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1. 发明申请

US20080102202A1 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US20080102202A1
公开(公告)日：2008-05-01
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

2. 发明申请

US20080102001A1 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US20080102001A1
公开(公告)日：2008-05-01
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

3. 发明授权

US07976671B2 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US07976671B2
公开(公告)日：2011-07-12
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3063 , C23C16/505
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

4. 发明授权

US08017029B2 Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside 有权
标题翻译：根据观察掩模背面的光学传感器阵列的输出来控制反应器可调谐元件的等离子体掩模蚀刻方法
公开(公告)号：US08017029B2
公开(公告)日：2011-09-13
申请号：US11589477
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： G01R31/00
CPC分类号： H01J37/32935 , G03F1/80
摘要： A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.
摘要翻译：等离子体蚀刻方法包括通过工件的背面同时以工件为透明的波长范围的光照亮工件的前表面上的多个位置的阵列，同时观察从多个位置的阵列反射到背面的光的工件。该方法还包括：从位于工件前侧的位置阵列反射的光中确定多个位置阵列处的多个蚀刻深度，并从多个蚀刻深度中推导穿过该阵列阵列的蚀刻速率的空间分布。该方法还包括通过调节反应器的可调谐元件来改变蚀刻速率分布。

5. 发明申请

US20080099434A1 Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside 有权
标题翻译：根据观察掩模背面的光学传感器阵列的输出来控制反应器可调谐元件的等离子体掩模蚀刻方法
公开(公告)号：US20080099434A1
公开(公告)日：2008-05-01
申请号：US11589477
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , G03F1/80
摘要： A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.
摘要翻译：等离子体蚀刻方法包括通过工件的背面同时以工件为透明的波长范围的光照亮工件的前表面上的多个位置的阵列，同时观察从多个位置的阵列反射到背面的光的工件。该方法还包括：从位于工件前侧的位置阵列反射的光中确定多个位置阵列处的多个蚀刻深度，并从多个蚀刻深度中推导穿过该阵列阵列的蚀刻速率的空间分布。该方法还包括通过调节反应器的可调谐元件来改变蚀刻速率分布。

6. 发明授权

US09218944B2 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US09218944B2
公开(公告)日：2015-12-22
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01J37/32 , H01L21/67 , H01L21/68 , C23C16/455 , C23C16/458 , C23C16/52 , H01L21/687
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

7. 发明申请

US20080099451A1 Workpiece rotation apparatus for a plasma reactor system 审中-公开
标题翻译：用于等离子体反应器系统的工件旋转装置
公开(公告)号：US20080099451A1
公开(公告)日：2008-05-01
申请号：US11589498
申请日：2006-10-30
申请人： Richard Lewington , Khiem K. Nguyen , Ajay Kumar , Ibrahim M. Ibrahim , Madhavi R. Chandrachood , Scott Alan Anderson
发明人： Richard Lewington , Khiem K. Nguyen , Ajay Kumar , Ibrahim M. Ibrahim , Madhavi R. Chandrachood , Scott Alan Anderson
IPC分类号： H01L21/3065
CPC分类号： H01L21/67766 , H01L21/67069
摘要： A plasma processing system for processing a planar workpiece is provided that has the capability of changing the rotational position of a workpiece relative to a plasma processing chamber of the system. The system workpiece transfer apparatus coupled to the reactor chambers of the system. The workpiece transfer apparatus is capable of transferring workpieces to and from each of the chambers. The system further includes a factory interface coupled to the workpiece transfer apparatus for transferring workpieces from and to a factory environment external of the plasma processing system. The factory interface includes (a) a frame defining an internal volume, (b) a rotatable and translatable arm supported on the frame within the internal volume, (c) a workpiece-handling blade attached to an outer end of the arm, and (d) a stationary workpiece-holding support bracket that facilitates rotation of a workpiece.
摘要翻译：提供了一种用于处理平面工件的等离子体处理系统，其具有改变工件相对于系统的等离子体处理室的旋转位置的能力。系统工件传送装置耦合到系统的反应室。工件传送装置能够将工件传送到每个室中。该系统还包括耦合到工件传送装置的工厂接口，用于从等离子体处理系统外部的工厂环境传送工件。工厂接口包括（a）限定内部容积的框架，（b）支撑在内部容积内的框架上的可旋转和可平移臂，（c）附接到臂的外端的工件处理刀片，和 d）固定的工件保持支撑支架，其有助于工件的旋转。

8. 发明申请

US20080100222A1 Mask etch plasma reactor with cathode providing a uniform distribution of etch rate 有权
标题翻译：具有阴极的掩模蚀刻等离子体反应器提供均匀的蚀刻速率分布
公开(公告)号：US20080100222A1
公开(公告)日：2008-05-01
申请号：US11589337
申请日：2006-10-30
申请人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
发明人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , H01J37/3255 , H01L21/67253 , H01L21/68742 , H01L21/68757 , H01L21/68785
摘要： A plasma reactor for etching a workpiece such as a rectangular or square mask, includes a vacuum chamber having a ceiling and a sidewall and a workpiece support pedestal within the chamber including a cathode having a surface for supporting a workpiece, the surface comprising plural respective zones, the respective zones of the surface being formed of respective materials of different electrical characteristics. The zones can be arranged concentrically relative to an axis of symmetry of the wafer support pedestal.
摘要翻译：用于蚀刻诸如矩形或正方形掩模的工件的等离子体反应器包括具有天花板和侧壁的真空室以及腔室内的工件支撑基座，其包括具有用于支撑工件的表面的阴极，该表面包括多个相应的区域表面的各个区域由具有不同电特性的各种材料形成。这些区域可以相对于晶片支撑基座的对称轴同心布置。

9. 发明申请

US20080099437A1 Plasma reactor for processing a transparent workpiece with backside process endpoint detection 审中-公开
标题翻译：用于处理透明工件的等离子体反应器，具有背面处理端点检测
公开(公告)号：US20080099437A1
公开(公告)日：2008-05-01
申请号：US11589476
申请日：2006-10-30
申请人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
发明人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： G03F1/80 , H01J37/32082 , H01J37/32935 , H01J37/32963 , H01J37/32972
摘要： A plasma reactor is provided for processing a workpiece such as a transparent mask or a semiconductor wafer that is transparent at least within a range of wavelengths. The reactor includes a vacuum chamber having a sidewall and a ceiling. A workpiece support pedestal has a support surface facing said ceiling and lying within said chamber for supporting a workpiece. A passage extends through said workpiece support pedestal from a bottom thereof and forms an opening through said support surface. The reactor further includes an optical fiber extending through said passage. The optical fiber has: (a) a viewing end with a field of view through said opening in said support surface, and (b) an output end outside of said chamber. The reactor also includes an optical sensor coupled to said output end of said optical fiber which is responsive in said range of wavelengths.
摘要翻译：提供等离子体反应器，用于处理至少在波长范围内透明的工件，例如透明掩模或半导体晶片。反应器包括具有侧壁和天花板的真空室。工件支撑基座具有面向所述天花板并位于所述腔室内的支撑表面，用于支撑工件。通道从其底部延伸穿过所述工件支撑座，并形成通过所述支撑表面的开口。反应器还包括延伸穿过所述通道的光纤。光纤具有：（a）通过所述支撑表面中的所述开口具有视场的观察端，以及（b）所述室外的输出端。反应器还包括耦合到所述光纤的所述输出端的光学传感器，其在所述波长范围内是响应的。

10. 发明申请

US20080099432A1 Process for etching a transparent workpiece including backside endpoint detection steps 有权
标题翻译：用于蚀刻透明工件的工艺，包括背面端点检测步骤
公开(公告)号：US20080099432A1
公开(公告)日：2008-05-01
申请号：US11589652
申请日：2006-10-30
申请人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
发明人： Richard Lewington , Michael N. Grimbergen , Khiem K. Nguyen , Darin Bivens , Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： C23F1/00
CPC分类号： G03F1/80 , H01J37/32963
摘要： A method is provided for defining a pattern on a workpiece such as a transparent substrate or mask or a workpiece that is at least transparent within a range of optical wavelengths. The method includes defining a photoresist pattern on the top surface of the mask, the pattern including a periodic structure having a periodic spacing between elements of the structure. The method further includes placing the mask on a support pedestal in a plasma reactor chamber and generating a plasma in the chamber to etch the top surface of the mask through openings in the photoresist pattern. The method also includes transmitting light through the pedestal and through the bottom surface of the mask, while viewing through the support pedestal light reflected from the periodic structure and detecting an interference pattern in the reflected light. The method further includes determining from the interference pattern a depth to which periodic structure has been etched in the top surface.
摘要翻译：提供了一种用于在诸如透明基板或掩模或在光波长范围内至少透明的工件的工件上限定图案的方法。该方法包括在掩模的顶表面上限定光致抗蚀剂图案，该图案包括在该结构的元件之间具有周期性间隔的周期性结构。该方法还包括将掩模放置在等离子体反应器室中的支撑基座上并在腔室中产生等离子体，以通过光致抗蚀剂图案中的开口蚀刻掩模的顶表面。该方法还包括通过基座传送光并通过掩模的底表面，同时通过从周期性结构反射的支撑基座光线观察并检测反射光中的干涉图案。该方法还包括从干涉图案确定在顶表面中蚀刻了周期结构的深度。

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