻璃料,该玻璃料在通道的每一侧与半导体材料接合,然后从前表面形成较窄的通道 的切片以在初始通道中满足玻璃,并且类似地填充有玻璃料。 通过在切片的表面上铺展或旋转,或通过电泳沉积和/或毛细管作用将玻璃粉末悬浮液引入每组通道中,然后除去液体悬浮介质并玻璃粉末被烧结。