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    • 7. 发明授权
    • Amplifier having a low noise active GaAs MESFET load
    • 具有低噪声有源GaAs MESFET负载的放大器
    • US5047728A
    • 1991-09-10
    • US554802
    • 1990-07-18
    • Robert J. Bayruns
    • Robert J. Bayruns
    • H03F1/30H03F3/193
    • H03F1/306H03F3/1935H03F2200/372
    • A high gain, low noise amplifier having an active load with an inductor. The circuit may be fabricated, into a microwave monolithic integrated circuit using GaAs field effect transistors. The amplifier input is connected to the gate terminal of a first MESFET. A DC voltage source is connected to the drain terminal of the first MESFET via a low noise active load device having a second MESFET. The load device also includes an inductor connected between the drain terminal of the first MESFET and the source terminal of the second MESFET. The output terminal of the amplifier is connected to the drain terminal of the first MESFET.
    • 具有电感器的有源负载的高增益低噪声放大器。 该电路可以制造成使用GaAs场效应晶体管的微波单片集成电路。 放大器输入端连接到第一MESFET的栅极端子。 直流电压源通过具有第二MESFET的低噪声有源负载装置连接到第一MESFET的漏极端子。 负载装置还包括连接在第一MESFET的漏极端子和第二MESFET的源极端子之间的电感器。 放大器的输出端子连接到第一MESFET的漏极端子。