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1. 发明授权

US06858307B2 Method for the production of low defect density silicon 失效
标题翻译：生产低缺陷密度硅的方法
公开(公告)号：US06858307B2
公开(公告)日：2005-02-22
申请号：US09972608
申请日：2001-10-05
申请人： Vladimir V. Vornokov , Robert J. Falster , Mohsen Banan
发明人： Vladimir V. Vornokov , Robert J. Falster , Mohsen Banan
IPC分类号： A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/00 , C30B33/02 , C30B29/06
CPC分类号： C30B29/06 , A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/203 , C30B15/206 , Y10T428/2973 , Y10T428/298
摘要： A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
摘要翻译：根据Czochralski法制备硅单锭的方法。用于生长单晶硅锭的方法包括：在凝固的恒定直径部分的晶体生长过程中控制（i）生长速度v，（ii）平均轴向温度梯度G0，温度不低于约1325℃，以最初在锭的恒定直径部分中产生一系列主要的固有点缺陷，包括空位主导区域和硅自填隙主导区域，沿轴线交替，并且从固化温度以允许硅自间隙原子径向扩散到侧表面并且轴向扩散到空位主导区的速率，以减少每个区域内的固有点缺陷的浓度。

2. 发明授权

US07105050B2 Method for the production of low defect density silicon 失效
标题翻译：生产低缺陷密度硅的方法
公开(公告)号：US07105050B2
公开(公告)日：2006-09-12
申请号：US11058885
申请日：2005-02-16
申请人： Vladimir V. Voronkov , Robert J. Falster , Mohsen Banan
发明人： Vladimir V. Voronkov , Robert J. Falster , Mohsen Banan
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , A61K31/427 , A61K31/513 , A61K31/675 , A61K31/7008 , A61K31/704 , C30B15/203 , C30B15/206
摘要： A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.
摘要翻译：根据Czochralski法制备硅单锭的方法。用于生长单晶硅锭的方法包括在晶体的恒定直径部分的生长期间控制（i）生长速度v，（ii）平均轴向温度梯度G <0> 在从固化到不低于约1325℃的温度的温度范围内，以最初在锭的恒定直径部分中产生一系列主要的固有点缺陷，包括空位主导区域和硅自填隙主导区域，沿着并且以允许硅自间隙原子径向扩散到侧表面并且轴向扩散到空位主导区域的速率从固化温度冷却区域，以减少每个区域中的固有点缺陷的浓度。

3. 发明授权

US08969119B2 Processes for suppressing minority carrier lifetime degradation in silicon wafers 有权
标题翻译：抑制硅晶片中少数载流子寿命衰退的方法
公开(公告)号：US08969119B2
公开(公告)日：2015-03-03
申请号：US13486463
申请日：2012-06-01
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： H01L31/18 , H01L21/322
CPC分类号： H01L29/16 , H01L21/3221 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Processes for suppressing minority carrier lifetime degradation in silicon wafers are disclosed. The processes involve quench cooling the wafers to increase the density of nano-precipitates in the silicon wafers and the rate at which interstitial atoms are consumed by the nano-precipitates.
摘要翻译：公开了抑制硅晶片中的少数载流子寿命劣化的方法。该方法包括骤冷冷却晶片以增加硅晶片中的纳米沉淀物的密度以及间隙原子被纳米沉淀物消耗的速率。

4. 发明申请

US20090004426A1 Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates 审中-公开
标题翻译：在重掺杂的单晶硅衬底中抑制氧沉淀
公开(公告)号：US20090004426A1
公开(公告)日：2009-01-01
申请号：US11771667
申请日：2007-06-29
申请人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
IPC分类号： B32B3/02 , C30B33/06
CPC分类号： H01L21/3225 , Y10T428/21
摘要： This invention generally relates to a process for suppressing oxygen precipitation in epitaxial silicon wafers having a heavily doped silicon substrate and a lightly N-doped silicon epitaxial layer by dissolving existing oxygen clusters and precipitates within the substrate. Furthermore, the formation of oxygen precipitates is prevented upon subsequent oxygen precipitation heat treatment.
摘要翻译：本发明一般涉及一种通过将现有的氧簇和沉淀物溶解在衬底中来抑制具有重掺杂硅衬底和轻掺杂N掺杂硅外延层的外延硅晶片中的氧沉淀的方法。此外，在随后的氧沉淀热处理时，防止形成氧析出物。

5. 发明授权

US06955718B2 Process for preparing a stabilized ideal oxygen precipitating silicon wafer 有权
标题翻译：制备稳定的理想氧沉淀硅晶片的方法
公开(公告)号：US06955718B2
公开(公告)日：2005-10-18
申请号：US10615127
申请日：2003-07-08
申请人： Robert J. Falster , Vladimir V. Voronkov
发明人： Robert J. Falster , Vladimir V. Voronkov
IPC分类号： C30B33/00 , C30B15/20
CPC分类号： C30B29/06 , C30B33/00
摘要： The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.
摘要翻译：本发明涉及单晶Czochralski型硅晶片及其制备方法，其中稳定的氧沉淀物成核中心具有不均匀的分布。具体地，峰值浓度位于晶片体积中，并且无沉淀区域从表面向内延伸。

6. 发明授权

US06828690B1 Non-uniform minority carrier lifetime distributions in high performance silicon power devices 有权
标题翻译：高性能硅功率器件的非均匀少数载流子寿命分布
公开(公告)号：US06828690B1
公开(公告)日：2004-12-07
申请号：US09366850
申请日：1999-08-04
申请人： Robert J. Falster
发明人： Robert J. Falster
IPC分类号： H01L2974
CPC分类号： H01L21/3225 , H01L21/221 , H01L21/3221 , H01L29/167 , H01L29/32 , Y10S257/913
摘要： A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the segment. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.
摘要翻译：一种用于热处理单晶硅片段以影响片段中少数载流子复合中心轮廓的方法。该段具有前表面，后表面和前表面和后表面之间的中心平面。在该过程中，对该段进行热处理以形成晶格空位，该空位在大部分硅中形成。然后将该片段从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的部分，其中峰密度在或靠近中心平面，其浓度通常在片段前表面的方向上减小。铂原子然后扩散到硅基质中，使得所得的铂浓度分布基本上与晶格空位的浓度分布有关。

7. 发明授权

US06500255B2 Process for growing silicon crystals which allows for variability in the process conditions while suppressing the formation of agglomerated intrinsic point defects 有权
标题翻译：用于生长硅晶体的方法，其允许工艺条件的变化同时抑制聚集的固有点缺陷的形成
公开(公告)号：US06500255B2
公开(公告)日：2002-12-31
申请号：US09853232
申请日：2001-05-11
申请人： Robert J. Falster , Vladimir Voronkov , Paolo Mutti
发明人： Robert J. Falster , Vladimir Voronkov , Paolo Mutti
IPC分类号： C30B1500
CPC分类号： C30B15/206 , C30B15/203 , C30B29/06 , C30B33/00
摘要： A process for growing a single crystal silicon ingot having an axially symmetric region substantially free of agglomerated intrinsic point defects. The ingot is grown generally in accordance with the Czochralski method; however, the manner by which the ingot is cooled from the temperature of solidification to a temperature which is in excess of about 900° C. is controlled to allow for the diffusion of intrinsic point defects, such that agglomerated defects do not form in this axially symmetric region. Accordingly, the ratio v/G0 is allowed to vary axially within this region, due to changes in v or G0, between a minimum and maximum value by at least 5%.
摘要翻译：用于生长具有基本上没有附聚的固有点缺陷的轴对称区域的单晶硅锭的方法。锭通常按照Czochralski法生长; 然而，将锭从凝固温度冷却至超过约900℃的温度的方式被控制以允许本征点缺陷的扩散，使得在该轴向上不形成聚集的缺陷对称区域。因此，由于v或G0的变化，最小值与最大值之间的比例v / G0在该区域内轴向变化至少5％。

8. 发明申请

US20110250739A1 EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF 审中-公开
标题翻译：具有重层基底的外延片及其制备方法
公开(公告)号：US20110250739A1
公开(公告)日：2011-10-13
申请号：US13165430
申请日：2011-06-21
申请人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
IPC分类号： H01L21/20
CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961
摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
摘要翻译：本发明总体上涉及一种用于抑制硅掺杂硅衬底和轻掺杂硅外延层的外延硅晶片的衬底/外延层界面附近的硅自间隙扩散的方法。通过包含位错环的硅自间隙沉积层来抑制进入外延层的间隙扩散。

9. 发明申请

US20090130824A1 ARSENIC AND PHOSPHORUS DOPED SILICON WAFER SUBSTRATES HAVING INTRINSIC GETTERING 有权
标题翻译：具有内部入口的亚光和磷光体硅基底片
公开(公告)号：US20090130824A1
公开(公告)日：2009-05-21
申请号：US12347336
申请日：2008-12-31
申请人： Robert J. Falster , Vladimir V. Voronkov , Gabriella Borionetti
发明人： Robert J. Falster , Vladimir V. Voronkov , Gabriella Borionetti
IPC分类号： H01L21/322
CPC分类号： H01L21/3225 , C30B29/06 , C30B33/02
摘要： A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates.
摘要翻译：一种用于制备低电阻率砷或磷掺杂（N + / N ++）硅晶片的方法，其在基本上任意的电子器件制造工艺的热处理循环期间可靠地形成氧沉淀物。

10. 发明授权

US07521382B2 High resistivity silicon structure and a process for the preparation thereof 有权
标题翻译：高电阻率硅结构及其制备方法
公开(公告)号：US07521382B2
公开(公告)日：2009-04-21
申请号：US11436688
申请日：2006-05-18
申请人： Robert J. Falster , Vladimir V. Voronkov , Galina I. Voronkova , Anna V. Batunina
发明人： Robert J. Falster , Vladimir V. Voronkov , Galina I. Voronkova , Anna V. Batunina
IPC分类号： H01L21/00
CPC分类号： H01L21/324 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3225
摘要： The present invention generally relates to a high resistivity CZ silicon wafer, or a high resistivity silicon structure derived therefrom, and a process for the preparation thereof. In particular, the high resistivity silicon structure comprises a large diameter CZ silicon wafer as the substrate thereof, wherein the resistivity of the substrate wafer is decoupled from the concentration of acceptor atoms (e.g., boron) therein, the resistivity of the substrate being substantially greater than the resistivity as calculated based on the concentration of said acceptor atoms therein.
摘要翻译：本发明一般涉及一种高电阻率CZ硅晶片或其衍生的高电阻率硅结构及其制备方法。特别地，高电阻率硅结构包括作为其基底的大直径CZ硅晶片，其中衬底晶片的电阻率与其中的受主原子（例如硼）的浓度分离，衬底的电阻率基本上更大比基于其中所述受主原子的浓度计算的电阻率。

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