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1. 发明申请

US20090121770A1 METHOD FOR CLAMPING A SEMICONDUCTOR REGION AT OR NEAR GROUND 审中-公开
标题翻译：用于夹紧或接近半导体区域的方法
公开(公告)号：US20090121770A1
公开(公告)日：2009-05-14
申请号：US12033600
申请日：2008-02-19
申请人： Samuel Patrick Rankin , Robert C. Dobkin
发明人： Samuel Patrick Rankin , Robert C. Dobkin
IPC分类号： H03K5/08
CPC分类号： G05F3/265 , H01L27/0248
摘要： A clamping circuit clamps a voltage received by an n-type semiconductor region without using a Schottky transistor. The clamping circuit includes a current mirror as well as first and second bipolar transistors. The current mirror receives a first current and supplies a second current in response. The first current is received by the first bipolar transistor, and the second current is received by the second bipolar transistor. The difference between the base-emitter junction voltages of the first and second bipolar transistors, in part, defines the voltage at which the n-type region is clamped. To start-up the circuit properly, current is withdrawn from the base/gate terminals of the transistors disposed in the current mirror. The circuit optionally includes a pair of cross-coupled transistors to reduce the output impedance and improve the power supply rejection ratio.
摘要翻译：钳位电路钳位由n型半导体区域接收的电压，而不使用肖特基晶体管。钳位电路包括电流镜以及第一和第二双极晶体管。电流镜接收第一电流并提供响应的第二电流。第一电流由第一双极晶体管接收，第二电流由第二双极晶体管接收。第一和第二双极晶体管的基极 - 发射极结电压之间的差异部分地限定了n型区域被钳位的电压。为了正确启动电路，从设置在电流反射镜中的晶体管的基极/栅极端子取出电流。该电路可选地包括一对交叉耦合的晶体管，以减少输出阻抗并提高电源抑制比。

2. 发明授权

US07362191B2 Methods and circuits for frequency modulation that reduce the spectral noise of switching regulators 有权
标题翻译：用于频率调制的方法和电路，可降低开关稳压器的频谱噪声
公开(公告)号：US07362191B2
公开(公告)日：2008-04-22
申请号：US10835693
申请日：2004-04-29
申请人： Yuhui Chen , Doug LaPorte , Randy Guy Flatness , Robert C. Dobkin
发明人： Yuhui Chen , Doug LaPorte , Randy Guy Flatness , Robert C. Dobkin
IPC分类号： H03B29/00 , H02M7/00
CPC分类号： H04B15/04 , H02M1/44 , H02M3/156 , H04B2215/067 , H04B2215/069
摘要： The present invention comprises methods and circuits for spread spectrum frequency modulation that reduce peak spectral noise at the outputs or inputs of switching regulators. More specifically, the present invention modulates the operating frequency of the switching regulator in accordance with a frequency modulation waveform having a shape coordinated to a peak noise amplitude waveform that describes the correlation between the operating frequency of a switching regulator and the peak noise amplitude at the regulator's input or output absent spread spectrum frequency modulation.
摘要翻译：本发明包括用于扩展频谱调制的方法和电路，其减少开关调节器的输出或输入处的峰值频谱噪声。更具体地，本发明根据具有与峰值噪声幅度波形协调的形状的频率调制波形来调制开关调节器的工作频率，该峰值噪声幅度波形描述了开关调节器的工作频率与峰值噪声振幅之间的相关性调节器的输入或输出没有扩频调频。

3. 发明授权

US06894461B1 Bidirectional power conversion with multiple control loops 有权
标题翻译：具有多个控制回路的双向功率转换
公开(公告)号：US06894461B1
公开(公告)日：2005-05-17
申请号：US10270799
申请日：2002-10-11
申请人： Thomas P. Hack , Robert C. Dobkin
发明人： Thomas P. Hack , Robert C. Dobkin
IPC分类号： G05F1/70 , H02K7/02 , H02M3/158 , H02M3/335 , H02M5/42
CPC分类号： H02M3/33584 , G05F1/70 , H02M3/1582 , Y10T307/707
摘要： Bidirectional power conversion systems provide the ability to change power attributes to and from a component. Current bidirectional power conversion systems use a unidirectional power converter for each direction. The integration of the two normally independent power converters results in a bidirectional power converter with nearly half the size, weight, volume, cost and complexity. Described are embodiments of bidirectional power conversion systems that allow power transfer between two or more components without requiring the use of separate unidirectional power converters.
摘要翻译：双向功率转换系统提供了向组件更改功率属性的能力。目前的双向功率转换系统为每个方向使用单向功率转换器。两个正常独立的功率转换器的集成导致双向功率转换器具有将近一半的尺寸，重量，体积，成本和复杂性。描述了允许在两个或更多个组件之间进行功率传输而不需要使用单独的单向功率转换器的双向功率转换系统的实施例。

4. 发明授权

US5926358A Lead frame capacitor and capacitively-coupled isolator circuit using same 失效
公开(公告)号：US5926358A
公开(公告)日：1999-07-20
申请号：US401028
申请日：1995-03-08
申请人： Robert C. Dobkin , Robert L. Reay
发明人： Robert C. Dobkin , Robert L. Reay
IPC分类号： H01L23/50 , H01L21/822 , H01L23/495 , H01L23/64 , H01L25/00 , H01L27/04 , H05K1/16 , H05K3/20 , H01G4/01
CPC分类号： H01L23/49575 , H01L23/49589 , H01L23/642 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49171 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01014 , H01L2924/14 , H01L2924/19041 , H05K1/162 , H05K3/202 , Y10S257/904 , Y10T29/435
摘要： A capacitor is provided including first and second electrodes formed from portions of the lead frame structure used in conventional integrated circuit packaging. The electrodes are encapsulated with dielectric molding material which provides dielectric insulation between the electrodes. A low power capacitively-coupled digital isolator circuit is also provided. The circuit employs a pair of the lead frame capacitors of the present invention and includes differential driver and receiver circuits. The receiver can also include an optional filter for increasing noise and glitch immunity.

5. 发明授权

US5485109A Error signal generation circuit for low dropout regulators 失效
标题翻译：用于低压差稳压器的误差信号发生电路
公开(公告)号：US5485109A
公开(公告)日：1996-01-16
申请号：US241505
申请日：1994-05-12
申请人： Robert C. Dobkin , Carl T. Nelson , Dennis P. O'Neill
发明人： Robert C. Dobkin , Carl T. Nelson , Dennis P. O'Neill
IPC分类号： G05F1/56 , G05F1/573 , H03K5/153
CPC分类号： G05F1/573 , G05F1/56
摘要： A three terminal control circuit for a low dropout voltage regulator having a PNP pass transistor is provided. The control circuit is capable of pulling the base-drive point down to a voltage of 3.0 volts or less to permit a current limiting resistor to be inserted between the base drive point and the base of the PNP pass transistor. The control circuit includes a pair of small-valued capacitors for providing stable operation with different output capacitors. The control circuit can also be used with p-channel FET pass transistors.
摘要翻译：提供一种具有PNP传输晶体管的低压差稳压器的三端控制电路。控制电路能够将基极驱动点拉低至3.0伏或更小的电压，以允许限流电阻器插入在PNP传输晶体管的基极驱动点和基极之间。该控制电路包括一对小值电容器，用于提供与不同输出电容器的稳定操作。控制电路也可以与p沟道FET传输晶体管一起使用。

6. 发明授权

US5212618A Electrostatic discharge clamp using vertical NPN transistor 失效
标题翻译：使用垂直NPN晶体管的静电放电钳
公开(公告)号：US5212618A
公开(公告)日：1993-05-18
申请号：US518151
申请日：1990-05-03
申请人： Dennis P. O'Neill , William C. Rempfer , Robert C. Dobkin
发明人： Dennis P. O'Neill , William C. Rempfer , Robert C. Dobkin
IPC分类号： H01L27/02
CPC分类号： H01L27/0248
摘要： An electrostatic discharge protection clamp particularly useful for with bipolar and biCMOS integrated circuits include an NPN transistor formed in an isolated tub in an epitaxial layer grown on a substrate. The collector of the NPN transistor is connected to the input terminal, and the emitter of the NPN transistor is connected to the substrate. A resistor interconnects the base and the emitter. Advantageously, the P-doped base can abut the P-doped isolation region forming the tub, and the P-doped isolation region can interconnect the emitter to the substrate. Below BV.sub.CES the clamp will look like an open circuit, and above BV.sub.CES the transistor will start conducting current. The transistor will break down collector to base. Conduction of the transistor causes a voltage drop across the base-emitter junction, and when this voltage drop exceeds the base-emitter forward voltage the transistor will turn on. Once the transistor is turned on and current starts flowing in the emitter, avalanche effects will cause the breakdown voltage to snap back to BV.sub.CEO and remain there until the emitter current drops below some low level, which will be at the end of the electrostatic discharge pulse. In the negative direction the tub to substrate diode provides an effective clamp which will clamp the voltage to a low value and limit the power dissipation in the junction. Alternatively, a bidirectional clamp can be provided in which a second NPN transistor is fabricated in the tub with the emitter of the second transistor connected to the input terminal and the collectors of the two transistors being interconnected by the N-doped epitaxial layer of the tub. The dopant conductivities can be reversed.
摘要翻译：特别适用于双极和biCMOS集成电路的静电放电保护钳包括形成在衬底上生长的外延层中的隔离桶中的NPN晶体管。 NPN晶体管的集电极连接到输入端子，NPN晶体管的发射极连接到基板。电阻器将基极和发射极互连。有利地，P掺杂的基极可以邻接形成桶的P掺杂隔离区，并且P掺杂隔离区可以将发射极与衬底互连。在BVCES下方，钳位将看起来像一个开路，而在BVCES之上，晶体管将开始导通电流。晶体管会将集电极分解为基极。晶体管的导通导致基极 - 发射极结两端的电压降，当该电压降超过基极 - 发射极正向电压时，晶体管将导通。一旦晶体管导通并且电流开始在发射极中流动，雪崩效应将导致击穿电压反弹至BVCEO，并保持在那里，直到发射极电流下降到一些低电平，这将在静电放电脉冲结束时。在负向方向上，桶至衬底二极管提供有效钳位，其将电压钳位到低值并限制结中的功率耗散。或者，可以提供双向钳位，其中第二NPN晶体管制造在桶中，其中第二晶体管的发射极连接到输入端，并且两个晶体管的集电极通过盆的N掺杂外延层互连。掺杂剂的电导率可以颠倒。

7. 发明授权

US4888634A High thermal resistance bonding material and semiconductor structures using same 失效
标题翻译：高耐热接合材料和使用其的半导体结构
公开(公告)号：US4888634A
公开(公告)日：1989-12-19
申请号：US307234
申请日：1989-02-03
申请人： Chong K. Lai , Robert C. Dobkin
发明人： Chong K. Lai , Robert C. Dobkin
IPC分类号： H01L23/29 , H01L23/31 , H01L23/495
CPC分类号： H01L24/29 , H01L23/295 , H01L23/3135 , H01L23/49513 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/29 , H01L2224/2919 , H01L2224/2929 , H01L2224/29388 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/8592 , H01L24/48 , H01L2924/00013 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01082 , H01L2924/0665 , H01L2924/09701 , H01L2924/14 , H01L2924/181
摘要： A high thermal resistance bonding material for semiconductor chips includes a binder such as epoxy or polyimide and high thermal resistance material dispersed therein such as glass micropheres, glass beads, ceramic microspheres and ceramic beads. The particles of high thermal resistance material are sieved to obtain particles of generally uniform size. In plastic-encapsulated semiconductor chips, each chip is enveloped by the bonding material.
摘要翻译：用于半导体芯片的高耐热接合材料包括诸如环氧树脂或聚酰亚胺之类的粘合剂和分散在其中的高耐热材料，例如玻璃微球，玻璃珠，陶瓷微球和陶瓷珠。筛选高耐热材料的颗粒以获得大致均匀尺寸的颗粒。在塑料封装的半导体芯片中，每个芯片被接合材料包围。

8. 发明授权

US4843302A Non-linear temperature generator circuit 失效
标题翻译：非线性温度发生器电路
公开(公告)号：US4843302A
公开(公告)日：1989-06-27
申请号：US189479
申请日：1988-05-02
申请人： Robert C. Dobkin , Carl T. Nelson
发明人： Robert C. Dobkin , Carl T. Nelson
IPC分类号： G05F3/30
CPC分类号： G05F3/30 , Y10S323/907
摘要： A non-linear temperature correction circuit is provided which utilizes, in one embodiment, a pair of semiconductor elements such as a pair of transistors electrically connected to a common biasing current having a negative temperature coefficient and a negative temperature coefficient voltage is applied between the bases of the transistors. The output of one of the transistors is a non-linear output current which is non-linear with respect to temperature and where the output current has an inflection point.
摘要翻译：提供一种非线性温度校正电路，其在一个实施例中利用一对半导体元件，例如一对晶体管，其电连接到具有负温度系数和负温度系数电压的公共偏置电流，在基极的晶体管。一个晶体管的输出是非线性输出电流，其相对于温度是非线性的，并且其中输出电流具有拐点。

9. 发明授权

US4318089A Infrared detector system 失效
标题翻译：红外探测器系统
公开(公告)号：US4318089A
公开(公告)日：1982-03-02
申请号：US133353
申请日：1980-03-24
申请人： Denes E. Frankel , Robert C. Dobkin , Barry G. Broome
发明人： Denes E. Frankel , Robert C. Dobkin , Barry G. Broome
IPC分类号： G08B13/19 , G08B13/193 , G01J5/08 , G08B13/18
CPC分类号： G08B13/19 , G08B13/193 , Y10S250/01
摘要： An improved infrared detector system includes a pair of thin film thermopile sensing elements that receives reflected energy from aspheric reflectors that are designed to provide optimum energy resolution. An absorbing coating can be placed above the sensors and extending beyond the periphery to improve the signal to noise ratio. A high gain low noise D.C. amplifier is coupled to the output of the infrared sensing elements while a high pass amplifier and low pass amplifier are designed to pass an amplified signal in the frequency range from approximately 0.2 Hz to 15 Hz. Finally, a combined peak detector and time dependent integrator summing amplifier circuit provides an enabling predetermined threshhold detection gate that requires either a predetermined large signal level or a multiple of small electrical signals within a preselected interval to produce an alarm enabling signal.
摘要翻译：改进的红外检测器系统包括一对薄膜热电堆感测元件，其接收来自非球面反射器的反射能量，其被设计为提供最佳能量分辨率。吸收涂层可以放置在传感器上方并延伸超过外围，以提高信噪比。高增益低噪声直流放大器耦合到红外线感测元件的输出，而高通放大器和低通放大器被设计成使从大约0.2Hz到15Hz的频率范围内的放大信号通过。最后，组合峰值检测器和时间相关积分器求和放大器电路提供使能的预定阈值检测门，其需要预定的大信号电平或预选间隔内的小电信号的倍数来产生报警使能信号。

10. 发明授权

US4176308A Voltage regulator and current regulator 失效
标题翻译：电压调节器和电流调节器
公开(公告)号：US4176308A
公开(公告)日：1979-11-27
申请号：US835243
申请日：1977-09-21
申请人： Robert C. Dobkin , Robert A. Pease
发明人： Robert C. Dobkin , Robert A. Pease
IPC分类号： G05F1/567 , G05F3/30 , H01L27/02 , G05F1/58 , G05F1/60
CPC分类号： G05F3/30 , G05F1/567 , H01L27/0211
摘要： A voltage regulator including a current regulator for maintaining predetermined currents in the voltage regulator is disclosed. The voltage regulator includes an output terminal for providing an output voltage; an adjustment terminal; and a control circuit connected to the output terminal at a level that differs from the voltage at the adjustment terminal by a predetermined voltage difference. The control circuit of the voltage regulator includes a resistive divider coupled between the output terminal and the adjustment terminal; a pair of transistors having their collectors connected in common and their bases respectively coupled to the resistive divider to provide a portion of the voltage difference between the output terminal and the adjustment terminal across their bases. The two transistors are adapted for operating at different current densities for providing a predetermined ratio in current flow through the pair of transistors when the voltage difference between the output terminal and the adjustment terminal is the predetermined voltage difference. The control circuit further includes a high-gain amplifier circuit connected to the emitters of the pair of transistors and to the output terminal for driving the output terminal to a maintained voltage level at which the current flow through the pair of transistors is at the predetermined current ratio and the voltage difference between the output terminal and the adjustment terminal is the predetermined voltage difference. The disclosed voltage regulator is useful as a negative voltage regulator.
摘要翻译：公开了一种包括用于维持电压调节器中的预定电流的电流调节器的电压调节器。电压调节器包括用于提供输出电压的输出端子; 调整终端; 以及控制电路，其以与调整端子处的电压不同的电平连接到输出端子预定的电压差。电压调节器的控制电路包括耦合在输出端子和调节端子之间的电阻分压器; 一对晶体管具有共同连接的集电极和它们的基极分别耦合到电阻分压器，以在其基极之间提供输出端子和调节端子之间的电压差的一部分。两个晶体管适于在不同的电流密度下操作，以便当输出端子和调整端子之间的电压差为预定电压差时，提供通过该对晶体管的电流的预定比率。控制电路还包括连接到该对晶体管的发射极的高增益放大器电路和用于将输出端驱动到维持的电压电平的输出端，在该电压电平下，流过该对晶体管的电流处于预定电流输出端子和调整端子之间的电压差是预定的电压差。所公开的电压调节器可用作负电压调节器。

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