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1. 发明授权

US07846848B2 Cluster tool with integrated metrology chamber for transparent substrates 有权
标题翻译：用于透明基板的集成测量室的集群工具
公开(公告)号：US07846848B2
公开(公告)日：2010-12-07
申请号：US11532195
申请日：2006-09-15
申请人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
发明人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
IPC分类号： H01L21/302
CPC分类号： G03F1/30 , H01L21/31116 , H01L21/67742
摘要： The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.
摘要翻译：本发明的实施例涉及一种用于测量半导体光掩模处理系统中的蚀刻深度的方法和装置。在一个实施例中，用于蚀刻衬底的方法包括在与处理系统的真空传送室耦合的蚀刻室中蚀刻透明衬底，将透明衬底转移到耦合到处理系统的测量单元，以及测量至少一个蚀刻深度或临界尺寸，使用测量单元中的测量工具。

2. 发明申请

US20070012660A1 CLUSTER TOOL WITH INTEGRATED METROLOGY CHAMBER FOR TRANSPARENT SUBSTRATES 有权
标题翻译：用于透明基板的集成式计量室的集群工具
公开(公告)号：US20070012660A1
公开(公告)日：2007-01-18
申请号：US11532195
申请日：2006-09-15
申请人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
发明人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
IPC分类号： G01L21/30 , H01L21/306
CPC分类号： G03F1/30 , H01L21/31116 , H01L21/67742
摘要： The embodiments of the invention relate to a method and apparatus for measuring the etch depth in a semiconductor photomask processing system. In one embodiment, a method for etching a substrate includes etching a transparent substrate in an etch chamber coupled to a vacuum transfer chamber of a processing system, transferring the transparent substrate to a measurement cell coupled to the processing system, and measuring at least one of etch depth or critical dimension using a measurement tool in the measurement cell.
摘要翻译：本发明的实施例涉及一种用于测量半导体光掩模处理系统中的蚀刻深度的方法和装置。在一个实施例中，用于蚀刻衬底的方法包括在与处理系统的真空传送室耦合的蚀刻室中蚀刻透明衬底，将透明衬底转移到耦合到处理系统的测量单元，以及测量至少一个蚀刻深度或临界尺寸，使用测量单元中的测量工具。

3. 发明申请

US20060154388A1 Integrated metrology chamber for transparent substrates 审中-公开
标题翻译：用于透明基板的集成计量室
公开(公告)号：US20060154388A1
公开(公告)日：2006-07-13
申请号：US11031400
申请日：2005-01-08
申请人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
发明人： Richard Lewington , Corey Collard , Scott Anderson , Khiem Nguyen
IPC分类号： H01L21/66 , C23C14/00
CPC分类号： G03F1/30 , H01L21/31116 , H01L21/67742
摘要： The embodiments of the invention relate to a method and apparatus for measuring the etch depth between etching for an alternate phase shift photomask in a semiconductor photomask processing system. The apparatus for measuring the etch depth of a substrate in an etch processing system comprises a measurement cell coupled to a mainframe of the etch processing system, and an etch depth measurement tool coupled to the bottom of the measurement cell, wherein an opening at the bottom of the measurement cell allows light beams to pass between the etch depth measurement tool and the substrate. The embodiments of the invention also relate to the method of preparing an alternate phase shift mask by partially etching the quartz substrate to an initial etch depth, followed by measuring the etch depth with an integrated measurement tool. The substrate is then etched and measured repeatedly until the targeted etch depth has been reached.
摘要翻译：本发明的实施例涉及一种用于测量半导体光掩模处理系统中的替代相移光掩模的蚀刻之间的蚀刻深度的方法和装置。用于在蚀刻处理系统中测量衬底的蚀刻深度的装置包括耦合到蚀刻处理系统的主机的测量单元和耦合到测量单元的底部的蚀刻深度测量工具，其中底部的开口的测量单元允许光束在蚀刻深度测量工具和衬底之间通过。本发明的实施例还涉及通过将石英衬底部分蚀刻到初始蚀刻深度，然后用集成测量工具测量蚀刻深度来制备交替相移掩模的方法。然后重复蚀刻和测量衬底，直到达到目标蚀刻深度。

4. 发明申请

US20070097383A1 METHOD AND APPARATUS FOR INTEGRATING METROLOGY WITH ETCH PROCESSING 有权
标题翻译：用ETAC处理集成度量的方法和装置
公开(公告)号：US20070097383A1
公开(公告)日：2007-05-03
申请号：US11561995
申请日：2006-11-21
申请人： KHIEM NGUYEN , Richard Lewington
发明人： KHIEM NGUYEN , Richard Lewington
IPC分类号： G01B11/14
CPC分类号： H01L21/68707 , G03F1/80 , H01J37/32743 , H01L21/31116 , H01L21/6719 , H01L21/67207 , H01L21/67265 , H01L21/67742
摘要： An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the etch chamber and the metrology chamber. A method of processing a substrate and performing metrology measurement using this apparatus is also disclosed.
摘要翻译：公开了一种用于集成度量和蚀刻处理的装置。该装置包括具有传送室，蚀刻室和计量室的多室系统，以及被配置为在蚀刻室和计量室之间传送基板的机器人。还公开了使用该装置处理基板并进行测量测量的方法。

5. 发明申请

US20080102202A1 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US20080102202A1
公开(公告)日：2008-05-01
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

6. 发明申请

US20080102001A1 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US20080102001A1
公开(公告)日：2008-05-01
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

7. 发明申请

US20070257009A1 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US20070257009A1
公开(公告)日：2007-11-08
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
发明人： Madhavi Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim Ibrahim , Michael Grimbergen , Renee Koch , Sheeba Panayil
IPC分类号： C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

8. 发明授权

US07943005B2 Method and apparatus for photomask plasma etching 有权
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US07943005B2
公开(公告)日：2011-05-17
申请号：US11554502
申请日：2006-10-30
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： H01L21/306
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，该装置包括具有适于接收光掩模的支撑基座的处理室。离子中性屏蔽设置在基座上方，偏转板组件设置在离子中性屏蔽上方。导流板组件限定了朝向离子中性屏蔽的工艺气体的气体流动方向，而离子中性屏蔽用于建立用于蚀刻光掩模的等离子体中的离子和中性物质的期望分布。

9. 发明授权

US07601272B2 Method and apparatus for integrating metrology with etch processing 有权
标题翻译：用于将测量与蚀刻处理集成的方法和装置
公开(公告)号：US07601272B2
公开(公告)日：2009-10-13
申请号：US11561995
申请日：2006-11-21
申请人： Khiem K. Nguyen , Richard Lewington
发明人： Khiem K. Nguyen , Richard Lewington
IPC分类号： G01L21/30 , B44C1/22
CPC分类号： H01L21/68707 , G03F1/80 , H01J37/32743 , H01L21/31116 , H01L21/6719 , H01L21/67207 , H01L21/67265 , H01L21/67742
摘要： An apparatus for integrating metrology and etch processing is disclosed. The apparatus comprises a multi-chamber system having a transfer chamber, an etch chamber and a metrology chamber, and a robot configured to transfer a substrate between the etch chamber and the metrology chamber. A method of processing a substrate and performing metrology measurement using this apparatus is also disclosed.
摘要翻译：公开了一种用于集成度量和蚀刻处理的装置。该装置包括具有传送室，蚀刻室和计量室的多室系统，以及被配置为在蚀刻室和计量室之间传送基板的机器人。还公开了使用该装置处理基板并进行测量测量的方法。

10. 发明授权

US07431797B2 Plasma reactor with a dynamically adjustable plasma source power applicator 有权
标题翻译：具有动态可调等离子体源功率施加器的等离子体反应器
公开(公告)号：US07431797B2
公开(公告)日：2008-10-07
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译：用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置，腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

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