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    • 1. 发明授权
    • Electrostatic discharge clamp using vertical NPN transistor
    • 使用垂直NPN晶体管的静电放电钳
    • US5212618A
    • 1993-05-18
    • US518151
    • 1990-05-03
    • Dennis P. O'NeillWilliam C. RempferRobert C. Dobkin
    • Dennis P. O'NeillWilliam C. RempferRobert C. Dobkin
    • H01L27/02
    • H01L27/0248
    • An electrostatic discharge protection clamp particularly useful for with bipolar and biCMOS integrated circuits include an NPN transistor formed in an isolated tub in an epitaxial layer grown on a substrate. The collector of the NPN transistor is connected to the input terminal, and the emitter of the NPN transistor is connected to the substrate. A resistor interconnects the base and the emitter. Advantageously, the P-doped base can abut the P-doped isolation region forming the tub, and the P-doped isolation region can interconnect the emitter to the substrate. Below BV.sub.CES the clamp will look like an open circuit, and above BV.sub.CES the transistor will start conducting current. The transistor will break down collector to base. Conduction of the transistor causes a voltage drop across the base-emitter junction, and when this voltage drop exceeds the base-emitter forward voltage the transistor will turn on. Once the transistor is turned on and current starts flowing in the emitter, avalanche effects will cause the breakdown voltage to snap back to BV.sub.CEO and remain there until the emitter current drops below some low level, which will be at the end of the electrostatic discharge pulse. In the negative direction the tub to substrate diode provides an effective clamp which will clamp the voltage to a low value and limit the power dissipation in the junction. Alternatively, a bidirectional clamp can be provided in which a second NPN transistor is fabricated in the tub with the emitter of the second transistor connected to the input terminal and the collectors of the two transistors being interconnected by the N-doped epitaxial layer of the tub. The dopant conductivities can be reversed.
    • 特别适用于双极和biCMOS集成电路的静电放电保护钳包括形成在衬底上生长的外延层中的隔离桶中的NPN晶体管。 NPN晶体管的集电极连接到输入端子,NPN晶体管的发射极连接到基板。 电阻器将基极和发射极互连。 有利地,P掺杂的基极可以邻接形成桶的P掺杂隔离区,并且P掺杂隔离区可以将发射极与衬底互连。 在BVCES下方,钳位将看起来像一个开路,而在BVCES之上,晶体管将开始导通电流。 晶体管会将集电极分解为基极。 晶体管的导通导致基极 - 发射极结两端的电压降,当该电压降超过基极 - 发射极正向电压时,晶体管将导通。 一旦晶体管导通并且电流开始在发射极中流动,雪崩效应将导致击穿电压反弹至BVCEO,并保持在那里,直到发射极电流下降到一些低电平,这将在静电放电脉冲结束时 。 在负向方向上,桶至衬底二极管提供有效钳位,其将电压钳位到低值并限制结中的功率耗散。 或者,可以提供双向钳位,其中第二NPN晶体管制造在桶中,其中第二晶体管的发射极连接到输入端,并且两个晶体管的集电极通过盆的N掺杂外延层互连 。 掺杂剂的电导率可以颠倒。
    • 5. 发明授权
    • Circuits and methods for compensating non-linear capacitances to
minimize harmonic distortion
    • 用于补偿非线性电容以最小化谐波失真的电路和方法
    • US5763924A
    • 1998-06-09
    • US647361
    • 1996-05-09
    • Sammy S. LumWilliam C. Rempfer
    • Sammy S. LumWilliam C. Rempfer
    • G11C27/02H01L27/06H01L27/092H01L29/76H01L29/74
    • G11C27/02G11C27/024H01L27/0629H01L27/092
    • A simple, low-cost circuit and method for line zing parasitic capacitances of transistor junctions, independent of the process technology employed, are provided. In the preferred embodiment, the parasitic capacitance of a transistor in a track and hold circuit is linearized by providing a pair of diodes that act inversely to the parasitic diodes formed within the integrated circuit during normal tracking operations. Without the diodes of the present invention, the varying input signals cause the parasitic capacitance to vary, thereby causing harmonic distortion in the track and hold circuit. An alternate embodiment of the present invention is also provided in which a second complementary transistor is provided. The inclusion of the complementary transistor results in a second set of parasitic capacitances that are substantially opposite the parasitic capacitances of the track and hold transistor. Additionally, depending on the ratios of the various components, the techniques of the two embodiments may be, combined, such that additional diode may be added even if the complementary transistor technique is utilized.
    • 提供了一种简单,低成本的电路和方法,用于管线晶体管结的寄生电容,与所采用的工艺技术无关。 在优选实施例中,轨道和保持电路中的晶体管的寄生电容通过在正常跟踪操作期间提供与形成在集成电路内的寄生二极管相反的一对二极管来线性化。 如果没有本发明的二极管,变化的输入信号会引起寄生电容的变化,从而导致轨道和保持电路中的谐波失真。 还提供了本发明的替代实施例,其中提供第二互补晶体管。 包含互补晶体管产生与轨道和保持晶体管的寄生电容基本相反的第二组寄生电容。 另外,根据各种组件的比例,两个实施例的技术可以组合起来使得即使利用互补晶体管技术也可以添加额外的二极管。
    • 6. 发明授权
    • Gradient insensitive split-core digital to analog converter
    • 梯度不敏感的分裂芯数转换器
    • US06937178B1
    • 2005-08-30
    • US10440080
    • 2003-05-15
    • William C. RempferHassan MalikJames L. Brubaker
    • William C. RempferHassan MalikJames L. Brubaker
    • H03M1/06H03M1/76H03M1/78
    • H03M1/0678H03M1/0643H03M1/765
    • Digital to analog converter circuits and methods are provided for producing an analog output voltage indicative of a digital input signal with at least partial insensitivity to error gradients. Described are split-core resistive elements, which include a plurality of one-dimensional or multi-dimensional resistive strings, that may be used to reduce or substantially eliminate the effects that error gradients have on the linearity of the analog output voltages of a resistive string or interpolating amplifier DACs. The resistor strings that make up the split-core resistive elements are configured in such a manner that combining respective output voltages from each of the resistor strings results in an analog output voltage that is at least partially insensitive to the effects of error gradients.
    • 提供数模转换器电路和方法用于产生表示对错误梯度至少部分不敏感的数字输入信号的模拟输出电压。 描述的是分离电阻元件,其包括多个一维或多维电阻串,其可用于减少或基本上消除误差梯度对电阻串的模拟输出电压的线性的影响 或内插放大器DAC。 构成分离电阻元件的电阻串以这样的方式配置,即组合来自每个电阻器串的各个输出电压导致对误差梯度的影响至少部分不敏感的模拟输出电压。
    • 8. 发明授权
    • Analog-to-digital converter
    • 模数转换器
    • US5714955A
    • 1998-02-03
    • US486862
    • 1995-06-07
    • Robert L. ReayYang-Long TeoWilliam C. Rempfer
    • Robert L. ReayYang-Long TeoWilliam C. Rempfer
    • H03M1/00H03M1/12
    • H03M1/002H03M1/12
    • Serial analog-to-digital converters (ADC) in which power down and power up modes are activated by two dual-purpose input signals are provided. The ADCs of the invention eliminate the need for a dedicated power down input line as found on typical serial ADCs. When commanded to do so, the ADC enters into one of two power down modes, NAP or SLEEP. In NAP mode, only those portions of the ADC circuit which consume current and which are capable of waking up almost instantaneously are powered down. In SLEEP mode, the entire ADC circuit is powered down. When commanded to do so, the ADC enters into a power up mode, applying current to every portion of the ADC circuit. Wake-up from the NAP mode takes place almost instantaneously. Wake-up from the SLEEP mode requires additional time. From either mode, a signal is generated when the ADC conversion circuit, which preferably includes a reference voltage generator, has stabilized sufficiently for the ADC to perform analog-to-digital conversion.
    • 提供了通过两个双用途输入信号激活掉电和上电模式的串行模数转换器(ADC)。 本发明的ADC消除了对典型串行ADC所发现的专用掉电输入线的需要。 当指令这样做时,ADC进入两种掉电模式之一NAP或SLEEP。 在NAP模式下,只有那些消耗电流且几乎瞬间唤醒的ADC电路的那些部分掉电。 在休眠模式下,整个ADC电路掉电。 当指令这样做时,ADC进入上电模式,将电流施加到ADC电路的每个部分。 从NAP模式唤醒几乎瞬间发生。 从休眠模式唤醒需要额外的时间。 在任一模式下,当ADC转换电路(其优选地包括参考电压发生器)已经足够稳定以使ADC执行模数转换时产生信号。