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    • 4. 发明授权
    • Signal processing circuit and method for use with an optical navigation system
    • 用于光导航系统的信号处理电路及方法
    • US07250893B2
    • 2007-07-31
    • US11271039
    • 2005-11-12
    • Brian D. TodoroffDouglas A. Webb
    • Brian D. TodoroffDouglas A. Webb
    • H03M1/12
    • G06F3/0317H03M1/50
    • A signal processing circuit and processing method are provided for measuring an analog signal from a photo-detector. Generally, the method includes steps of: (i) sampling and storing a characteristic of the signal at a first predetermined time following a reset of the circuit; (ii) sampling the characteristic of the signal at a second predetermined time following a reset or initialization of the circuit; (iii) determining a difference between the stored characteristic of the signal sampled at the first predetermined time and the characteristic of the signal sampled at the second predetermined time; and (iv) converting the determined difference to a digital value and determining a slope of the signal from the digital value and the difference between the first and second predetermined times. Thus, the measurement of the slope is independent of and substantially unaffected by absolute values of the characteristics measured at the first and second predetermined times.
    • 提供信号处理电路和处理方法,用于测量来自光检测器的模拟信号。 通常,该方法包括以下步骤:(i)在电路复位之后的第一预定时间采样和存储信号的特性; (ii)在电路的复位或初始化之后的第二预定时间采样信号的特性; (iii)确定在第一预定时间采样的信号的存储特性与在第二预定时间采样的信号的特性之间的差; 以及(iv)将所确定的差值转换为数字值,并根据数字值和第一和第二预定时间之间的差确定信号的斜率。 因此,斜率的测量与第一和第二预定时间测量的特性的绝对值无关并且基本上不受影响。
    • 7. 发明授权
    • Method and apparatus for driving two-dimensional modulator arrays
    • 用于驱动二维调制器阵列的方法和装置
    • US07161518B1
    • 2007-01-09
    • US10809978
    • 2004-03-26
    • Douglas A. WebbStephen Gaalema
    • Douglas A. WebbStephen Gaalema
    • H03M1/82H02N1/00
    • H02N1/006G09G3/2011G09G3/2014G09G3/3433G09G2300/0814G09G2300/0828G09G2300/0833G09G2300/0842G09G2310/027G09G2310/063
    • In one embodiment, a micro electromechanical system (MEMS) driver circuit receives a pulse-width modulated (PWM) signal and uses it to control a voltage at a MEMS cell. The driver circuit further includes a current source, a capacitor, and a reset circuit that can discharge the capacitor. The voltage at the MEMS cell can be controlled in proportion to the pulse width of the PWM signal. In another embodiment disclosed, a MEMS driver circuit receives a first PWM signal and a second PWM signal. Each PWM signal is coupled to a current source. One current source can provide a course current control and the other current source can provide fine current control. The driver circuit can further include a capacitor and a reset circuit for discharging the capacitor. The voltage at the MEMS cell can be controlled in proportion to a summation of the first and second current sources. According to another aspect of the embodiments, a method of controlling a voltage at a MEMS cell is disclosed. The method includes the steps of receiving a PWM signal, controlling a current source with the PWM signal, and adjusting the voltage at the MEMS cell in proportion to a pulse width of the PWM signal.
    • 在一个实施例中,微机电系统(MEMS)驱动器电路接收脉冲宽度调制(PWM)信号并使用其来控制MEMS单元处的电压。 驱动器电路还包括可以放电电容器的电流源,电容器和复位电路。 可以将MEMS单元的电压与PWM信号的脉冲宽度成比例地控制。 在所公开的另一实施例中,MEMS驱动电路接收第一PWM信号和第二PWM信号。 每个PWM信号耦合到电流源。 一个电流源可以提供课程电流控制,另一个电流源可以提供精细的电流控制。 驱动器电路还可以包括用于放电电容器的电容器和复位电路。 可以按照与第一和第二电流源的总和成比例地控制MEMS单元处的电压。 根据实施例的另一方面,公开了一种控制MEMS单元电压的方法。 该方法包括以下步骤:接收PWM信号,用PWM信号控制电流源,并根据PWM信号的脉冲宽度调整MEMS单元处的电压。
    • 9. 发明授权
    • Process for chemical vapor deposition of tungsten onto a titanium
nitride substrate surface
    • 将化学气相沉积到氮化钛衬底表面上的方法
    • US5906866A
    • 1999-05-25
    • US797397
    • 1997-02-10
    • Douglas A. Webb
    • Douglas A. Webb
    • H01L21/285C23C8/02C23C16/02C23C16/14C23C16/34C23C16/56C23C28/00H01L21/28H01L21/768C23C14/02
    • C23C8/02C23C16/0245C23C16/14C23C16/34C23C16/56H01L21/76841H01L21/76862H01L21/76876
    • A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures of 200 to 500.degree. C. Tungsten film nucleation is preferably facilitated by partial removal of the oxidized surface of titanium nitride or titanium nitride coated substrates by a sputter cleaning process prior to the tungsten CVD. The process differs in part from other processes in that deposition proceeds rapidly on titanium nitride without a significant nucleation period without the addition of other chemical compounds such as silane. The sputter cleaning process preferably takes place in an inert vacuum environment that protects the substrate from atmosphere and oxygen until the tungsten CVD step occurs. The process is particularly advantageous where the substrate has a titanium nitride surface that had been created in a separate location such as by a reactive sputter coating process from which the substrate must be transferred through ambient atmosphere containing oxygen. The advantages of the invention can be partially attained or enhanced by isolating the substrates from an oxygen containing environment between the creation of the titanium nitride surface and the initiating of the tungsten CVD.
    • 通过在200至500℃的温度下通过氢还原六氟化钨来进行在氮化钛上的气相沉积钨薄膜的化学气相沉积的工艺。优选通过部分去除氮化钛或氮化钛涂覆的氧化表面来促进钨膜成核 在钨CVD之前通过溅射清洗工艺制造衬底。 该方法部分地与其它方法不同,因为沉积在氮化钛上快速进行而没有显着的成核期,而不添加其它化学化合物如硅烷。 溅射清洗工艺优选在惰性真空环境中进行,其保护衬底免受大气和氧气直到发生钨CVD步骤。 该方法特别有利的是,其中衬底具有已经在单独位置产生的氮化钛表面,例如通过反应性溅射涂覆工艺,衬底必须从该反应溅射涂覆工艺通过包含氧的环境气氛转移。 通过在氮化钛表面的产生和钨CVD的引发之间将衬底与含氧环境隔离来部分地获得或增强本发明的优点。