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1. 发明授权

US4546373A Semiconductor device with a tantalum iridium barrier layer contact structure 失效
标题翻译：具有钽铱阻挡层接触结构的半导体器件
公开(公告)号：US4546373A
公开(公告)日：1985-10-08
申请号：US575066
申请日：1984-01-30
申请人： Anthony G. Todd , Dennis K. Wickenden
发明人： Anthony G. Todd , Dennis K. Wickenden
IPC分类号： G01K7/01 , H01L29/45 , H01L29/737 , H01L23/48 , H01L23/56
CPC分类号： H01L29/7371 , G01K7/01 , H01L29/452
摘要： In a temperature sensor of the kind comprising a bipolar transistor (1) having an adjustable constant current source (3) connected between its collector and base regions (7 and 9) and its emitter region (11) connected to the output of a high gain amplifier (5) whose input is derived from the current source (3), the junction between the emitter and base regions (11 and 9) of the transistor is a heterojunction and each of the emitter and base regions (11 and 9) is provided with a metal contact (17 or 19) separated from the associated region by a barrier layer (21 or 23) of an amorphous tantalum iridium alloy. The use of a heterojunction for the transistor emitter-base junction increases the temperature range of the sensor while the barrier layers ensure metallic stability at the high temperature end of the sensor temperature range.
摘要翻译：在包括连接在其集电极和基极区域（7和9）之间的可调恒流源（3）的双极性晶体管（1）的温度传感器及其连接到高增益输出的发射极区域（11）放大器（5），其输入源自电流源（3），晶体管的发射极和基极区域（11和9）之间的结是异质结，并且提供发射极和基极区域（11和9）中的每一个具有通过无定形钽铱合金的阻挡层（21或23）与相关区域分离的金属接触（17或19）。晶体管发射极 - 基极结的异质结的使用增加了传感器的温度范围，而阻挡层确保了传感器温度范围高温端的金属稳定性。

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