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1. 发明授权

US07955516B2 Etching of nano-imprint templates using an etch reactor 有权
标题翻译：使用蚀刻反应器蚀刻纳米压印模板
公开(公告)号：US07955516B2
公开(公告)日：2011-06-07
申请号：US11836258
申请日：2007-08-09
申请人： Madhavi R. Chandrachood , Ajay Kumar
发明人： Madhavi R. Chandrachood , Ajay Kumar
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/80 , G03F7/0002
摘要： Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer, etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step, and etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein at least one of the first or second etching steps utilizes a plasma formed from a processing gas comprising oxygen, halogen and chlorine containing gases. In one embodiment, the process gas is utilized in both the first and second etching steps. In another embodiment, the first and second etching steps are performed in the same processing chamber.
摘要翻译：提供了使用印刷抗蚀剂材料蚀刻金属层的方法。在一个实施例中，一种用于处理光刻掩模版的方法包括提供掩模版，其具有形成在光学透明基板上的金属光掩模层和沉积在金属光掩模层上的压印抗蚀剂材料，蚀刻印刷的抗蚀剂材料的凹陷区域以暴露部分在第一蚀刻步骤中的金属光掩模层，以及在第二蚀刻步骤中通过印刷的抗蚀剂材料蚀刻金属光掩模层的暴露部分，其中第一或第二蚀刻步骤中的至少一个利用由处理气体形成的等离子体包括氧，卤素和含氯气体。在一个实施例中，处理气体用于第一和第二蚀刻步骤。在另一个实施例中，第一和第二蚀刻步骤在相同的处理室中进行。

2. 发明授权

US07521000B2 Process for etching photomasks 有权
标题翻译：蚀刻光掩模的工艺
公开(公告)号：US07521000B2
公开(公告)日：2009-04-21
申请号：US10925887
申请日：2004-08-25
申请人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
发明人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
IPC分类号： C03C15/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。一方面，提供了一种处理基板的方法，包括：将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

3. 发明申请

US20080105649A1 ETCHING OF NANO-IMPRINT TEMPLATES USING AN ETCH REACTOR 有权
标题翻译：使用蚀刻反应器蚀刻纳米印模
公开(公告)号：US20080105649A1
公开(公告)日：2008-05-08
申请号：US11836258
申请日：2007-08-09
申请人： MADHAVI R. CHANDRACHOOD , Ajay Kumar
发明人： MADHAVI R. CHANDRACHOOD , Ajay Kumar
IPC分类号： B44C1/22
CPC分类号： C23F4/00 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/80 , G03F7/0002
摘要： Methods for etching a metal layer using an imprinted resist material are provided. In one embodiment, a method for processing a photolithographic reticle includes providing a reticle having a metal photomask layer formed on an optically transparent substrate and an imprinted resist material deposited on the metal photomask layer, etching recessed regions of the imprinted resist material to expose portions of the metal photomask layer in a first etching step, and etching the exposed portions of the metal photomask layer through the imprinted resist material in a second etching step, wherein at least one of the first or second etching steps utilizes a plasma formed from a processing gas comprising oxygen, halogen and chlorine containing gases. In one embodiment, the process gas is utilized in both the first and second etching steps. In another embodiment, the first and second etching steps are performed in the same processing chamber.
摘要翻译：提供了使用印刷抗蚀剂材料蚀刻金属层的方法。在一个实施例中，一种用于处理光刻掩模版的方法包括提供掩模版，其具有形成在光学透明基板上的金属光掩模层和沉积在金属光掩模层上的压印抗蚀剂材料，蚀刻印刷的抗蚀剂材料的凹陷区域以暴露部分在第一蚀刻步骤中的金属光掩模层，以及在第二蚀刻步骤中通过印刷的抗蚀剂材料蚀刻金属光掩模层的暴露部分，其中第一或第二蚀刻步骤中的至少一个利用由处理气体形成的等离子体包括氧，卤素和含氯气体。在一个实施例中，处理气体用于第一和第二蚀刻步骤。在另一个实施例中，第一和第二蚀刻步骤在相同的处理室中进行。

4. 发明申请

US20080102202A1 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US20080102202A1
公开(公告)日：2008-05-01
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

5. 发明申请

US20080102001A1 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US20080102001A1
公开(公告)日：2008-05-01
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

6. 发明授权

US07943005B2 Method and apparatus for photomask plasma etching 有权
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US07943005B2
公开(公告)日：2011-05-17
申请号：US11554502
申请日：2006-10-30
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： H01L21/306
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，该装置包括具有适于接收光掩模的支撑基座的处理室。离子中性屏蔽设置在基座上方，偏转板组件设置在离子中性屏蔽上方。导流板组件限定了朝向离子中性屏蔽的工艺气体的气体流动方向，而离子中性屏蔽用于建立用于蚀刻光掩模的等离子体中的离子和中性物质的期望分布。

7. 发明申请

US20100178600A1 PROCESS FOR ETCHING A METAL LAYER SUITABLE FOR USE IN PHOTOMASK FABRICATION 有权
标题翻译：用于蚀刻适用于光电制造的金属层的工艺
公开(公告)号：US20100178600A1
公开(公告)日：2010-07-15
申请号：US12728455
申请日：2010-03-22
申请人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
发明人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。一方面，提供了一种处理基板的方法，包括将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

8. 发明授权

US07431797B2 Plasma reactor with a dynamically adjustable plasma source power applicator 有权
标题翻译：具有动态可调等离子体源功率施加器的等离子体反应器
公开(公告)号：US07431797B2
公开(公告)日：2008-10-07
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译：用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置，腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

9. 发明申请

US20080099451A1 Workpiece rotation apparatus for a plasma reactor system 审中-公开
标题翻译：用于等离子体反应器系统的工件旋转装置
公开(公告)号：US20080099451A1
公开(公告)日：2008-05-01
申请号：US11589498
申请日：2006-10-30
申请人： Richard Lewington , Khiem K. Nguyen , Ajay Kumar , Ibrahim M. Ibrahim , Madhavi R. Chandrachood , Scott Alan Anderson
发明人： Richard Lewington , Khiem K. Nguyen , Ajay Kumar , Ibrahim M. Ibrahim , Madhavi R. Chandrachood , Scott Alan Anderson
IPC分类号： H01L21/3065
CPC分类号： H01L21/67766 , H01L21/67069
摘要： A plasma processing system for processing a planar workpiece is provided that has the capability of changing the rotational position of a workpiece relative to a plasma processing chamber of the system. The system workpiece transfer apparatus coupled to the reactor chambers of the system. The workpiece transfer apparatus is capable of transferring workpieces to and from each of the chambers. The system further includes a factory interface coupled to the workpiece transfer apparatus for transferring workpieces from and to a factory environment external of the plasma processing system. The factory interface includes (a) a frame defining an internal volume, (b) a rotatable and translatable arm supported on the frame within the internal volume, (c) a workpiece-handling blade attached to an outer end of the arm, and (d) a stationary workpiece-holding support bracket that facilitates rotation of a workpiece.
摘要翻译：提供了一种用于处理平面工件的等离子体处理系统，其具有改变工件相对于系统的等离子体处理室的旋转位置的能力。系统工件传送装置耦合到系统的反应室。工件传送装置能够将工件传送到每个室中。该系统还包括耦合到工件传送装置的工厂接口，用于从等离子体处理系统外部的工厂环境传送工件。工厂接口包括（a）限定内部容积的框架，（b）支撑在内部容积内的框架上的可旋转和可平移臂，（c）附接到臂的外端的工件处理刀片，和 d）固定的工件保持支撑支架，其有助于工件的旋转。

10. 发明授权

US08568553B2 Method and apparatus for photomask plasma etching 有权
标题翻译：光掩模等离子体蚀刻的方法和装置
公开(公告)号：US08568553B2
公开(公告)日：2013-10-29
申请号：US13045239
申请日：2011-03-10
申请人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
发明人： Ajay Kumar , Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Amitabh Sabharwal , Sheeba J. Panayil , Alan Hiroshi Ouye
IPC分类号： H01L21/306
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： A method and apparatus for etching photomasks is provided herein. In one embodiment, the apparatus comprises a process chamber having a support pedestal adapted for receiving a photomask. An ion-neutral shield is disposed above the pedestal and a deflector plate assembly is provided above the ion-neutral shield. The deflector plate assembly defines a gas flow direction for process gases towards the ion-neutral shield, while the ion-neutral shield is used to establish a desired distribution of ion and neutral species in a plasma for etching the photomask.
摘要翻译：本文提供了蚀刻光掩模的方法和设备。在一个实施例中，该装置包括具有适于接收光掩模的支撑基座的处理室。离子中性屏蔽设置在基座上方，偏转板组件设置在离子中性屏蔽层上方。导流板组件限定了朝向离子中性屏蔽的工艺气体的气体流动方向，而离子中性屏蔽用于建立用于蚀刻光掩模的等离子体中的离子和中性物质的期望分布。

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