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1. 发明授权

US06265246B1 Microcap wafer-level package 有权
标题翻译：微型晶圆级封装
公开(公告)号：US06265246B1
公开(公告)日：2001-07-24
申请号：US09359844
申请日：1999-07-23
申请人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
发明人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
IPC分类号： H01L2144
CPC分类号： B81C1/00301 , B81B2207/07 , B81C1/00484 , H01L2224/48463 , H01L2924/01013 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist, semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.
摘要翻译：提供了一种微型晶片级封装，其中微型器件连接到基片上的焊盘。基底晶片上的外围焊盘包围接合焊盘和微型器件。盖晶片使用厚的光致抗蚀剂，半导体光刻工艺在其上形成垫圈。接合垫垫片与焊盘的周长相匹配，外围衬垫垫片与基底晶片上的外围焊盘相匹配。孔位于接合垫垫片的周边内，并且形成在盖晶片中的预定深度。然后将盖晶片放置在基底晶片上，以将焊垫冷却焊接到焊盘，并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。然后将盖晶片减薄到预定深度以下，直到阱变成通孔，其提供对封装内的接合焊盘的访问，但是在气密密封的体积外部，用于从微器件利用系统连接引线。

2. 发明授权

US06429511B2 Microcap wafer-level package 有权
公开(公告)号：US06429511B2
公开(公告)日：2002-08-06
申请号：US09969432
申请日：2001-10-01
申请人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
发明人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
IPC分类号： H01L2348
CPC分类号： B81C1/00301 , B81B2207/095 , H01L2224/48463 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/00
摘要： A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.

3. 发明授权

US06376280B1 Microcap wafer-level package 失效
标题翻译：微型晶圆级封装
公开(公告)号：US06376280B1
公开(公告)日：2002-04-23
申请号：US09415284
申请日：1999-10-08
申请人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
发明人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
IPC分类号： H01L2144
CPC分类号： B81C1/00301 , B81B2207/07 , B81C1/00484 , H01L2224/48463 , H01L2924/01013 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer has gaskets formed thereon using a thick photoresist semiconductor photolithographic process. Bonding pad gaskets match the perimeters of the bonding pads and a peripheral pad gasket matches the peripheral pad on the base wafer. Wells are located inside the perimeters of the bond pad gaskets and are formed to a predetermined depth in the cap wafer. The cap wafer is then placed over the base wafer to cold weld bond the gaskets to the pads and form a hermetically sealed volume between the bonding pad gaskets and the peripheral pad gasket. The cap wafer is then thinned below the predetermined depth until the wells become through holes that provide access to the bonding pads inside the package, but outside the hermetically sealed volume, for connecting wires from a micro device utilizing system.
摘要翻译：提供了一种微型晶片级封装，其中微型器件连接到基片上的焊盘。基底晶片上的外围焊盘包围接合焊盘和微型器件。盖晶片使用厚的光致抗蚀剂半导体光刻工艺在其上形成垫圈。接合垫垫片与焊盘的周长相匹配，外围衬垫垫片与基底晶片上的外围焊盘相匹配。孔位于接合垫垫片的周边内，并且形成在盖晶片中的预定深度。然后将盖晶片放置在基底晶片上，以将焊盘冷却焊接到焊盘，并在焊盘垫片和外围焊盘垫圈之间形成气密密封的体积。然后将盖晶片减薄到预定深度以下，直到阱变成通孔，其提供对封装内的接合焊盘的访问，但是在气密密封的体积外部，用于从微器件利用系统连接导线。

4. 发明授权

US06228675B1 Microcap wafer-level package with vias 有权
标题翻译：微孔晶圆级封装带通孔
公开(公告)号：US06228675B1
公开(公告)日：2001-05-08
申请号：US09360859
申请日：1999-07-23
申请人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
发明人： Richard C. Ruby , Tracy E. Bell , Frank S. Geefay , Yogesh M. Desai
IPC分类号： H01L2144
CPC分类号： B81B7/007 , H01L23/04 , H01L23/055 , H01L23/10 , H01L23/481 , H01L24/05 , H01L24/48 , H01L2224/04042 , H01L2224/05083 , H01L2224/05093 , H01L2224/05096 , H01L2224/05109 , H01L2224/05138 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05599 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/0603 , H01L2224/48463 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30105 , H01L2224/45099 , H01L2924/00
摘要： A microcap wafer-level package is provided in which a micro device is connected to bonding pads on a base wafer. A peripheral pad on the base wafer encompasses the bonding pads and the micro device. A cap wafer is processed to form wells of a predetermined depth in the cap wafer. A conductive material is made integral with the walls of the wells in the cap wafer. The cap wafer has contacts and a peripheral gasket formed thereon where the contacts are capable of being aligned with the bonding pads on the base wafer, and the gasket matches the peripheral pad on the base wafer. The cap wafer is then placed over the base wafer so as to bond the contact and gasket to the pads and form a hermetically sealed volume within the peripheral gasket. The cap wafer is thinned to form a “microcap”. The microcap is thinned below the predetermined depth until the semiconductor dopant is exposed to become conductive vias through the cap wafer to outside the hermetically sealed volume.
摘要翻译：提供了一种微型晶片级封装，其中微型器件连接到基片上的焊盘。基底晶片上的外围焊盘包围接合焊盘和微型器件。处理盖晶片以在盖晶片中形成预定深度的阱。导电材料与盖晶片中的阱的壁成一体。封盖晶片具有形成在其上的触点和外围垫圈，其中触点能够与基底晶片上的接合焊盘对准，并且垫圈与基底晶片上的外围焊盘匹配。然后将盖晶片放置在基底晶片上，以将接触垫片和垫圈粘合到垫上，并在外围垫圈内形成气密密封的体积。盖晶片变薄以形成“微帽”。微帽在预定深度之下变薄，直到半导体掺杂剂暴露成通过盖晶片的导电通孔到密封体积外部。

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