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1. 发明授权

US08946867B2 Semiconductor component with optimized edge termination 有权
标题翻译：半导体元件具有优化的边缘终止
公开(公告)号：US08946867B2
公开(公告)日：2015-02-03
申请号：US14361376
申请日：2012-09-06
申请人： Reiner Barthelmess , Hans-Joachim Schulze , Uwe Kellner-Werdehausen , Josef Lutz , Thomas Basler
发明人： Reiner Barthelmess , Hans-Joachim Schulze , Uwe Kellner-Werdehausen , Josef Lutz , Thomas Basler
IPC分类号： H01L29/861 , H01L29/06 , H01L29/36
CPC分类号： H01L29/0657 , H01L29/0623 , H01L29/0661 , H01L29/36 , H01L29/861
摘要： A semiconductor component includes a two-sided semiconductor body, an inner zone with a basic doping of a first conduction type, and two semiconductor zones. The first zone, disposed between the first side and inner zone, is of the first conduction type with a doping concentration higher than that of the inner zone. The second zone, disposed between the second side and inner zone, is of a second conduction type complementary to the first type with a doping concentration higher than that of the inner zone. At least one first edge chamfer extends at a first angle to the extension plane of the transition from the second zone to the inner zone at least along the edge of the second zone and inner zone.At least one buried zone of the second conduction type is provided between the first zone and inner zone, and extends substantially parallel to the first zone.
摘要翻译：半导体部件包括双面半导体本体，具有第一导电类型的基本掺杂的内部区域和两个半导体区域。设置在第一侧面和内部区域之间的第一区域是具有比内部区域高的掺杂浓度的第一导电类型。设置在第二侧面和内部区域之间的第二区域具有与第一类型互补的第二导电类型，其掺杂浓度高于内部区域的掺杂浓度。至少一个第一边缘倒角至少沿着第二区域和内部区域的边缘以第一角度延伸到从第二区域到内部区域的过渡的延伸平面。第二导电类型的至少一个埋置区域设置在第一区域和内部区域之间，并且基本平行于第一区域延伸。

2. 发明申请

US20090140290A1 SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE 有权
标题翻译：包含短路结构的半导体元件
公开(公告)号：US20090140290A1
公开(公告)日：2009-06-04
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译：包括短路结构的半导体部件。一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。第一区域和第二区域耦合到高度导电的层。第二导电类型的连接区域布置在第二区域和导电层之间。

3. 发明授权

US08415710B2 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US08415710B2
公开(公告)日：2013-04-09
申请号：US13022386
申请日：2011-02-07
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
摘要翻译：配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

4. 发明申请

US20110127576A1 Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method 有权
标题翻译：包含P型发射极和P型发射极中更高掺杂区的双极功率半导体元件及生产方法
公开(公告)号：US20110127576A1
公开(公告)日：2011-06-02
申请号：US13022386
申请日：2011-02-07
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
摘要翻译：配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

5. 发明申请

US20070215981A1 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US20070215981A1
公开(公告)日：2007-09-20
申请号：US11651937
申请日：2007-01-10
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping. The invention furthermore relates to a method for producing a power semiconductor component.
摘要翻译：双极性功率半导体元件包括p型发射极和p型发射极中的更高掺杂区及其制造方法技术领域本发明涉及一种双极型功率半导体元件，其包括半导体本体（1），其中p掺杂发射极 8）中，在垂直方向（v）上依次布置n掺杂基极（7），p掺杂基极（6）和n掺杂主发射极（5）。 p掺杂发射极（8）具有多个具有局部增加的p型掺杂的高p掺杂区（82）。本发明还涉及一种用于制造功率半导体部件的方法。

6. 发明申请

US20070051972A1 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US20070051972A1
公开(公告)日：2007-03-08
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

7. 发明授权

US07687826B2 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US07687826B2
公开(公告)日：2010-03-30
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

8. 发明申请

US20080296774A1 ARRANGEMENT INCLUDING A SEMICONDUCTOR DEVICE AND A CONNECTING ELEMENT 有权
标题翻译：包括半导体器件和连接元件的布置
公开(公告)号：US20080296774A1
公开(公告)日：2008-12-04
申请号：US11756110
申请日：2007-05-31
申请人： Uwe Kellner-Werdehausen , Reiner Barthelmess , Hans-Joachim Schulze , Heinrich Gerstenkoeper , Ralf Joerke
发明人： Uwe Kellner-Werdehausen , Reiner Barthelmess , Hans-Joachim Schulze , Heinrich Gerstenkoeper , Ralf Joerke
IPC分类号： H01L23/52 , H01L21/60
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element.
摘要翻译：公开了一种集成电路和包括半导体器件和连接元件的布置及其制造方法。一个实施例提供了具有第一接触面和第二接触面的半导体元件。第一接触面和第二接触面在第一横向延伸。导电连接元件，其具有与半导体元件电接触的第三接触面。连接元件包括沟槽系统。该沟槽系统的第一沟槽从第三接触面延伸到连接元件。

9. 发明申请

US20050258448A1 Thyristor component with improved blocking capabilities in the reverse direction 审中-公开
标题翻译：晶闸管组件在相反方向具有改进的阻挡能力
公开(公告)号：US20050258448A1
公开(公告)日：2005-11-24
申请号：US11116919
申请日：2005-04-28
申请人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/10 , H01L29/74
CPC分类号： H01L29/74 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/102
摘要： A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.
摘要翻译：晶闸管包括具有正面和背面的半导体本体，边缘，在背面的区域中实施的第一半导体区域和与第一半导体区域相邻的第二半导体区域，由此边缘具有倾斜的实施例在第一和第二半导体区域之间的过渡区域，布置在半导体主体的前表面的区域中的至少一个第三半导体区域和至少一个第四半导体区域，布置在至少一个第三半导体区域和第二个半导体区。第四半导体区域在半导体本体的横向方向上的边缘之前终止，以便减少由第四半导体区域，第二半导体区域和第一半导体区域在边缘区域中形成的寄生双极晶体管的放大率。

10. 发明授权

US09269769B2 Semiconductor component including a short-circuit structure 有权
标题翻译：半导体元件包括短路结构
公开(公告)号：US09269769B2
公开(公告)日：2016-02-23
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/06 , H01L29/08 , H01L29/165 , H01L29/66 , H01L29/739 , H01L29/74
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译：包括短路结构的半导体部件。一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。第一区域和第二区域耦合到高度导电的层。第二导电类型的连接区域布置在第二区域和导电层之间。

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