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1. 发明授权

US07482634B2 Monolithic array for solid state ultraviolet light emitters 有权
标题翻译：固态紫外线发射体的单片阵列
公开(公告)号：US07482634B2
公开(公告)日：2009-01-27
申请号：US10950029
申请日：2004-09-24
申请人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
发明人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/32
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.
摘要翻译：本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。在本发明的实施例中，UV-LED的特征在于基底层材料，其包括基底，p掺杂半导体材料，多量子阱，n掺杂半导体材料，基底材料为p型金属并且其中基部结构具有台面构造，该台面构造可以在边界表面上圆化，或者可以是非圆形的，例如具有平坦的上边界表面的台面。换句话说，p型金属位于由基底结构材料形成的台面上。在更具体的实施例中，UV-LED结构包括位于设备适当位置的n型金属化层，钝化层和接合焊盘。在更具体的实施例中，p型金属层被封装在封装层中。

2. 发明授权

US07527742B2 Etchant, method of etching, laminate formed thereby, and device 有权
标题翻译：蚀刻剂，蚀刻方法，由此形成的层压体和装置
公开(公告)号：US07527742B2
公开(公告)日：2009-05-05
申请号：US11167719
申请日：2005-06-27
申请人： Steven Alfred Tysoe , Steven Francis LeBoeuf , Mark Philip D'Evelyn , Venkat Subramaniam Venkataramani , Vinayak Tilak , Jeffrey Bernard Fortin , Charles Adrian Becker , Stephen Daley Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert John Wojnarowski , Abasifreke Udo Ebong
发明人： Steven Alfred Tysoe , Steven Francis LeBoeuf , Mark Philip D'Evelyn , Venkat Subramaniam Venkataramani , Vinayak Tilak , Jeffrey Bernard Fortin , Charles Adrian Becker , Stephen Daley Arthur , Samhita Dasgupta , Kanakasabapathi Subramanian , Robert John Wojnarowski , Abasifreke Udo Ebong
IPC分类号： C03C15/00 , C03C25/68
CPC分类号： H01L21/31111
摘要： An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.
摘要翻译：提供包括卤化盐的蚀刻剂，例如冰晶石（Na 3 AlF 6）或四氟硼酸钾（KBF 4）。盐可以以足以蚀刻基材的量存在于蚀刻剂中，并且可以具有大于约200摄氏度的熔体温度。湿蚀刻的方法可以包括使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述支撑层可以包括氧化铝; 或使蚀刻剂与多层层压体的支撑层的至少一个表面接触，其中所述蚀刻剂可以包括冰晶石（Na 3 AlF 6），四氟硼酸钾（KBF 4）或两者; 并蚀刻所述支撑层的至少一部分。该方法可以提供通过将结晶生长到氧化铝载体层上并通过湿蚀刻化学去除至少一部分载体层而制备的层压体。提供了包括层压板的电子设备，光学设备或组合设备。

3. 发明授权

US07375378B2 Surface passivated photovoltaic devices 失效
标题翻译：表面钝化光伏器件
公开(公告)号：US07375378B2
公开(公告)日：2008-05-20
申请号：US11127648
申请日：2005-05-12
申请人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
发明人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L31/078 , H01L31/02168 , H01L31/056 , H01L31/068 , H01L31/0745 , H01L31/0747 , Y02E10/52 , Y02E10/547
摘要： A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.
摘要翻译：提供了包括光伏电池的光伏器件。光伏电池包括包含晶体半导体材料的发射极层和邻近发射极层设置的轻掺杂晶体衬底。轻掺杂的晶体衬底和发射极层是相反掺杂的。此外，光伏器件包括耦合到光伏电池的背面钝化结构。该结构包括邻近轻掺杂晶体衬底设置的高掺杂背表面场层。高度掺杂的背表面场层包括非晶或微晶半导体材料，其中高度掺杂的背表面场层和轻掺杂的晶体衬底被类似地掺杂，并且其中高掺杂背表面场层的掺杂水平高于掺杂水平的轻掺杂晶体衬底。此外，该结构还可以包括邻近轻掺杂晶体衬底设置的本征背表面钝化层，其中本征背表面钝化层包括非晶或微晶半导体材料。

4. 发明申请

US20060255340A1 Surface passivated photovoltaic devices 失效
标题翻译：表面钝化光伏器件
公开(公告)号：US20060255340A1
公开(公告)日：2006-11-16
申请号：US11127648
申请日：2005-05-12
申请人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
发明人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
IPC分类号： H01L33/00
CPC分类号： H01L31/078 , H01L31/02168 , H01L31/056 , H01L31/068 , H01L31/0745 , H01L31/0747 , Y02E10/52 , Y02E10/547
摘要： A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.
摘要翻译：提供了包括光伏电池的光伏器件。光伏电池包括包含晶体半导体材料的发射极层和邻近发射极层设置的轻掺杂晶体衬底。轻掺杂的晶体衬底和发射极层是相反掺杂的。此外，光伏器件包括耦合到光伏电池的背面钝化结构。该结构包括邻近轻掺杂晶体衬底设置的高掺杂背表面场层。高度掺杂的背表面场层包括非晶或微晶半导体材料，其中高度掺杂的背表面场层和轻掺杂的晶体衬底被类似地掺杂，并且其中高掺杂背表面场层的掺杂水平高于掺杂水平的轻掺杂晶体衬底。此外，该结构还可以包括邻近轻掺杂晶体衬底设置的本征背表面钝化层，其中本征背表面钝化层包括非晶或微晶半导体材料。

5. 发明申请

US20100186811A1 Silicon Carbonitride Antireflective Coating 审中-公开
标题翻译：碳氮化硅防反射涂层
公开(公告)号：US20100186811A1
公开(公告)日：2010-07-29
申请号：US12547435
申请日：2009-08-25
申请人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Udo Ebong
发明人： Dong Seop Kim , Moon Hee Kang , Ajeet Rohatgi , Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Abasifreke Udo Ebong
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/18 , Y02E10/50
摘要： An antireflective coating for silicon-based solar cells comprising amorphous silicon carbonitride, wherein the amount of carbon in the silicon carbonitride is from 5 to 25%, a solar cell comprising the antireflective coating, and a method of preparing the antireflective coating.
摘要翻译：一种包含非晶硅碳氮化物的硅基太阳能电池的抗反射涂层，其中碳氮化硅中碳的量为5至25％，包含抗反射涂层的太阳能电池以及制备抗反射涂层的方法。

6. 发明申请

US20120222741A1 SOLAR CELL WITH IMPROVED PERFORMANCE 审中-公开
标题翻译：具有改进性能的太阳能电池
公开(公告)号：US20120222741A1
公开(公告)日：2012-09-06
申请号：US13496708
申请日：2010-09-17
申请人： Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Sergiy Navala , Xiaoming Yang , Ajeet Rohatgi , Moon Hee Kang , Abasifreke Udo Ebong , Brian Charles Rounsaville
发明人： Michael Davies , Junegie Hong , Genowefa Jakubowska-Okoniewski , Sergiy Navala , Xiaoming Yang , Ajeet Rohatgi , Moon Hee Kang , Abasifreke Udo Ebong , Brian Charles Rounsaville
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/03767 , H01L31/02168 , H01L31/028 , H01L31/0288 , H01L31/068 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： This application discloses silicon solar cells manifesting enhanced light induced degradation characteristics. The application also discloses silicon solar cells with a silicon-based substrate comprising boron, oxygen and carbon, and an antireflective coating (ARC) containing at least one carbon-containing layer adjacent to the substrate. Also disclosed are methods for preparing solar cells.
摘要翻译：本申请公开了表现出增强的光诱导降解特性的硅太阳能电池。本申请还公开了具有包含硼，氧和碳的硅基底层和包含至少一个与衬底相邻的含碳层的抗反射涂层（ARC）的硅太阳能电池。还公开了制备太阳能电池的方法。

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