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    • 8. 发明授权
    • Area efficient single capacitor CMOS relaxation oscillator
    • 区域效率单电容CMOS松弛振荡器
    • US08970313B2
    • 2015-03-03
    • US13644490
    • 2012-10-04
    • Dialog Semiconductor GmbH
    • Tim Morris
    • H03K3/0231H03K3/354
    • H03K3/0231H03K3/354H03K4/502
    • Methods and circuits for CMOS relaxation oscillators are disclosed. A single capacitive element, a single current source and a switching network are utilized. A switching network of the oscillator allows both nodes of the capacitive element to rise and fall between a positive and a negative voltage with respect to ground supply, without causing leakage to substrate or risk of latch-up, i.e. the inadvertent creation of a low-impedance path. The oscillator requires minimum silicon area, has an improved duty cycle, is particular useful for implementing lower frequency clocks and is enabled for smaller technology nodes, lower than 250 nm, due to lower supply voltage.
    • 公开了用于CMOS弛豫振荡器的方法和电路。 使用单个电容元件,单个电流源和开关网络。 振荡器的开关网络允许电容元件的两个节点在相对于地电源的正电压和负电压之间上升和下降,而不会导致衬底泄漏或闭锁的风险,即无意中产生低电压, 阻抗路径。 振荡器需要最小的硅面积,具有改进的占空比,对于实现较低频率时钟特别有用,并且由于较低的电源电压而能够用于低于250nm的较小技术节点。