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    • 4. 发明授权
    • Monolithic voltage reference device with internal, multi-temperature drift data and related testing procedures
    • 具有内部,多温度漂移数据和相关测试程序的单片电压参考装置
    • US07920016B2
    • 2011-04-05
    • US12475184
    • 2009-05-29
    • Michael B. AndersonTahir M. HasoonBrendan J. WhelanJ. Spencer WrightRobert L. Reay
    • Michael B. AndersonTahir M. HasoonBrendan J. WhelanJ. Spencer WrightRobert L. Reay
    • H01L35/00
    • G01R31/2849G01R31/2874G01R35/007
    • A testing procedure may determine whether a monolithic voltage reference device meets a temperature drift specification. A first non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a first non-room temperature which is substantially different than room temperature. First non-room temperature information may be stored in a memory within the monolithic voltage reference device which is a function of the first non-room temperature output voltage. A second non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a second non-room temperature which is substantially different than the room temperature and the first non-room temperature. Second non-room temperature information may be stored in the memory without destroying the first non-room temperature information which is a function of the second non-room temperature output voltage. A determination may be made whether the monolithic voltage reference device meets the temperature drift specification based on a computation that is a function of both the first non-room temperature information and the second non-room temperature information.
    • 测试程序可以确定单片电压参考装置是否满足温度漂移规范。 单片电压参考装置的第一非室温输出电压可以被测量,而单片电压参考装置处于与室温基本不同的第一非室温。 第一非室温信息可以存储在作为第一非室温输出电压的函数的单片电压参考装置内的存储器中。 单片电压参考装置的第二非室温输出电压可以被测量,而单片电压参考装置处于与室温和第一非室温基本上不同的第二非室温。 可以将第二非室温信息存储在存储器中,而不破坏作为第二非室温输出电压的函数的第一非室温信息。 可以基于作为第一非室内温度信息和第二非室内温度信息的函数的计算来确定单片电压参考装置是否满足温度漂移规格。
    • 8. 发明授权
    • Electrostatic discharge circuit
    • 静电放电电路
    • US5485024A
    • 1996-01-16
    • US175991
    • 1993-12-30
    • Robert L. Reay
    • Robert L. Reay
    • H01L27/02H02H9/04H01L29/74H01L31/111
    • H01L27/0262H02H9/046
    • An ESD protection circuit which provides protection for CMOS devices against ESD potentials of up to about 10 kV is provided. The ESD protection circuit is able to provide protection against both positive-going and negative-going high energy electrical transients, and is able to maintain a high impedance state when driven to a voltage beyond the supply rails of CMOS integrated circuit, but less than tile breakdown voltage of the ESD protection circuit. The ESD protection circuit routes currents associated with ESD potentials to a predetermined arbitrary point which may be selected during the fabrication process to meet the needs of a particular application. The structure of the ESD protection circuit permits the holding current to be adjusted to accommodate the current capacity of various external circuits.
    • 提供了ESD保护电路,其为CMOS器件提供高达约10kV的ESD电压的保护。 ESD保护电路能够提供防止正向和负向高能量电瞬变的保护,并且当被驱动到超过CMOS集成电路的电源轨的电压时能够保持高阻抗状态,但是小于瓦 ESD保护电路的击穿电压。 ESD保护电路将与ESD电位相关联的电流路由到在制造过程期间可以选择以满足特定应用的需要的预定任意点。 ESD保护电路的结构允许调整保持电流以适应各种外部电路的电流容量。