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1. 发明授权

US09447489B2 Methods of making photovoltaic devices and photovoltaic devices 有权
标题翻译：制造光伏器件和光伏器件的方法
公开(公告)号：US09447489B2
公开(公告)日：2016-09-20
申请号：US13165298
申请日：2011-06-21
申请人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
发明人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
IPC分类号： H01L31/06 , C23C14/06 , H01L31/0296 , H01L31/073 , H01L31/0749 , C23C14/54 , H01L31/18 , C23C18/12
CPC分类号： C23C14/0629 , C23C14/548 , C23C18/1204 , C23C18/1279 , C23C18/1291 , H01L31/0296 , H01L31/073 , H01L31/0749 , H01L31/1828 , H01L31/1832 , Y02E10/541 , Y02E10/543 , Y02P70/521
摘要： One aspect of the present invention includes method of making a photovoltaic device. The method includes disposing an absorber layer on a window layer, wherein the absorber layer includes a first region and a second region. The method includes disposing the first region adjacent to the window layer in a first environment including oxygen at a first partial pressure; and disposing the second region on the first region in a second environment including oxygen at a second partial pressure, wherein the first partial pressure is greater than the second partial pressure. One aspect of the present invention includes a photovoltaic device.
摘要翻译：本发明的一个方面包括制造光伏器件的方法。该方法包括在窗口层上设置吸收层，其中吸收层包括第一区域和第二区域。该方法包括将第一区域与窗口层相邻置于包含第一分压的氧的第一环境中; 以及在包括第二分压的氧的第二环境中将所述第二区域设置在所述第一区域上，其中所述第一分压大于所述第二分压。本发明的一个方面包括光伏器件。

2. 发明授权

US08349084B2 Apparatus and systems for intermixing cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices 有权
标题翻译：用于混合硫化镉层和碲化镉层用于薄膜光伏器件的装置和系统
公开(公告)号：US08349084B2
公开(公告)日：2013-01-08
申请号：US13080029
申请日：2011-04-05
申请人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
发明人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
IPC分类号： C23C16/54 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C14/0629 , C03C17/347 , C03C17/3476 , C03C17/3678 , C03C2217/91 , C23C14/24 , C23C14/56 , H01L21/02439 , H01L21/02557 , H01L21/02562 , H01L21/0262 , H01L21/02631 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
摘要翻译：提供了一种用于在光伏（PV）模块衬底上顺序沉积混合薄膜层和升华的源材料的装置以及相关联的工艺。该方法可以包括将衬底引入沉积室，其中窗口层（例如，硫化镉层）在衬底的表面上。可以向沉积室供应含硫气体。此外，源蒸气可以供应到沉积室，其中源材料包括碲化镉。含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。在一个具体实施方案中，例如，混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。

3. 发明申请

US20120103261A1 APPARATUS AND SYSTEMS FOR INTERMIXING CADMIUM SULFIDE LAYERS AND CADMIUM TELLURIDE LAYERS FOR THIN FILM PHOTOVOLTAIC DEVICES 有权
标题翻译：用于薄膜光伏器件的堇青石层和碲化钽层的装置和系统
公开(公告)号：US20120103261A1
公开(公告)日：2012-05-03
申请号：US13080029
申请日：2011-04-05
申请人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
发明人： James Neil Johnson , Bastiaan Arie Korevaar , Yu Zhao
IPC分类号： H01L31/18 , C23C16/455 , C23C16/448
CPC分类号： C23C14/0629 , C03C17/347 , C03C17/3476 , C03C17/3678 , C03C2217/91 , C23C14/24 , C23C14/56 , H01L21/02439 , H01L21/02557 , H01L21/02562 , H01L21/0262 , H01L21/02631 , H01L31/073 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus for sequential deposition of an intermixed thin film layer and a sublimated source material on a photovoltaic (PV) module substrate is provided, along with associated processes. The process can include introducing a substrate into a deposition chamber, wherein a window layer (e.g., a cadmium sulfide layer) is on a surface of the substrate. A sulfur-containing gas can be supplied to the deposition chamber. In addition, a source vapor can be supplied to the deposition chamber, wherein the source material comprises cadmium telluride. The sulfur-containing gas and the source vapor can be present within the deposition chamber to form an intermixed layer on the window layer. In one particular embodiment, for example, the intermixed layer generally can have an increasing tellurium concentration and decreasing sulfur concentration extending away from the window layer.
摘要翻译：提供了一种用于在光伏（PV）模块衬底上顺序沉积混合薄膜层和升华的源材料的装置以及相关联的工艺。该方法可以包括将衬底引入沉积室，其中窗口层（例如，硫化镉层）在衬底的表面上。可以向沉积室供应含硫气体。此外，源蒸气可以供应到沉积室，其中源材料包括碲化镉。含硫气体和源蒸气可以存在于沉积室内以在窗口层上形成混合层。在一个具体实施方案中，例如，混合层通常可以具有增加的碲浓度和降低远离窗口层的硫浓度。

4. 发明授权

US07718016B2 Methods of making multilayered, hydrogen-containing intermetallic structures 有权
标题翻译：制备多层含氢金属间化合物的方法
公开(公告)号：US07718016B2
公开(公告)日：2010-05-18
申请号：US11399392
申请日：2006-04-07
申请人： James Neil Johnson , Ilissa Brooke Schild
发明人： James Neil Johnson , Ilissa Brooke Schild
IPC分类号： C22F1/00
CPC分类号： C23C14/5846 , C23C14/165 , C23C14/5826 , C23C28/023 , C23C28/025 , C23C28/322 , C23C28/3225 , C23C28/345 , C23C28/42
摘要： Methods of making multilayered, hydrogen-containing intermetallic structures including at least two adjacent metal layers are disclosed. At least one of the metal layers contains hydrogen, which can be introduced into the metal by plasma hydrogenation. The intermetallic structures can have high hydrogen contents and micrometer-sized and nanometer-sized dimensions.
摘要翻译：公开了制备包括至少两个相邻金属层的多层含氢金属间化合物结构的方法。金属层中的至少一层含有氢，其可通过等离子体氢化引入金属。金属间结构可以具有高氢含量和微米尺寸和纳米尺寸的尺寸。

5. 发明申请

US20100055826A1 Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering 审中-公开
标题翻译：使用大功率脉冲磁控管溅射制造太阳能电池的方法
公开(公告)号：US20100055826A1
公开(公告)日：2010-03-04
申请号：US12198732
申请日：2008-08-26
申请人： Dalong Zhong , James Neil Johnson , Xiaolan Zhang
发明人： Dalong Zhong , James Neil Johnson , Xiaolan Zhang
IPC分类号： H01L21/00
CPC分类号： H01L31/0324 , C23C14/0629 , C23C14/086 , C23C14/3485 , C23C14/35 , H01L21/02439 , H01L21/02551 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0749 , H01L31/1836 , Y02E10/541
摘要： A method of fabricating a solar cell is provided. The method includes depositing a transparent conductive contact layer on a surface of a substrate, where the transparent conductive contact layer is configured to act as a front electrode for the solar cell, depositing a window layer over the transparent conductive contact layer, depositing an absorber layer on the window layer, wherein the absorber layer and the window layer are oppositely doped and form a semiconductor junction, and where at least one of the window layer or the absorber layer is deposited by employing high power pulsed magnetron sputtering, and depositing an electrically conductive film on the semiconductor junction, wherein the electrically conductive film is configured to act as a back electrode layer for the solar cell.
摘要翻译：提供一种制造太阳能电池的方法。该方法包括在衬底的表面上沉积透明导电接触层，其中透明导电接触层被配置为用作太阳能电池的前电极，在透明导电接触层上沉积窗口层，沉积吸收层在窗口层上，其中吸收层和窗口层相对地掺杂并形成半导体结，并且其中通过使用高功率脉冲磁控溅射沉积窗口层或吸收层中的至少一个，并且沉积导电膜，其中导电膜被配置为用作太阳能电池的背电极层。

6. 发明申请

US20090272435A1 COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES 有权
标题翻译：组合级和结构级光伏器件及其制造方法
公开(公告)号：US20090272435A1
公开(公告)日：2009-11-05
申请号：US12113045
申请日：2008-04-30
申请人： Bastiaan Arie Korevaar , James Neil Johnson , Todd Ryan Tolliver , Theodore Carlton Kreutz , Xiaolan Zhang
发明人： Bastiaan Arie Korevaar , James Neil Johnson , Todd Ryan Tolliver , Theodore Carlton Kreutz , Xiaolan Zhang
IPC分类号： H01L31/0368 , H01L21/20 , H01L29/04
CPC分类号： H01L31/03529 , H01L31/03682 , H01L31/03762 , H01L31/065 , H01L31/0747 , H01L31/075 , Y02E10/546 , Y02E10/548
摘要： A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described.
摘要翻译：描述了半导体结构，其包括半导体衬底和设置在半导体衬底上的半导体层。半导体层的组成分级和结构分级。具体地，半导体层在其与基板的界面处的本质上基本上在其相对表面上基本掺杂的厚度被组成分级。此外，半导体层在其与衬底的界面处的结构上从基本上是结晶的厚度在结构上分级，在相对的表面上基本上是无定形的。还描述了相关方法。

7. 发明申请

US20080173347A1 Method And Apparatus For A Semiconductor Structure 审中-公开
标题翻译：半导体结构的方法和装置
公开(公告)号：US20080173347A1
公开(公告)日：2008-07-24
申请号：US11625841
申请日：2007-01-23
申请人： Bastiaan Arie Korevaar , James Neil Johnson
发明人： Bastiaan Arie Korevaar , James Neil Johnson
IPC分类号： H01L31/036 , H01L31/18
CPC分类号： H01L31/1816 , H01L31/0236 , H01L31/036 , H01L31/03687 , H01L31/065 , H01L31/0747 , H01L31/077 , H01L31/1868 , H01L31/204 , Y02E10/50 , Y02P70/521
摘要： One exemplary embodiment is a semiconductor structure, that can include a semiconductor substrate of one conductivity type, having a front surface and a back surface, a first semiconductor layer disposed on the front surface of the semiconductor substrate, a second semiconductor layer disposed on a portion of the back surface of the semiconductor substrate, and a third semiconductor layer disposed on another portion of the back surface of the semiconductor substrate. Each of the second and third semiconductor layers may be compositionally graded through its depth, from substantially intrinsic at an interface with the substrate, to substantially conductive at an opposite side, and have a selected conductivity type obtained by the incorporation of one or more selected dopants.
摘要翻译：一个示例性实施例是半导体结构，其可以包括具有前表面和后表面的一种导电类型的半导体衬底，设置在半导体衬底的前表面上的第一半导体层，设置在半导体衬底的一部分上的第二半导体层的半导体衬底的背表面的第三半导体层，以及设置在半导体衬底的背面的另一部分上的第三半导体层。第二半导体层和第三半导体层中的每一个可以通过其深度从基本上本征的与衬底的界面逐渐分级到相对侧的基本导电，并且具有通过掺入一种或多种所选掺杂剂而获得的选择的导电类型。

8. 发明授权

US07375378B2 Surface passivated photovoltaic devices 失效
标题翻译：表面钝化光伏器件
公开(公告)号：US07375378B2
公开(公告)日：2008-05-20
申请号：US11127648
申请日：2005-05-12
申请人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
发明人： Venkatesan Manivannan , Abasifreke Udo Ebong , Jiunn-Ru Jeffrey Huang , Thomas Paul Feist , James Neil Johnson
IPC分类号： H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L31/078 , H01L31/02168 , H01L31/056 , H01L31/068 , H01L31/0745 , H01L31/0747 , Y02E10/52 , Y02E10/547
摘要： A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystalline substrate and the emitter layer are oppositely doped. Further, the photovoltaic device includes a back surface passivated structure coupled to the photovoltaic cell. The structure includes a highly doped back surface field layer disposed adjacent the lightly doped crystalline substrate. The highly doped back surface field layer includes an amorphous or a microcrystalline semiconductor material, wherein the highly doped back surface field layer and the lightly doped crystalline substrate are similarly doped, and wherein a doping level of the highly doped back surface field layer is higher than a doping level of the lightly doped crystalline substrate. Additionally, the structure may also include an intrinsic back surface passivated layer disposed adjacent the lightly doped crystalline substrate, where the intrinsic back surface passivated layer includes an amorphous or a microcrystalline semiconductor material.
摘要翻译：提供了包括光伏电池的光伏器件。光伏电池包括包含晶体半导体材料的发射极层和邻近发射极层设置的轻掺杂晶体衬底。轻掺杂的晶体衬底和发射极层是相反掺杂的。此外，光伏器件包括耦合到光伏电池的背面钝化结构。该结构包括邻近轻掺杂晶体衬底设置的高掺杂背表面场层。高度掺杂的背表面场层包括非晶或微晶半导体材料，其中高度掺杂的背表面场层和轻掺杂的晶体衬底被类似地掺杂，并且其中高掺杂背表面场层的掺杂水平高于掺杂水平的轻掺杂晶体衬底。此外，该结构还可以包括邻近轻掺杂晶体衬底设置的本征背表面钝化层，其中本征背表面钝化层包括非晶或微晶半导体材料。

9. 发明授权

US06844070B2 Low-temperature plasma deposited hydrogenated amorphous germanium carbon abrasion-resistant coatings 失效
标题翻译：低温等离子体沉积氢化无定形锗碳耐磨涂层
公开(公告)号：US06844070B2
公开(公告)日：2005-01-18
申请号：US10232462
申请日：2002-08-30
申请人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
发明人： James Neil Johnson , Kevin Warner Flanagan , George Theodore Dalakos
IPC分类号： C23C16/30 , C23C16/32 , G02B1/10 , B32B9/00
CPC分类号： C23C16/32 , C23C16/30 , G02B1/105 , G02B1/14 , Y10T428/265 , Y10T428/30
摘要： A method of forming a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of an infrared (IR) transmissive material such as a chalcogenide is provided. The method includes positioning an IR transmissive material in a reactor chamber of a parallel plate plasma reactor and thereafter depositing a hydrogenated amorphous germanium carbon (a-GeCx:H) film on a surface of the IR transmissive material. The depositing is performed at a substrate temperature of about 130° C. or less and in the presence of a plasma which is derived from a gas mixture including a source of germanium, an inert gas, and optionally hydrogen. Optical transmissive components, such as IR sensors and windows, that have improved abrasion-resistance are also provided.
摘要翻译：提供了在红外（IR）透射材料如硫族化物的表面上形成氢化无定形锗碳（a-GeCx：H）膜的方法。该方法包括将IR透射材料定位在平行板等离子体反应器的反应室中，然后在IR透射材料的表面上沉积氢化无定形锗碳（a-GeCx：H）膜。在约130℃或更低的衬底温度下和在源自包含锗源，惰性气体和任选的氢的气体混合物的等离子体存在下进行沉积。还提供了具有改善的耐磨性的光学透射组件，例如IR传感器和窗户。

10. 发明授权

US09608144B2 Photovoltaic devices and method of making 有权
公开(公告)号：US09608144B2
公开(公告)日：2017-03-28
申请号：US13150485
申请日：2011-06-01
申请人： James Neil Johnson , Bastiaan Arie Korevaar , Timothy John Sommerer
发明人： James Neil Johnson , Bastiaan Arie Korevaar , Timothy John Sommerer
IPC分类号： H01L31/0256 , H01L31/0296 , H01L31/0272 , H01L31/073 , H01L31/0352
CPC分类号： H01L31/02963 , H01L31/0272 , H01L31/02725 , H01L31/0296 , H01L31/0352 , H01L31/073 , Y02E10/543
摘要： In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.

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