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    • 5. 发明授权
    • Surface treatments for DNA processing devices
    • DNA处理装置的表面处理
    • US06475722B1
    • 2002-11-05
    • US09192605
    • 1998-11-16
    • Steven A. Henck
    • Steven A. Henck
    • C12Q168
    • C12Q1/68B01L3/502707B01L2200/12B01L2300/0819B01L2300/163Y10T29/49117
    • The present invention discloses methodologies for the treatment of the surface(s) of DNA processing devices so as to greatly reduce DNA adsorption to the surface(s) exposed to the DNA-containing media. These aforementioned surface treatments include: (i) the deposition of thin-films of silicon-rich, silicon nitride and of hydroxyl-containing,low-temperature silicon oxide and (ii) the washing of surface with a basic, oxidative wash solution. The present invention also discloses the fabrication of DNA processing devices utilizing surface(s) treated by the methods described above. Such DNA processing devices include, for example, miniaturized electrophoresis and other DNA separation devices, miniaturized PCR reactors, and the like. The present invention further discloses methodologies for testing the degree of DNA adherence to a given surface. Additionally, the methodologies and devices of the present invention are also applicable to the processing of nucleic acids, in generally.
    • 本发明公开了用于处理DNA加工装置表面的方法,以便大大减少对暴露于含DNA培养基的表面的DNA吸附。 这些上述表面处理包括:(i)沉积富硅,氮化硅和含羟基的低温氧化硅的薄膜,和(ii)用碱性氧化性洗涤溶液洗涤表面。 本发明还公开了利用通过上述方法处理的表面的DNA加工装置的制造。 这样的DNA处理装置包括例如微型电泳和其他DNA分离装置,小型化PCR反应器等。 本发明进一步公开了测试给定表面的DNA粘附程度的方法。 此外,本发明的方法和装置一般也适用于核酸的加工。
    • 10. 发明授权
    • Method for rapidly etching material on a semiconductor device
    • 在半导体器件上快速蚀刻材料的方法
    • US5620556A
    • 1997-04-15
    • US385411
    • 1995-02-08
    • Steven A. Henck
    • Steven A. Henck
    • G01B11/06G01N21/00
    • G01B11/065
    • Apparatus and methods for precise processing of thin materials in a process chamber by the use of ellipsometer monitoring is disclosed. The process includes rapidly etching a layer 42 of material covering a semiconductor device. The process includes placing the semiconductor wafer 14 into a processing chamber 10. In a typical operation, the wafer 14 will include a selected substrate 32 having a first thin layer 30 of material covering the substrate 32 and then a second layer 42 of a different material covering the first layer 30. A process such as reactive ion anisotropic etching which rapidly etches the second layer 42 is initiated and this etching is monitored in situ by an ellipsometer in combination with a controller 28 to determine the thickness of the second layer 42' which has been achieved. Once the desired amount of second layer 42 remains, the rapid etching process stops to leave a residual layer 42' such as about 250 .ANG. or in a preferred embodiment a thickness equivalent to about one molecular layer. A second chemical isotropic etching process step then starts which may be substantially ineffective at etching the first layer 30 of material and which etching process consequently is typically substantially slower than the first etching process. Since only a very thin layer remains, the slow speed or isotropic nature of the second etching process does not take an unacceptable amount of time or cause other problems, such as loss of critical dimension.
    • 公开了通过使用椭偏仪监测在处理室中精细处理薄材料的装置和方法。 该方法包括快速蚀刻覆盖半导体器件的材料层42。 该方法包括将半导体晶片14放置在处理室10中。在典型的操作中,晶片14将包括选定的衬底32,其具有覆盖衬底32的材料的第一薄层30,然后是不同材料的第二层42 覆盖第一层30.开始快速蚀刻第二层42的诸如反应性离子各向异性蚀刻的过程,并且通过与控制器28组合的椭圆计现场监测该蚀刻,以确定第二层42'的厚度, 已经实现。 一旦所需量的第二层42保留,则快速蚀刻工艺停止以留下残余层42',例如约250,或在优选实施方案中为等于约一个分子层的厚度。 然后开始第二种化学各向同性蚀刻工艺步骤,其在蚀刻第一材料层30时基本上无效,因此蚀刻工艺通常比第一蚀刻工艺慢得多。 由于仅剩下非常薄的层,所以第二蚀刻工艺的慢速或各向同性的性质不会变得不可接受的时间量或引起诸如临界尺寸损失的其它问题。