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    • 4. 发明授权
    • Microcap wafer-level package
    • 微型晶圆级封装
    • US06265246B1
    • 2001-07-24
    • US09359844
    • 1999-07-23
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • H01L2144
    • B81C1/00301B81B2207/07B81C1/00484H01L2224/48463H01L2924/01013H01L2924/01029H01L2924/01078H01L2924/01079H01L2924/10253H01L2924/14H01L2924/00014H01L2924/00
    • A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist, semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.
    • 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂,半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊垫冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接引线。
    • 8. 发明授权
    • Microcap wafer-level package
    • 微型晶圆级封装
    • US06376280B1
    • 2002-04-23
    • US09415284
    • 1999-10-08
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • Richard C. RubyTracy E. BellFrank S. GeefayYogesh M. Desai
    • H01L2144
    • B81C1/00301B81B2207/07B81C1/00484H01L2224/48463H01L2924/01013H01L2924/01029H01L2924/01078H01L2924/01079H01L2924/10253H01L2924/14H01L2924/00014H01L2924/00
    • A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.
    • 提供了一种微型晶片级封装,其中微型器件连接到基片上的焊盘。 基底晶片上的外围焊盘包围接合焊盘和微型器件。 盖晶片使用厚的光致抗蚀剂半导体光刻工艺在其上形成垫圈。 接合垫垫片与焊盘的周长相匹配,外围衬垫垫片与基底晶片上的外围焊盘相匹配。 孔位于接合垫垫片的周边内,并且形成在盖晶片中的预定深度。 然后将盖晶片放置在基底晶片上,以将焊盘冷却焊接到焊盘,并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。 然后将盖晶片减薄到预定深度以下,直到阱变成通孔,其提供对封装内的接合焊盘的访问,但是在气密密封的体积外部,用于从微器件利用系统连接导线。