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1. 发明申请

US20080102202A1 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US20080102202A1
公开(公告)日：2008-05-01
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

2. 发明申请

US20080102001A1 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US20080102001A1
公开(公告)日：2008-05-01
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

3. 发明授权

US08017029B2 Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside 有权
标题翻译：根据观察掩模背面的光学传感器阵列的输出来控制反应器可调谐元件的等离子体掩模蚀刻方法
公开(公告)号：US08017029B2
公开(公告)日：2011-09-13
申请号：US11589477
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： G01R31/00
CPC分类号： H01J37/32935 , G03F1/80
摘要： A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.
摘要翻译：等离子体蚀刻方法包括通过工件的背面同时以工件为透明的波长范围的光照亮工件的前表面上的多个位置的阵列，同时观察从多个位置的阵列反射到背面的光的工件。该方法还包括：从位于工件前侧的位置阵列反射的光中确定多个位置阵列处的多个蚀刻深度，并从多个蚀刻深度中推导穿过该阵列阵列的蚀刻速率的空间分布。该方法还包括通过调节反应器的可调谐元件来改变蚀刻速率分布。

4. 发明申请

US20080099434A1 Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside 有权
标题翻译：根据观察掩模背面的光学传感器阵列的输出来控制反应器可调谐元件的等离子体掩模蚀刻方法
公开(公告)号：US20080099434A1
公开(公告)日：2008-05-01
申请号：US11589477
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , G03F1/80
摘要： A plasma etch method includes simultaneously illuminating an array of plural locations on front surface of the workpiece through the backside of the workpiece with light of a wavelength range for which the workpiece is transparent, while viewing light reflected from the array of plural locations to the backside of the workpiece. The method further includes determining plural etch depths at the array of locations from the light reflected from the array of locations on the front side of the workpiece, and deducing from the plural etch depths a spatial distribution of etch rate across the array of locations. The method also includes changing the etch rate distribution by adjusting a tunable element of the reactor.
摘要翻译：等离子体蚀刻方法包括通过工件的背面同时以工件为透明的波长范围的光照亮工件的前表面上的多个位置的阵列，同时观察从多个位置的阵列反射到背面的光的工件。该方法还包括：从位于工件前侧的位置阵列反射的光中确定多个位置阵列处的多个蚀刻深度，并从多个蚀刻深度中推导穿过该阵列阵列的蚀刻速率的空间分布。该方法还包括通过调节反应器的可调谐元件来改变蚀刻速率分布。

5. 发明授权

US07976671B2 Mask etch plasma reactor with variable process gas distribution 有权
标题翻译：具有可变工艺气体分布的掩模蚀刻等离子体反应器
公开(公告)号：US07976671B2
公开(公告)日：2011-07-12
申请号：US11589426
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01L21/3063 , C23C16/505
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply. Plural external gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, each of the valves having: (a) a controlled gas output port coupled to a respective one of the plural passages at the external surface of the ring and (b) a valve control input. A gas valve configuration controller controls the valve control input of each of the valves.
摘要翻译：用于处理诸如掩模或晶片的工件的等离子体反应器包括具有圆柱形侧壁，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上并支撑天花板的环的真空室，所述环包括外表面和内表面。耦合到施加器的RF等离子体源功率施加器和RF源功率发生器提供等离子体源功率。多个通道沿径向延伸穿过环从外表面到内表面并沿环的圆周间隔开。工艺气体供应提供工艺气体。在室外部的外部气体流动导管装置围绕室的圆周延伸并且联接到工艺气体供应。在室外部的多个外部气体流量阀沿着导管间隔开的相应位置联接到外部导管，每个阀具有：（a）在外部连接到多个通道中的相应一个的受控气体输出端口环的表面和（b）阀控制输入。气阀配置控制器控制每个阀的阀门控制输入。

6. 发明授权

US09218944B2 Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors 有权
标题翻译：掩模蚀刻等离子体反应器具有观察工件背面的光学传感器阵列和响应于光学传感器控制的可调谐元件
公开(公告)号：US09218944B2
公开(公告)日：2015-12-22
申请号：US11589598
申请日：2006-10-30
申请人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
发明人： Madhavi R. Chandrachood , Michael N. Grimbergen , Khiem K. Nguyen , Richard Lewington , Ibrahim M. Ibrahim , Sheeba J. Panayil , Ajay Kumar
IPC分类号： H01J37/32 , H01L21/67 , H01L21/68 , C23C16/455 , C23C16/458 , C23C16/52 , H01L21/687
CPC分类号： H01J37/3211 , C23C16/45561 , C23C16/45563 , C23C16/4586 , C23C16/52 , H01J37/32449 , H01J37/32715 , H01J37/32935 , H01J37/32963 , H01J2237/334 , H01L21/67253 , H01L21/68785
摘要： A plasma reactor has an array of passages extending through its workpiece support pedestal from a bottom thereof that forms a two-dimensional array of openings in the support surface. The reactor further includes a plurality of optical fibers, each fiber extending through a respective one of the passages. Optical sensing apparatus is coupled to the output ends of the optical fibers and is responsive in the range of wavelengths. The reactor further includes a tunable element capable of changing a two-dimensional etch rate distribution across the surface of a workpiece supported on the pedestal, and a process controller connected to receive information from the optical sensing apparatus and to transmit control commands to the tunable element.
摘要翻译：等离子体反应器具有从其底部延伸穿过其工件支撑基座的通道阵列，其在支撑表面中形成开口的二维阵列。反应器还包括多根光纤，每根光纤延伸通过相应的一个通道。光学传感装置耦合到光纤的输出端并且在波长范围内是响应的。反应器还包括能够改变穿过支撑在基座上的工件的表面上的二维蚀刻速率分布的可调谐元件，以及连接到从光学感测装置接收信息并将控制命令发送到可调元件的过程控制器。

7. 发明授权

US07431797B2 Plasma reactor with a dynamically adjustable plasma source power applicator 有权
标题翻译：具有动态可调等离子体源功率施加器的等离子体反应器
公开(公告)号：US07431797B2
公开(公告)日：2008-10-07
申请号：US11416802
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01L21/67069
摘要： A plasma reactor for processing a workpiece includes a process chamber having an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to the ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and having a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to the inner and outer applicator portions, and tilt apparatus supporting at least the outer applicator portion and capable of tilting at least the outer applicator portion about a radial axis perpendicular to the axis of symmetry and capable of rotating at least the outer applicator portion about the axis of symmetry. The reactor can further include elevation apparatus for changing the location of the inner and outer portions relative to one another along the vertical axis of symmetry. In a preferred embodiment, the elevation apparatus includes a lift actuator for raising and lowering the inner applicator portion along the vertical axis of symmetry.
摘要翻译：用于处理工件的等离子体反应器包括处理室，其具有包括天花板的外壳，其具有垂直于天花板的垂直对称轴线，腔室内的工件支撑基座和大体上面对天花板的工艺气体注入装置，腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并具有径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到内部和外部施加器部分的RF功率设备，以及至少支撑外部施加器部分和能够使至少外部施加部分围绕垂直于对称轴线的径向轴线倾斜，并且能够使至少外部施加器部分围绕对称轴线旋转。反应器可以进一步包括升高装置，用于沿垂直对称轴线相对于彼此改变内部和外部部分的位置。在优选实施例中，升降装置包括用于沿着垂直对称轴升高和降低内部施加器部分的升降致动器。

8. 发明授权

US07504041B2 Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator 有权
标题翻译：使用动态可调的等离子体源功率施加器在等离子体反应器中处理工件的方法
公开(公告)号：US07504041B2
公开(公告)日：2009-03-17
申请号：US11416801
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/321 , H01L21/67069
摘要： A method for processing a workpiece in a plasma reactor chamber having radially inner and outer source power applicators at a ceiling of the chamber facing the workpiece, the inner and outer source power applicators and the workpiece sharing a common axis of symmetry. The method includes applying RF source power to the source power applicator, and introducing a process gas into the reactor chamber so as to carry out a plasma process on the workpiece characterized by a plasma process parameter, the plasma process parameter having a spatial distribution across the surface of the workpiece. The method further includes rotating at least the outer RF source power applicator about a radial tilt axis to a position at which the spatial distribution of the plasma process parameter has at least a nearly minimal non-symmetry relative to the common axis of symmetry, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution has at least a nearly minimal non-uniformity across the surface of the workpiece.
摘要翻译：一种用于在等离子体反应器室中处理工件的方法，该等离子体反应器腔室具有径向内部和外部源功率施加器，位于腔室的面向工件的顶板处，内部和外部源功率施加器和工件共享公共对称轴线。该方法包括将RF源功率应用于源功率施加器，以及将工艺气体引入反应室，以便在工件上进行等离子体处理，其特征在于等离子体工艺参数，等离子体工艺参数具有横跨工件表面。该方法还包括至少将外部RF源功率施加器围绕径向倾斜轴线旋转到等离子体处理参数的空间分布相对于公共对称轴线具有至少几乎最小的非对称性的位置，并且平移所述内源电源施加器相对于所述外源功率施加器沿着所述对称轴线到所述空间分布在所述工件的所述表面上具有至少几乎最小不均匀性的位置。

9. 发明授权

US07520999B2 Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：在等离子体反应器中处理工件的方法，其中等离子体源功率施加器和工件相对于彼此动态调节
公开(公告)号：US07520999B2
公开(公告)日：2009-04-21
申请号：US11416744
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： B44C1/22 , H01L21/00
CPC分类号： H01J37/32568 , H01J37/321
摘要： A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while rotating at least one of (a) the workpiece, (b) the outer source power applicator, about a radial tilt axis to a position at which the plasma distribution is nearly symmetrical, and translating the inner source power applicator relative to the outer source power applicator along the axis of symmetry to a location at which the spatial distribution is nearly uniform.
摘要翻译：一种通过将RF源功率施加到内源功率施加器和外源功率施加器来处理等离子体反应器室中的工件的方法，以及在（a）工件，（b）外部源电源施加器，围绕径向倾斜轴线到等离子体分布近似对称的位置，以及将内源功率施加器相对于外源功率施加器沿着对称轴线平移到空间分布几乎均匀的位置。

10. 发明授权

US07419551B2 Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another 有权
标题翻译：一种具有用于相对于彼此动态地调节等离子体源功率施加器和工件的装置的等离子体反应器
公开(公告)号：US07419551B2
公开(公告)日：2008-09-02
申请号：US11416547
申请日：2006-05-03
申请人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
发明人： Madhavi R. Chandrachood , Richard Lewington , Darin Bivens , Ajay Kumar , Ibrahim M. Ibrahim , Michael N. Grimbergen , Renee Koch , Sheeba J. Panayil
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , H01L21/68764
摘要： A plasma reactor for processing a workpiece includes a process chamber comprising an enclosure including a ceiling and having a vertical axis of symmetry generally perpendicular to said ceiling, a workpiece support pedestal inside the chamber and generally facing the ceiling, process gas injection apparatus coupled to the chamber and a vacuum pump coupled to the chamber. The reactor further includes a plasma source power applicator overlying the ceiling and comprising a radially inner applicator portion and a radially outer applicator portion, and RF power apparatus coupled to said inner and outer applicator portions, and tilt apparatus capable of tilting either the workpiece support pedestal or the outer applicator portion about a radial axis perpendicular to said axis of symmetry and capable of rotating said workpiece support pedestal about said axis of symmetry. In a preferred embodiment, the reactor further includes apparatus for effecting axially symmetrical adjustments of plasma distribution, which may be either (or both) elevation apparatus for changing the location of said inner and outer portions relative to one another along said vertical axis of symmetry, or apparatus for apportioning the RF power levels applied to the inner and outer applicator portions.
摘要翻译：一种用于处理工件的等离子体反应器包括处理室，该处理室包括包括天花板并且具有大致垂直于所述天花板的对称垂直轴线的外壳，所述室内的工件支撑基座和大体上面对天花板，处理气体注入装置腔室和耦合到腔室的真空泵。反应器还包括覆盖天花板并包括径向内部施加器部分和径向外部施加器部分的等离子体源功率施加器，以及耦合到所述内部和外部施加器部分的RF电力设备，以及能够使工件支撑基座或外部施加器部分围绕垂直于所述对称轴线的径向轴线，并且能够围绕所述对称轴线旋转所述工件支撑基座。在优选实施例中，反应器还包括用于实现等离子体分布的轴对称调节的装置，其可以是（或两个）升降装置，用于沿所述垂直对称轴线相对于彼此改变所述内部和外部部分的位置，或用于分配施加到内部和外部施加器部分的RF功率电平的装置。

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